Experimental Observation Of Electrical Instability Of Droplets On Dielectric Layer

Polydimethylsiloxane ( PDMS) has become the most widely used silicon-based organic polymer in bio-MEMS/NEMS devices. However, the inherent hydrophobic nature of PDMS hinders its wide applications in bio-MEMS/NEMS for efficient transport of liquids. Electrowetting is a useful tool to reduce the apparent contact angle of partially wetting conductive liquids and has been utilized widely in bio-MEMS/NEMS. Our experimental results show that the thin PDMS membranes exhibit good properties in electrowetting-on-dielectric. The electrical instability phenomenon of droplets was observed in our experiment. The sessile droplet lying on the PDMS membrane will lose its stability with the touch of the wire electrode to make the apparent contact angle change suddenly larger than 35 degrees. Contact mode can protect the dielectric layer from electrical breakdown effectively. Electrical breakdown process of dielectric layer was recorded by a high speed camera. It is found experimentally that a PDMS membrane of 4.8 mu m thick will not be destroyed due to the electric breakdown even at 800 V in the contact mode.

Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes

An organic thin-film transistor (OTFT) having a low-dielectric polymer layer between gate insulator and source/drain electrodes is investigated. Copper phthalocyanine (CuPc), a well-known organic semiconductor, is used as an active layer to test performance of the device. Compared with bottom-contact devices, leakage current is reduced by roughly one order of magnitude, and on-state current is enhanced by almost one order of magnitude. The performance of the device is almost the same as that of a top-contact device. The low-dielectric polymer may play two roles to improve OTFT performance. One is that this structure influences electric-field distribution between source/drain electrodes and semiconductor and enhances charge injection. The other is that the polymer influences growth behavior of CuPc thin films and enhances physical connection between source/drain electrodes and semiconductor channel. Advantages of the OTFT having bottom-contact structure make it useful for integrated plastic electronic devices.

A new method for load matching in multimode microwave feating applicators based on the use of dielectric layer superposition

Usage of a dielectric multilayer around a dielectric Sample is studied as a means for improving the efficiency in multimode microwave- heating cavities. The results show that by using additional dielectric constant layers the appearance of undesired reflections at the sample-air interface is avoided and higher power -absorption rates within the sample and high -efficiency designs are obtained

Improving the hydrogen gas sensing performance of Pt/MoO3 nanoplatelets using a nano thick layer of La2O3

In this paper, we present how a thin RF sputtered layer of lanthanum oxide (La2O3) can alter electrical and improve hydrogen gas sensing characteristics of Pt/molybdenum oxide (MoO3) nanostructures Schottky diodes. We derived the barrier height, ideality factor and dielectric constant from the measured I–V characteristics at operating temperatures in the range of 25–300 ◦C. The dynamic response, response and recovery times were obtained upon exposure to hydrogen gas at different concentrations. Analysis of the results indicated a substantial improvement to the voltage shift sensitivity of the sensors incorporating the La2O3 layer. We associate this enhancement to the formation of numerous trap states due to the presence of the La2O3 thin film on the MoO3 nanoplatelets. These trap states increase the intensity of the dipolar charges at the metal–semiconductor interface, which induce greater bending of the energy bands. However, results also indicate that the presence of La2O3 trap states also increases response and recover times as electrons trapping and de-trapping processes occur before they can pass through this thin dielectric layer.

Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7Mg0.3O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2/V s. The capacitance-voltage (C−V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson’s plot. The use of Zn0.7Mg0.3O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

High performance sol-gel spin-coated titanium dioxide dielectric based MOS structures

High-kappa TiO2 thin films have been fabricated using cost effective sol-gel and spin-coating technique on p-Si (100) wafer. Plasma activation process was used for better adhesion between TiO2 films and Si. The influence of annealing temperature on the structure-electrical properties of titania films were investigated in detail. Both XRD and Raman studies indicate that the anatase phase crystallizes at 400 degrees C, retaining its structural integrity up to 1000 degrees C. The thickness of the deposited films did not vary significantly with the annealing temperature, although the refractive index and the RMS roughness enhanced considerably, accompanied by a decrease in porosity. For electrical measurements, the films were integrated in metal-oxide-semiconductor (MOS) structure. The electrical measurements evoke a temperature dependent dielectric constant with low leakage current density. The Capacitance-voltage (C-V) characteristics of the films annealed at 400 degrees C exhibited a high value of dielectric constant (similar to 34). Further, frequency dependent C-V measurements showed a huge dispersion in accumulation capacitance due to the presence of TiO2/Si interface states and dielectric polarization, was found to follow power law dependence on frequency (with exponent `s'=0.85). A low leakage current density of 3.6 x 10(-7) A/cm(2) at 1 V was observed for the films annealed at 600 degrees C. The results of structure-electrical properties suggest that the deposition of titania by wet chemical method is more attractive and cost-effective for production of high-kappa materials compared to other advanced deposition techniques such as sputtering, MBE, MOCVD and AID. The results also suggest that the high value of dielectric constant kappa obtained at low processing temperature expands its scope as a potential dielectric layer in MOS device technology. (C) 2015 Elsevier Ltd. All rights reserved.

