Diário da Constituinte [gravação de vídeo] : [programa n. 553]

A Constituinte começa a votar hoje o último capítulo da Ordem Econômica, o sistema financeiro. Em seguida, deverá ser votado sobre a ordem social. No capítulo que trata da Educação, está quase acertada uma fusão de emendas. A fusão vai garantir: Verbas públicas vão prioritariamente para escolas públicas, autonomia para as Universidades e garante ainda os percentuais de 18% dos impostos da União e 25% dos Estados e Municípios para a Educação. A Reforma Agrária foi votada e o Centrão conseguiu votar uma emenda em separado que assegura que a propriedade produtiva não seja desapropriada. Alguns constituintes reclamam da validade da emenda.

Histochemical investigations on the interrenal system of the brook lamprey (Lapetra planeri Bloch). [Translation from: Acta biol.med.germ. 24, 553-554, 1970. ]

Histochemical experiments are conducted in order to study the interrenal cells of European brook lamprey (Lampetra planeri).

Exciton localization in In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B-oriented GaAs substrate

Using time-resolved photoluminescence (PL) measurements, we have studied the exciton localization effect in InGaAs/GaAs quantum wire (QWR) structures formed in corrugated narrow InGaAs/GaAs quantum wells (QWs) grown on (553)B GaAs substrate. The PL decay time in the QWR structure was found to be independent of the temperature for T < 70 K, showing a typical dynamical behavior of the localized excitons. This result is in striking contrast to the corresponding quantum well structures, where a linear increase of the PL decay time was observed. In addition, an increase of the exciton lifetime was observed at low temperature for the QWR structure as compared to a reference InGaAs/GaAs quantum well sample (1200 vs 400 ps). The observed longer decay time was attributed to the reduction in the spatial coherence of excitons in the QWR-like structure. In PL measurements, a significant polarization anisotropy was also found in our narrow InGaAs/GaAs QWs grown on (553)B GaAs. (C) 2001 American Institute of Physics.

Informe del Grupo Especial de Trabajo Establecido en Virtud de la Resolución 553(XXVI)

Incluye Bibliografía

Report of the Ad Hoc Working Group Established Pursuant to Resolution 553(XXVI)

Includes bibliography