Lattice damage produced in GaN by swift heavy ions

Wurtzite GaN epilayers bombarded at 300 K with 200 MeV Au-197(16+) ions are studied by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C). Results reveal the formation of near-continuous tracks propagating throughout the entire similar to1.5-mum-thick GaN film. These tracks, similar to100 Angstrom in diameter, exhibit a large degree of structural disordering but do not appear to be amorphous. Throughout the bombarded epilayer, high-resolution TEM reveals planar defects which are parallel to the basal plane of the GaN film. The gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to similar to10(13) cm(-2). For larger fluences, delamination of the nitride film from the sapphire substrate occurs. Based on these results, physical mechanisms of the formation of lattice disorder in GaN in such a high electronic stopping power regime are discussed. (C) 2004 American Institute of Physics.

Production of ultracollimated bunches of multi-MeV electrons by 35 fs laser pulses propagating in exploding-foil plasmas

Very collimated bunches of high energy electrons have been produced by focusing super-intense femtosecond laser pulses in submillimeter under-dense plasmas. The density of the plasma, preformed with the laser exploding-foil technique, was mapped using Nomarski interferometry. The electron beam was fully characterized: up to 10(9) electrons per shot were accelerated, most of which in a beam of aperture below 10(-3) sterad, with energies up to 40 MeV. These measurements, which are well modeled by three-dimensional numerical simulations, validate a reliable method to generate ultrashort and ultracollimated electron bunches. (C) 2002 American Institute of Physics.

Properties of iron related quenched-in levels in p-silicon

The electrical and optical properties of the thermally induced quenched-in levels in p-silicon which have heen attributed to iron are studied. The two levels, HI and H2, are located at Ev + 0.42 eV and Ev + 0.52 eV, respectively, as determined by TSCAP, DLTS, and transient photocapacitance methods. The photoionization cross sections are well described by Lucovsky's model. The hole capture by H1 is temperature dependent; a barrier of 40 meV is measured. However, multiphonon emission mechanism cannot be invoked to explain this temperature dependence due to the inferred zero lattice relaxation. The source of iron contamination is found to be the ambient conditions, in particular the quartz tube. The conflicting reports regarding the stability and the variation in the reported capture cross section values suggests that the observed Ev + 0.4 eV level must be a complex centre. The inferred near zero lattice relaxation during the electron transition implies weak coupling to the host lattice.

Growth and characterization of novel, III-V semiconductor heterostructures

The material presented in this thesis concerns the growth and characterization of III-V semiconductor heterostructures. Studies of the interactions between bound states in coupled quantum wells and between well and barrier bound states in AlAs/GaAs heterostructures are presented. We also demonstrate the broad array of novel tunnel structures realizable in the InAs/GaSb/AlSb material system. Because of the unique broken-gap band alignment of InAs/GaSb these structures involve transport between the conduction- and valence-bands of adjacent layers. These devices possess a wide range of electrical properties and are fundamentally different from conventional AlAs/GaAs tunnel devices. We report on the fabrication of a novel tunnel transistor with the largest reported room temperature current gains. We also present time-resolved studies of the growth fronts of InAs/GainSb strained layer superlattices and investigations of surface anion exchange reactions.

Chapter 2 covers tunneling studies of conventional AlAs/GaAs RTD's. The results of two studies are presented: (i) A test of coherent vs. sequential tunneling in triple barrier heterostructures, (ii) An optical measurement of the effect of barrier X-point states on Γ-point well states. In the first it was found if two quantum wells are separated by a sufficiently thin barrier, then the eigenstates of the system extend coherently across both wells and the central barriers. For thicker barriers between the wells, the electrons become localized in the individual wells and transport is best described by the electrons hopping between the wells. In the second, it was found that Γ-point well states and X-point barrier states interact strongly. The barrier X-point states modify the energies of the well states and increase the escape rate for carriers in the quantum well.

The results of several experimental studies of a novel class of tunnel devices realized in the InAs/GaSb/AlSb material system are presented in Chapter 3. These interband tunnel structures involve transport between conduction- and valence-band states in adjacent material layers. These devices are compared and contrasted with the conventional AlAs/GaAs structures discussed in Chapter 2 and experimental results are presented for both resonant and nonresonant devices. These results are compared with theoretical simulations and necessary extensions to the theoretical models are discussed.

