949 resultados para Directly modulated semiconductor lasers


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Chaotic synchronization of two directly modulated semiconductor lasers with negative delayed optoelectronic feedback is investigated and this scheme is found to be useful for e±cient bidirectional communication between the lasers. A symmetric bidirec- tional coupling is identified as a suitable method for isochronal synchronization of such lasers. The optimum values of coupling and feedback strength that can provide maxi- mum quality of synchronization are identified. This method is successfully employed for encoding/decoding both analog and digital messages. The importance of a symmetric coupling is demonstrated by studying the variation of decoding efficiency with respect to asymmetric coupling.

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Isochronal synchronisation between the elements of an array of three mutually coupled directly modulated semiconductor lasers is utilized for the purpose of simultaneous bidirectional secure communication. Chaotic synchronisation is achieved by adding the coupling signal to the self feedback signal provided to each element of the array. A symmetric coupling is effective in inducing synchronisation between the elements of the array. This coupling scheme provides a direct link between every pair of elements thus making the method suitable for simultaneous bidirectional communication between them. Both analog and digital messages are successfully encrypted and decrypted simultaneously by each element of the array.

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The effect of coupling on two high frequency modulated semiconductor lasers is numerically studied. The phase diagrams and bifurcatio.n diagrams are drawn. As the coupling constant is increased the system goes from chaotic to periodic behavior through a reverse period doubling sequence. The Lyapunov exponent is calculated to characterize chaotic and periodic regions.

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Results of a numerical study of synchronisation of two directly modulated semiconductor lasers, using bi-directional coupling, are presented. The effect of stepwise increase in the coupling strength (C) on the synchronisation of the chaotic outputs of two such lasers is studied, with the help of parameter space plots, synchronisation error plots, phase diagrams and time series outputs. Numerical results indicate that as C increases, the system achieves synchronisation as well as stability together with an increase in the output power. The stability of the synchronised states is checked by applying a perturbation to the system after it becomes synchronised and then noting the time it takes to regain synchronisation. For lower values of C the system does not regain synchronisation. But, with higher values synchronisation is regained within a very short time.

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Chaos is a subject oftopical interest and, studied in great detail in relation to its relevance in almost all branches of science, which include physical, chemical, and biological fields. Chaos in the literal sense signifies utter confusion, but the scientific community has differentiated chaos as deterministic chaos and white noise. Deterministic chaos implies the complex behaviour of systems, which are governed by deterministic laws. Behaviour of such systems often become unpredictable in the long run. This unpredictability arises from the sensitivity of the system to its initial conditions. The essential requirement for ‘sensitivity to initial condition’ is nonlinearity of the system. The only method for determining the future of such systems is numerically simulating its final state from a set ofinitial conditions. Synchronisation

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The chaotic dynamics of directly modulated semiconductor lasers with delayed optoelectronic feedback is studied numerically. The effects of positive and negative delayed optoelectronic feedback in producing chaotic outputs from such lasers with nonlinear gain reduction in its optimum value range is investigated using bifurcation diagrams. The results are confirmed by calculating the Lyapunov exponents. A negative delayed optoelectronic feedback configuration is found to be more effective in inducing chaotic dynamics to such systems with nonlinear gain reduction factor in the practical value range.

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In this paper, we propose the dynamic P-V curve for modulator and P-I curve for laser diode, and present a simple approach to deriving the curves from the small-signal frequency responses measured using a microwave network analyzer. The linear response range, modulation efficiency, optimal driving conditions at different frequency can, therefore, be determined. It is demonstrated that the large-signal performance of electro-absorption (EA) modulator and the directly modulated semiconductor lasers can be predicted from the dynamic curved surface. Experiments show a good agreement between the evaluated characteristics and the measured large-signal performance.

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We show numerically that direct delayed optoelectronic feedback can suppress hysteresis and bistability in a directly modulated semiconductor laser. The simulation of a laser with feedback is performed for a considerable range of feedback strengths and delays and the corresponding values for the areas of the hysteresis loops are calculated. It is shown that the hysteresis loop completely vanishes for certain combinations of these parameters. The regimes for the disappearance of bistability are classified globally. Different dynamical states of the laser are characterized using bifurcation diagrams and time series plots.

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In this work, educational software for intuitive understanding of the basic dynamic processes of semiconductor lasers is presented. The proposed tool is addressed to the students of optical communication courses, encouraging self consolidation of the subjects learned in lectures. The semiconductor laser model is based on the well known rate equations for the carrier density, photon density and optical phase. The direct modulation of the laser is considered with input parameters which can be selected by the user. Different options for the waveform, amplitude and frequency of thpoint. Simulation results are plotted for carrier density and output power versus time. Instantaneous frequency variations of the laser output are numerically shifted to the audible frequency range and sent to the computer loudspeakers. This results in an intuitive description of the “chirp” phenomenon due to amplitude-phase coupling, typical of directly modulated semiconductor lasers. In this way, the student can actually listen to the time resolved spectral content of the laser output. By changing the laser parameters and/or the modulation parameters,consequent variation of the laser output can be appreciated in intuitive manner. The proposed educational tool has been previously implemented by the same authors with locally executable software. In the present manuscript, we extend our previous work to a web based platform, offering improved distribution and allowing its use to the wide audience of the web.

