Microstructure, crystalline phase, and dielectric property analyses of TiO2 composition with ZrO2 addition

For microwave applications, including mobile and satellite communications, ceramic resonators should have a high dielectric constant, low dielectric losses, and high frequency stability. In this sense, TiO2-ZrO 2 ceramics have been investigated as a function of sintering behavior, phase composition, and microstructure. The ceramics were densified reaching a value of about 86% of theoretical density at 1400°C sintering temperature. The ceramics are prepared by mixing raw materials with the following TiO2-ZrO2 weight % ratio: 100 to 0, 90 to 10, and 80 to 20, respectively. The measured dielectric constants are between 79 and 88 values, while the quality factor due to dielectric losses are between 2820 and 5170. These results point out the influence of Ti/Zr ratio on controlling the dielectric properties. © (2010) Trans Tech Publications.

Dielectric properties of some MM′O4 and MTiM′O6 (M=Cr, Fe, Ga; M′=Nb, Ta, Sb) rutile-type oxides

We describe an investigation of the structure and dielectric properties of MM'O-4 and MTiM'O-6 rutile-type oxides for M = Cr, Fe, Ga and M' = Nb. Ta and Sb. All the oxides adopt a disordered rutile structure (P4(2)/mnm) at ambient temperature. A partial ordered trirutile-type structure is confirmed for FeTaO4 from the low temperature (17 K) neutron diffraction studies While both the MM'O-4 oxides (CrTaO4 and FeTaO4) investigated show a normal dielectric property MTiM'O-6 oxides for M = Fe, Cr and M' = Nb/Ta/Sb display a distinct relaxor/relaxor-like response. Significantly the corresponding gallium analogs, GaTiNbO6 and GaTiTaO6, do not show a relaxor response at T<500K (C) 2010 Elsevier Inc All rights reserved

Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

Alumina (Al2O3) thin films were sputter deposited over well-cleaned glass and Si < 100 > substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 degrees C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al2O3-Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance. AC conductivity and activation energy were determined and the results are discussed. (C) 2011 Elsevier B.V. All rights reserved.

Dielectric Impedance Studies of Poly(vinyl butyral)-Cenosphere Composite Films

In the current study, amino silane functionalized cenosphere particles was used as a reinforcing filler in poly(vinyl butyral) matrix and were made by melt blending. The changes observed in the dielectric performance of the composite films with varying weight percentage of cenosphere particle in the matrix were investigated. The dielectric property and impedance spectroscopy were evaluated as a function of applied frequency in the range of 50 Hz to 5 MHz. It is observed that, because of orientation polarization of the PVB polymer, the permittivity and impedance decrease, whereas conductivity increases. Tangent loss graph indicates that the property of the matrix is associated with geometrical fill factor and the lowest quality factor. Therefore, above 10 kHz, these composites can be considered as dielectric loss-less material. (C) 2013 Society of Plastics Engineers

Non-Ohmic and dielectric properties of a Ca2Cu2Ti4O12 polycrystalline system

An investigation was made into the non-Ohmic and dielectric properties of a Ca2Cu2Ti4O12 perovskite-type system. Compared to the traditional CaCu3Ti4O12-based composition, the imbalance between the Ca and Cu atoms caused the formation of a polycrystalline system presenting similar to 33.3 mol % of CaCu3Ti4O12 (traditional composition) and similar to 66.7 mol % of CaTiO3. As for non-Ohmic properties, the effect of this Ca and Cu atom imbalance was that a nonlinear electric behavior of similar to 1500 was obtained. This high nonlinear electrical behavior emerged in detriment to the ultrahigh dielectric property frequently reported. The high non-Ohmic property was explained by the existence of Schottky-type barriers, whose formation mechanism may be similar to that proposed for traditional metal oxide non-Ohmic devices, according to similarities discussed herein. (c) 2006 American Institute of Physics.

Effects of moisture content on structural and dielectric properties of cassava starch films

In this work, it was evaluated the effect of moisture content on the structural and dielectric properties of cassava starch films by means of Fourier Transform infrared spectroscopy (FTIR), impedancimetric, and gravimetric analysis. The film samples were equilibrated in hermetically sealed desiccators, containing different saturated salts in water in order to promote activity of water between 0.11 and 0.85. The position and amplitude of the peaks in the fingerprint region of the FTIR spectra were changed due to the modifications in the interactions between the polymeric chains and water molecules. These effects may be related to the formation of semi-crystalline regions in the film structure. The dielectric properties of the films were also strongly dependent on the moisture content, showing a non-linear and a linear region, which was attributed to the domain of bound and free water in the film, respectively. The gravimetric analyzes showed the typical sigmoidal behavior, attributed to the way the water interacts with the biopolymer. Finally, the flexibility of the films increased with water content increasing.