In chapter 4 experimental results from a novel tunnel transistor are reported. The measured current gains in this transistor exceed 100 at room temperature. This is the highest reported gain at room temperature for any tunnel transistor. The device is analyzed and the current conduction and gain mechanisms are discussed.

Chapters 5 and 6 are studies of the growth of structures involving layers with different anions. Chapter 5 covers the growth of InAs/GainSb superlattices for far infrared detectors and time resolved, in-situ studies of their growth fronts. It was found that the bandgap of superlattices with identical layer thicknesses and compositions varied by as much as 40 meV depending on how their internal interfaces are formed. The absorption lengths in superlattices with identical bandgaps but whose interfaces were formed in different ways varied by as much as a factor of two. First the superlattice is discussed including an explanation of the device and the complications involved in its growth. The experimental technique of reflection high energy electron diffraction (RHEED) is reviewed, and the results of RHEED studies of the growth of these complicated structures are presented. The development of a time resolved, in-situ characterization of the internal interfaces of these superlattices is described. Chapter 6 describes the result of a detailed study of some of the phenomena described in chapter 5. X-ray photoelectron spectroscopy (XPS) studies of anion exchange reactions on the growth fronts of these superlattices are reported. Concurrent RHEED studies of the same physical systems studied with XPS are presented. Using the RHEED and XPS results, a real-time, indirect measurement of surface exchange reactions was developed.

Magnetospheric access of solar particles and the configuration of the distant geomagnetic field

The access of 1.2-40 MeV protons and 0.4-1.0 MeV electrons from interplanetary space to the polar cap regions has been investigated with an experiment on board a low altitude, polar orbiting satellite (OG0-4).

A total of 333 quiet time observations of the electron polar cap boundary give a mapping of the boundary between open and closed geomagnetic field lines which is an order of magnitude more comprehensive than previously available.

Persistent features (north/south asymmetries) in the polar cap proton flux, which are established as normal during solar proton events, are shown to be associated with different flux levels on open geomagnetic field lines than on closed field lines. The pole in which these persistent features are observed is strongly correlated to the sector structure of the interplanetary magnetic field and uncorrelated to the north/south component of this field. The features were observed in the north (south) pole during a negative (positive) sector 91% of the time, while the solar field had a southward component only 54% of the time. In addition, changes in the north/south component have no observable effect on the persistent features.

Observations of events associated with co-rotating regions of enhanced proton flux in interplanetary space are used to establish the characteristics of the 1.2 - 40 MeV proton access windows: the access window for low polar latitudes is near the earth, that for one high polar latitude region is ~250 R_⊕ behind the earth, while that for the other high polar latitude region is ~1750 R_⊕ behind the earth. All of the access windows are of approximately the same extent (~120 R_⊕). The following phenomena contribute to persistent polar cap features: limited interplanetary regions of enhanced flux propagating past the earth, radial gradients in the interplanetary flux, and anisotropies in the interplanetary flux.

These results are compared to the particle access predictions of the distant geomagnetic tail configurations proposed by Michel and Dessler, Dungey, and Frank. The data are consistent with neither the model of Michel and Dessler nor that of Dungey. The model of Frank can yield a consistent access window configuration provided the following constraints are satisfied: the merging rate for open field lines at one polar neutral point must be ~5 times that at the other polar neutral point, related to the solar magnetic field configuration in a consistent fashion, the migration time for open field lines to move across the polar cap region must be the same in both poles, and the open field line merging rate at one of the polar neutral points must be at least as large as that required for almost all the open field lines to have merged in 0 (one hour). The possibility of satisfying these constraints is investigated in some detail.

The role played by interplanetary anisotropies in the observation of persistent polar cap features is discussed. Special emphasis is given to the problem of non-adiabatic particle entry through regions where the magnetic field is changing direction. The degree to which such particle entry can be assumed to be nearly adiabatic is related to the particle rigidity, the angle through which the field turns, and the rate at which the field changes direction; this relationship is established for the case of polar cap observations.

