Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport

We present a microscopic analysis of shot-noise suppression due to long-range Coulomb interaction in semiconductor devices under ballistic transport conditions. An ensemble Monte Carlo simulator self-consistently coupled with a Poisson solver is used for the calculations. A wide range of injection-rate densities leading to different degrees of suppression is investigated. A sharp tendency of noise suppression at increasing injection densities is found to scale with a dimensionless Debye length related to the importance of space-charge effects in the structure.

Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors

Shot-noise suppression is investigated in nondegenerate diffusive conductors by means of an ensemble Monte Carlo simulator. The universal 1/3 suppression value is obtained when transport occurs under elastic collision regime provided the following conditions are satisfied: (i) The applied voltage is much larger than the thermal value; (ii) the length of the device is much greater than both the elastic mean free path and the Debye length. By fully suppressing carrier-number fluctuations, long-range Coulomb interaction is essential to obtain the 1/3 value in the low-frequency limit.

Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport

We present a microscopic analysis of shot-noise suppression due to long-range Coulomb interaction in semiconductor devices under ballistic transport conditions. An ensemble Monte Carlo simulator self-consistently coupled with a Poisson solver is used for the calculations. A wide range of injection-rate densities leading to different degrees of suppression is investigated. A sharp tendency of noise suppression at increasing injection densities is found to scale with a dimensionless Debye length related to the importance of space-charge effects in the structure.

Application of abrupt cut-off models in the analysis of the capacitance spectra of conjugated polymer devices

In this paper, a detailed study of the capacitance spectra obtained from Au/doped-polyaniline/Al structures in the frequency domain (0.05 Hz-10 MHz), and at different temperatures (150-340 K) is carried out. The capacitance spectra behavior in semiconductors can be appropriately described by using abrupt cut-off models, since they assume that the electronic gap states that can follow the ac modulation have response times varying rapidly with a certain abscissa, which is dependent on both temperature and frequency. Two models based on the abrupt cut-off concept, formerly developed to describe inorganic semiconductor devices, have been used to analyze the capacitance spectra of devices based on doped polyaniline (PANI), which is a well-known polymeric semiconductor with innumerous potential technological applications. The application of these models allowed the determination of significant parameters, such as Debye length (approximate to 20 nm), position of bulk Fermi level (approximate to 320 meV) and associated density of states (approximate to 2x10(18) eV(-1) cm(-3)), width of the space charge region (approximate to 70 nm), built-in potential (approximate to 780 meV), and the gap states` distribution.

Application of abrupt cut-off models in the analysis of the capacitance spectra of conjugated polymer devices

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photorefractive two-wave mixing phase coupling measurement in a self-stabilized recording regime

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Phenomenological Interpretation of Impedance/Capacitance Measurements on Organic Electronic Devices Under Illumination

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Adsorption of pH-responsive polyelectrolyte chains onto spherical macroions

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

In situ real-time investigation of Organic Ultra-Thin-Film transistors: growth, electrical properties and biosensing applications

