Delocalization-localization transition of plasmons in random (GaAs)(m)(Al(0.3)Ga(0.7)As)(6) superlattices

The transition of plasmons from propagating to localized state was studied in disordered systems formed in GaAs/AlGaAs superlattices by impurities and by artificial random potential. Both the localization length and the linewidth of plasmons were measured by Raman scattering. The vanishing dependence of the plasmon linewidth on the disorder strength was shown to be a manifestation of the strong plasmon localization. The theoretical approach based on representation of the plasmon wave function in a Gaussian form well accounted for by the obtained experimental data.

Acreage Living, June 2001, Vol.7, no.6

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Iowa Community Empowerment Newsletter, December 2006, Vol. 7, no. 6

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Customer Focus Newsletter, November-December, 2010, Vol. 7, no.6

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ABD News, June 2007, Vol. 7, no. 6

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Agri-News, April 10, 2007, Vol. 7, no. 6

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Ag Decision Maker, April 2003, Vol. 7, no. 6

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