Optical demultiplexer device operating in the visible spectrum

In this paper, we present results on the use of multilayered a-SiC:H heterostructures as a device for wavelength-division demultiplexing of optical signals. These devices are useful in optical communications applications that use the wavelength division multiplexing technique to encode multiple signals into the same transmission medium. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photo generated carriers. Band gap engineering was used to adjust the photogeneration and recombination rate profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. A demux algorithm based on the voltage controlled sensitivity of the device was proposed and tested. An electrical model of the WDM device is presented and supported by the solution of the respective circuit equations.

Semiconductor Device as Optical Demultiplexer for Short Range Optical Communications

In this paper we present results on the use of a multilayered a-SiC:H heterostructure as a wavelength-division demultiplexing device for the visible light spectrum. The proposed device is composed of two stacked p-i-n photodiodes with intrinsic absorber regions adjusted to short and long wavelength absorption and carrier collection. An optoelectronic characterisation of the device was performed in the visible spectrum. Demonstration of the device functionality for WDM applications was done with three different input channels covering the long, the medium and the short wavelengths in the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. An electrical model of the WDM device is proposed and supported by the solution of the respective circuit equations. Short range optical communications constitute the major application field, however other applications are also foreseen.

Optical demultiplexer based on an a-SiC:H voltage controlled device

In this paper we present results on the use of a semiconductor heterostructure based on a-SiC:H as a wavelength-division demultiplexer for the visible light spectrum. The proposed device is composed of two stacked p-i-n photodiodes with intrinsic absorber regions adjusted to short and long wavelength absorption and carrier collection. An optoelectronic characterisation of the device was performed in the visible spectrum. Demonstration of the device functionality for WDM applications was done with three different input channels covering the long, the medium and the short wavelengths in the visible range. The recovery of the input channels is explained using the photocurrent spectral dependence on the applied voltage. An electrical model of the WDM device is proposed and supported by the solution of the respective circuit equations. Short range optical communications constitute the major application field however other applications are foreseen. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Chirped fibre Bragg grating based multiplexer and demultiplexer for DWDM applications

A multiplexer/demultiplexer for 100 GHz channel spacing based on chirped fibre Bragg gratings with different bandwidths and optical circulators is presented. The spectral characteristics, specifications and operation of these passive devices are described, showing its potential use in dense wavelength division multiplexing (DWDM) applications. © 2004 Elsevier Ltd. All rights reserved.

Chirped fibre Bragg grating based multiplexer and demultiplexer for DWDM applications

A multiplexer/demultiplexer for 100 GHz channel spacing based on chirped fibre Bragg gratings with different bandwidths and optical circulators is presented. The spectral characteristics, specifications and operation of these passive devices are described, showing its potential use in DWDM applications.

Photonics Active Filters Based on SiC Multi layer Structures: A Two Stage Active Circuit

Characteristics of tunable wavelength filters based on a-SiC:H multi-layered stacked cells are studied both theoretically and experimentally. Results show that the light-activated photonic device combines the demultiplexing operation with the simultaneous photodetection and self amplification of an optical signal. The sensor is a bias wavelength current-controlled device that make use of changes in the wavelength of the background to control the power delivered to the load, acting a photonic active filter. Its gain depends on the background wavelength that controls the electrical field profile across the device.

Optical Transducers Based on Amorphous Si/SiC Photodiodes

Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been widely studied. In this paper single and stacked a-SiC:H p-i-n devices, in different geometries and configurations, are reviewed. Several readout techniques, depending on the desired applications (image sensor, color sensor, wavelength division multiplexer/demultiplexer device) are proposed. Physical models are presented and supported by electrical and numerical simulations of the output characteristics of the sensors.

Capacitive effects in pinpin photodiodes

The application of a-SiC:H/a-Si:H pinpin photodiodes for optoelectronic applications as a WDM demultiplexer device has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. This is required in short range optical communication applications, where for costs reasons the link is provided by Plastic Optical Fibers. Characterization of these devices has shown the presence of large photocapacitive effects. By superimposing background illumination to the pulsed channel the device behaves as a filter, producing signal attenuation, or as an amplifier, producing signal gain, depending on the channel/background wavelength combination. We present here results, obtained by numerical simulations, about the internal electric configuration of a-SiC:H/a-Si:H pinpin photodiode. These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photo-capacitance due to the accumulation of space charge localized at the bottom diode that, according to the Shockley-Read-Hall model, it is mainly due to defect trapping. Experimental result about measurement of the photodiode capacitance under different conditions of illumination and applied bias will be also presented. The combination of these analyses permits the description of a wavelength controlled photo-capacitance that combined with the series and parallel resistance of the diodes may result in the explicit definition of cut off frequencies for frequency capacitive filters activated by the light background or an oscillatory resonance of photogenerated carriers between the two diodes. (C) 2013 Elsevier B.V. All rights reserved.

