Monitoring of active layer dynamics at two transects on Svalbard using multi-channel ground-penetrating radar

Multi-channel ground-penetrating radar is used to investigate the late-summer evolution of the thaw depth and the average soil water content of the thawed active layer at a high-arctic continuous permafrost site on Svalbard, Norway. Between mid of August and mid of September 2008, five surveys have been conducted over transect lengths of 130 and 175 m each. The maximum thaw depths range from 1.6 m to 2.0 m, so that they are among the deepest thaw depths recorded for Svalbard so far. The thaw depths increase by approximately 0.2 m between mid of August and beginning of September and subsequently remain constant until mid of September. The thaw rates are approximately constant over the entire length of the transects within the measurement accuracy of about 5 to 10 cm. The average volumetric soil water content of the thawed soil varies between 0.18 and 0.27 along the investigated transects. While the measurements do not show significant changes in soil water content over the first four weeks of the study, strong precipitation causes an increase in average soil water content of up to 0.04 during the last week. These values are in good agreement with evapotranspiration and precipitation rates measured in the vicinity of the the study site. While we cannot provide conclusive reasons for the detected spatial variability of the thaw depth at the study site, our measurements show that thaw depth and average soil water content are not directly correlated. The study demonstrates the potential of multi-channel ground-penetrating radar for mapping thaw depth in permafrost areas. The novel non-invasive technique is particularly useful when the thaw depth exceeds 1.5 m, so that it is hardly accessible by manual probing. In addition, multi-channel ground-penetrating radar holds potential for mapping the latent heat content of the active layer and for estimating weekly to monthly averages of the ground heat flux during the thaw period.

Permafrost cores and active layer pits on Herschel Island: core attributes

Twelve permafrost cores and active layer pits were drilled/dug on Herschel Island in order to estimate the soil organic carbon and total nitrogen contents in the first 30, 100 and 200 cm of ground. The data are the core information obtained during sampling.

Permafrost cores and active layer pits on Herschel Island: link to shape files

Twelve permafrost cores and active layer pits were drilled/dug on Herschel Island in order to estimate the soil organic carbon and total nitrogen contents in the first 30, 100 and 200 cm of ground. The data are shapefile points with attribute table, which contains different core information.

Pulsed laser deposition film of a donor-acceptor-donor polymer as possible active layer in devices

A molecule having a ketone group between two thiophene groups was synthesized. Presence of alternating electron donating and accepting moieties gives this material a donor-acceptor-donor (DAD) architecture. PolyDAD was synthesized from DAD monomer by oxidative polymerization. Device quality films of polyDAD were fabricated using pulsed laser deposition technique. X-ray photoelectron spectroscopy (XPS) and fourier transform infrared spectra (FTIR) data of both as synthesized and film indicate the material does not degrade during ablation. Optical band gap was determined to be about 1.45 eV. Four orders of magnitude increase in conductivity was observed from as synthesized to pulsed laser deposition (PLD) fabricated film of polyDAD. Annealing of polyDAD films increase conductivity, indicating better ordering of the molecules upon heating. Rectifying devices were fabricated from polyDAD, and preliminary results are discussed.

A selective area growth double stack active layer electroabsorption modulator integrated with a distributed feedback laser

A new method for fabricating electroabsorption modulator integrated with a distributed feedback laser (EML) was proposed. With the method we fabricated a selective area growth double stack active layer EML (SAG-DSAL-EML). Through comparing with other fabrication methods of EMLs, the characters and the merits of the new method presented in this paper were discussed.

Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer

The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed. (C) 1996 American Institute of Physics.

Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach

Monolithic electro-absorption modulated distributed-feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0.5V to 3.0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1.5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.

Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies

This paper reports the fabrication of SSOI (Silicon on Silicide On Insulator) substrates with active silicon regions only 0.5mum thick, incorporating LPCVD low resistivity tungsten silicide (WSix) as the buried layer. The substrates were produced using ion splitting and two stages of wafer bonding. Scanning acoustic microscope imaging confirmed that the bond interfaces are essentially void-free. These SSOI wafers are designed to be employed as substrates for mm-wave reflect-array diodes, and the required selective etch technology is described together with details of a suitable device.