Pressure behavior of the alloy band edge and nitrogen-related centers in GaAs0.999N0.001

The photoluminescence of a GaAsN alloy with 0.1% nitrogen has been studied under pressures up to 8.5 GPa at 33, 70, and 130 K. At ambient pressure, emissions from both the GaAsN alloy conduction band edge and discrete nitrogen-related bound states are observed. Under applied pressure, these two types of emissions shift with rather different pressure coefficients: about 40 meV/GPa for the nitrogen-related features, and about 80 meV/GPa for the alloy band-edge emission. Beyond 1 GPa, these discrete nitrogen-related peaks broaden and evolve into a broad band. Three new photoluminescence bands emerge on the high-energy side of the broad band, when the pressure is above 2.5, 4.5, and 5.25 GPa, respectively, at 33 K. In view of their relative energy positions and pressure behavior, we have attributed these new emissions to the nitrogen-pair states NN3 and NN4, and the isolated nitrogen state N-x. In addition, we have attributed the high-energy component of the broad band formed above 1 GPa to resonant or near-resonant NN1 and NN2, and its main body to deeper cluster centers involving more than two nitrogen atoms. This study reveals the persistence of all the paired and isolated nitrogen-related impurity states, previously observed only in the dilute doping limit, into a rather high doping level. Additionally, we find that the responses of different N-related states to varying N-doping levels differ significantly and in a nontrivial manner.

Subband separation energy dependence of intersubband relaxation time in wide quantum wells

Subband separation energy dependence of intersubband relaxation time in a wide quantum well (250 Angstrom) was studied by steady-state and time-resolved photoluminescence. By applying a perpendicular electrical field, the subband separation energy in the quantum well is continuously tuned from 21 to 40 meV. As a result, it is found that the intersubband relaxation time undergoes a drastic change from several hundred picoseconds to subpicoseconds. It is also found that the intersubband relaxation has already become very fast before the energy separation really reaches one optical phonon energy. (C) 1997 American Institute of Physics.

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Recent experimental works devoted to the phenomena of mixing observed at metallic multilayers Ni/Si irradiated by swift heavy ions irradiations make it necessary to revisit the insensibility of crystalline Si under huge electronic excitations. Knowing that Ni is an insensitive material, such observed mixing would exist only if Si is a sensitive material. In order to extend the study of swift heavy ion effects to semiconductor materials, the experimental results obtained in bulk silicon have been analyzed within the framework of the inelastic thermal spike model. Provided the quenching of a boiling ( or vapor) phase is taken as the criterion of amorphization, the calculations with an electron-phonon coupling constant g(300 K) = 1.8 x 10(12) W/cm(3)/K and an electronic diffusivity D-e(300 K) = 80 cm(2)/s nicely reproduce the size of observed amorphous tracks as well as the electronic energy loss threshold value for their creation, assuming that they result from the quenching of the appearance of a boiling phase along the ion path. Using these parameters for Si in the case of a Ni/Si multilayer, the mixing observed experimentally can be well simulated by the inelastic thermal spike model extended to multilayers, assuming that this occurs in the molten phase created at the Ni interface by energy transfer from Si. (C) 2009 Elsevier B. V. All rights reserved.

Observation of pi(+)pi(-)pi(+)pi(-) photoproduction in ultraperipheral heavy-ion collisions at root s(NN)=200 GeV at the STAR detector

We present a measurement of pi(+)pi(-)pi(+)pi(-) photonuclear production in ultraperipheral Au-Au collisions at root s(NN) = 200 GeV from the STAR experiment. The pi(+)pi(-)pi(+)pi(-) final states are observed at low transverse momentum and are accompanied by mutual nuclear excitation of the beam particles. The strong enhancement of the production cross section at low transverse momentum is consistent with coherent photoproduction. The pi(+)pi(-)pi(+)pi(-) invariant mass spectrum of the coherent events exhibits a broad peak around 1540 +/- 40 MeV/c(2) with a width of 570 +/- 60 MeV/c(2), in agreement with the photoproduction data for the rho(0)(1700). We do not observe a corresponding peak in the pi(+)pi(-) final state and measure an upper limit for the ratio of the branching fractions of the rho(0)(1700) to pi(+)pi(-) and pi(+)pi(-)pi(+)pi(-) of 2.5% at 90% confidence level. The ratio of rho(0)(1700) and rho(0)(770) coherent production cross sections is measured to be 13.4 +/- 0.8(stat.) +/- 4.4(syst.)%.

