First results of SECRAL at 18GHz for intense beam production of highly charged ions

A Superconducting ECR ion source with Advanced design in Lanzhou (SECRAL) was successfully built to produce intense beams of highly charged ions for Heavy Ion Research Facility in Lanzhou (HIRFL). The ion source has been optimized to be operated at 28GHz for its maximum performance. The superconducting magnet confinement configuration of the ion source consists of three axial solenoid coils and six sextupole coils with a cold iron structure as field booster and clamping. For 28GHz operation, the magnet assembly can produce peak mirror fields on axis 3.6T at injection, 2.2T at extraction and a radial sextupole field of 2.0T at plasma chamber wall. A unique feature of SECRAL is that the three axial solenoid coils are located inside of the sextupole bore in order to reduce the interaction forces between the sextupole coils and the solenoid coils. During the ongoing commissioning phase at 18GHz with a stainless steel chamber, tests with various gases and some metals have been conducted with microwave power less than 3.2kW and it turned out the performance is very promising. Some record ion beam intensities have been produced, for instance, 810e mu A of O7+, 505e mu A of Xe20+, 306e mu A of Xe27+, 21e mu A of Xe34+, 2.4e mu A of Xe38+ and so on. To reach better results for highly charged ion beams, further modifications such as an aluminium chamber with better cooling, higher microwave power and a movable extraction system will be done, and also emittance measurements are being prepared.

Intense beam production of highly charged heavy ions by the superconducting electron cyclotron resonance ion source SECRAL (invited)

There has been increasing demand to provide higher beam intensity and high enough beam energy for heavy ion accelerator and some other applications, which has driven electron cyclotron resonance (ECR) ion source to produce higher charge state ions with higher beam intensity. One of development trends for highly charged ECR ion source is to build new generation ECR sources by utilization of superconducting magnet technology. SECRAL (superconducting ECR ion source with advanced design in Lanzhou) was successfully built to produce intense beams of highly charged ion for Heavy Ion Research Facility in Lanzhou (HIRFL). The ion source has been optimized to be operated at 28 GHz for its maximum performance. The superconducting magnet confinement configuration of the ion source consists of three axial solenoid coils and six sextupole coils with a cold iron structure as field booster and clamping. An innovative design of SECRAL is that the three axial solenoid coils are located inside of the sextupole bore in order to reduce the interaction forces between the sextupole coils and the solenoid coils. For 28 GHz operation, the magnet assembly can produce peak mirror fields on axis of 3.6 T at injection, 2.2 T at extraction, and a radial sextupole field of 2.0 T at plasma chamber wall. During the commissioning phase at 18 GHz with a stainless steel chamber, tests with various gases and some metals have been conducted with microwave power less than 3.5 kW by two 18 GHz rf generators. It demonstrates the performance is very promising. Some record ion beam intensities have been produced, for instance, 810 e mu A of O7+, 505 e mu A of Xe20+ 306 e mu A of Xe27+, and so on. The effect of the magnetic field configuration on the ion source performance has been studied experimentally. SECRAL has been put into operation to provide highly charged ion beams for HIRFL facility since May 2007.

Measurement of sensitivities for the thermal recording of laser beams

A simple technique for determining the energy sensitivities for the thermographic recording of laser beams is described. The principle behind this technique is that, if a laser beam with a known spatial distribution such as a Gaussian profile is used for imaging, the radius of the thermal image formed depends uniquely on the intensity of the impinging beam. Thus by measuring the radii of the images produced for different incident beam intensities the minimum intensity necessary (that is, the threshold) for thermographic imaging is found. The diameter of the laser beam can also be found from this measurement. A simple analysis based on the temperature distribution in the laser heated material shows that there is an inverse square root dependence on pulse duration or period of exposure for the energy fluence of the laser beam required, both for the threshold and the subsequent increase in the size of the recording. It has also been shown that except for low intensity, long duration exposure on very low conductivity materials, heat losses are not very significant.

