Mesoporous dye-doped titanium dioxide for micro-optoelectronic applications

Optically transparent, mesostructured titanium dioxide thin films were fabricated using an amphiphilic poly(alkylene oxide) block copolymer template in combination with retarded hydrolysis of a titanium isopropoxide precursor. Prior to calcination, the films displayed a stable hexagonal mesophase and high refractive indices (1.5 to 1.6) relative to mesostructured silica (1.43). After calcination, the hexagonal mesophase was retained with surface areas >300 m2 g-1. The dye Rhodamine 6G (commonly used as a laser dye) was incorporated into the copolymer micelle during the templating process. In this way, novel dye-doped mesostructured titanium dioxide films were synthesised. The copolymer not only directs the film structure, but also provides a solubilizing environment suitable for sustaining a high monomer-to-aggregate ratio at elevated dye concentrations. The dye-doped films displayed optical thresholdlike behaviour characteristic of amplified spontaneous emission. Soft lithography was successfully applied to micropattern the dye-doped films. These results pave the way for the fabrication and demonstration of novel microlaser structures and other active optical structures. This new, high-refractive index, mesostructured, dye-doped material could also find applications in areas such as optical coatings, displays and integrated photonic devices.

V-substituted In2S3: an intermediate band material with photocatalytic activity in the whole visible light range

We proposed in our previous work V-substituted In2S3 as an intermediate band (IB) material able to enhance the efficiency of photovoltaic cells by combining two photons to achieve a higher energy electron excitation, much like natural photosynthesis. Here this hyper-doped material is tested in a photocatalytic reaction using wavelength-controlled light. The results evidence its ability to use photons with wavelengths of up to 750 nm, i.e. with energy significantly lower than the bandgap (=2.0 eV) of non-substituted In2S3, driving with them the photocatalytic reaction at rates comparable to those of non-substituted In2S3 in its photoactivity range (λ ≤ 650 nm). Photoluminescence spectra evidence that the same bandgap excitation as in V-free In2S3 occurs in V-substituted In2S3 upon illumination with photons in the same sub-bandgap energy range which is effective in photocatalysis, and its linear dependence on light intensity proves that this is not due to a nonlinear optical property. This evidences for the first time that a two-photon process can be active in photocatalysis in a single-phase material. Quantum calculations using GW-type many-body perturbation theory suggest that the new band introduced in the In2S3 gap by V insertion is located closer to the conduction band than to the valence band, so that hot carriers produced by the two-photon process would be of electron type; they also show that the absorption coefficients of both transitions involving the IB are of significant and similar magnitude. The results imply that V-substituted In2S3, besides being photocatalytically active in the whole visible light range (a property which could be used for the production of solar fuels), could make possible photovoltaic cells of improved efficiency.

Intrinsic magnetic properties of BixCo2-xMnO 4 spinels obtained by short-time etching

We report the structural and magnetic properties of Co2MnO 4, partially substituted by Bi at the octahedral site. Bismuth enhances ferromagnetism due to a decrease of the Co2+-Co2+ antiferromagnetic interactions and an increase of the Mn3+-Mn 4+ exchanges. Spurious phases (magnetic and/or nonmagnetic oxides) can easily form because of the large differences between the ionic radii of Bi3+ and Co3+, hiding or altering the intrinsic physical properties of the main BixCo2-xMnO4 phase. An easy way to eliminate the secondary phases is using acid reagents. Short-time etching of Bi0.1Co1.9MnO4 using nitric acid was successfully used, keeping most of the properties of the initial compound, with no alteration of the crystallographic structure. Final stoichiometry was respected (∼Bi0.08Co1.82MnO4), meaning that the material after etching definitely contains bismuth elements in its structure and the observed properties are intrinsic to the oxide spinel. Additional experiments were performed as a function of the synthesis conditions, showing that an optimal pH value of 7 allowed the best magnetic response of the non-doped material. © 2013 Elsevier B.V. All rights reserved.

