Absence of magnetically induced fractional quantization in atomic contacts

Using the mechanically controlled break junction technique at low temperatures and under cryogenic vacuum conditions we have studied atomic contacts of several magnetic (Fe, Co, and Ni) and nonmagnetic (Pt) metals, which recently were claimed to show fractional conductance quantization. In the case of pure metals we see no quantization of the conductance nor half quantization, even when high magnetic fields are applied. On the other hand, features in the conductance similar to (fractional) quantization are observed when the contact is exposed to gas molecules. Furthermore, the absence of fractional quantization when the contact is bridged by H2 indicates the current is never fully polarized for the metals studied here. Our results are in agreement with recent model calculations.

Electron and hole transport through quantum dots

The transmission through quantum dots (QDs) is calculated using the recursion method. In our calculation, the effect of finite offset is taken into account. The results show that the shapes of the QDs determine the number of resonant tunneling peaks and the distances between the peaks decrease as the radii of the QDs increase. The intensities of the conductance are strongly dependent on the barrier widths. The conductance peaks are split when transmitting through two QDs. The theoretical results qualitatively agree with the available experimental data. Our calculated results should be useful for the application of QDs to photoelectric devices. (C) 2002 American Institute of Physics.

Comment on “Electron transport through correlated molecules computed using the time-independent Wigner function: Two critical tests”

The many-electron-correlated scattering (MECS) approach to quantum electronic transport was investigated in the linear-response regime [I. Bâldea and H. Köppel, Phys. Rev. B 78, 115315 (2008). The authors suggest, based on numerical calculations, that the manner in which the method imposes boundary conditions is unable to reproduce the well-known phenomena of conductance quantization. We introduce an analytical model and demonstrate that conductance quantization is correctly obtained using open system boundary conditions within the MECS approach.

Evolution of conducting channels in metallic atomic contacts under elastic deformation

We investigate both experimentally and theoretically the evolution of conductance in metallic one-atom contacts under elastic deformation. While simple metals like Au exhibit almost constant conductance plateaus, Al and Pb show inclined plateaus with positive and negative slopes. It is shown how these behaviors can be understood in terms of the orbital structure of the atoms forming the contact. This analysis provides further insight into the issue of conductance quantization in metallic contacts revealing important aspects of their atomic and electronic structures.

Quantum Hall effect in gapped graphene heterojunctions

We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, Δ1 and Δ2. We consider two main situations, Δ1=0,Δ2≠0, and Δ1=−Δ2. They are different in a fundamental aspect: only the latter features kink states that, when intervalley coupling is absent, are protected against backscattering. We compute the two-terminal conductance of heterostructures with channel length up to 430 nm, in two transport configurations, parallel and perpendicular to the interface. By studying the effect of disorder on the transport along the boundary, we quantify the robustness of kink states with respect to backscattering. Transport perpendicular to the boundary shows how interface states open a backscattering channel for the conducting edge states, spoiling the perfect conductance quantization featured by the homogeneously gapped graphene Hall bars. Our results can be relevant for the study of graphene deposited on hexagonal boron-nitride, as well as to model graphene with an interaction-driven gapped phase with two equivalent phases separated by a domain wall.

Impact of Energy Quantization on the Performance of Current-Biased SET Circuits

The current-biased single electron transistor (SET) (CBS) is an integral part of almost all hybrid CMOS SET circuits. In this paper, for the first time, the effects of energy quantization on the performance of CBS-based circuits are studied through analytical modeling and Monte Carlo simulations. It is demonstrated that energy quantization has no impact on the gain of the CBS characteristics, although it changes the output voltage levels and oscillation periodicity. The effects of energy quantization are further studied for two circuits: negative differential resistance (NDR) and neuron cell, which use the CBS. A new model for the conductance of NDR characteristics is also formulated that includes the energy quantization term.

Analysis of Energy Quantization Effects on Single-Electron Transistor Circuits

In this paper, the effects of energy quantization on different single-electron transistor (SET) circuits (logic inverter, current-biased circuits, and hybrid MOS-SET circuits) are analyzed through analytical modeling and Monte Carlo simulations. It is shown that energy quantizationmainly increases the Coulomb blockade area and Coulomb blockade oscillation periodicity, and thus, affects the SET circuit performance. A new model for the noise margin of the SET inverter is proposed, which includes the energy quantization effects. Using the noise margin as a metric, the robustness of the SET inverter is studied against the effects of energy quantization. An analytical expression is developed, which explicitly defines the maximum energy quantization (termed as ``quantization threshold'') that an SET inverter can withstand before its noise margin falls below a specified tolerance level. The effects of energy quantization are further studiedfor the current-biased negative differential resistance (NDR) circuitand hybrid SETMOS circuit. A new model for the conductance of NDR characteristics is also formulated that explains the energy quantization effects.

