Dynamical properties of a strongly correlated model for quarter-filled layered organic molecular crystals

The dynamical properties of an extended Hubbard model, which is relevant to quarter-filled layered organic molecular crystals, are analyzed. We have computed the dynamical charge correlation function, spectral density, and optical conductivity using Lanczos diagonalization and large-N techniques. As the ratio of the nearest-neighbor Coulomb repulsion, V, to the hopping integral, t, increases there is a transition from a metallic phase to a charge-ordered phase. Dynamical properties close to the ordering transition are found to differ from the ones expected in a conventional metal. Large-N calculations display an enhancement of spectral weight at low frequencies as the system is driven closer to the charge-ordering transition in agreement with Lanczos calculations. As V is increased the charge correlation function displays a collective mode which, for wave vectors close to (pi,pi), increases in amplitude and softens as the charge-ordering transition is approached. We propose that inelastic x-ray scattering be used to detect this mode. Large-N calculations predict superconductivity with d(xy) symmetry close to the ordering transition. We find that this is consistent with Lanczos diagonalization calculations, on lattices of 20 sites, which find that the binding energy of two holes becomes negative close to the charge-ordering transition.

Study of optical properties of electropolymerized melanin films by photopyroelectric spectroscopy

Photopyroelectric (PPE) spectroscopy, in the 350-1,075 nm wavelength range, was used to study the optical properties of electropolymerized melanin films on indium tin oxide (ITO) coated glass. The PPE intensity signal as a function of the wavelength lambda, V (n)(lambda) and its phase F (n)(lambda) were independently measured. Using the PPE signal intensity and the thermal and optical properties of the pyroelectric detector, we were able to calculate the optical absorption coefficient beta of melanin in the solid-state. We believe this to be the first such measurement of its kind on this material. Additionally, we found an optical gap in these melanin films at 1.70 eV.

Effect of over-doped yttrium on the microstructure, mechanical properties and thermal properties of a Zr-based metallic glass

The effects of over-doped yttrium on the microstructure, mechanical properties and thermal behaviour of an oxygen-contaminated Zr51Cu20.7Ni12Al16.3 bulk metallic glass are studied systematically. It has been found that, when yttrium doping is beyond the optimum doping, the glass-forming ability enhancement effect induced by yttrium addition decreases and the mechanical properties are adversely affected. In this study, a new phase with an orthorhombic structure (a = 0.69 nm, b = 0.75 nm and c = 0.74 nm) is identified in the yttrium over-doped alloys. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Microstructures and electrolytic properties of yttrium-doped ceria electrolytes: Dopant concentration and grain size dependences

The microstructures and electrolytic properties of YxCe1-xO2-x/2 (x = 0.10-0.25) electrolytes with average grain size in the range 90 nm-1.7 mu m were systematically investigated. Through detailed transmission electron microscopy characterization, nanosized domains were observed. The relationship of the domains, the doping level and grain sizes were determined, and their impacts on the electrolytic properties were systematically studied. It was found that the formation of domains has a negative impact on the electrolytic properties, so that electrolytic properties can be adjusted through careful control of domain formation, doping level and grain size. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Structural characteristics of GaSB / GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

Highly lattice mismatched (7.8%) GaAs/GaSb nanowire heterostructures were grown by metal-organic chemical vapor deposition and their detailed structural characteristics were determined by electron microscopy. The facts that (i) no defects have been found in GaSb and its interfaces with GaAs and (ii) the lattice mismatch between GaSb/GaAs was fully relaxed suggest that the growth of GaSb nanowires is purely governed by the thermodynamics. The authors believe that the low growth rate of GaSb nanowires leads to the equilibrium growth. (c) 2006 American Institute of Physics.

Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires

We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the strong influence of nanowire density on nanowire height, tapering, and base shape specific to the nanowires with high In composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Energy dispersive X-ray spectroscopy analysis together with high-resolution electron microscopy study of individual InGaAs nanowires shows large In/Ga compositional variation along the nanowire supporting the present diffusion model. Photoluminescence spectra exhibit a red shift with decreasing nanowire density due to the higher degree of In incorporation in more sparsely distributed InGaAs nanowires.

