984 resultados para ±0.3
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The synthesis of the title compound is described and results of some experiments on the degradation of patchouli alcohol are reported.
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Solid acid polymer electrolytes (SAPE) were synthesised using polyvinyl alcohol, potassium iodide and sulphuric acid in different molar ratios by solution cast technique. The temperature dependent nature of electrical conductivity and the impedance of the polymer electrolytes were determined along with the associated activation energy. The electrical conductivity at room temperature was found to be strongly depended on the amorphous nature of the polymers and H2SO4 concentration. The ac (100 Hz to 10 MHz) and dc conductivities of the polymer electrolytes with different H2SO4 concentrations were analyzed. A maximum dc conductivity of 1.05 x 10(-3) S cm(-1) has been achieved at ambient temperature for electrolytes containing 5 M H2SO4. The frequency and temperature dependent dielectric and electrical modulus properties of the SAPE were studied. The charge transport in the present polymer electrolyte was obtained using Wagner's polarization technique, which demonstrated the charge transport to be mainly due to ions. Using these solid acid polymer electrolytes novel Zn/SAPE/MnO2 solid state batteries were fabricated and their discharge capacity was calculated. An open circuit voltage of 1.758V was obtained for 5 M H2SO4 based Zn/SAPE/MnO2 battery. (C) 2010 Elsevier Ltd. All rights reserved.
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The anomalous X-ray scattering (AXS) method using Cu and Mo K absorption edges has been employed for obtaining the local structural information of superionic conducting glass having the composition (CuI)(0.3)(Cu2O)(0.35)(MoO3)(0.35). The possible atomic arrangements in near-neighbor region of this glass were estimated by coupling the results with the least-squares analysis so as to reproduce two differential intensity profiles for Cu and Mo as well as the ordinary scattering profile. The coordination number of oxygen around Mo is found to be 6.1 at the distance of 0.187 nm. This implies that the MoO6 octahedral unit is a more probable structural entity in the glass rather than MoO4 tetrahedra which has been proposed based on infrared spectroscopy. The pre-peak shoulder observed at about 10 nm(-1) may be attributed to density fluctuation originating from the MoO6 octahedral units connected with the corner sharing linkage, in which the correlation length is about 0.8 nm. The value of the coordination number of I- around Cu+ is estimated as 4.3 at 0.261 nm, suggesting an arrangement similar to that in molten CuI.
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NaBH4 reduction of a cage dione proceeds in a stereospecific fashion to give the endo,endo-diol. This reactivity is related to the crystal structure.
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The title compound, C(14)H(17)FO(2), was obtained from anti-4a, 9a:8a,10a-diepoxy-1,4,4a,5,8,8a, 9,9a, 10,10a-decahydroanthracene via tandem hydrogen-fluoride-mediated epoxide ring-opening and transannular oxacyclization. With the two cyclohexene rings folded towards the oxygen bridge, the title tetracyclic fluoroalcohol molecule displays a conformation reminiscent of a pagoda. The crystal packing is effected via intermolecular O-H center dot center dot center dot O hydrogen bonds, which link the molecules into a zigzag chain along the b axis.
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The local structural information in the near-neighbor region of superionic conducting glass (AgBr)0.4(Ag2O)0.3(GeO2)0.3 has been estimated from the anomalous X-ray scattering (AXS) measurements using Ge and Br K absorption edges. The possible atomic arrangements in the near-neighbor region of this glass were obtained by coupling the results with the least-squares variational method so as to reproduce two differential intensity profiles for Ge and Br as well as the ordinary scattering profile. The coordination number of oxygen around Ge is found to be 3.6 at a distance of 0.176 nm, suggesting the GeO4 tetrahedral unit as the probable structural entity in this glass. Moreover, the coordination number of Ag around Br is estimated as 6.3 at a distance of 0.284 nm, suggesting an arrangement similar to that in crystalline AgBr.
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In order to identify the dominant mechanism of ionic conduction, the electrical conductivity and ionic mobility of the glasses (AgX)0.4(Ag2O)0.3(GeO2)0.3 (X = I, Br, Cl) were measured separately in the temperature range from 293 to 393 K by coupling the AC technique with the TIC method. Electronic conductivity was also measured at 293 K by the Wagner polarization method. The total electrical conductivity of these glasses was found to be as high as 10-1 Ω-1 m-1, and the mobility about 10-6 m2 V-1 s-1. The variation of total electrical conductivity and mobility at constant temperature and composition with the type of halide occurred in the sequence, Cl < Br < I. For each composition, both conductivity and mobility increased with temperature. The mobile ion concentration was found to be about 1023 m-3 at 293 K, and it was insensitive to the type of halide as well as temperature. The results suggest that the change in ionic conductivity with the temperature and the type of halide present is mainly attributable to the change in ionic mobility rather than carrier concentration. Moreover, the electronic conductivity was found to be about 10-6 Ω-1 m-1 at 293 K. Thus, the electronic contribution to the total conductivity is negligibly small.