Organic electronics has grown enormously during the last decades driven by the encouraging results and the potentiality of these materials for allowing innovative applications, such as flexible-large-area displays, low-cost printable circuits, plastic solar cells and lab-on-a-chip devices. Moreover, their possible field of applications reaches from medicine, biotechnology, process control and environmental monitoring to defense and security requirements. However, a large number of questions regarding the mechanism of device operation remain unanswered. Along the most significant is the charge carrier transport in organic semiconductors, which is not yet well understood. Other example is the correlation between the morphology and the electrical response. Even if it is recognized that growth mode plays a crucial role into the performance of devices, it has not been exhaustively investigated. The main goal of this thesis was the finding of a correlation between growth modes, electrical properties and morphology in organic thin-film transistors (OTFTs). In order to study the thickness dependence of electrical performance in organic ultra-thin-film transistors, we have designed and developed a home-built experimental setup for performing real-time electrical monitoring and post-growth in situ electrical characterization techniques. We have grown pentacene TFTs under high vacuum conditions, varying systematically the deposition rate at a fixed room temperature. The drain source current IDS and the gate source current IGS were monitored in real-time; while a complete post-growth in situ electrical characterization was carried out. At the end, an ex situ morphological investigation was performed by using the atomic force microscope (AFM). In this work, we present the correlation for pentacene TFTs between growth conditions, Debye length and morphology (through the correlation length parameter). We have demonstrated that there is a layered charge carriers distribution, which is strongly dependent of the growth mode (i.e. rate deposition for a fixed temperature), leading to a variation of the conduction channel from 2 to 7 monolayers (MLs). We conciliate earlier reported results that were apparently contradictory. Our results made evident the necessity of reconsidering the concept of Debye length in a layered low-dimensional device. Additionally, we introduce by the first time a breakthrough technique. This technique makes evident the percolation of the first MLs on pentacene TFTs by monitoring the IGS in real-time, correlating morphological phenomena with the device electrical response. The present thesis is organized in the following five chapters. Chapter 1 makes an introduction to the organic electronics, illustrating the operation principle of TFTs. Chapter 2 presents the organic growth from theoretical and experimental points of view. The second part of this chapter presents the electrical characterization of OTFTs and the typical performance of pentacene devices is shown. In addition, we introduce a correcting technique for the reconstruction of measurements hampered by leakage current. In chapter 3, we describe in details the design and operation of our innovative home-built experimental setup for performing real-time and in situ electrical measurements. Some preliminary results and the breakthrough technique for correlating morphological and electrical changes are presented. Chapter 4 meets the most important results obtained in real-time and in situ conditions, which correlate growth conditions, electrical properties and morphology of pentacene TFTs. In chapter 5 we describe applicative experiments where the electrical performance of pentacene TFTs has been investigated in ambient conditions, in contact to water or aqueous solutions and, finally, in the detection of DNA concentration as label-free sensor, within the biosensing framework.

Rheology and Fourier-transform rheology on water-based systems

The influence of shear fields on water-based systems was investigated within this thesis. The non-linear rheological behaviour of spherical and rod-like particles was examined with Fourier-Transform rheology under LAOS conditions. As a model system for spherical particles two different kinds of polystyrene dispersions, with a solid content higher than 0.3 each, were synthesised within this work. Due to the differences in polydispersity and Debye-length, differences were also found in the rheology. In the FT-rheology both kinds of dispersions showed a similar rise in the intensities of the magnitudes of the odd higher harmonics, which were predicted by a model. The in some cases additionally appearing second harmonics were not predicted. A novel method to analyse the time domain signal was developed, that splits the time domain signal up in four characteristic functions. Those characteristic functions correspond to rheological phenomena. In some cases the intensities of the Fourier components can interfere negatively. FD-virus particles were used as a rod-like model system, which already shows a highly non-linear behaviour at concentrations below 1. % wt. Predictions for the dependence of the higher harmonics from the strain amplitude described the non-linear behaviour well at large, but no so good at small strain amplitudes. Additionally the trends of the rheological behaviour could be described by a theory for rod-like particles. An existing rheo-optical set-up was enhanced by reducing the background birefringence by a factor of 20 and by increasing the time resolution by a factor of 24. Additionally a combination of FT-rheology and rheo-optics was achieved. The influence of a constant shear field on the crystallisation process of zinc oxide in the presence of a polymer was examined. The crystallites showed a reduction in length by a factor of 2. The directed addition of polymers in combination with a defined shear field can be an easy way for a defined change of the form of crystallites.

Existence of solutions and asymtptotic limits of the Euler-Poisson and the quantum drift-diffusion systems

My work concerns two different systems of equations used in the mathematical modeling of semiconductors and plasmas: the Euler-Poisson system and the quantum drift-diffusion system. The first is given by the Euler equations for the conservation of mass and momentum, with a Poisson equation for the electrostatic potential. The second one takes into account the physical effects due to the smallness of the devices (quantum effects). It is a simple extension of the classical drift-diffusion model which consists of two continuity equations for the charge densities, with a Poisson equation for the electrostatic potential. Using an asymptotic expansion method, we study (in the steady-state case for a potential flow) the limit to zero of the three physical parameters which arise in the Euler-Poisson system: the electron mass, the relaxation time and the Debye length. For each limit, we prove the existence and uniqueness of profiles to the asymptotic expansion and some error estimates. For a vanishing electron mass or a vanishing relaxation time, this method gives us a new approach in the convergence of the Euler-Poisson system to the incompressible Euler equations. For a vanishing Debye length (also called quasineutral limit), we obtain a new approach in the existence of solutions when boundary layers can appear (i.e. when no compatibility condition is assumed). Moreover, using an iterative method, and a finite volume scheme or a penalized mixed finite volume scheme, we numerically show the smallness condition on the electron mass needed in the existence of solutions to the system, condition which has already been shown in the literature. In the quantum drift-diffusion model for the transient bipolar case in one-space dimension, we show, by using a time discretization and energy estimates, the existence of solutions (for a general doping profile). We also prove rigorously the quasineutral limit (for a vanishing doping profile). Finally, using a new time discretization and an algorithmic construction of entropies, we prove some regularity properties for the solutions of the equation obtained in the quasineutral limit (for a vanishing pressure). This new regularity permits us to prove the positivity of solutions to this equation for at least times large enough.