Preparação e caracterização de filmes finos Sr1-xMexTiO3(Me=Fe, Ni)

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Protonenleitung in imidazolhaltigen Materialien als Modellsysteme für wasserfreie Brennstoffzellenmembranen

Es wird ein neues Konzept für ein protonenleitendes Polymer vorgestellt, das ohne eine zweite, flüssige Phase auskommt. Es beruht darauf, basische Gruppen (Imidazol) über flexible Spacer kovalent an ein Polymerrückgrat zu binden und durch Dotierung mit einer geringen Menge Säure Ladungsträger (Protonen) in dieses System einzubringen.Um die für die Leitfähigkeit und ihren Mechanismus verantwortlichen Größen zu identifizieren, wurde ein Satz von niedermolekularen Modellverbindungen definierter Struktur und hoher Reinheit synthetisiert und im reinen Zustand sowie nach Dotierung mit geringen Mengen Säure umfassend charakterisiert. Untersucht wurden die thermischen Eigenschaften, die Leitfähigkeit, die Diffusion der jeweiligen Modellverbindung sowie ggf. der zugesetzten Säure, das Protonierungsgleichgewicht und die dielektrischen Eigenschaften. Insbesondere wurden durch den Vergleich von Leitfähigkeits- und Diffusionsdaten unter Anwendung der Nernst-Einstein-Beziehung Rückschlüsse auf den Leitmechanismus gezogen.Es wurden Leitfähigkeiten von bis zu 6.5E-3 S/cm bei 120°C erreicht. Der Anteil der Strukturdiffusion (vergleichbar mit dem Grotthus-Mechanismus in Wasser) an der protonischen Leitfähigkeit betrug bis zu über 90%. Als entscheidende Faktoren für die Leitfähigkeit wurden die Glastemperatur und, mit geringerer Priorität, der Imidazolgehalt des Materials identifiziert. Die Temperaturabhängigkeit aller untersuchten Transportgrößen ließ sich durch die Vogel-Tamman-Fulcher-Gleichung exzellent beschreiben.Die vorgestellten Daten bilden die Grundlage für den Entwurf eines entsprechenden Polymers.

Materiais à base de Sr(Ti,Nb)O3 para sensores lambda

Os sensores lambda resistivos possuem as vantagens de simplicidade e menor custo relativamente à utilização generalizada de sensores potenciométricos de oxigénio. Nesse sentido, os titanatos de estrôncio têm sido alvo de diversos estudos. Para a produção de uma relação inequívoca entre a condutividade destes materiais e a pressão parcial de oxigénio é necessária a adição de um dopante dador que suprime a condução eletrónica do tipo-p na região de pressões parciais de oxigénio próximas de ar. Contudo, a adição de um dopante dador produz respostas lentas destes materiais quando densos a variações da pressão parcial de oxigénio. Além da preparação usual dos pós por reação do estado sólido, foram preparadas diversas composições por mecanossíntese. Tal relaciona-se com o fato exaustivamente reportado de as amostras destes materiais, especialmente quando dopados com dadores, apresentarem comportamentos dependentes das condições de processamento. Teve ainda o intuito de avaliar a viabilidade da sua preparação por este método, e consequentemente verificar se este método de preparação, que presumivelmente produzirá pós com composição mais homogénea e mais reativos, permite alterar/manipular a resposta obtida por amostras com eles produzidas. Foram preparados diversos filmes, tipologia muito usada na produção de sensores resistivos, e amostras porosas com diversas composições à base de titanato de estrôncio produzidos com variadas condições de processamento. Foram realizadas diversas caracterizações sobre estes espécimes numa tentativa de melhor compreender as propriedades destes materiais e a dependência destas com parâmetros microestruturais como o tamanho de grão e a porosidade. Foi verificado que os exemplares de titanato de estrôncio não dopado, quer em filmes quer em amostras porosas, apresentam um comportamento elétrico semelhante ao apresentado por amostras densas deste material. Apurou-se ainda, que as suas características apresentam uma variação ténue com a alteração das condições de processamento. Já espécimes de titanato de estrôncio dopados com dador revelam uma forte dependência das suas propriedades com as condições de processamento utilizadas, nomeadamente, a temperatura de sinterização e o tempo de permanência a essa temperatura. Para o fabrico de sensores resistivos de oxigénio poderá ser preferível o recurso a amostras porosas pelo facto de mais facilmente se manipularem as suas características microestruturais e devido à exclusão dos problemas associados à interação entre o substrato de alumina e o filme. As composições não dopadas são as indicadas para esta função se a gama de pressões de oxigénio a avaliar for relativamente pouco extensa sendo aconselhadas as composições dopadas com dador se for pretendida uma medição da pressão parcial de oxigénio em zonas mais extensas correspondentes à queima com deficiência ou excesso de oxigénio. Mesmo em amostras de elevada porosidade poderá ocorrer resposta transiente do material dopado com dador.