Designing atmospheric-pressure plasma sources for surface engineering of nanomaterials

Atmospheric-pressure plasma processing techniques emerge as efficient and convenient tools to engineer a variety of nanomaterials for advanced applications in nanoscience and nanotechnology. This work presents different methods, including using a quasi-sinusoidal high-voltage generator, a radio-frequency power supply, and a uni-polar pulse generator, to generate atmospheric-pressure plasmas in the jet or dielectric barrier discharge configurations. The applicability of the atmospheric-pressure plasma is exemplified by the surface modification of nanoparticles for polymeric nanocomposites. Dielectric measurements reveal that representative nanocomposites with plasma modified nanoparticles exhibit notably higher dielectric breakdown strength and a significantly extended lifetime.

Composition, structure and electrical properties of DC reactive magnetron sputtered Al2O3 thin films

Thin films of alumina (Al2O3) were deposited over Si < 1 0 0 > substrates at room temperature at an oxygen gas pressure of 0.03 Pa and sputtering power of 60 W using DC reactive magnetron sputtering. The composition of the as-deposited film was analyzed by X-ray photoelectron spectroscopy and the O/Al atomic ratio was found to be 1.72. The films were then annealed in vacuum to 350, 550 and 750 degrees C and X-ray diffraction results revealed that both as-deposited and post deposition annealed films were amorphous. The surface morphology and topography of the films was studied using scanning electron microscopy and atomic force microscopy, respectively. A progressive decrease in the root mean square (RMS) roughness of the films from 1.53 nm to 0.7 nm was observed with increase in the annealing temperature. Al-Al2O3-Al thin film capacitors were then fabricated on p-type Si < 1 0 0 > substrate to study the effect of temperature and frequency on the dielectric property of the films and the results are discussed.

Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si

In this paper, we report the fabrication of Si-based double-hetero-epitaxial silicon on insulator (SOI) structure Si/gamma-Al2O3/Si. Firstly, single crystalline gamma-Al2O3(100) insulator films were grown epitaxially on Si(100) using the sources of TMA (Al(CH3)(3)) and O-2 by very low-pressure chemical vapor deposition. Afterwards, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a chemical vapor deposition method similar to the silicon on sapphire epitaxial growth. The Si/gamma-Al2O3/Si SOL materials are characterized in detail by reflect high-energy electron diffraction, X-ray diffraction and Auger energy spectrum (AES) techniques. The insulator layer of gamma-Al2O3 has an excellent dielectric property. The leakage current is less than 1 x 10(-10) A/cm(2) when the electric field is below 1.3 MV/ cm. The Si film grown on gamma-Al2O3/Si epi-substrates was single crystalline. Meanwhile, the AES depth profile of the SOL structure shows that the composition of gamma-Al2O3 film is uniform, and the carbon contamination is not observed. Additionally, the gamma-Al2O3/Si epi-substrates are suitable candidates as a platform for a variety of active layers such as GaN, SiC and GeSi. It shows a bright future for microelectronic and optical electronics applications. (C) 2002 Elsevier Science B.V. All rights reserved.

Preparation and characterization of polyimide/Al2O3 hybrid films by sol-gel process

A sol-gel process has been developed to prepare polyimide (PI)/Al2O3 hybrid films with different contents of Al2O3 based on pyromellitic dianhydride (PMDA) and 4,4'-oxydianiline (ODA) as monomers. FESEM and TEM images indicated that Al2O3 particles are relatively well dispersed in the polyimide matrix after ultrasonic treatment of the sol from aluminum isopropoxide and thermal imidization of the gel film. The dimensional stability, thermal stability, mechanical properties of hybrid PI films were improved obviously by an addition of adequate Al2O3 content, whereas, dielectric property and the elongation at break decreased with the increase of Al2O3 content. Surprisingly, the corona-resistance property of hybrid film was improved greatly with increasing Al2O3 content within certain range as compared with pure PI film.