Quantum transport and integrability of the Anderson model for a quantum dot with multiple leads

We show that an Anderson Hamiltonian describing a quantum dot connected to multiple leads is integrable. A general expression for the nonlinear conductance is obtained by combining the Bethe ansatz exact solution with Landauer-Buttiker theory. In the Kondo regime, a closed form expression is given for the matrix conductance at zero temperature and when all the leads are close to the symmetric point. A bias-induced splitting of the Kondo resonance is possible for three or more leads. Specifically, for N leads, with each at a different chemical potential, there can be N-1 Kondo peaks in the conductance.

Indications of coherence-incoherence crossover in layered metallic transport

For many strongly correlated metals with layered crystal structure the temperature dependence of the interlayer resistance is different to that of the intralayer resistance. We consider a small polaron model which exhibits this behavior, illustrating how the interlayer transport is related to the coherence of quasiparticles within the layers. Explicit results are also given for the electron spectral function, interlayer optical conductivity, and the interlayer magnetoresistance. All these quantities have two contributions: one coherent (dominant at low temperatures) and the other incoherent (dominant at high temperatures).

Entanglement of two-mode Bose-Einstein condensates

We investigate the entanglement characteristics of two general bimodal Bose-Einstein condensates-a pair of tunnel-coupled Bose-Einstein condensates and the atom-molecule Bose-Einstein condensate. We argue that the entanglement is only physically meaningful if the system is viewed as a bipartite system, where the subsystems are the two modes. The indistinguishibility of the particles in the condensate means that the atomic constituents are physically inaccessible and, thus, the degree of entanglement between individual particles, unlike the entanglement between the modes, is not experimentally relevant so long as the particles remain in the condensed state. We calculate the entanglement between the two modes for the exact ground state of the two bimodal condensates and consider the dynamics of the entanglement in the tunnel-coupled case.

The gap equations for spin singlet and triplet ferromagnetic superconductors

We derive gap equations for superconductivity in coexistence with ferromagnetism. We treat singlet and triplet states With either equal spin pairing (ESP) or opposite spin pairing (OSP) states, and study the behaviour of these states as a function of exchange splitting. For the s-wave singlet state we find that our gap equations correctly reproduce the Clogston-Chandrasekhar limiting behaviour and the phase diagram of the Baltensperger-Sarma equation (excluding the FFLO region). The singlet superconducting order parameter is shown to be independent of exchange splitting at zero temperature, as is assumed in the derivation of the Clogston-Chandrasekhar limit. P-wave triplet states of the OSP type behave similarly to the singlet state as a function of exchange splitting. On the other hand, ESP triplet states show a very different behaviour. In particular, there is no Clogston-Chandrasekhar limiting and the superconducting critical temperature, T-C, is actually increased by exchange splitting.

Competition between disorder and exchange splitting in superconducting ZrZn2

We propose a simple picture for the occurrence of superconductivity and the pressure dependence of the superconducting critical temperature, T-SC, in ZrZn2. According to our hypothesis the pairing potential is independent of pressure, but the exchange splitting, E-xc leads to a pressure dependence in the (spin dependent) density of states at the Fermi level, D-sigma (epsilon(F)). Assuming p-wave pairing T-SC is dependent on D-sigma (epsilonF) which ensures that, in the absence of non-magnetic impurities, T-SC decreases as pressure is applied until it reaches a minimum in the paramagnetic state. Disorder reduces this minimum to zero, this gives the illusion that the superconductivity disappears at the same pressure as ferromagnetism does.

Progress in silicon-based quantum computation

We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a 'top-down' approach for near-term production of few-qubit demonstration devices and a 'bottom-up' approach for large-scale qubit arrays with sub-nanometre precision. The 'top-down' approach employs a low-energy (keV) ion beam to implant the phosphorus atoms. Single-atom control during implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure. In contrast, the 'bottom-up' approach uses scanning tunnelling microscope lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. In both cases, surface electrodes control the qubit using voltage pulses, and dual single-electron transistors operating near the quantum limit provide fast read-out with spurious-signal rejection.