La herencia de la época de oro en el cine mexicano de los años noventa : La ley de Herodes y Danzón

Notre mémoire cherche à identifier les traces du cinéma de “l’âge d’or” dans le cinéma mexicain des années quatre-vingt-dix. Au Mexique, l’apogée que le cinéma industriel a connu entre 1935 et 1955 a établi les principaux genres et normes du cinéma national. Le cinéma produit durant cette période, abondamment diffusé par la télévision et la vidéo et apprécié de la critique, continue d’influencer la production contemporaine. En concentrant notre analyse sur deux films en particulier, Danzón (1991) de María Novaro et La ley de Herodes (1999) de Luis Estrada, nous étudions d’une part, comment le cinéma des années quatre-vingt-dix rend hommage au cinéma de l’âge d’or et, d’autre part, comment on l’utilise pour commenter les nouvelles tendances dans la politique et la production culturelle. La diffusion continue du cinéma de l’âge d’or nous permet d’expliquer en partie son influence sur les cinéastes mexicains contemporains. Par ailleurs, le contexte de néolibéralisme et de globalisation des années quatre-vingt-dix nous permet d’avancer d’autres hypothèses concernant les raisons qui ont amené ces cinéastes à récupérer des éléments de la culture “nationale-populaire”. Nous pensons que ce contexte pourrait expliquer autant l’hommage que la critique que font les films contemporains du cinéma de l’âge d’or. Notre analyse des références au cinéma de l’âge d’or dans le cinéma des années quatre-vingt-dix s’appuie sur la théorie de l’intertextualité dans le cinéma.

La place des humanités au sein de l’institution universitaire contemporaine

Lorsqu’on évoque la place des humanités au sein de l’université contemporaine, c’est le terme de crise qui revient le plus souvent. Manque de financement, locaux vétustes, effectifs en baisse, débouchés professionnels incertains, perte de légitimité en vue des objectifs de productivité de l’université ; les humanités ne semblent plus à leur place au sein de l’institution universitaire contemporaine. Mais si les humanités sont qualifiées comme étant en crise, cela signifie également qu’elles ont connu un âge d’or, un point de référence vers lequel on fait signe lorsqu’on déplore la situation actuelle. Ainsi, notre propos partira de cet âge d’or, soit le moment de la fondation de l’Université de Berlin en 1807, pour ensuite réfléchir sur l’impact des transformations de l’institution universitaire (démocratisation, professionnalisation, etc.) vis-à-vis de cette place initiale des humanités. En ouverture, nous explorerons plusieurs perspectives pratiques nous permettant de penser l’avenir des humanités.

Hervé Guay : L’éveil culturel : théâtre et presse à Montréal, 1898-1914

Compte rendu critique de l'essai de Hervé Guay « L’éveil culturel : théâtre et presse à Montréal, 1898-1914 » (Montréal : Les Presses de l’Université de Montréal, 2010, 350 p.).

"Gender trouble" westernien : les représentations genrées dans les westerns de l'âge d'or étasunien (1948-1962)

Les westerns de l’âge d’or étasunien (1948-1962) mettent en scène un "gender trouble" en créant des personnages de femmes et d’hommes qui empruntent les uns et les autres aux caractéristiques genrées associées par la société nord-américaine et occidentale en général aux genres binaires du féminin et du masculin. Ce trouble genré se développe entre autres par la volonté de trois hommes de recréer la cellule familiale nucléaire conventionnelle dans "Red River" (1948) de Howard Hawks, par le rapport de peur et d’oppression du groupe social sur les individus dans "High Noon" (1952) de Fred Zinnemann et "Johnny Guitar" (1954) de Nicholas Ray, ainsi que par la rencontre opposant l’homme de l’Est et l’homme de l’Ouest dont les idéologies et les valeurs divergent dans "The Man Who Shot Liberty Valance" (1962) de John Ford.

Análise da relação entre alterações do padrão do sono e dor lombo-pélvica em mulheres no segundo trimestre gestacional

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

A deglutição inadequada está associada à presença de dor miofascial mastigatória?

