Multibeam and seismic survey, physical oceanography, and sea-bottom videos from the Bay of Biscay

We report the northernmost and deepest known occurrence of deep-water pycnodontine oysters, based on two surveys along the French Atlantic continental margin to the La Chapelle continental slope (2006) and the Guilvinec Canyon (2008). The combined use of multibeam bathymetry, seismic profiling, CTD casts and a remotely operated vehicle (ROV) made it possible to describe the physical habitat and to assess the oceanographic control for the recently described species Neopycnodonte zibrowii. These oysters have been observed in vivo in depths from 540 to 846 m, colonizing overhanging banks or escarpments protruding from steep canyon flanks. Especially in the Bay of Biscay, such physical habitats may only be observed within canyons, where they are created by both long-term turbiditic and contouritic processes. Frequent observations of sand ripples on the seabed indicate the presence of a steady, but enhanced bottom current of about 40 cm/s. The occurrence of oysters also coincides with the interface between the Eastern North Atlantic Water and the Mediterranean Outflow Water. A combination of this water mass mixing, internal tide generation and a strong primary surface productivity may generate an enhanced nutrient flux, which is funnelled through the canyon. When the ideal environmental conditions are met, up to 100 individuals per m² may be observed. These deep-water oysters require a vertical habitat, which is often incompatible with the requirements of other sessile organisms, and are only sparsely distributed along the continental margins. The discovery of these giant oyster banks illustrates the rich biodiversity of deep-sea canyons and their underestimation as true ecosystem hotspots.

Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition

Abstract: We report the growth and the electron cyclotron resonance measurements of n-type Si/Si0.62Ge0.38 and Si0.94Ge0.06/Si0.62Ge0.38 modulation-doped heterostructures grown by rapid thermal chemical vapor deposition. The strained Si and Si0.94Ge0.06 channels were grown on relaxed Si0.62Ge0.38 buffer layers, which consist of 0.6 mu m uniform Si0.62Ge0.38 layers and 0.5 mu m compositionally graded relaxed SiGe layers from 0 to 38% Ge. The buffer layers were annealed at 800 degrees C for 1 h to obtain complete relaxation. A 75 Angstrom Si(SiGe) channel with a 100 Angstrom spacer and a 300 Angstrom 2 X 10(19) cm(-3) n-type supply layer was grown on the top of the buffer layers. The cross-sectional transmission electron microscope reveals that the dense dislocation network is confined to the buffer layer, and relatively few dislocations terminate on the surface. The plan-view image indicates the threading dislocation density is about 4 X 10(6) cm(-2). The far-infrared measurements of electron cyclotron resonance were performed at 4 K with the magnetic field of 4-8 T. The effective masses determined from the slope of the center frequency of the absorption peak versus applied magnetic field plot are 0.203m(0) and 0.193m(0) for the two dimensional electron gases in the Si and Si0.94Ge0.06 channels, respectively. The Si effective mass is very close to that of a two dimensional electron gas in an Si MOSFET (0.198m(0)). The electron effective mass of Si0.94Ge0.06 is reported for the first time and is about 5% lower than that of pure Si.

Tombstone of Jeanette Molling nee Benjamin; Strangriede Cemetery (R 26.06); Hannover Cemeteries Tombs

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Tombstone of Jeanette Molling nee Benjamin; Strangriede Cemetery (R 26.06); Hannover Cemeteries Tombs

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Structure of pentacyclo[7.4.2.02,6.06,15.011,14]pentadec-4-ene-7,13-dione, a novel pentacyclic C15 quinane system

C 15H 1602 (a synthetic precursor to dodecahedrane), monoclinic, P21/n, a = 12.171 (5), b = 6.976(5), c = 13.868 (3) A, B = 102.56 (3) ° , Z = 4, D m = 1.30, D c = 1.318 g cm -3, F(000) = 488, g(Mo K¢t) = 0.92 cm- 1. Intensity data were collected on a Nonius CAD-4 diffractometer and the structure was solved by direct methods. Full-matrix least-squares refinement gave R = 0.077 (R w = 0.076) for 1337 observed reflections. All the five-membered rings are cis fused and have envelope (C s symmetry) conformations.

Electron Cyclotron Resonance in Strained Si and Si0.94Ge0.06 Channels on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition

We report the far-infrared measurements of the electron cyclotron resonance absorption in n-type Si/Si0. 62Ge0.38 and Si0.94Ge0.06 /Si0. 62Ge0.38 modulation- doped heterostructures grown by rapid thermal chemical vapor deposition. The strained Si and Si0.94Ge0.06 channels were grown on relaxed Si0.62Ge0.38 buffer layers, which consist of 0.6 μm uniform Si0.62Ge0.38 layers and 0.5 μm compositionally graded relaxed SiGe layers from 0% Ge to 38 % Ge. The buffer layers were annealed at 800 °C for 1 hr to obtain complete relaxation. The samples had 100 Å spacers and 300 Å 2×1019 cm-3 n-type supply layers on the tops of the 75 Å channels. The far-infrared measurements of electron cyclotron resonance were performed at 4K with the magnetic field of 4 – 8 Tesla. The effective masses determined from the slope of center frequency of absorption peak vs applied magnetic field plot are 0.20 mo and 0.19 mo for the two dimensional electron gases in the Si and Si0.94Ge0.06 channels, respectively. The Si effective mass is very close to that of two dimensional electron gas in Si MOSFET (0.198mo). The electron effective mass of Si0.94Ge0.06 is reported for the first time and about 5 % lower than that of pure Si.