992 resultados para Crystallographic properties


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The m-plane GaN films grown on LiAlO2(100) by metal-organic chemical vapor deposition exhibit anisotropic crystallographic properties. The Williamson-Hall plots point out they are due to the different tilts and lateral correlation lengths of mosaic blocks parallel and perpendicular to GaN[0001] in the growth plane. The symmetric and asymmetric reciprocal space maps reveal the strain of m-plane GaN to be biaxial in-plane compress epsilon(xx)=-0.79% and epsilon(zz)=-0.14% with an out-of-plane dilatation epsilon(yy)=0.38%. This anisotropic strain further separates the energy levels of top valence band at Gamma point. The energy splitting as 37 meV as well as in-plane polarization anisotropy for transitions are found by the polarized photoluminescence spectra at room temperature. (c) 2008 American Institute of Physics.

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Nanostructured KSr2Nb5O15 oxide was synthesized by the polymeric precursor method, a chemical synthesis route based on the Pechini's method. The X-ray diffraction (XRD) pattern of the calcined powder at 1150 degreesC were performed in the angular range 5 less than or equal to 20 less than or equal to 120degrees with a 0.02degrees step and a fixed counting time of 30 s. The XRD data were analyzed by the Rietveld refinements using the FullProf software. The results C showed a tetragonal system with the tetragonal tungsten bronze structure (TTB) type (a = 12.4585 (2) Angstrom and c = 3.9423 (6) Angstrom, V = 611,90 (2) Angstrom). In this work, the sites occupancy by the K+ and Sr2+ cations on the TTB type structure were determined. The thermal parameters (B) were analyzed. (C) 2004 Elsevier B.V. All rights reserved.

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Objectives Understanding the impact of the counterion on the properties of an acidic or basic drug may influence the choice of salt form, especially for less potent drugs with a high drug load per unit dose. The aim of this work was to determine the influence of the hydrogen bonding potential of the counterion on the crystal structure of salts of the poorly soluble, poorly compressible, acidic drug gemfibrozil and to correlate these with mechanical properties. Methods Compacts of the parent drug and the salts were used to determine Young's modulus of elasticity using beam bending tests. Crystal structures were determined previously from X-ray powder diffraction data. Key findings The free acid, tert-butylamine, 2-amino-2-methylpropan-1-ol and 2-amino-2-methylpropan-1, 3-diol salts had a common crystal packing motif of infinite hydrogen-bonded chains with cross-linking between pairs of adjacent chains. The tromethamine (trsi) salt, with different mechanical properties, had a two-dimensional sheet-like network of hydrogen bonds, with slip planes, forming a stiffer compact. Conclusions The type of counter ion is important in determining mechanical properties and could be selected to afford slip and plastic deformation. © 2010 Royal Pharmaceutical Society of Great Britain.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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The PhD activity described in this Thesis was focused on the study of metal-oxide wide-bandgap materials, aiming at fabricating new optoelectronic devices such as solar-blind UV photodetectors, high power electronics, and gas sensors. Photocurrent spectroscopy and DC photocurrent time evolution were used to investigate the performance of prototypes under different atmospheres, temperatures and excitation wavelengths (or dark conditions). Cathodoluminescence, absorption spectroscopy, XRD and SEM were used to assess structural, morphologic, electrical and optical properties of materials. This thesis is divided into two main sections, each describing the work done on a different metal-oxide semiconductor. 1) MOVPE-grown Ga2O3 thin films for UV solar-blind photodetectors and high power devices The semiconducting oxides, among them Ga2O3, have been employed for several decades as transparent conducting oxide (TCO) electrodes for fabrication of solar cells, displays, electronic, and opto-electronic devices. The interest was mainly confined to such applications, as these materials tend to grow intrinsically n-type, and attempts to get an effective p-type doping has consistently failed. The key requirements of TCO electrodes are indeed high electrical conductivity and good transparency, while crystallographic perfection is a minor issue. Furthermore, for a long period no high-quality substrates and epi-layers were available, which in turn impeded the development of a truly full-oxide electronics. Recently, Ga2O3 has attracted renewed interest, as large single crystals and high-quality homo- and hetero-epitaxial layers became available, which paved the way to novel application areas. Our research group spent the last two years in developing a low temperature (500-700°C) MOVPE growth procedure to obtain thin films of Ga2O3 on different substrates (Dept. of Physics and IMEM-CNR at UNIPR). We obtained a significant result growing on oriented sapphire epitaxial films of high crystalline, undoped, pure phase -Ga2O3 (hexagonal). The crystallographic properties of this phase were investigated by XRD, in order to clarify the lattice parameters of the hexagonal cell. First design and development of solar blind UV photodetectors based on -phase was carried out and the optoelectronic performance is evaluated by means of photocurrent spectroscopy. The UV-response is adequately fast and reliable to render this unusual phase a subject of great interest for future applications. The availability of a hexagonal phase of Ga2O3 stable up to 700°C, belonging to the same space group of gallium nitride, with high crystallinity and tunable electrical properties, is intriguing in view of the development of nitride-based devices, by taking advantage of the more favorable symmetry and epitaxial relationships with respect to the monoclinic β-phase. In addition, annealing at temperatures higher than 700°C demonstrate that the hexagonal phase converts totally in the monoclinic one. 2) ZnO nano-tetrapods: charge transport mechanisms and time-response in optoelectronic devices and sensors Size and morphology of ZnO at the nanometer scale play a key role in tailoring its physical and chemical properties. Thanks to the possibility of growing zinc oxide in a variety of different nanostructures, there is a great variety of applications, among which gas sensors, light emitting diodes, transparent conducting oxides, solar cells. Even if the operation of ZnO nanostructure-based devices has been recently demonstrated, the mechanisms of charge transport in these assembly is still under debate. The candidate performed an accurate investigation by photocurrent spectroscopy and DC-photocurrent time evolution of electrical response of both single-tetrapod and tetrapod-assembly devices. During the research done for this thesis, a thermal activation energy enables the performance of samples at high temperatures (above about 300°C). The energy barrier is related to the leg-to-leg interconnection in the assembly of nanotetrapods. Percolation mechanisms are responsible for both the very slow photo-response (minutes to hours or days) and the significant persistent photocurrent. Below the bandgap energy, electronic states were investigated but their contribution to the photocurrent are two-three order of magnitude lower than the band edge. Such devices are suitable for employ in photodetectors as well as in gas sensors, provided that the mechanism by which the photo-current is generated and gas adsorption on the surface modify the conductivity of the material are known.