同中子素核9C、8B、7Be和6Li在中能区与28Si反应总截面的测量

放射性束流(RIB)装置拓广了实验核物理在同位旋(T_z)自由度上从稳定核直到滴线核的广袤空间。通常，位于β-稳定线及其附近的核，N／Z在1－1.5范围变化，其分离能E_s无论对于质子还是中子，总是在6-8 MeV之间；对于远离稳定线的非稳定核，N／Z可在0.5-4范围变化，如~9C的N／Z = 0.5，~(10)He的N／Z = 4，而且分离能E_s是在0-40 MeV之间变化的，开展对这些远离β-稳定线非稳定核性质、结构的研究是目前核物理的前沿之一。核反应总截面σ_R是表征原子核性质特征的一个基本物理量，从实验测得的核反应总截面中可以得到有关核结构和核内核子分布的信息。在由放射性束流所产生奇异核的结构与各种反应机制研究中，反应总截面的测量更是有其特殊的重要性，具有奇异核结构如晕核的一个典型的物理特征就是其反应总截面要比稳定核大得多，Tanihata等人最早就是通过对放射性束流的相互作用截面的测量发现了具有奇异结构的核，即中子晕核。由于反应总截面的测量对探测器的要求不高，而且数据分析过程相对较为简单，因而反应总截面的测量已经成为放射性束核物理的研究的一个非常重要实验手段。中子晕核以及中子皮核的发现促使人们去寻找质子晕核和质子皮核，由于最后一个质子的结合能非常小只有136，keV，并且有较大的电四极矩，因而使得~8B成为质子晕的最大热门候选核，有关~8B是否具有质子晕核结构的问题，许多实验科学家得出了相互矛盾的回答；而目前有关另外一个质子晕候选核~9C的实验数据非常少，目前还没有人从实验上对~9C是否为质子晕核这一问题进行肯定或否定的回答。因此非常有必要测量~9C和~8B的反应总截面。对反应总截面进行研究的一个非常有用理论就是Glauber模型，该模型考虑了库伦效应的多次散射理论。它是一种基于自由核子-核子(N-N)碰撞的与核物质密度相关的理论，因而能够从实验测量到的反应总截面中提取核物质分布的信息。该理论对中低能区的反应总截面描述却有一个缺憾：理论值比实验值都要小。本论文主要描述了利用透射法测量了中能区同中子素核~9C、~8B、~7Be及~6Li与~(28)Si的反应总截面，并介绍了重离子碰撞以及描述重离子性质的几种常用理论。在论文里对实验测量得到的结果进行了理论分析，这些理论包括半经验的Shen公式、Glauber模型、BUU模型以及SHF理论。如果将~9C和~8B当成具有正常核结构来处理，半经验的Shen公式和Glauber模型(HO密度分布)的理论计算值总是比实验值要小得多；对于Glauber模型的理论计算值和实验值的差异，Ozawa等定义了一个差值因子d，方德清等人对轻核系统的d值进行了详细的分析。一般认为，正常核的d值在20％以内，而对于具有晕或皮奇异结构的核，其d值则超过30％，甚至可达50％，因此可根据一个核的d值是否超过30％而且比相邻核的d值明显大这种半经验的方法来判断一个核是否具有奇异结构；利用d值的分析结果，我们认为：~9C和~8B都具有奇异核结构；对于BUU模型用同样的方法引进差值因子d值，对于~9C和~8B有相同的结论。用SHF理论计算得到B和C同位素的密度分布结果显示，~9C和~8B的密度分布比相邻的同位素扩展都要大得多。为减小Glauber模型计算的反应截面与实验值的差别，本论文还对Glauber模型的输入密度形式进行了修改，在原单一HO分布基础上加一个高斯分布的尾巴，并对丰质子的同中子素核~9C、~8B、~7Be及~6Li与~(28)Si靶以及~(12)C和丰中子的C同位素核~(13-16)C与~(12)C靶的反应截面重新进行了计算，结果显示在中能区的计算值比原来单一密度分布的计算结构有明显改善。