Self-compression of femtosecond pulses in argon with a power close to the self-focusing threshold

Self-compression of femtosecond pulses in noble gases with an input power close to the self-focusing threshold has been investigated experimentally and theoretically. It is demonstrated that either multiphoton ionization (MPI) or space time focusing and self-steepening effects can induce pulse shortening, but they predominate at different beam intensities during the propagation. The latter effects play a key role in the final pulse self-compression. By choosing an appropriate focusing parameter, action distance of the space time focusing and self-steepening effects can be lengthened, which can promote a shock pulse structure with a duration as short as two optical cycles. It is also found that, for our calculation cases in which an input pulse power is close to the self-focusing threshold, either group velocity dispersion (GVD) or multiphoton absorption (MPA) has a negligible influence on pulse characteristics in the propagation process.

New development of advanced superconducting electron cyclotron resonance ion source SECRAL (invited)

Superconducting electron cyclotron resonance ion source with advance design in Lanzhou (SECRAL) is an 18-28 GHz fully superconducting electron cyclotron resonance (ECR) ion source dedicated for highly charged heavy ion beam production. SECRAL, with an innovative superconducting magnet structure of solenoid-inside-sextupole and at lower frequency and lower rf power operation, may open a new way for developing compact and reliable high performance superconducting ECR ion source. One of the recent highlights achieved at SECRAL is that some new record beam currents for very high charge states were produced by 18 GHz or 18+14.5 GHz double frequency heating, such as 1 e mu A of Xe-129(43+), 22 e mu A of Bi-209(41+), and 1.5 e mu A of Bi-209(50+). To further enhance the performance of SECRAL, a 24 GHz/7 kW gyrotron microwave generator was installed and SECRAL was tested at 24 GHz. Some promising and exciting results at 24 GHz with new record highly charged ion beam intensities were produced, such as 455 e mu A of Xe-129(27+) and 152 e mu A of Xe-129(30+), although the commissioning time was limited within 3-4 weeks and rf power only 3-4 kW. Bremsstrahlung measurements at 24 GHz show that x-ray is much stronger with higher rf frequency, higher rf power. and higher minimum mirror magnetic field (minimum B). Preliminary emittance measurements indicate that SECRAL emittance at 24 GHz is slightly higher that at 18 GHz. SECRAL has been put into routine operation at 18 GHz for heavy ion research facility in Lanzhou (HIRFL) accelerator complex since May 2007. The total operation beam time from SECRAL for HIRFL accelerator has been more than 2000 h, and Xe-129(27+), Kr-78(19+), Bi-209(31+), and Ni-58(19+) beams were delivered. All of these new developments, the latest results, and long-term operation for the accelerator have again demonstrated that SECRAL is one of the best in the performance of ECR ion source for highly charged heavy ion beam production. Finally the future development of SECRAL will be presented.

LHC luminosity measurement with the ATLAS-MPX detectors

En opération depuis 2008, l’expérience ATLAS est la plus grande de toutes les expériences au LHC. Les détecteurs ATLAS- MPX (MPX) installés dans ATLAS sont basés sur le détecteur au silicium à pixels Medipix2 qui a été développé par la collaboration Medipix au CERN pour faire de l’imagerie en temps réel. Les détecteurs MPX peuvent être utilisés pour mesurer la luminosité. Ils ont été installés à seize différents endroits dans les zones expérimentale et technique d’ATLAS en 2008. Le réseau MPX a recueilli avec succès des données indépendamment de la chaîne d’enregistrement des données ATLAS de 2008 à 2013. Chaque détecteur MPX fournit des mesures de la luminosité intégrée du LHC. Ce mémoire décrit la méthode d’étalonnage de la luminosité absolue mesurée avec les détectors MPX et la performance des détecteurs MPX pour les données de luminosité en 2012. Une constante d’étalonnage de la luminosité a été déterminée. L’étalonnage est basé sur technique de van der Meer (vdM). Cette technique permet la mesure de la taille des deux faisceaux en recouvrement dans le plan vertical et horizontal au point d’interaction d’ATLAS (IP1). La détermination de la luminosité absolue nécessite la connaissance précise de l’intensité des faisceaux et du nombre de trains de particules. Les trois balayages d’étalonnage ont été analysés et les résultats obtenus par les détecteurs MPX ont été comparés aux autres détecteurs d’ATLAS dédiés spécifiquement à la mesure de la luminosité. La luminosité obtenue à partir des balayages vdM a été comparée à la luminosité des collisions proton- proton avant et après les balayages vdM. Le réseau des détecteurs MPX donne des informations fiables pour la détermination de la luminosité de l’expérience ATLAS sur un large intervalle (luminosité de 5 × 10^29 cm−2 s−1 jusqu’à 7 × 10^33 cm−2 s−1 .