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Chaotic dynamics of directly modulated semiconductor lasers have been studied extensively over the last two decades because of their application in secure optical communication. However, chaos is generally suppressed in such systems when the nonlinear gain reduction factor is above 0.01 which is very much smaller than the reported values in semiconductors like InGaAsP. In this paper we show that by giving an optoelectronic feedback with appropriate delay one can increase the range of the values of the gain reduction factor for which chaos can be observed. Numerical studies show that negative feedback is more efficient in producing chaotic dynamics.

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Nonlinear dynamics has emerged into a prominent area of research in the past few Decades.Turbulence, Pattern formation,Multistability etc are some of the important areas of research in nonlinear dynamics apart from the study of chaos.Chaos refers to the complex evolution of a deterministic system, which is highly sensitive to initial conditions. The study of chaos theory started in the modern sense with the investigations of Edward Lorentz in mid 60's. Later developments in this subject provided systematic development of chaos theory as a science of deterministic but complex and unpredictable dynamical systems. This thesis deals with the effect of random fluctuations with its associated characteristic timescales on chaos and synchronization. Here we introduce the concept of noise, and two familiar types of noise are discussed. The classifications and representation of white and colored noise are introduced. Based on this we introduce the concept of randomness that we deal with as a variant of the familiar concept of noise. The dynamical systems introduced are the Rossler system, directly modulated semiconductor lasers and the Harmonic oscillator. The directly modulated semiconductor laser being not a much familiar dynamical system, we have included a detailed introduction to its relevance in Chaotic encryption based cryptography in communication. We show that the effect of a fluctuating parameter mismatch on synchronization is to destroy the synchronization. Further we show that the relation between synchronization error and timescales can be found empirically but there are also cases where this is not possible. Studies show that under the variation of the parameters, the system becomes chaotic, which appears to be the period doubling route to chaos.

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High-speed semiconductor lasers are an integral part in the implemen- tation of high-bit-rate optical communications systems. They are com- pact, rugged, reliable, long-lived, and relatively inexpensive sources of coherent light. Due to the very low attenuation window that exists in the silica based optical fiber at 1.55 μm and the zero dispersion point at 1.3 μm, they have become the mainstay of optical fiber com- munication systems. For the fabrication of lasers with gratings such as, distributed bragg reflector or distributed feedback lasers, etching is the most critical step. Etching defines the lateral dimmensions of the structure which determines the performance of optoelectronic devices. In this thesis studies and experiments were carried out about the exist- ing etching processes for InP and a novel dry etching process was de- veloped. The newly developed process was based on Cl2/CH4/H2/Ar chemistry and resulted in very smooth surfaces and vertical side walls. With this process the grating definition was significantly improved as compared to other technological developments in the respective field. A surface defined grating definition approach is used in this thesis work which does not require any re-growth steps and makes the whole fabrication process simpler and cost effective. Moreover, this grating fabrication process is fully compatible with nano-imprint lithography and can be used for high throughput low-cost manufacturing. With usual etching techniques reported before it is not possible to etch very deep because of aspect ratio dependent etching phenomenon where with increasing etch depth the etch rate slows down resulting in non-vertical side walls and footing effects. Although with our de- veloped process quite vertical side walls were achieved but footing was still a problem. To overcome the challenges related to grating defini- tion and deep etching, a completely new three step gas chopping dry etching process was developed. This was the very first time that a time multiplexed etching process for an InP based material system was demonstrated. The developed gas chopping process showed extra ordinary results including high mask selectivity of 15, moderate etch- ing rate, very vertical side walls and a record high aspect ratio of 41. Both the developed etching processes are completely compatible with nano imprint lithography and can be used for low-cost high-throughput fabrication. A large number of broad area laser, ridge waveguide laser, distributed feedback laser, distributed bragg reflector laser and coupled cavity in- jection grating lasers were fabricated using the developed one step etch- ing process. Very extensive characterization was done to optimize all the important design and fabrication parameters. The devices devel- oped have shown excellent performance with a very high side mode suppression ratio of more than 52 dB, an output power of 17 mW per facet, high efficiency of 0.15 W/A, stable operation over temperature and injected currents and a threshold current as low as 30 mA for almost 1 mm long device. A record high modulation bandwidth of 15 GHz with electron-photon resonance and open eye diagrams for 10 Gbps data transmission were also shown.