High contrast plasma mirror: spatial filtering and second harmonic generation at 10(19)Wcm(-2)

Recently, the use of plasma optics to improve temporal pulse contrast has had a remarkable impact on the field of high- power laser-solid density interaction physics. Opening an avenue to previously unachievable plasma density gradients in the high intensity focus, this advance has enabled researchers to investigate new regimes of harmonic generation and ion acceleration. Until now, however, plasma optics for fundamental laser reflection have been used in the sub-relativistic intensity regime (10(15) - 10(16)Wcm(-2)) showing high reflectivity (similar to 70%) and good focusability. Therefore, the question remains as to whether plasma optics can be used for such applications in the relativistic intensity regime (> 10(18)Wcm(-2)). Previous studies of plasma mirrors (PMs) indicate that, for 40 fs laser pulses, the reflectivity fluctuates by an order of magnitude and that focusability of the beam is lost as the intensity is increased above 5 x 10(16)Wcm(-2). However, these experiments were performed using laser pulses with a contrast ratio of similar to 10(7) to generate the reflecting surface. Here, we present results for PM operation using high contrast laser pulses resulting in a new regime of operation - the high contrast plasma mirror (HCPM). In this regime, pulses with contrast ratio > 10(10) are used to form the PM surface at > 10(19)Wcm(-2), displaying excellent spatial filtering, reflected near- field beam profile of the fundamental beam and reflectivities of 60 +/- 5%. Efficient second harmonic generation is also observed with exceptional beam quality suggesting that this may be a route to achieving the highest focusable harmonic intensities. Plasma optics therefore offer the opportunity to manipulate ultra-intense laser beams both spatially and temporally. They also allow for ultrafast frequency up-shifting without detrimental effects due to group velocity dispersion (GVD) or reduced focusability which frequently occur when nonlinear crystals are used for frequency conversion.

Integrating LED lighting design strategies with side daylighting systems to improve interior lighting design of office buildings

A high contrast ratio between windows and surrounding walls may lead to office workers visual discomfort that could negatively affect their satisfaction and productivity. Consequently, occupants may try to adapt their working environment by closing blinds and/ or turning on the lights to enhance indoor visual comfort, which can reduce predicted energy savings. The hypothesis of this study is that reducing luminance contrast ratio on the window wall will improve window appearance which potentially will reduce visual discomfort and decrease workers interventions. Thus, this PhD research proposes a simple strategy to diminish the luminance contrast on the window wall by increasing the luminance of the areas surrounding the windows using supplementary light emitting diode (LED) systems. To test the hypothesis, this investigation will involve three experiments in different office layouts with various window types and orientations in Brisbane, Australia. It will assess user preferences for different luminance patterns in windowed offices featuring flexible, lowpower LED lighting installations that allows multiple lighting design options on the window wall. Detailed luminance and illuminance measures will be used to match quantitative lighting design assessment to user preferences.

Optical, electrochemical and morphological investigations of poly (3,4-propylenedioxythiophene)-sultone (PProDOT-S) thin films

In this paper, we have carried out thin film characterization of poly(3,4-propylenedioxythiophene)-sultone (PProDOT-S), a derivative of electrochromic poly(3,4-propylenedioxythiophene) (PProDOT). PProDOT-S was deposited onto transparent conducting oxide coated glass substrates by solution casting method. Single wavelength spectrophotometry is used to monitor the switching speed and contrast ratio at maximum wavelength (lambda (max)). The percentage transmittance at the lambda (max) of the neutral polymer is monitored as a function of time when the polymer film is repeatedly switched. This experiment gives a quantitative measure of the speed with which a film is able to switch between the two states i.e. the coloured and the bleached states. PProDOT-S films were switched at a voltage of 1 center dot 9 V with a switching speed of 2 s at lambda (max) of 565 nm and showed a contrast of similar to 37%. Cyclic voltammetry performed at different scan rates have shown the characteristic anodic and cathodic peaks. The structural investigations of PProDOT-S films by IR spectra were in good agreement with previously reported results. Raman spectra of PProDOT-S showed a strong Raman peak at 1509 cm (-aEuro parts per thousand 1) and a weak peak at 1410 cm (-aEuro parts per thousand 1) due to the C = C asymmetric and symmetric stretching vibrations of thiophene rings. The morphological investigations carried out by using scanning electron microscope (SEM) of polymer films have shown that these polymers are found to be arranged in dense packed clusters with non-uniform distribution having an average width and length of 95 nm and 160 nm, respectively.

Dispersion analysis and compensation of collinear optical parametric chirped pulse amplification systems

In an optical parametric chirped pulse amplification (OPCPA) laser system, residual phase dispersion should be compensated as much as possible to shorten the amplified pulses and improve the pulse contrast ratio. Expressions of orders of the induced phases in collinear optical parametric amplification (OPA) processes are presented at the central signal wavelength to depict a clear physics picture and to simplify the design of phase compensation. As examples, we simulate two OPCPA systems to compensate for the phases up to the partial fourth-order terms, and obtain flat phase spectra of 200-nm bandwidth at 1064 nm and 90-nm at 800 nm.

Ultrafast control of multiple filamentation by ultrafast laser pulses

Control of multiple filamentation by laser-induced microlens effect due to a nonlinear interaction of two overlapping laser beams inside a glass plate was demonstrated. Individual or multiple spots on the white light pattern which is a product of multiple filamentation through a mesh can be switched on and off with a very high contrast ratio on a femtosecond time scale. This phenomenon can find applications such as ultrafast optical switch and high-speed sampling. (C) 2005 American Institute of Physics.