Biocompatibility Study Of Hydroxyapatite-Chitosan Composite For Medical Applications At Microwave Frequencies

Hydroxyapatite (HAp, Ca10(PO4)6(OH)2) bioceramic and chitosan (poly [( -1-4) D-glucosamine]) biopolymer show good biocompatibility in vivo. They have biological origin and show excellent interactions with microwave. Microwave study of HAp made using different drying techniques and their composites with chitosan in the ISM band is presented. Pastes are made using HAp and chitosan with different ratios of mixing. The dielectric properties of this composites match with that of human fat, collagen tissues. Some of the compositions exhibit dielectric property close to that of natural bone. This makes them more biocompatible and better substitutes for natural bone. Thus composite bioceramics can be considered as phantom model constituents for imaging purposes. Their dielectric properties prove that they are biocompatible.

Ferroelectric ceramic/polymer composite for measuring X-ray intensity in the ortovoltage range

Pyroelectric sensors work as a thermal transducer converting the non-quantified thermal flux into the output measurable quantity of electrical charge, voltage or current. Ferroelectric ceramics and ferroelectric polymers have been extensively used as thermal detectors. More recently the research in the field of pyroelectricity has been concentrated on discovering materials with higher figures of merit (FOM), which means better sensing materials. Composite materials obtained with ferroelectric ceramics embedded in polymer host have received great attention because of their formability, mechanical resistance and the possibility to change their dielectric property varying the volume fraction of ceramic particles. In this work composite films made of modified lead titanate (PZ34) and poly(ether-ether-ketone) (PEEK) were characterized and used as sensing element to measure X-ray intensity in the ortovoltage range (120 - 300 kVp). The sensor response varies from 2.70 V to 0.80 V in the energy fluency range of 6.30 to 37.20 W/m(2). Furthermore the absorbed energy was analyzed as a function of the ionizing energy. The results indicate that the PZ34/PEEK composite with 60/40 vol.% can be useful to monitor X-ray radiation therapy.

Barium titanate screen-printed thick films

Barium titanate (BT) thick films were prepared from mechanically activated powders based on BaCO(3) and TiO(2). After homogenization and milling in a high-energy vibro mill, the powders were calcined at 700 degreesC for 2 h by slow heating and cooling rates. A thick film paste was prepared by mixing BT fine powders with small amount of low temperature sintering aid and organic binder. The thick films were screen-printed on alumina substrates electroded with Ag-Pd. The BT films were sintered at 850 degreesC for 1 h. The thickness was 25-75 mum depending of number of layers. The microstructure of thick films and the compatibility between BT layers and substrate were investigated by SEM Results of dielectric property measurements are also reported. (C) 2002 Elsevier B.V. Ltd and Techna S.r.l. All rights reserved.

Structural and ferroelectric properties of Pb1-xSrxTiO3 thin films

Strontium-modified lead titanate (PST) thin films with composition Pb1-xSrxTiO3 (0.10 < x &LE; 0.60) were grown on Pt/Ti/SiO2/Si substrates using a soft chemical process. The crystallization of the PST thin films was achieved by heat treatment at 600&DEG;C. The structural and microstructural modifications in the films were studied using X-ray diffraction (XRD) and atomic force microscopy, respectively. The XRD study shows that the lattice parameters of polycrystalline PST thin films calculated from X-ray data indicate a decrease in lattice tetragonality with the increase in strontium content in these films. This indicates a gradual change from tetragonal to cubic structure. By atomic force microscopy analysis, the average grain size of the thin films was systematically reduced with the increase in Sr content. The dielectric property of the thin films was found to be strongly dependent on the Sr concentration. With 60 at.% Sr content, a ferroelectric to paraelectric phase transition was observed at room temperature.

Structure-property correlation in BaO-TiO2-B2O3 glasses: glass stability, optical, hydrophobic, and dielectric properties

Glasses in the x(BaO-TiO2)-B2O3 (x = 0.25, 0.5, 0.75, and 1 mol.) system were fabricated via the conventional melt-quenching technique. Thermal stability and glass-forming ability as determined by differential thermal analysis (DTA) were found to increase with increasing BaO-TiO2 (BT) content. However, there was no noticeable change in the glass transition temperature (T-g). This was attributed to the active participation of TiO2 in the network formation especially at higher BT contents via the conversion of the TiO6 structural units into TiO4 units, which increased the connectivity and resulted in an increase in crystallization temperature. Dielectric and optical properties at room temperature were studied for all the glasses under investigation. Interestingly, these glasses were found to be hydrophobic. The results obtained were correlated with different structural units and their connectivity in the glasses.