Numerical comparison between conventional dispersion compensating fibers and photonic crystal fibers as lumped Raman amplifiers

In this paper we discuss the use of photonic crystal fibers (PCFs) as discrete devices for simultaneous wideband dispersion compensation and Raman amplification. The performance of the PCFs in terms of gain, ripple, optical signal-to-noise ratio (OSNR) and required fiber length for complete dispersion compensation is compared with conventional dispersion compensating fibers (DCFs). The main goal is to determine the minimum PCF loss beyond which its performance surpasses a state-of-the-art DCF and justifies practical use in telecommunication systems. (C) 2009 Optical Society of America

Design methodology for multi-pumped discrete Raman amplifiers: case-study employing photonic crystal fibers

This paper proposes a new design methodology for discrete multi-pumped Raman amplifier. In a multi-objective optimization scenario, in a first step the whole solution-space is inspected by a CW analytical formulation. Then, the most promising solutions are fully investigated by a rigorous numerical treatment and the Raman amplification performance is thus determined by the combination of analytical and numerical approaches. As an application of our methodology we designed an photonic crystal fiber Raman amplifier configuration which provides low ripple, high gain, clear eye opening and a low power penalty. The amplifier configuration also enables to fully compensate the dispersion introduced by a 70-km singlemode fiber in a 10 Gbit/s system. We have successfully obtained a configuration with 8.5 dB average gain over the C-band and 0.71 dB ripple with almost zero eye-penalty using only two pump lasers with relatively low pump power. (C) 2009 Optical Society of America

Novel solitons in parametric amplifiers and atom lasers

We review recent developments in quantum and classical soliton theory, leading to the possibility of observing both classical and quantum parametric solitons in higher-dimensional environments. In particular, we consider the theory of three bosonic fields interacting via both parametric (cubic) and quartic couplings. In the case of photonic fields in a nonlinear optical medium this corresponds to the process of sum frequency generation (via chi((2)) nonlinearity) modified by the chi((3)) nonlinearity. Potential applications include an ultrafast photonic AND-gate. The simplest quantum solitons or energy eigenstates (bound-state solutions) of the interacting field Hamiltonian are obtained exactly in three space dimensions. They have a point-like structure-even though the corresponding classical theory is nonsingular. We show that the solutions can be regularized with the imposition of a momentum cut-off on the nonlinear couplings. The case of three-dimensional matter-wave solitons in coupled atomic/molecular Bose-Einstein condensates is discussed.

Transmit array of transistor amplifiers illuminated by a patch array in the reactive near-field region

In this paper, a small transmit array of transistor amplifiers illuminated by a passive array of microstrip patches in the reactive near-field region is investigated as a power-combining structure. The two cases considered are when the transmit array radiates in a free space and when a passive array similar to the one used for illumination collects the radiated power. A comparison of the performance of the proposed structure against the alternative one, which uses a conventional horn antenna as a power-launching/receiving device, is also presented.

Low-power 6-bit 1-GS/s two-channel pipeline ADC with open-loop amplification using amplifiers with local-feedback

IEEE International Symposium on Circuits and Systems, pp. 2258 – 2261, Seattle, EUA

Optimization of multi-stage amplifiers in deep-submicron CMOS using a distributed/parallel genetic algorithm

IEEE International Symposium on Circuits and Systems, pp. 724 – 727, Seattle, EUA

Time-domain optimization of amplifiers based on distributed genetic algorithms

Thesis presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the subject of Electrical and Computer Engineering

Design of switched-capacitor filters using low gain amplifiers

Dissertação para obtenção do Grau de Mestre em Engenharia Electrotécnica e de Computadores

Design of a Continuous-Time (CT) Sigma-Delta modulator for class D audio power amplifiers

Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para obtenção do Grau de Mestre em Engenharia Electrotécnica e de Computadores

Wideband CMOS low noise amplifiers

Modern fully integrated receiver architectures, require inductorless circuits to achieve their potential low area, low cost, and low power. The low noise amplifier (LNA), which is a key block in such receivers, is investigated in this thesis. LNAs can be either narrowband or wideband. Narrowband LNAs use inductors and have very low noise figure, but they occupy a large area and require a technology with RF options to obtain inductors with high Q. Recently, wideband LNAs with noise and distortion cancelling, with passive loads have been proposed, which can have low NF, but have high power consumption. In this thesis the main goal is to obtain a very low area, low power, and low-cost wideband LNA. First, it is investigated a balun LNA with noise and distortion cancelling with active loads to boost the gain and reduce the noise figure (NF). The circuit is based on a conventional balun LNA with noise and distortion cancellation, using the combination of a common-gate (CG) stage and common-source (CS) stage. Simulation and measurements results, with a 130 nm CMOS technology, show that the gain is enhanced by about 3 dB and the NF is reduced by at least 0.5 dB, with a negligible impact on the circuit linearity (IIP3 is about 0 dBm). The total power dissipation is only 4.8 mW, and the active area is less than 50 x 50 m2 . It is also investigated a balun LNA in which the gain is boosted by using a double feedback structure.We propose to replace the load resistors by active loads, which can be used to implement local feedback loops (in the CG and CS stages). This will boost the gain and reduce the noise figure (NF). Simulation results, with the same 130 nm CMOS technology as above, show that the gain is 24 dB and NF is less than 2.7 dB. The total power dissipation is only 5.4 mW (since no extra blocks are required), leading to a figure-of-merit (FoM) of 3.8 mW