用于热核研究的载钆液体闪烁体制备和性能测量及4π中子探测器效率计算

热核研究是具有重大科学意义的课题。在实验方面，大体积液体闪烁探测器是一个很有效的工具。用它可以研究热核的形成，衰变以及反应机制。为了于将来建造这样的探测器，我们试制了一大批载钆液闪样品，并从中选取了光输出较大的两种。实验表明，与其他液闪比较它们具有很高的光透射率和物理、化学稳定性，能量分辨率约为21%。我们还测量了闪烁液的一些光学性质，诸如衰减长度，衰减时间，发射光谱和吸收光谱。最后采用蒙特卡洛方法模拟了大体积液体闪烁体对中子的探测效率，比较子多种形体、载钆量、载钆方式的影响。使用25601的闪烁液，对40 Mev/u Ar+Au反应中蒸发中子的探测效率可望达到78%左右。可以说，建造液闪中子球是切实可行的

重离子与~(nat)W相互作用中Hf的生成研究

用放射化学方法研究了6.3、8.5、11.8、14.7、18.4、24.6、40 MeV/nucleon ~(40)Ar + ~(nat)W、10.5 MeV/nucleon ~(84)Kr + ~(nat)W、80 MeV/nucleon ~(16)O + ~(nat)W、135 MeV/nucleon ~(12)C + ~(nat)W反应中的Hf的生成，得到了Hf同位素的激发函数、反冲性质和同位素分布。研究结果指出利用HIRFL能量的重离子和丰中子靶核作用，能以一定的截面生成A > 170区丰中子新核素。重炮弹更有利于丰中子新核素的生成。使用厚靶，可以明显地提高丰中子新核素的产额。过高的入射能量对丰中子新核素的生成无明显贡献，相反却极大地增加了缺中子同位素产额，这对丰中子新核素的分离和鉴别是非常不利的

