Proceedings of the Japan-U.S. Seminar on HTGR Safety Technology, September 15-16, 1977, Brookhaven National Laboratory, Upton, N. Y. /

"NUREG/CR-0358, BNL-NUREG-50689, NRC-8"

Conference on waste processing; meeting of U. S. Atomic Energy Commission Waste Processing Committee, March 27-28, 1950. Section 1. Brookhaven National Laboratory waste problems. J. H. Hayner, permanent chairman, B. Manowitz, host chairman.

On cover: Brookhaven conference report. B. N. L. Associated Universities, Inc. under contract with U. S. Atomic Energy Commission.

A hydrologic analysis of postulated liquid-waste releases : Brookhaven National Laboratory, Suffolk County, New York /

Mode of access: Internet.

Proceedings of the Third Japan-U.S. Seminar on HTGR Safety Technology, June 2-3, 1982, Brookhaven National Laboratory, Upton, New York 11973 /

Includes bibliographical references.

Argonne National Laboratory.

Mode of access: Internet.

Report on labor dispute at Oak Ridge National Laboratory. Message from the President of the United States transmitting Report to Congress concerning the labor dispute which recently existed at the Oak Ridge National Laboratory.

Mode of access: Internet.

Proceedings of the U.S. Nuclear Regulatory Commission Thirteenth Water Reactor Safety Research Information Meeting, held at National Bureau of Standards, Gaithersburg, Maryland, October 22-25, 1985 /

Includes bibliographies.

Department of Energy National Laboratory Cooperative Research Initiatives Act : hearings before the Subcommittee on Energy Research and Development of the Committee on Energy and Natural Resources, United States Senate, One Hundredth Congress, first session on S. 1480 ... September 15 and 17, 1987.

Shipping list no.: 88-374-P (pt. 1).

PP backward elastic scattering between 0.70 and 2.37 GeV/c

̄pp backward elastic scattering has been measured for the cos θ_cm region between – 1.00 and – 0.88 and for the incident ̄p laboratory momentum region between 0.70 and 2.37 GeV/c. These measurements, done in intervals of approximately 0.1 GeV/c, have been performed at the Alternating Gradient Synchrotron at Brookhaven National Laboratory during the winter of 1968. The measured differential cross sections, binned in cos θ_cm intervals of 0.02, have statistical errors of about 10%. Backward dipping exists below 0.95 GeV/c and backward peaking above 0.95 GeV/c. The 180˚ differential cross section extrapolated from our data shows a sharp dip centered at 0.95 GeV/c and a broad hump centered near 1.4 GeV/c. Our data have been interpreted in terms of resonance effects and in terms of diffraction dominance effects.

Electron beam and laser testing on the novel stripixel detectors

The novel Si stripixel detector, developed at BNL (Brookhaven National Laboratory), has been applied in the development of a prototype Si strip detector system for the PHENIX Upgrade at RHIC. The Si stripixel detector can generate X-Y two-dimensional (2D) position sensitivity with single-sided processing and readout. Test stripixel detectors with pitches of 85 and 560 mu m have been subjected to the electron beam test in a SEM set-up, and to the laser beam test in a lab test fixture with an X-Y-Z table for laser scanning. Test results have shown that the X and Y strips are well isolated from each other, and 2D position sensitivity has been well demonstrated in the novel stripixel detectors. (c) 2005 Elsevier B.V. All rights reserved.

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator

A surface-region-purification-induced p-n junction, a puzzle discovered at Brookhaven National Laboratory, in a silicon-on-defect-layer (SODL) material has been explored by carrying out various annealing conditions and subsequent measurements on electrical properties. The origin of the pn junction has been experimentally investigated. Furthermore, the p-n junction has been transformed into a p-i-n electrical structure by adding a high temperature annealing process to the previously used SODL procedure, making the SODL material approach silicon on insulator (SOI). The control of the initial oxygen amount in the silicon material is suggested to be critical for the experimental results.