A Wiener model for memory high power amplifiers using B-spline function approximation

In this paper we introduce a new Wiener system modeling approach for memory high power amplifiers in communication systems using observational input/output data. By assuming that the nonlinearity in the Wiener model is mainly dependent on the input signal amplitude, the complex valued nonlinear static function is represented by two real valued B-spline curves, one for the amplitude distortion and another for the phase shift, respectively. The Gauss-Newton algorithm is applied for the parameter estimation, which incorporates the De Boor algorithm, including both the B-spline curve and the first order derivatives recursion. An illustrative example is utilized to demonstrate the efficacy of the proposed approach.

Tm and Tm-Tb-doped germanate glasses for S-band amplifiers

The mechanism involved in the Tm(3+)((3)F(4)) -> Tb(3+)((7)F(0,1,2)) energy transfer as a function of the Tb concentration was investigated in Tm:Tb-doped germanate (GLKZ) glass. The experimental transfer rate was determined from the best fit of the (3)F(4) luminescence decay due to the Tm -> Tb energy transfer using the Burshtein model. The result showed that the 1700 nm emission from (3)F(4) can be completely quenched by 0.8 mol% of Tb(3+). As a consequence, the (7)F(3) state of Tb(3+) interacts with the (3)H(4) upper excited state of TM(3+) slighting decreasing its population. The effective amplification coefficient beta(cm(-1)) that depends on the population density difference Delta n = n((3)H(4))-n((3)F(4)) involved in the optical transition of Tm(3+) (S-band) was calculated by solving the rate equations of the system for continuous pumping with laser at 792 nm, using the Runge-Kutta numerical method including terms of fourth order. The population density inversion An as a function of Tb(3+) concentration was calculated by computational simulation for three pumping intensities, 0.2, 2.2 and 4.4 kWcm(-2). These calculations were performed using the experimental Tm -> Tb transfer rates and the optical constants of the Tm (0.1 mol%) system. It was demonstrated that 0.2 mol% of Tb(3+) propitiates best population density inversion of Tin(3+) maximizing the amplification coefficient of Tm-doped (0.1 mol%) GLKZ glass when operating as laser intensity amplification at 1.47 mu m. (C) 2007 Elsevier B.V. All rights reserved.

Tm3+ and Tm3+-Ho3+ doped fluorogermanate glasses for S-band amplifiers

Two series of glasses with composition (mol%) 70PbGeO3- 15PbF2-15CdF2, the first one with different Tm 3+ contents (0.2, 0.4, 0.6 and 0.8 mol%) and the second one with 0.2 mol% Tm3+ and different Ho3+ contents (0.1, 0.5, 1.0 and 1.5 mol%), have been prepared and some of their spectroscopic properties studied. Absorption in the visible-near infrared and emission in the near infrared region of the electromagnetic spectrum have been obtained. Concerning emission at the 1.4-1.5 μm region, optimization of rare earth ions content leads to 0.2 and 0.5 mol% for Tm3+ and Ho3+, respectively. We discuss potential application of these compositions. © 2005 Elsevier B.V. All rights reserved.

Effects in the population inversion of3H4 level in Tm, Tm-Tb and Tm-Eu doped germanate glasses for amplifiers applications

The population inversion of the Tm3+ in GLKZ glass involved in the 1470 nm emission (3H4 → 3F 4) as a function of Tb (or Eu) concentration was calculated by computational simulation for a CW laser pumping at 792 nm. These calculations were performed using the experimental Tm→Tb an Tm→Eu transfer rates and the spectroscopic parameters of the Tm (0.1 mol %) system. The result shows that 0.2 mol % (Tb3+) and 0.4 mol % of Eu3+ ions propitiate best population inversion of Tm3+ (0.1 mol %) maximizing the amplification coefficient of germanate (GLKZ) glass when operating as laser intensity amplification at 1470 nm. Besides the effective deactivation of the 3F4 level, the presence of Tb3+ or Eu 3+ ions introduce a depopulation of the 3H4 emitting level by means of a cross relaxation process with Tm3+ ions. In spite of this, the whole effect is verified to be benefic for using Tm-doped GLKZ glass codoped with Tb3+ or Eu3+ as a suitable material for confectioning optical amplifiers that operates in the S-band for telecommunication.