19 resultados para A159


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Abrasive wear is likely to occur whenever a hard asperity or a trapped hard particle is dragged across a softer surface, and it has been estimated that this form of wear contributes to as many as half of the wear problems that are met in industry. Such damaging hard particles may be external contaminants, products of corrosion or even the debris from previous wear events. During the life of a component, damage caused by individual asperity or particle interactions builds up and, at each stage of its life, the worn surface is the result of many such superimposed wear events. The practical, quantitative prediction of wear rates depends on having both a satisfactory understanding of individual interactions and a suitable procedure for combining these when subsequent contacts are made on a surface whose topography and material properties may have been much changed Irom their initial states. The paper includes some details of an analytical model for the interaction of a representative asperity and the worn surface which can both predict the frictional force and the balance between ploughing, when material is displaced but not lost from the surface, and micromachining or cutting, when actual detachment occurs. Experiments tö !rvvéSuQ8Î8 the validity of the model have been carried out on a novel wear rig which provides very precise control over the position of the asperity and the counterface. This facility, together with that of on-board profilometry, means that it is possible to carry out wear experiments on areas of the surface whose previous deformation history is well known; in this way it is possible to follow the development of a worn surface in a controlled manner as the damage from individual wear events accumulates. Experimental data on the development of such a surface, produced by repeated parallel abrasion, are compared with the predictions of the model. © 1992 IOP Publishing Ltd.

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This study presents the design of a thin electromagnetic absorber which exhibits radar backscatter suppression that is independent of the wave polarisation at large incidence angles. The structure consists of a metal backed printed frequency selective surface (FSS), with resistors placed across narrow gaps inserted in the middle of each of the four sides of the conductor loops. The geometry of the periodic array and the value of the vertical and horizontal resistor pairs are carefully chosen to present a real impedance of 377 Ω at the centre operating frequency for both TE and TM polarised waves. Angular sensitivity and reflectivity bandwidth have been investigated for FSS absorber designs with thicknesses of 1, 2 and 3 mm. Each of the three structures was optimised to work at a centre frequency of 10 GHz and an incident angle of 45°. The design methodology is verified by measuring the radar backscatter suppression from a 3 mm (l / 10) thick screen in the frequency range 8–12 GHz. The absorber construction was simplified by filling the four metal gaps in each unit cell with shielding paint, and selecting the ink thickness to give the two required surface resistance values.

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The efficient electrocatalysts for many heterogeneous catalytic processes in energy conversion and storage systems must possess necessary surface active sites. Here we identify, from X-ray photoelectron spectroscopy and density functional theory calculations, that controlling charge density redistribution via the atomic-scale incorporation of heteroatoms is paramount to import surface active sites. We engineer the deterministic nitrogen atoms inserting the bulk material to preferentially expose active sites to turn the inactive material into a sufficient electrocatalyst. The excellent electrocatalytic activity of N-In2O3 nanocrystals leads to higher performance of dye-sensitized solar cells (DSCs) than the DSCs fabricated with Pt. The successful strategy provides the rational design of transforming abundant materials into high-efficient electrocatalysts. More importantly, the exciting discovery of turning the commonly used transparent conductive oxide (TCO) in DSCs into counter electrode material means that except for decreasing the cost, the device structure and processing techniques of DSCs can be simplified in future.

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