Electrolytes for ceramic oxide fuel cells

The main objective of this dissertation is the development and processing of novel ionic conducting ceramic materials for use as electrolytes in proton or oxide-ion conducting solid oxide fuel cells. The research aims to develop new processing routes and/or materials offering superior electrochemical behavior, based on nanometric ceramic oxide powders prepared by mechanochemical processes. Protonic ceramic fuel cells (PCFCs) require electrolyte materials with high proton conductivity at intermediate temperatures, 500-700ºC, such as reported for perovskite zirconate oxides containing alkaline earth metal cations. In the current work, BaZrO3 containing 15 mol% of Y (BZY) was chosen as the base material for further study. Despite offering high bulk proton conductivity the widespread application of this material is limited by its poor sinterability and grain growth. Thus, minor additions of oxides of zinc, phosphorous and boron were studied as possible sintering additives. The introduction of ZnO can produce substantially enhanced densification, compared to the un-doped material, lowering the sintering temperature from 1600ºC to 1300ºC. Thus, the current work discusses the best solid solution mechanism to accommodate this sintering additive. Maximum proton conductivity was shown to be obtained in materials where the Zn additive is intentionally adopted into the base perovskite composition. P2O5 additions were shown to be less effective as a sintering additive. The presence of P2O5 was shown to impair grain growth, despite improving densification of BZY for intermediate concentrations in the range 4 – 8 mol%. Interreaction of BZY with P was also shown to have a highly detrimental effect on its electrical transport properties, decreasing both bulk and grain boundary conductivities. The densification behavior of H3BO3 added BaZrO3 (BZO) shows boron to be a very effective sintering aid. Nonetheless, in the yttrium containing analogue, BaZr0.85Y0.15O3- (BZY) the densification behavior with boron additives was shown to be less successful, yielding impaired levels of densification compared to the plain BZY. This phenomenon was shown to be related to the undesirable formation of barium borate compositions of high melting temperatures. In the last section of the work, the emerging oxide-ion conducting materials, (Ba,Sr)GeO3 doped with K, were studied. Work assessed if these materials could be formed by mechanochemical process and the role of the ionic radius of the alkaline earth metal cation on the crystallographic structure, compositional homogeneity and ionic transport. An abrupt jump in oxide-ion conductivity was shown on increasing operation temperature in both the Sr and Ba analogues.

Al-doped ZnO ceramic sputtering targets based on nanocrystalline powders produced by emulsion detonation synthesis – deposition and application as a transparent conductive oxide material

Transparent conducting oxides (TCOs) have been largely used in the optoelectronic industry due to their singular combination of low electrical resistivity and high optical transmittance. They are usually deposited by magnetron sputtering systems being applied in several devices, specifically thin film solar cells (TFSCs). Sputtering targets are crucial components of the sputtering process, with many of the sputtered films properties dependent on the targets characteristics. The present thesis focuses on the development of high quality conductive Al-doped ZnO (AZO) ceramic sputtering targets based on nanostructured powders produced by emulsion detonation synthesis method (EDSM), and their application as a TCO. In this sense, the influence of several processing parameters was investigated from the targets raw-materials synthesis to the application of sputtered films in optoelectronic devices. The optimized manufactured AZO targets present a final density above 99 % with controlled grain size, an homogeneous microstructure with a well dispersed ZnAl2O4 spinel phase, and electrical resistivities of ~4 × 10-4 Ωcm independently on the Al-doping level among 0.5 and 2.0 wt. % Al2O3. Sintering conditions proved to have a great influence on the properties of the targets and their performance as a sputtering target. It was demonstrated that both deposition process and final properties of the films are related with the targets characteristics, which in turn depends on the initial powder properties. In parallel, the influence of several deposition parameters in the film´s properties sputtered from these targets was investigated. The sputtered AZO TCOs showed electrical properties at room temperature that are superior to simple oxides and comparable to a reference TCO – indium tin oxide (ITO), namely low electrical resistivity of 5.45 × 10-4 Ωcm, high carrier mobility (29.4 cm2V-1s-1), and high charge carrier concentration (3.97 × 1020 cm-3), and also average transmittance in the visible region > 80 %. These superior properties allowed their successful application in different optoelectronic devices.