The effect of bulk light absorption on running photorefractive holograms

The influence of bulk light absorption on running photorefractive holograms is investigated. By solving the coupled wave equations we prove that the beam intensities, but not the beam phases, can be calculated by averaging the coupling constant over the crystal thickness. We show the importance of the effect by calculating the dielectric relaxation time at the crystal front, and from that the quantum efficiency from a feedback-controlled experiment with a 2.05 mm thick BTO crystal.We propose to simulate the effect of bulk light absorption by a rude estimate of the average dielectric relaxation time which is related in a simple way to the dielectric relaxation time at the crystal front, in doing so an error of less than 10% is introduced.

Developing new radiotherapy techniques using linac based gamma radiation sources

A major challenge in cancer radiotherapy is to deliver a lethal dose of radiation to the target volume while minimizing damage to the surrounding normal tissue. We have proposed a model on how treatment efficacy might be improved by interfering with biological responses to DNA damage using exogenous electric fields as a strategy to drastically reduce radiation doses in cancer therapy. This approach is demonstrated at this Laboratory through case studies with prokaryotes (bacteria) and eukaryotes (yeast) cells, in which cellkilling rates induced by both gamma radiation and exogenous electric fields were measured. It was found that when cells exposed to gamma radiation are immediately submitted to a weak electric field, cell death increases more than an order of magnitude compared to the effect of radiation alone. This finding suggests, although does not prove, that DNA damage sites are reached and recognized by means of long-range electric DNA-protein interaction, and that exogenous electric fields could destructively interfere with this process. As a consequence, DNA repair is avoided leading to massive cell death. Here we are proposing the use this new technique for the design and construction of novel radiotherapy facilities associated with linac generated gamma beams under controlled conditions of dose and beam intensity.

Kernspektroskopische Untersuchungen in der 132 Sn-Region

In der vorliegenden Arbeit werden die r-Prozesskerne rund um den N=82-Schalenabschluß untersucht. Dabei gelang es die bisher unbekannten Halbwertszeiten und Pn-Werte der Antimonisotope 137-139-Sb und von 139-Te zu messen. Des Weiteren wurden die Ergebnisse von Shergur et. al. zu extrem neutronenreichen Zinnisotopen (137,138-Sn) mit neuen Messungen untermauert und verbessert. Alle erhaltenen Ergebnisse werden mit entsprechenden Modellrechnungen verglichen und ihr Einfluss auf moderne Netzwerkrechnungen zum r-Prozess diskutiert. Des Weiteren gelang erstmalig die Aufnahmen von gamma-spektroskopischen Daten für das r-Prozessnuklid 136-Sn in Singlespektren. Aufgrund der hinlänglich bekannten Probleme mit Isobarenkontaminationen für Ionenstrahlen von sehr exotischen Molekülen an ISOL-Einrichtungen werden unterschiedliche technische Entwicklungen zur Verbesserung der Strahlqualität aufgezeigt. Ein besonderer Schwerpunkt liegt hier auf der neu eingeführten Technik der molekularen Seitenbänder an Massenseparatoren. Hier gelang es durch gezielte Zugabe von Schwefel in das Target ein starke SnS(+)-Seitenband zu etablieren und so bei guter Strahlintensität eine deutliche Reduktion des Isobarenuntergrunds zu erreichen. Ebenso werden die Möglichkeiten einer temperaturkontrollierten Quarztransferline zwischen Target und Ionenquelle zur Minimierung von Kontaminationen bespro-chen. Zur Verbesserung der Selektivität von Experimenten an sehr neutronenreichen Elementen wurde ein Detektorsystem zur n,gamma-Koinzidenzmessung entwickelt. Im Gegensatz zu früheren Versuchen dieser Art, gelang es durch eine entsprechende neue Elektronik striktere Koinzidenzbedingungen zu realisieren und so das Koinzidenzfenster deutlich zu verkleinern.