JUSTIFICATIVA E OBJETIVOS: Os músculos da mastigação, envolvidos na fisiopatologia da dor miofascial mastigatória, também participam da função de deglutição. Diante dos resultados controversos sobre a relação entre disfunção temporomandibular (DTM) e alterações na deglutição, o objetivo deste estudo foi verificar a presença de alterações na função da deglutição em mulheres com dor miofascial mastigatória. MÉTODO: Três testes de deglutição (um sólido e dois líquidos) foram realizados em 30 mulheres com dor miofascial (grupo de estudo = GE) e 30 mulheres saudáveis (grupo controle = GC). Alterações nos padrões de deglutição como: contração da musculatura periorbicular, contração mentual, movimentos de cabeça, deglutição acompanhada de ruído, engasgos, interposição de lábio inferior, dor após deglutição e deglutição com projeção de língua para anterior foram observadas durante os três testes. Os resultados foram descritos e comparados entre os grupos através dos testes Qui-quadrado e Exato de Fisher com nível de significância de 0,05 e intervalo de confiança a 95%. RESULTADOS: Participantes do GE apresentaram chance maior de presença de atipias durante um dos testes de deglutição de líquido [teste Qui-quadrado; p < 0,05; OR: 3,29; IC 95% (1,08 - 9,95)]. Entretanto, não houve associação entre a presença de DTM e características atípicas da deglutição avaliadas em todos os testes. CONCLUSÃO: Deglutição inadequada esteve associada com a presença de dor miofascial mastigatória apenas durante a ingestão de líquido. Entretanto, não foi possível associar um tipo específico de atipia à DTM nesta amostra.

Ordering of Ge islands on Si(001) substrates patterned by nanoindentation

Spatial organization of Ge islands, grown by physical vapor deposition, on prepatterned Si(001) substrates has been investigated. The substrates were patterned prior to Ge deposition by nanoindentation. Characterization of Ge dots is performed by atomic force microscopy and scanning electron microscopy. The nanoindents act as trapping sites, allowing ripening of Ge islands at those locations during subsequent deposition and diffusion of Ge on the surface. The results show that island ordering is intrinsically linked to the nucleation and growth at indented sites and it strongly depends on pattern parameters.

Towards a controlled growth of self-assembled nanostructures: shaping, ordering and localization in Ge/Si heteroepitaxy.

The strain-induced self-assembly of suitable semiconductor pairs is an attractive natural route to nanofabrication. To bring to fruition their full potential for actual applications, individual nanostructures need to be combined into ordered patterns in which the location of each single unit is coupled with others and the surrounding environment. Within the Ge/Si model system, we analyze a number of examples of bottom-up strategies in which the shape, positioning, and actual growth mode of epitaxial nanostructures are tailored by manipulating the intrinsic physical processes of heteroepitaxy. The possibility of controlling elastic interactions and, hence, the configuration of self-assembled quantum dots by modulating surface orientation with the miscut angle is discussed. We focus on the use of atomic steps and step bunching as natural templates for nanodot clustering. Then, we consider several different patterning techniques which allow one to harness the natural self-organization dynamics of the system, such as: scanning tunneling nanolithography, focused ion beam and nanoindentation patterning. By analyzing the evolution of the dot assembly by scanning probe microscopy, we follow the pathway which leads to lateral ordering, discussing the thermodynamic and kinetic effects involved in selective nucleation on patterned substrates.

Driving Ge island ordering on nanostructured Si surfaces

Semiconductor epitaxial nanostructures have been recently proposed as the key building blocks of many innovative applications in materials science and technology. To bring their tremendous potential to fruition, a fine control of nanostructure size and placement is necessary. We present a detailed investigation of the self-ordering process in the prototype case of Ge/Si heteroepitaxy. Starting from a bottom-up strategy (step-bunching instabilities), our analysis moves to lithographic techniques (scanning tunneling lithography, nanomechanical stamping, focused ion beam patterning) with the aim of developing a hybrid approach in which the exogenous intervention is specifically designed to suit and harness the natural self-organization dynamics of the system.

A mass spectrometry study of XCO+, X = Si, Ge : Is SiCO+ a main group carbonyl? Comments on the bonding in ground state SiCO and the Si,C,O (+) potential energy surface

