A criação dos novos Estados do Araguaia e Mato Grosso do Norte : PDC nº 850, de 2001

Estuda as características populacionais, territoriais e socioeconômicas dos futuros Estados de Mato Grosso do Norte e do Araguaia, em conformidade com o proposto pelo Projeto de Decreto Legislativo nº 850, de 2001, de autoria do Senador Mozarildo Cavalcanti, que convoca plebiscito sobre a criação do Estado do Araguaia.

32 Gb/s multilevel modulation of an 850 nm VCSEL for next-generation datacommunication standards

An 850 nm vertical-cavity surface-emitting laser is modulated at 32 Gb/s using pulse-amplitude modulation with four levels. Transmitter predistortion generates an optimized modulation waveform, which requires a receiver bandwidth of only 15 GHz. © 2011 OSA.

28 Gb/s unequalized PAM3 modulation of an 850 nm VCSEL for next-generation datacommunication links

An 850 nm vertical-cavity surface-emitting laser is modulated at 28 Gb/s using pulseamplitude modulation with three levels. Unequalized transmission over 100 m of OM3 MMF is demonstrated, with advantages over NRZ and PAM4 modulation. © 2012 OSA.

28 Gb/s unequalized PAM3 modulation of an 850 nm VCSEL for next-generation datacommunication links

An 850 nm vertical-cavity surface-emitting laser is modulated at 28 Gb/s using pulseamplitude modulation with three levels. Unequalized transmission over 100 m of OM3 MMF is demonstrated, with advantages over NRZ and PAM4 modulation. © OSA 2012.

32 Gb/s multilevel modulation of an 850 nm VCSEL for next-generation datacommunication standards

An 850 nm vertical-cavity surface-emitting laser is modulated at 32 Gb/s using pulseamplitude modulation with four levels. Transmitter predistortion generates an optimized modulation waveform, which requires a receiver bandwidth of only 15 GHz. © OSA/ CLEO 2011.

A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) was designed and fabricated with standard 0.6 mu m CMOS technology. This OEIC circuit consisted of an integrated double photodiode detector (DPD) and a preamplifier. The DPD detector exhibited high bandwidth by screening the bulk-generated diffusion carriers and suppressing the slow diffusion tail effect. The preamplifier exploited the regulated cascode (RGC) configuration as the input stage of receiver, thus isolating the influence of photodiode capacitance and input parasitic capacitance on bandwidth. Testing results showed that the bandwidth of OEIC was 700MHz, indicating the bit rate of 1Gb/s was achieved.

钨丝掩模二次倾斜离子注入850 nm室温连续垂直腔面发射激光器

采用钨丝做掩模,进行倾斜的离子注入优化电流限制区,制作出室温连续的垂直腔面发射激光器件.该器件的最低阈值电流为1.4 mA,串联电阻约207 Ω, 输出光功率超过1 mW.

Tephra-linked peat humification records from Irish ombrotrophic bogs question nature of solar forcing at 850 cal. yr BC.

This paper investigates evidence for palaeoclimatic changes during the period ca. 1500-500 cal. yr BC through peat humification studies on seven Irish ombrotrophic bogs. The sites are well-correlated by the identification of three mid-first millennium BC tephras, which enable the humification records at specific points in time to be directly compared. Phases of temporarily increased wetness are suggested at ca. 1300-1250 cal. yr BC, ca. 1150-1050 cal. yr BC, ca. 940 cal. yr BC and ca. 740 cal. yr BC. The last of these is confirmed to be synchronous at five sites, suggesting external forcing on a regional scale. The timing of this wet-shift is constrained by two closely dated tephras and is demonstrated to be distinct from the widely reported changes to cooler/wetter conditions associated with a solar minimum at 850-760 cal. yr BC, at which time the Irish sites appear instead to experience drier conditions. The results suggest the possibility of either non-uniform responses to solar forcing in northwest Europe at this time, or the existence of unrelated climate events in the early first millennium BC. The findings caution against the correlation of loosely dated palaeoclimate data if the effects of forcing mechanisms are to be understood.

'Maimónides en el 850 aniversario de su nacimiento'.

Título anterior de la publicación : Boletín de la Comisión Española de la UNESCO