New fully kinetic model for the study of electric potential, plasma, and dust above lunar landscapes

We have developed a new fully kinetic electrostatic simulation, HYBes, to study how the lunar landscape affects the electric potential and plasma distributions near the surface and the properties of lifted dust. The model embodies new techniques that can be used in various types of physical environments and situations. We demonstrate the applicability of the new model in a situation involving three charged particle species, which are solar wind electrons and protons, and lunar photoelectrons. Properties of dust are studied with test particle simulations by using the electric fields derived from the HYBes model. Simulations show the high importance of the plasma and the electric potential near the surface. For comparison, the electric potential gradients near the landscapes with feature sizes of the order of the Debye length are much larger than those near a flat surface at different solar zenith angles. Furthermore, dust test particle simulations indicate that the landscape relief influences the dust location over the surface. The study suggests that the local landscape has to be taken into account when the distributions of plasma and dust above lunar surface are studied. The HYBes model can be applied not only at the Moon but also on a wide range of airless planetary objects such as Mercury, other planetary moons, asteroids, and nonactive comets.

Theory of a probe in a strong magnetic field

An asymptotic analysis of the Langmuir-probe problem in a quiescent, fully ionized plasma in a strong magnetic field is performed, for electron cyclotron radius and Debye length much smaller than probe radius, and this not larger than either ion cyclotron radius or mean free path. It is found that the electric potential, which is not confined to a sheath, controls the diffusion far from the probe; inside the magnetic tube bounded by the probe cross section the potential overshoots to a large value before decaying to its value in the body of the plasma. The electron current is independent of the shape of the body along the field and increases with ion temperature; due to the overshoot in the potential, (1) the current at negative voltages does not vary exponentially, (2) its magnitude is strongly reduced by the field, and (3) the usual sharp knee at space potential, disappears. In the regions of the C-V diagram studied the ion current is negligible or unaffected by the field. Some numerical results are presented.The theory, which fails beyond certain positive voltage, fields useful results for weak fields, too.

Far wake structure in rarefied plasma flows past charged bodies

The asymptotic structure of the far-wake behind a charged body in a rarefied plasma flow is investigated under the assumption of small ion-to-electron temperature ratio and of flow speed hypersonic with respect to the ions but not with respect to the electrons. It is found that waves are excited even if the flow is subacoustic (flow velocity less than the ion-acoustic speed). For both superacoustic and subacoustic velocities a steep wave front develops separating the weakly perturbed, quasineutral plasma ahead, from the region behind where ion waves appear. Near the axis a trailing front develops;the region between this and the axis is quasineutral for superacoustic speeds. The decay laws in all of these regions, the self-similar structure of the fronts and the general character of the waves are determined.The damping of the waves and special flow detail for bodies large and small compared with the Debye length are discussed. A nonlinear analysis of the leading wave front in superacoustic flow is carried out. A hyperacoustic equivalence principle is presented.

Ion-temperature-sensitive effect in transient langmuir probe response

A theory is presented for a method, recently proposed by Hester and Sonin, of determining the ion temperature in a plasma by measuring the transient current to a cylindrical Langmuir probe after applying a potential Vp{ — eVpy>KTe) under conditions where collection is collision free and the ratio of probe radius to Debye length is small. The ion component of the current does not approach its final steady-state value monotonicalfy, but exhibits a strong, ion-temperature-dependent overshoot in the first few ion-plasma periods following the biasing of the probe. Analytical formulas are derived for the case of a Maxwellian plasma, and convenient graphical results are presented. The possible masking of the overshoot by a transient displacement current is discussed; it is shown how to avoid such displacement effects. For the overshoot to be sensitive to the ion temperature T the probe must be near plasma (zero) potential before applying V1,(eVp~<0.lKTe, VP~ being that initial potential); this is not a drawback of the method, but, on the contrary, it can be used to accurately determine plasma potential along with T.