Mechanisms for extra conductance plateaus in quantum wires

Spin-density-functional theory is employed to calculate the conductance G through a quasi-one-dimensional quantum wire. In addition to the usual subband quantization plateaus at G=n(2e(2)/h), we find additional structures at (n+1/2)(2e(2)/h). The extra structures appear whether or not the electrons in the wire spin polarize. However, only the spin-polarized case reproduces the experimental temperature and magnetic field dependences.

Quantum dot superlattices and their conductance

The one-dimensional energy bands and corresponding conductivities of a T-shaped quantum-dot superlattice are studied in various cases: different periods, with potential barriers between dots, and in transverse electric fields. It is found that the conductivity of the superlattices has a similar energy relation to the conductance of a single quantum dot, but vanishes in the energy gap region. The energy band of a superlattice with periodically modulated conducting width in the perpendicular magnetic field is calculated for comparison with magneto-transport experiments. It is found that due to the edge state effect the electron has strong quantum transport features. The energy gaps change with the width of the channel, corresponding to the deep peaks in the conductance curve. This method of calculating the energy bands of quantum-dot superlattices is applicable to complex geometric structures without substantial difficulty. (C) 1997 American Institute of Physics.

Quantum conductance of multiwall carbon nanotubes

An analysis on the conductance of multiwall carbon nanotubes (MWNT's) is presented. Recent experiment indicated that MWNT's are good quantum conductors. Our theory shows that tunneling current between states on different walls of a defect-free, infinitely long MWNT is vanishingly small in general, which leads to the quantization of the conductance of the MWNT's. With a reasonable simple model, we explicitly show that the conductance of a capped MWNT can be determined by the outermost wall for an infinitely long nanotube. We apply the theory to finite MWNT's and estimate the generic interwall conductance to be negligible compared to the intrawall ballistic conductance.

Large margin vector quantization

In this paper we describe the Large Margin Vector Quantization algorithm (LMVQ), which uses gradient ascent to maximise the margin of a radial basis function classifier. We present a derivation of the algorithm, which proceeds from an estimate of the class-conditional probability densities. We show that the key behaviour of Kohonen's well-known LVQ2 and LVQ3 algorithms emerge as natural consequences of our formulation. We compare the performance of LMVQ with that of Kohonen's LVQ algorithms on an artificial classification problem and several well known benchmark classification tasks. We find that the classifiers produced by LMVQ attain a level of accuracy that compares well with those obtained via LVQ1, LVQ2 and LVQ3, with reduced storage complexity. We indicate future directions of enquiry based on the large margin approach to Learning Vector Quantization.

Bitrate modeling of scalable videos using quantization parameter, frame rate and spatial resolution

The quality and bitrate modeling is essential to effectively adapt the bitrate and quality of videos when delivered to multiplatform devices over resource constraint heterogeneous networks. The recent model proposed by Wang et al. estimates the bitrate and quality of videos in terms of the frame rate and quantization parameter. However, to build an effective video adaptation framework, it is crucial to incorporate the spatial resolution in the analytical model for bitrate and perceptual quality adaptation. Hence, this paper proposes an analytical model to estimate the bitrate of videos in terms of quantization parameter, frame rate, and spatial resolution. The model can fit the measured data accurately which is evident from the high Pearson correlation. The proposed model is based on the observation that the relative reduction in bitrate due to decreasing spatial resolution is independent of the quantization parameter and frame rate. This modeling can be used for rate-constrained bit-stream adaptation scheme which selects the scalability parameters to optimize the perceptual quality for a given bandwidth constraint.

Vector quantization based Gaussian modeling for speaker verification

Gaussian mixture models (GMMs) have become an established means of modeling feature distributions in speaker recognition systems. It is useful for experimentation and practical implementation purposes to develop and test these models in an efficient manner particularly when computational resources are limited. A method of combining vector quantization (VQ) with single multi-dimensional Gaussians is proposed to rapidly generate a robust model approximation to the Gaussian mixture model. A fast method of testing these systems is also proposed and implemented. Results on the NIST 1996 Speaker Recognition Database suggest comparable and in some cases an improved verification performance to the traditional GMM based analysis scheme. In addition, previous research for the task of speaker identification indicated a similar system perfomance between the VQ Gaussian based technique and GMMs

Zero-bias conductance and energy gap measurements in LaNiO3-YBa2Cu3O7-x junctions

Conductance measurements of junctions between a high- superconductor and a metallic oxide have been carried out along the a-b plane to examine the tunnel-junction spectra. For these measurements, in situ films have been grown on c-axis oriented thin films using the pulsed laser deposition technique. Two distinctive energy gaps have been observed along with conductance peaks around zero bias. The analysis of zero-bias conductance and energy gap data suggests the presence of midgap states located at the centre of a finite energy gap. The results obtained are also in accordance with the d-wave nature of high- superconductors.