The cation\[Si,C,O](+) has been generated by 1) the electron ionisation (EI) of tetramethoxysilane and 2) chemical ionisation (CI) of a mixture of silane and carbon monoxide. Collisional activation (CA) experiments performed for mass-selected \[Si,C,O](+), generated by using both methods, indicate that the structure is not inserted OSiC+; however, a definitive structural assignment as Si+-CO, Si+-OC or some cyclic variant is impossible based on these results alone. Neutralisation-reionisation (+NR+) experiments for EI-generated \[Si,C,O](+) reveal a small peak corresponding to SiC+, but no detectable SiO+ signal, and thus establishes the existence of the Si+-CO isomer. CCSD(T)//B3LYP calculations employing a triple-zeta basis set have been used to explore the doublet and quartet potential-energy surfaces of the cation, as well as some important neutral states The results suggest that both Si+-CO and Si+ - OC isomers are feasible; however, the global minimum is (2)Pi SiCO+. Isomeric (2)Pi SiOC+ is 12.1 kcal mol(-1) less stable than (2)Pi SiCO+, and all quartet isomers are much higher in energy. The corresponding neutrals Si-CO and Si-OC are also feasible, but the lowest energy Si - OC isomer ((3)A") is bound by only 1.5 kcal mol(-1). We attribute most, if nor all, of the recovery signal in the +NR' experiment to SiCO+ survivor ions. The nature of the bonding in the lowest energy isomers of Si+ -(CO,OC) is interpreted with the aid of natural bond order analyses, and the ground stale bonding of SiCO+ is discussed in relation to classical analogues such as metal carbonyls and ketenes.

Deterministic control of plasma-assembled self-organized Ge/Si quantum dot arrays

Self-assembly of size-uniform and spatially ordered quantum dot (QD) arrays is one of the major challenges in the development of the new generation of semiconducting nanoelectronic and photonic devices. Assembly of Ge QD (in the ∼5-20 nm size range) arrays from randomly generated position and size-nonuniform nanodot patterns on plasma-exposed Si (100) surfaces is studied using hybrid multiscale numerical simulations. It is shown, by properly manipulating the incoming ion/neutral flux from the plasma and the surface temperature, the uniformity of the nanodot size within the array can be improved by 34%-53%, with the best improvement achieved at low surface temperatures and high external incoming fluxes, which are intrinsic to plasma-aided processes. Using a plasma-based process also leads to an improvement (∼22% at 700 K surface temperature and 0.1 MLs incoming flux from the plasma) of the spatial order of a randomly sampled nanodot ensemble, which self-organizes to position the dots equidistantly to their neighbors within the array. Remarkable improvements in QD ordering and size uniformity can be achieved at high growth rates (a few nms) and a surface temperature as low as 600 K, which broadens the range of suitable substrates to temperature-sensitive ultrathin nanofilms and polymers. The results of this study are generic, can also be applied to nonplasma-based techniques, and as such contributes to the development of deterministic strategies of nanoassembly of self-ordered arrays of size-uniform QDs, in the size range where nanodot ordering cannot be achieved by presently available pattern delineation techniques.

Plasma-deposited Ge nanoisland films on Si : is Stranski–Krastanow fragmentation unavoidable?

The formation of Ge quantum dot arrays by deposition from a low-temperature plasma environment is investigated by kinetic Monte Carlo numerical simulation. It is demonstrated that balancing of the Ge influx from the plasma against surface diffusion provides an effective control of the surface processes and can result in the formation of very small densely packed quantum dots. In the supply-controlled mode, a continuous layer is formed which is then followed by the usual Stranski-Krastanow fragmentation with a nanocluster size of 10 nm. In the diffusion-controlled mode, with the oversupply relative to the surface diffusion rate, nanoclusters with a characteristic size of 3 nm are formed. Higher temperatures change the mode to supply controlled and thus encourage formation of the continuous layer that then fragments into an array of large size. The use of a high rate of deposition, easily accessible using plasma techniques, changes the mode to diffusion controlled and thus encourages formation of a dense array of small nanoislands.

Ge/Si quantum dot formation from non-uniform cluster fluxes

The controlled growth of ultra-small Ge/Si quantum dot (QD) nuclei (≈1 nm) suitable for the synthesis of uniform nanopatterns with high surface coverage, is simulated using atom-only and size non-uniform cluster fluxes. It is found that seed nuclei of more uniform sizes are formed when clusters of non-uniform size are deposited. This counter-intuitive result is explained via adatom-nanocluster interactions on Si(100) surfaces. Our results are supported by experimental data on the geometric characteristics of QD patterns synthesized by nanocluster deposition. This is followed by a description of the role of plasmas as non-uniform cluster sources and the impact on surface dynamics. The technique challenges conventional growth modes and is promising for deterministic synthesis of nanodot arrays.

Beneficial defects : exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires

We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape of the wires can be tailored by the epitaxial strain induced by subsequent Si deposition, determining a progressive transformation of the wires in SiGe faceted quantum dots. This shape transition is described by finite element simulations of continuous elasticity and gives hints on the equilibrium shape of nanocrystals in the presence of tensile epitaxial strain.