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O objetivo deste trabalho foi a investigação das propriedades ópticas e estruturais de materiais isolantes contendo metais de transição do grupo do ferro como impurezas substitucionais. As técnicas usadas para o estudo de amostras MgGa2O4, MgGa2O4 + B- Ga2O3 e ZnGa2O4 dopadas com Cr3+e Fe3+ foram: fotoluminescência, excitação, difração de raios-X, espalhamento de nêutrons, método de Rietveld para o refinamento da estrutura e espectroscopia fotoacústica. Estas técnicas permitem a determinação da coordenação do sítio impureza, a atribuição das transições de energia, o cálculo dos parâmetros de energia e a determinação de propriedades cristalográficas. As amostras apresentam largas bandas de energia nas regiões do visível e do infravermelho. Estas transições indicam a relevância deste estudo pelo interesse tecnológico na obtenção de novos materais com bandas sintonizáveis. No primeiro capítulo apresentamos uma introdução à teoria de campo cristalino. No segundo capítulo apresentamos medidas de fotoluminescência e excitação do MgGa2O4 dopado com 0,1, 0,5, 1,0 e 5,0 % de Cr3+ a 77 K e temperatura ambiente. No terceiro capítulo usamos fotoluminescência, excitação, espalhamento de nêutrons, difração de raios X, fotoacústica e método de refino de Rietveld para analisar o sistema MgGa2O4 + B-Ga2O3 contendo 0,1, 0,5, 1,0 e 5,0 % de Cr3+. No quarto capítulo mostramos resultados de fotoacústica para o ZnGa2O4 dopado com 5% e 10% de Fe3+.

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Les propriétés intrinsèques, photophysiques, électrochimiques et cristallographiques des molécules fluorescentes 4,4'-bis(2-benzoxazolyle)stilbène (BBS) et 2,5-bis(5-tert-butyl-2-benzoxazolyle)thiophène (BBT) ont été étudiées en solution et dans les polymères semi-cristallins : poly(butylène succinate) (PBS) et polylactide (PLA). Les deux fluorophores sont caractérisés par de hauts rendements quantiques absolus de fluorescence. Toutefois, une désactivation de la fluorescence peut se produire par croisement intersystème vers l'état triplet pour le BBT, et par photoisomérisation trans-cis pour le BBS. La cinétique de ce dernier processus dépend de la concentration, résultant en un pur isomère cis photo-induit à faibles concentrations, qui est accompagné à des concentrations élevées par l'apparition d'un composé acide après photo-clivage suivi d'une oxydation. Cette étude a révélé des changements spectroscopiques prononcés suite à l’augmentation de la concentration des fluorophores, en particulier à l'état solide, spécifiques à l'agrégation des molécules à l'état fondamental pour le BBT et à la formation d’excimères pour le BBS, permettant ainsi de corréler les propriétés fluorescentes avec les caractéristiques du monocristal pour chaque fluorophore. En outre, le passage d’une dispersion moléculaire à une séparation de phases dans le cas du BBS est accompagné d'un changement de couleur du bleu au vert, qui est sensible à la déformation, à la température et au temps, affectant les rendements quantiques absolus de fluorescence et fournissant une large opportunité à la création d'une grande variété de polymères intelligents indicateurs capables d'auto-évaluation. D’autre part, la solubilité élevée du BBT dans les solvants courants, combinée à ses propriétés optoélectroniques élevées, en font un candidat en tant que référence universelle de fluorescence et matériau intelligent à la fois pour les études de polymères et en solution. Similairement aux mélanges comprenant des polymères miscibles, l'orientation du PBS augmente après ajout d'une molécule fluorescente, dont les monomères ont tendance à être orientés dans des films étirés, contrairement aux excimères ou agrégats.