WO3 and ZnO-doped SnO2 ceramics as insulating material

SnO2 ceramics doped with ZnO and WO3 were prepared by mixed oxide method. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4+ by Zn2+ and W6+. The addition of WO3 inhibits the grain growth due to the segregation of SnZnWO8 and ZnWO6 at the grain boundaries without strong influence on the densification process. The electrical characterization (log E x log J) shows that the ternary system SnO2-ZnO-WO3 exhibits a very high resistivity of around 10(14) Omega M. Independently of the WO3 concentration, the electrical conductivity of the Sn02-ZnO-WO3 system is always lower than that of the undoped tin dioxide. (C) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Nonlinear behavior of TiO2 center dot Ta2O5 center dot MnO2 material doped with BaO and Bi2O3

A study was made on the effect of the addition of BaO (0.025-0.05 mol%) and Bi2O3 (0.025-0.05 mol%) to the TiO2.Ta2O5.MnO2 material. The samples were characterized by X-ray diffraction, and current-voltage measurements were accomplished for determination of the nonlinear coefficient. An analysis was made to evaluate the microstructural characteristics of the materials. The most appropriate sintering conditions for the materials were analyzed with the purpose of obtaining the best nonlinear coefficient associated with the smallest breakdown electric field. After sintering at 1400 degreesC for 2 h, a low-voltage (30 V cm(-1)) varistor was obtained, which, however, presented a low nonlinear coefficient (6). It was found that the sintering conditions must be controlled in order to improve the electrical properties of these materials. (C) 2004 Elsevier B.V. All rights reserved.

Reassessment of the potential applications of Eu3+-doped Y2O3 photoluminescent material in ceramic powder form

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Cation size effects-modified phase and PTCR development in Er3+ and Ca2+ co-doped BaTiO3 ceramics during sintering

Development of the positive temperature coefficient of resistivity (PTCR) in Er3+ and Ca2+ co-doped ferroelectric BaTiO3 was studied in this work, with Er3+ being used to act as a donor doping. Irrespective of all the materials showing high densities after sintering at 1200 to 1300 ºC, these revealed insulator at the lowest sintering temperature, changing to semiconducting and PTCR-type materials only when the sintering temperature was further increased. Observations from X-ray diffraction help correlating this effect with phase development in this formulated (Ba,Ca,Er)TiO3 system, considering the formation of initially two separated major (Ba,Ca)TiO3- and minor (Ca,Er)TiO3-based compounds, as a consequence of cation size-induced stress energy effects. Thus, appearance and enhancement here of the semiconducting and PTCR responses towards higher sintering temperatures particularly involve the incorporation of Er3+ into the major phase, rendering finally possible the generation and "percolative-like" migration of electrons throughout the whole material.

Absence of ferromagnetic order in high quality bulk Co-doped ZnO samples

Bulk Zn(1-x)Co(x)O samples were synthesized via standard solid-state reaction route with different Co molar concentrations up to 21%. A detailed microstructural analysis was carried out to investigate alternative sources of ferromagnetism, such as secondary phases and nanocrystals embedded in the bulk material. Conjugating different techniques we confirmed the Zn replacement by Co ions in the wurtzite ZnO structure, which retains, however, a high crystalline quality. No segregated secondary phases neither Co-rich nanocrystals were detected. Superconducting quantum interference device magnetometry demonstrates a paramagnetic Curie-Weiss behavior with antiferromagnetic interactions. We discuss the observed room temperature paramagnetism of our samples considering the current models for the magnetic properties of diluted magnetic semiconductors. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3459885]