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The static and dynamic pressure concentration isotherms (PCIs) of MmNi(5-x)Al(x). (x = 0, 0.3, 0.5 and 0.8) hydrides were measured at different temperatures using volumetric method. The effect of Al substitution on PCI and thermodynamic properties were studied. The plateau pressure and maximum hydrogen storage capacity decreased with Al content whereas reaction enthalpy increased. The plateau pressure, plateau slope and hysteresis effect was observed more for dynamic PCIs compared to static PCIs. Different mathematical models used for metal hydride-based thermodynamic devices simulation are compared to select suitable model for static and dynamic PCI simulation of MmNi(5)-based hydrides. Few important physical coefficients (partial molar volume, reaction enthalpy, reaction entropy, etc.) useful for development of thermodynamic devices were estimated. A relation has been proposed to correlate aluminium content and physical coefficients for the prediction of unknown PCI. The simulated and experimental PCIs were found matching closely for both static and dynamic conditions. Copyright (C) 2014, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
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LABURPENA: Aurrerapen zientifikoek aurrera egin ahala, lehen haurtzarorako begirada eraldatu egin da, bereziki garapen motorraren alorrean. Haurtxoa izaki pasibo bezala ikusten zuten ikuskerek, subjektuaren konpetentzia goiztiarren aurrean begiruneko jarrerak gartu dituzte. Lan honetan kalitatezko hezkuntza eredu instituzionalizatua garatu zuen Emmi Pikler-en ekarpenak aztertuko ditugu. Eredu honek printzipio pedagogiko zehatz batzuen arabera jaioberria eta haurtxo txikia ikusteko beste era bat eta hezitzaile bezala zaintzen dugun ume bakoitzarekiko betetzen dugun rolaren eraldaketa proposatzen du. Honek hezitzailearen jardunbide tradizionala birplanteatzera bultzatzen gaitu, haurrenganako maitasuna eta begirunea oinarritzat duen hezkuntza sistema bat eraiki ahal izateko.
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$La_{0.7}Ca_{0.3}MnO_3$ samples were prepared in nano- and polycrystalline forms by sol-gel and solid state reaction methods, respectively, and structurally characterized by synchrotron X-ray diffraction. The magnetic properties determined by ac susceptibility and dc magnetization measurements are discussed. The magnetocaloric effect in this nanocrystalline manganite is spread over a broader temperature interval than in the polycrystalline case. The relative cooling power of the poly- and nanocrystalline manganites is used to evaluate a possible application for magnetic cooling below room temperature.
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Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.
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InAs self-assembled quantum dots(QDs) covered by 3-nm-thick InxGa1-xAs(0 less than or equal tox less than or equal to0.3) capping layer have been grown on GaAs(100) substrate. Transmission electron microscopy shows that InGaAs layer reduces the strain in the InAs islands,and atomic force microscopy evidences the deposition of InGaAs on the top of InAs islands when x = 0.3.The significant redshift of the photoluminescence (PL) peak energy and the reduction of PL linewidth of InAs quantum dots covered by InGaAs are observed. In addition,InGaAs overgrowth layer suppresses the temperature sensitivity of PL peak energy. Based on our analysis, the strain-reduction and the size distribution of the InAs QDs are the main cause of the redshift and temperature insensitivity of the PL respectively.
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Optical and structural properties of self-organized InAs/GaAs quantum dots (QDs) with InxGa1-xAs or GaAs cover layers grown by molecular beam epitaxy (MBE) have been characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) measurements. The TEM and AFM images show that the surface stress of the InAs QDs was suppressed by overgrowth of a InxGa1-xAs covering layer on the top of the QDs and the uniformity of the QDs preserved. PL measurements reveal that red shifts of the PL emission due to the reduction of the surface strain of the InAs islands was observed and the temperature sensitivity of the PL emission energy was suppressed by overgrowth of InxGa1-xAs layers compared to that by overgrowth of GaAs layers.