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Effect of varying spray rate on the structure and optoelectronic properties of spray pyrolysed ZnO film is analysed. ZnO films were characterised using different techniques such as X-ray diffraction (XRD), photoluminescence, electrical resistivity measurement, and optical absorption. The XRD analysis proved that, with the increase in spray rate, orientation of the grains changed from (1 0 1) plane to (0 0 2) plane. The films exhibited luminescence in two regions—one was the ‘near band-edge’ (NBE) (∼380 nm) emission and the other one was the ‘blue-green emission’ (∼503 nm). Intensity of the blue-green emission decreased after orientation of grains shifted to (0 0 2) plane. Scanning electron microscope (SEM) analysis of the films asserts that spray rate has major role in improving the crystallographic properties of the films. Moreover resistivity of the films could be lowered to 2.4×10−2 cm without any doping or post-deposition annealing

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Rice production in Brazil in 2010 was approximately 12,2 million tons, and to reach that amount several planting techniques were used with different strains of rice in different rice-growing areas. Since Rice Husk Ash (RHA) is the pozzolan of vegetable origin most studied by researchers working in the area of pozzolanic materials, the present paper evaluates the influence that the form of planting, the climate, the soil, the strain of rice and the origin/amount of nitrogen-based fertilizers used in rice cultivation has on the chemical composition and crystallographic properties of RHA. The results obtained in this paper, confirm the importance of carrying out routine chemical analysis and X-Ray diffraction to maintain the quality control of the CCAs produced, because in situations of large-scale production, husks of different origins may be used.

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Compared with the traditional composites, the incorporation of carbon nanotubes into polymeric matrices can generate materials with superior properties, especially thermal, electrical and tribological properties. The aim of this study was to study the polyamide 6.6/carbon nanotubes (PA 6.6/CNT) nanostructured composites crystallization kinetics. The solution mixing technique was used to obtain the nanostructured composites studied in this work. PA 6.6 films were produced with amounts of 0.1, 0.5, and 1.0 wt% (weight/weight) CNT. X-ray diffraction analyses were performed in order to determine the crystallographic properties of nanostructured composite. The nanostructured composites crystallization kinetic study was performed using the differential scanning calorimetry under isothermal and nonisothermal (dynamic) conditions. The results have shown addition of CNTs in the PA 6.6 reduces the Avrami exponent, affecting the crystallization process of the composite. © The Author(s) 2012.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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It is lively debated how eclogites find their way from deep to mid-crustal levels during exhumation. Different exhumation models for high-pressure and ultrahigh-pressure rocks were suggested in previous studies, based mainly on field observations and less on microstructural studies on the exhumed rocks. The development and improvement of electron microscopy techniques allows it, to focus interest on direct investigations of microstructures and crystallographic properties in eclogites. In this case, it is of importance to study the applicability of crystallographic measurements on eclogites for exhumation processes and to unravel which processes affect eclogite textures. Previous studies suggested a strong relationship between deformation and lattice preferred orientation (LPO) in omphacite but it is still unclear if the deformation is related to the exhumation of eclogites. This study is focused on the questions which processes affect omphacite LPO and if textural investigations of omphacite are applicable for studying eclogite exhumation. Therefore, eclogites from two examples in the Alps and in the Caledonides were collected systematically and investigated with respect to omphacite LPO by using the electron backscattered diffraction (EBSD) technique. Omphacite textures of the Tauern Window (Austria) and the Western Gneiss Region (Norway) were studied to compare lattice preferred orientation with field observations and suggested exhumation models from previous studies. The interpretation of omphacite textures, regarding the deformation regime is mainly based on numerical simulations in previous studies. Omphacite LPO patterns of the Eclogite Zone are clearly independent from any kind of exhumation process. The textures were generated during omphacite growth on the prograde path of eclogite development until metamorphic peak conditions. Field observations in the Eclogite Zone show that kinematics in garnet mica schist, surrounding the eclogites, strongly indicate an extrusion wedge geometry. Stretching lineations show top-N thrusting at the base and a top-S normal faulting with a sinistral shear component at the top of the Eclogite Zone. The different shear sense on both sides of the unit does not affect the omphacite textures in any way. The omphacite lattice preferred orientation patterns of the Western Gneiss Region can not be connected with any exhumation model. The textures were probably generated during the metamorphic peak and reflect the change from subduction to exhumation. Eclogite Zone and Western Gneiss Region differ significantly in size and especially in metamorphic conditions. While the Eclogite Zone is characterized by constant P-T conditions (600-650°C, 20-25 kbar), the Western Gneiss Region contains a wide P-T range from high- to ultrahigh pressure conditions (400-800°C, 20-35 kbar). In contrast to this, the omphacite textures of both units are very similar. This means that omphacite LPO is independent from P-T conditions and therefore from burial depth. Further, in both units, omphacite LPO is independent from grain and subgrain size as well as from any shape preferred orientation (SPO) on grain and subgrain scale. Overall, omphacite lattice preferred orientation are generated on the prograde part of omphacite development. Therefore, textural investigations on omphacite LPO are not applicable to study eclogite exhumation.