Characterization Of Friction Stir Welded Joints Of Aa 2024-T351 - Native Vs. Treated By Laser Shock Processing

The paper presents a consistent set of results showing the ability of Laser Shock Processing (LSP) in modifying the overall properties of the Friction Stir Welded (FSW) joints made of AA 2024-T351. Based on laser beam intensities above 109 W/cm2 with pulse energies of several Joules and pulses durations of nanoseconds, LSP is able of inducing a compression residual stress field, improving the wear and fatigue resistance by slowing crack propagation and stress corrosion cracking, but also improving the overall behaviour of the structure. After the FSW and LSP procedures are briefly presented, the results of micro-hardness measurements and of transverse tensile tests, together with the corrosion resistance of the native joints vs. LSP treated are discussed. The ability of LSP to generate compressive residual stresses and to improve the behaviour of the FSW joints is underscored.

Laser Shock Processing influence on local properties and overall tensile behavior of friction stir welded joints

Based on laser beam intensities above 109 W/cm2 with pulse energy of several Joules and duration of nanoseconds, Laser Shock Processing (LSP) is capable of inducing a surface compressive residual stress field. The paper presents experimental results showing the ability of LSP to improve the mechanical strength and cracking resistance of AA2024-T351 friction stir welded (FSW) joints. After introducing the FSW and LSP procedures, the results of microstructural analysis and micro-hardness are discussed. Video Image Correlation was used to measure the displacement and strain fields produced during tensile testing of flat specimens; the local and overall tensile behavior of native FSW joints vs. LSP treated were analyzed. Further, results of slow strain rate tensile testing of the FSW joints, native and LSP treated, performed in 3.5% NaCl solution are presented. The ability of LSP to improve the structural behavior of the FSW joints is underscored.

Diffraction properties of volume holographic gratings for an ultrashort pulsed beam with different polarization states readout

The diffraction properties of volume holographic gratings are studied when the gratings are illuminated by an ultrashort pulsed beam with different polarization states. The developed coupled wave theory of Kogelnik is used. Considering the dispersion effect of the grating media, solutions for the diffracted and transmitted intensities, diffraction efficiencies and the bandwidths of the gratings are given in transmission volume holographic gratings and reflection volume holographic gratings. The bandwidths of the gratings are reduced by the dispersion effect of the grating media. They also have different influences on the diffraction of an ultrashort pulsed beam with different polarization states. For different values of the ratio of the spectral bandwidth of the input pulse to that of the grating, the changes of the spectral and temporal distributions of the diffracted intensities, as well as the diffraction efficiencies of the gratings are shown.

Electron-beam-induced direct etching of graphene

We present electron-beam-induced oxidation of single- and bilayer graphene devices in a low-voltage scanning electron microscope. We show that the injection of oxygen leads to targeted etching at the focal point, enabling us to pattern graphene with a resolution of better than 20 nm. Voltage-contrast imaging, in conjunction with finite-element simulations, explain the secondary-electron intensities and correlate them to the etch profile. © 2013 Elsevier Ltd. All rights reserved.

Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/III flux ratios are grown on GaAs (001) substrates by molecular beam epitaxy (XIBE). The samples are analysed by using atomic force microscopy (AFM), Hall measurement, and low temperature photoluminescence (PL). The optimum V/III ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square (RMS) roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm(2)/(V.s) and 3.26 x 10(12)cm(-2) respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47 As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the V/III ratio, for which the reasons are discussed.

Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy

Effect of rapid thermal annealing on photoluminescence (PL) properties of InGaAs, InGaNAs, InGaAsSb, and InGaNAsSb quantum wells (QWs) grown by molecular-beam epitaxy was systematically investigated. Variations of PL intensity and full width at half maximum were recorded from the samples annealed at different conditions. The PL peak intensities of InGaAs and InGaNAs QWs initially increase and then decrease when the annealing temperature increased from 600 to 900 degrees C, but the drawing lines of InGaAsSb and InGaNAsSb take on an "M" shape. The enhancement of the PL intensity and the decrease of the full width at half maximum in our samples are likely due to the removal of defects and dislocations as well as the composition's homogenization. In the 800-900 degrees C high-temperature region, interdiffusion is likely the main factor influencing the PL intensity. In-N is easily formed during annealing which will prevent In out diffusion, so the largest blueshift was observed in InGaAsSb in the high-temperature region. (c) 2006 American Institute of Physics.