Low-voltage driven ZnS:Mn MIS and MISIM thin film electroluminescent devices with Eu2O3 insulator layer

AC thin film electroluminescent devices of MIS and MISIM have been fabricated with a novel dielectric layer of Eu2O3 as an insulator. The threshold voltage for light emission is found to depend strongly on the frequency of excitation source in these devices. These devices are fabricated with an active layer of ZnS:Mn and a novel dielectric layer of Eu2O3 as an insulator. The observed frequency dependence of brightness-voltage characteristics has been explained on the basis of the loss characteristic of the insulator layer. Changes in the threshold voltage and brightness with variation in emitting or insulating film thickness have been investigated in metal-insulator-semiconductor (MIS) structures. It has been found that the decrease in brightness occurring with decreasing ZnS layer thickness can be compensated by an increase in brightness obtained by reducing the insulator thickness. The optimal condition for low threshold voltage and higher stability has been shown to occur when the active layer to insulator thickness ratio lies between one and two.

The role of an insulating surface layer on the relaxation time of the ionic redistribution in an electrolytic cell

We analyze the influence of a surface dielectric layer on the transient phenomena related to the ionic redistribution in an electrolytic cell submitted to a step-like external voltage. The adsorption-desorption phenomenon is taken into account in the famework of the Gouy-Chapman approximation, where the ions are assumed dimensionless. In the limit of small amplitude of the applied voltage, where the equations of the problem can be linearized, we obtain an analytical solution for the surface densities of ions, for the electrical potential and for the relaxation time for the transient phenomena. In the general case, when the linearized analysis is no longer valid, the solution of the problem is obtained numerically. The role of the thickness of the dielectric layer on the relaxation time is also discussed.

Surface impedance for scattered field on a dielectric-coated circular cylinder

In the scattering analysis of a circular cylindrical structure, the impedance boundary condition (IBC) can approximate and simplify the perfect electric conductor (PEC) boundary condition. The circular cylinder problem can be solved with modal methods but they require a large number of terms when the cylinder radius is large in terms of the wave length. The uniform theory of diffraction (UTD) [1] is commonly used to overcome this issue. The two-dimensional problem of scattering on a circular cylinder covered by a dielectric layer has been analyzed by [2]–[5], but their solutions either do not consider oblique incidence, fail on the transition region or use a constant surface impedance.

Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.

Interaction of time-varying airy pulses with a layer

Pulses with an envelope in the form of the Airy function are obtained using Green's functions in 1D and 2D in time domain. Interaction of such pulses with a dielectric layer is investigated and expressions for reflected and transmitted pulses are obtained. © 2012 EUROPEAN MICROWAVE ASSOC.

Reflection of a spatial-temporal airy pulse from a layer

The interaction of an Airy pulse with a dielectric layer is investigated theoretically. Approximate analytical expressions for reflected and transmitted waves are derived in the form of Taylor series. These series consist of shifted Airy pulses which are decelerated in time and space and deceleration becomes stronger with a number of a term of series. © 2012 IEEE.

Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric

Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd_(2)O_(3) dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 108 and a stable V_(t) is observed after storage at high temperature. The beneficial effects of Gd_(2)O_(3) on trapping effects of MOS-HEMTs are also dis-cussed.