Light-activated amplification in SiC Tandem devices: A capacitive active filter model

Characteristics of tunable wavelength pi'n/pin filters based on a-SiC:H multilayered stacked cells are studied both experimentally and theoretically. Results show that the device combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. An algorithm to decode the multiplex signal is established. A capacitive active band-pass filter model is presented and supported by an electrical simulation of the state variable filter circuit. Experimental and simulated results show that the device acts as a state variable filter. It combines the properties of active high-pass and low-pass filter sections into a capacitive active band-pass filter using a changing capacitance to control the power delivered to the load.

Three transducers for one photodetector: essays for optical communications

Dissertation presented to obtain the PhD degree in Electrical and Computer Engineering - Electronics

Analysis of signal impairment and crosstalk penalty induced by different types of optical filters in 100 Gbps PM-DQPSK based systems

Optical filters are crucial elements in optical communication networks. Their influence toward the optical signal will affect the communication quality seriously. In this paper we will study and simulate the optical signal impairment and crosstalk penalty caused by different kinds of filters, which include Butterworth, Bessel, Fiber Bragg Grating (FBG) and Fabry-Perot (F-P). Signal impairment from filter concatenation effect and crosstalk penalty from out-band and in-band are analyzed from Q-penalty, eye opening penalty (EOP) and optical spectrum. The simulation results show that signal impairment and crosstalk penalty induced by the Butterworth filter is the minimum among these four types of filters. Signal impairment caused by filter concatenation effect shows that when center frequency of all filters is aligned perfectly with the laser's frequency, 12 50-GHz Butterworth filters can be cascaded, with 1-dB EOP. This value is reduced to 9 when the center frequency is misaligned with 5 GHz. In the 50-GHz channel spacing DWDM networks, total Q-penalty induced by a pair of Butterworth filters based demultiplexer and multiplexer is lower than 0.5 dB when the filter bandwidth is in the range of 42-46 GHz.

Writing and characterisation methods for UV-photosensitivity based devices and their applications

The underlying work to this thesis focused on the exploitation and investigation of photosensitivity mechanisms in optical fibres and planar waveguides for the fabrication of advanced integrated optical devices for telecoms and sensing applications. One major scope is the improvement of grating fabrication specifications by introducing new writing techniques and the use of advanced characterisation methods for grating testing. For the first time the polarisation control method for advanced grating fabrication has successfully been converted to apodised planar waveguide fabrication and the development of a holographic method for the inscription of chirped gratings at arbitrary wavelength is presented. The latter resulted in the fabrication of gratings for pulse-width suppression and wavelength selection in diode lasers. In co-operation with research partners a number of samples were tested using optical frequency domain and optical low coherence reflectometry for a better insight into the limitations of grating writing techniques. Using a variety of different fabrication methods, custom apodised and chirped fibre Bragg gratings were written for the use as filter elements for multiplexer-demultiplexer devices, as well as for short pulse generation and wavelength selection in telecommunication transmission systems. Long period grating based devices in standard, speciality and tapered fibres are presented, showing great potential for multi-parameter sensing. One particular scope is the development of vectorial curvature and refractive index sensors with potential for medical, chemical and biological sensing. In addition the design of an optically tunable Mach-Zehnder based multiwavelength filter is introduced. The discovery of a Type IA grating type through overexposure of hydrogen loaded standard and Boron-Germanium co-doped fibres strengthened the assumption of UV-photosensitivity being a highly non-linear process. Gratings of this type show a significantly lower thermal sensitivity compared to standard gratings, which makes them useful for sensing applications. An Oxford Lasers copper-vapour laser operating at 255 nm in pulsed mode was used for their inscription, in contrast to previous work using CW-Argon-Ion lasers and contributing to differences in the processes of the photorefractive index change

Serial OTDM for 100 Gbit-Ethernet applications

A novel transmitter for 100 Gbit-Ethernet applications is proposed, based on the serial cascade of two 50 Gbit/s inverse-return-to-zero (also known as dark soliton) transmitters based on Mach-Zehnder modulators. The proposed transmitter and demultiplexer system uses commercially available components optimised for 40 Gbit/s applications. A 2.9 dB penalty at 100 Gbit/s is obtained using a single-stage OTDM demultiplexer and a preamplified receiver.

Five channel WDM communication using a single a:SiC-H double pin photo device

Amorphous SiC heterostructures built as a double pin device has a non linear spectral gain which is a function of the signal wavelength that impinges on its front or back surface. Illuminating the device with several single wavelength data channels in the visible spectrum allows for Wavelength Division Multiplexing (WDM) digital communication. Using fixed ultra-violet illumination at the front or back surfaces enables the recovery of the multiplexed channels. Five channels, each using a single wavelength which is modulated by a Manchester coded signal at 12,000 bps, form a frame with 1024 bits with a preamble for signal intensity and synchronisation purposes. Results show that the clustering of the received signal enables the successful recovery of the five channel data using the front and back illumination of the surfaces of the double pin photo device. (C) 2015 Elsevier B.V. All rights reserved.