Mécanismes de déformation de nanoparticules d’Au par irradiation ionique

Résumé Dans la présente thèse, nous avons étudié la déformation anisotrope par bombardement ionique de nanoparticules d'or intégrées dans une matrice de silice amorphe ou d'arséniure d’aluminium cristallin. On s’est intéressé à la compréhension du mécanisme responsable de cette déformation pour lever toute ambigüité quant à l’explication de ce phénomène et pour avoir une interprétation consistante et unique. Un procédé hybride combinant la pulvérisation et le dépôt chimique en phase vapeur assisté par plasma a été utilisé pour la fabrication de couches nanocomposites Au/SiO2 sur des substrats de silice fondue. Des structures à couches simples et multiples ont été obtenues. Le chauffage pendant ou après le dépôt active l’agglomération des atomes d’Au et par conséquent favorise la croissance des nanoparticules. Les nanocomposites Au/AlAs ont été obtenus par implantation ionique de couches d’AlAs suivie de recuit thermique rapide. Les échantillons des deux nanocomposites refroidis avec de l’azote liquide ont été irradiés avec des faisceaux de Cu, de Si, d’Au ou d’In d’énergie allant de 2 à 40 MeV, aux fluences s'étendant de 1×1013 à 4×1015 ions/cm2, en utilisant le Tandem ou le Tandetron. Les propriétés structurales et morphologiques du nanocomposite Au/SiO2 sont extraites en utilisant des techniques optiques car la fréquence et la largeur de la résonance plasmon de surface dépendent de la forme et de la taille des nanoparticules, de leur concentration et de la distance qui les séparent ainsi que des propriétés diélectriques du matériau dans lequel les particules sont intégrées. La cristallinité de l’arséniure d’aluminium est étudiée par deux techniques: spectroscopie Raman et spectrométrie de rétrodiffusion Rutherford en mode canalisation (RBS/canalisation). La quantité d’Au dans les couches nanocomposites est déduite des résultats RBS. La distribution de taille et l’étude de la transformation de forme des nanoparticules métalliques dans les deux nanocomposites sont déterminées par microscopie électronique en transmission. Les résultats obtenus dans le cadre de ce travail ont fait l’objet de trois articles de revue. La première publication montre la possibilité de manipuler la position spectrale et la largeur de la bande d’absorption des nanoparticules d’or dans les nanocomposites Au/SiO2 en modifiant leur structure (forme, taille et distance entre particules). Les nanoparticules d’Au obtenues sont presque sphériques. La bande d’absorption plasmon de surface (PS) correspondante aux particules distantes est située à 520 nm. Lorsque la distance entre les particules est réduite, l’interaction dipolaire augmente ce qui élargit la bande de PS et la déplace vers le rouge (602 nm). Après irradiation ionique, les nanoparticules sphériques se transforment en ellipsoïdes alignés suivant la direction du faisceau. La bande d’absorption se divise en deux bandes : transversale et longitudinale. La bande correspondante au petit axe (transversale) est décalée vers le bleu et celle correspondante au grand axe (longitudinale) est décalée vers le rouge indiquant l’élongation des particules d’Au dans la direction du faisceau. Le deuxième article est consacré au rôle crucial de la déformation plastique de la matrice et à l’importance de la mobilité des atomes métalliques dans la déformation anisotrope des nanoparticules d’Au dans les nanocomposites Au/SiO2. Nos mesures montrent qu'une valeur seuil de 2 keV/nm (dans le pouvoir d'arrêt électronique) est nécessaire pour la déformation des nanoparticules d'or. Cette valeur est proche de celle requise pour la déformation de la silice. La mobilité des atomes d’Au lors du passage d’ions est confirmée par le calcul de la température dans les traces ioniques. Le troisième papier traite la tentative de formation et de déformation des nanoparticules d’Au dans une matrice d’arséniure d’aluminium cristallin connue pour sa haute résistance à l’amorphisation et à la déformation sous bombardement ionique. Le résultat principal de ce dernier article confirme le rôle essentiel de la matrice. Il s'avère que la déformation anisotrope du matériau environnant est indispensable pour la déformation des nanoparticules d’or. Les résultats expérimentaux mentionnés ci-haut et les calculs de températures dans les traces ioniques nous ont permis de proposer le scénario de déformation anisotrope des nanoparticules d’Au dans le nanocomposite Au/SiO2 suivant: - Chaque ion traversant la silice fait fondre brièvement un cylindre étroit autour de sa trajectoire formant ainsi une trace latente. Ceci a été confirmé par la valeur seuil du pouvoir d’arrêt électronique. - L’effet cumulatif des impacts de plusieurs ions conduit à la croissance anisotrope de la silice qui se contracte dans la direction du faisceau et s’allonge dans la direction perpendiculaire. Le modèle de chevauchement des traces ioniques (overlap en anglais) a été utilisé pour valider ce phénomène. - La déformation de la silice génère des contraintes qui agissent sur les nanoparticules dans les plans perpendiculaires à la trajectoire de l’ion. Afin d’accommoder ces contraintes les nanoparticules d’Au se déforment dans la direction du faisceau. - La déformation de l’or se produit lorsqu’il est traversé par un ion induisant la fusion d’un cylindre autour de sa trajectoire. La mobilité des atomes d’or a été confirmée par le calcul de la température équivalente à l’énergie déposée dans le matériau par les ions incidents. Le scénario ci-haut est compatible avec nos données expérimentales obtenues dans le cas du nanocomposite Au/SiO2. Il est appuyé par le fait que les nanoparticules d’Au ne se déforment pas lorsqu’elles sont intégrées dans l’AlAs résistant à la déformation.

Electronic structure and magnetic interactions of the spin-chain compounds Ca2CuO3 and Sr2CuO3

The results are presented of a combined periodic and cluster model approach to the electronic structure and magnetic interactions in the spin-chain compounds Ca2CuO3 and Sr2CuO3. An extended t-J model is presented that includes in-chain and interchain hopping and magnetic interaction processes with parameters extracted from ab initio calculations. For both compounds, the in-chain magnetic interaction is found to be around -240 meV, larger than in any of the other cuprates reported in the literature. The interchain magnetic coupling is found to be weakly antiferromagnetic, -1 meV. The effective in-chain hopping parameters are estimated to be ~650 meV for both compounds, whereas the value of the interchain hopping parameter is 30 meV for Sr2CuO3 and 40 meV for Ca2CuO3, in line with the larger interchain distance in the former compound. These effective parameters are shown to be consistent with expressions recently suggested for the Néel temperature and the magnetic moments, and with relations that emerge from the t-J model Hamiltonian. Next, we investigate the physical nature of the band gap. Periodic calculations indicate that an interpretation in terms of a charge-transfer insulator is the most appropriate one, in contrast to the suggestion of a covalent correlated insulator recently reported in the literature.

Kinetic energy sum spectra in nonmesonic weak decay of hypernuclei

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)