Linear and nonlinear propagation of localised plasmon in metallic nanostructures

A major challenge in modern photonics and nano-optics is the diffraction limit of light which does not allow field localisation into regions with dimensions smaller than half the wavelength. Localisation of light into nanoscale regions (beyond its diffraction limit) has applications ranging from the design of optical sensors and measurement techniques with resolutions as high as a few nanometres, to the effective delivery of optical energy into targeted nanoscale regions such as quantum dots, nano-electronic and nano-optical devices. This field has become a major research direction over the last decade. The use of strongly localised surface plasmons in metallic nanostructures is one of the most promising approaches to overcome this problem. Therefore, the aim of this thesis is to investigate the linear and non-linear propagation of surface plasmons in metallic nanostructures. This thesis will focus on two main areas of plasmonic research –– plasmon nanofocusing and plasmon nanoguiding. Plasmon nanofocusing – The main aim of plasmon nanofocusing research is to focus plasmon energy into nanoscale regions using metallic nanostructures and at the same time achieve strong local field enhancement. Various structures for nanofocusing purposes have been proposed and analysed such as sharp metal wedges, tapered metal films on dielectric substrates, tapered metal rods, and dielectric V-grooves in metals. However, a number of important practical issues related to nanofocusing in these structures still remain unclear. Therefore, one of the main aims of this thesis is to address two of the most important of issues which are the coupling efficiency and heating effects of surface plasmons in metallic nanostructures. The method of analysis developed throughout this thesis is a general treatment that can be applied to a diversity of nanofocusing structures, with results shown here for the specific case of sharp metal wedges. Based on the geometrical optics approximation, it is demonstrated that the coupling efficiency from plasmons generated with a metal grating into the nanofocused symmetric or quasi-symmetric modes may vary between ~50% to ~100% depending on the structural parameters. Optimal conditions for nanofocusing with the view to minimise coupling and dissipative losses are also determined and discussed. It is shown that the temperature near the tip of a metal wedge heated by nanosecond plasmonic pulses can increase by several hundred degrees Celsius. This temperature increase is expected to lead to nonlinear effects, self-influence of the focused plasmon, and ultimately self-destruction of the metal tip. This thesis also investigates a different type of nanofocusing structure which consists of a tapered high-index dielectric layer resting on a metal surface. It is shown that the nanofocusing mechanism that occurs in this structure is somewhat different from other structures that have been considered thus far. For example, the surface plasmon experiences significant backreflection and mode transformation at a cut-off thickness. In addition, the reflected plasmon shows negative refraction properties that have not been observed in other nanofocusing structures considered to date. Plasmon nanoguiding – Guiding surface plasmons using metallic nanostructures is important for the development of highly integrated optical components and circuits which are expected to have a superior performance compared to their electronicbased counterparts. A number of different plasmonic waveguides have been considered over the last decade including the recently considered gap and trench plasmon waveguides. The gap and trench plasmon waveguides have proven to be difficult to fabricate. Therefore, this thesis will propose and analyse four different modified gap and trench plasmon waveguides that are expected to be easier to fabricate, and at the same time acquire improved propagation characteristics of the guided mode. In particular, it is demonstrated that the guided modes are significantly screened by the extended metal at the bottom of the structure. This is important for the design of highly integrated optics as it provides the opportunity to place two waveguides close together without significant cross-talk. This thesis also investigates the use of plasmonic nanowires to construct a Fabry-Pérot resonator/interferometer. It is shown that the resonance effect can be achieved with the appropriate resonator length and gap width. Typical quality factors of the Fabry- Pérot cavity are determined and explained in terms of radiative and dissipative losses. The possibility of using a nanowire resonator for the design of plasmonic filters with close to ~100% transmission is also demonstrated. It is expected that the results obtained in this thesis will play a vital role in the development of high resolution near field microscopy and spectroscopy, new measurement techniques and devices for single molecule detection, highly integrated optical devices, and nanobiotechnology devices for diagnostics of living cells.

A low cost approach for the fabrication of microwave phase shifter on laminates

This paper presents a simple and low cost fabrication approach using extended printed circuit board processing techniques for an electrostatically actuated phase shifter on a common microwave laminate. This approach uses 15 mu m thin copper foils for realizing the bridge structures as well as for a spacer. A polymeric thin film deposited by spin coating and patterned using lithographic process is used as a dielectric layer to improve the reliability of the device. The prototype of the phase shifter for X-band operation is fabricated and tested for electrical and electromechanical performance parameters. The realized devices have a figure of merit of 70 degrees/dB for a maximum applied bias potential of 85 V. Since these phase shifters can be conveniently fabricated directly on microwave substrates used for feed distribution networks of phased arrays, the overall addition in cost, dimensions and processing for including these phase shifters in these arrays is minimal.