Pulse temporal cleaner based on nonlinear ellipse rotation by using BK7 glass plate

We report a new pulse cleaning technique to enhance the contrast ratio of intense ultra-short laser pulses. A pulse temporal cleaner based on nonlinear ellipse rotation by using BK7 glass plate is developed, and a contrast ratio improvement of two orders of magnitude for the milli-joule level femtosecond input pulses is demonstrated, the total transmission efficiency of the pulse cleaner is 16.7%.

Characteristics of 980/1550 nm WDM coupler based on planar curved waveguides

A wavelength division multiplexer (WDM) for 980/1550 nm based on planar curved waveguide coupler (CWC) is proposed. Compared with conventional parallel straight waveguide coupler (SWC), this structure has more flexibility with two variable parameters of bending radius R and minimum edge-to-edge spacing do, which are the two main parameters for the splitting ratio of coupler and decrease the complexity of device design and fabrication. Based on coupled mode theory (CMT) and waveguide theory, R and do of the WDM CWC are designed to be R = 13.28 m and d(0) = 4.39 mu m. The contrast ratio (CR) and insertion loss (IL) for 980 and 1550 nm are CR1 = 24.62 dB, CR2 = 24.56 dB and IL1 = 0.014 dB, IL2 = 0.015 dB, respectively. The 3D beam propagation method (BPM) is used to verify the validity of the design result. The influence of R and d(0) variations on the device performance is analyzed. For CR > 20 dB, the variation ranges of R and d(0) should be within -0.10 to +0.44 m and -0.05 to + 0.02 mu m, respectively. (c) 2006 Elsevier GmbH. All rights reserved.

宽光束进入展宽器提高输出脉冲对比度分析

根据分析啁啾脉冲对比度模型,通过光线追迹法详细分析了展宽器对输出脉冲对比度的影响.发现当扩大进入展宽器的入射光束口径,从2mm扩大到40mm时,输出脉冲的对比度提高了近两个数量级;同时发现在相同条件下,当输入脉冲为双曲正割函数时,其输出脉冲的对比度明显好于输入脉冲为高斯脉冲和矩形脉冲的情形。

展宽器中非对称光谱剪切对输出脉冲对比度的影响

在展宽器中,光谱的剪切情况非常重要,它直接影响输出脉冲的质量。以ffner展宽器为例,参照以往建立的光线追迹模型,建立了分析展宽器中光谱剪切的模型。发现当展宽器的参数确定好后,光栅放置的位置对激光脉冲光谱剪切有非常重要的影响。当光栅相对于光轴中心对称放置时,展宽器容许通过的光谱相对于激光中心波长将是非对称分布的,即此时在展宽器中发生的光谱剪切为非对称光谱剪切,在神光II第9路拍瓦激光装置中,这种非对称光谱剪切将使输出脉冲对比度下降一个数量级。为了使展宽器中通过的光谱相对于激光中心波长对称分布,需要将光栅相对于光轴非中心对称放置。

数值模拟探针诱导表面等离子体共振耦合纳米光刻

采用有损耗介质和色散介质的二维时域有限差分方法,数值模拟了以光波长514.5 nm的p偏振基模高斯光束为入射光源,激发Kretschmann型表面等离子体共振,并通过探针的局域场增强效应实现纳米光刻的新方法——探针诱导表面等离子体共振耦合纳米光刻.分别就探针与记录层的间距以及探针针尖大小,模拟分析了不同情况下探针的局域场增强效应和记录层表面的相对电场强度振幅分布.结果表明,探针工作在接触模式时,探针的局域场增强效应最明显,记录层表面的相对电场强度振幅的对比度最大;当探针针尖距记录层5 nm时,针尖下方记录层表面的相对电场强度振幅大于光刻临界值的分布宽度与针尖尺寸相近.

Flexoelectro-optic properties of chiral nematic liquid crystals in the uniform standing helix configuration.

The flexoelectro-optic effect describes the rotation of the optic axis of a short-pitch chiral nematic liquid crystal under the application of an electric field. We investigate the effect in the uniform standing helix, or "Grandjean" configuration. An in-plane electric field is applied. The director profile is determined numerically using a static one-dimensional continuum model with strong surface anchoring. The Berreman method is used to solve for plane-wave solutions to Maxwell's equations, and predict the optical properties of the resulting structure in general cases. By using a chiral nematic with short pitch between crossed polarizers an optical switch may be generated. With no applied field the configuration is nontransmissive at normal incidence, but becomes transmissive with an applied field. For this case, numerical results using the Berreman method are supplemented with an analytic theory and found to be in good agreement. The transmitted intensity as a function of tilt, the contrast ratio, and the tilt required for full intensity modulation are presented. The angular dependence of the transmission is calculated and the isocontrast curves are plotted. For typical material and cell parameters a switching speed of 0.017 ms and contrast ratio of 1500:1 at normal incidence are predicted, at a switch-on tilt of 41.5 degrees. Experimental verification of the analytic and numerical models is provided.

All-optical switching in a vertical coupler space switch employing photocarrier-induced nonlinearity

A novel compact integrated nonlinear optical switch is demonstrated. Using a high-power picosecond pulse of 5-ps pulsewidth and 250-MHz repetition rate, all-optical switching with a contrast ratio of 23 dB has been achieved using an in-fiber input power < 14 dBm (100 pJ/pulse). The switch speed depends on the carrier sweep-out time, which can be reduced to the 10 ps range by either applying a reverse bias or by introduction of carrier recombination centers in the active layer.

Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs quantum wells

A resonant-cavity enhanced reflective optical modulator is designed and frabricated, with three groups of three highly strained InGaAS/GaAs quantum wells in the cavity, for the low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AIAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.