Structural and dielectric characteristics of Bi2O3-TiO2-SrB4O7 glasses

Glasses of the composition 0.20 Bi2O3 - 0.30 TiO2 - 0.50 SrB4O7 and 0.30 Bi2O3 - 0.45 TiO2 - 0.25 SrB4O7 have been fabricated by conventional glass processing technique. These glasses have been characterized using X-ray powder diffraction (XRD), differential thermal analysis (DTA) and high resolution transmission electron microscopy (HRTEM). The frequency response of the dielectric constant and the loss tangent of these glasses has been studied. The formation of the crystalline bismuth titanate, Bi4Ti3O12 (BiT) phase in the heat treated samples has been confirmed by XRD and HRTEM studies. The measured ET Of the glass-ceramics are found to be in good agreement with those predicted by the logarithmic mixture rule. Optical second harmonic generation (SHG) at 1064 nm has been observed in the heat treated samples and is attributed to the formation of crystalline Bi4Ti3O12 (BiT) phase in the SrB4O7 (SBO) matrix.

Resistência à flexão e microestrutura de vidro-cerâmicas feldspáticas processadas por injeção em moldes à alta temperatura

Enquanto os métodos tradicionais de processamento de restaurações cerâmicas tornaram-se notórios por sua complexidade, as técnicas mais modernas vêm privilegiando a simplicidade de execução e a automação. Dentre estas, destaca-se a injeção em moldes, que recentemente, foi associada a métodos CAD-CAM. Estudos anteriores demonstraram a viabilidade de utilização de um vidro feldspático de baixa expansão térmica, Alpha (Vita Zahnfabrik), para injeção, porém, faltam informações quanto às propriedades mecânicas e a microestrutura deste material quando submetido à injeção. Os objetivos deste estudo são: produzir pastilhas vidrocerâmicas para injeção a quente a partir de Alpha e da mistura deste vidro com partículas de alumina e zircônia; avaliar a resistência à flexão dos materiais processados, e compará-la a um material compatível existente no mercado (PM9 - Vita Zahnfabrik); estudar a estrutura microscópica dos materiais e correlacioná-la com suas propriedades mecânicas; identificar por meio de difração de raios X a formação de fases cristalinas durante as diferentes etapas de processamento. A injeção aumentou a resistência do vidro Alpha devido à redução na quantidade e tamanho dos defeitos internos, principalmente porosidades. Apesar de ter sido observada nucleação de cristais nos dois materiais, durante o processamento, não foi possível determinar de que forma este fenômeno afetou as propriedades mecânicas dos materiais. Não foi detectada alteração no padrão de distribuição das fases cristalinas observadas em microscópio eletrônico de varredura antes e depois da injeção. Não foi verificada diferença estatística significante entre a resistência à flexão de Alpha injetado e PM9. A adição de partículas de alumina e zirconia ao vidro Alpha provocou redução da resistência, devido à formação de aglomerados durante a confecção das pastilhas e a incapacidade da injeção em dispersá-los. Tais aglomerados funcionaram como concentradores de tensões, enfraquecendo o material.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

频率上转换掺稀土氧氟纳米微晶玻璃的研究进展

本文综述了近年来用于上转换发光的掺稀土离子氧氟微晶玻璃的研究概况，系统阐述了氧氟微晶玻璃中的上转换发光特性及其机理，提出了值得进一步研究的工作并对掺稀土离子氧氟微晶玻璃未来的前景做出了展望。

Analysis on fluorescence intensity reverse photonic phenomenon between red and green fluorescence of oxyfluoride nanophase vitroceramics

An interesting fluorescence intensity reverse photonic phenomenon between red and green fluorescence is investigated. The dynamic range. of intensity reverse between red and green fluorescence of Er( 0.5) Yb( 3): FOV oxyfluoride nanophase vitroceramics, when excited by 378.5nm and 522.5nm light respectively, is about 4.32 x 10(2). It is calculated that the phonon- assistant energy transfer rate of the electric multi- dipole interaction of {(4)G(11/2)( Er3+) -> F-4(9/2)( Er3+), F-2(7/2)( Yb3+). F-2(5/2)( Yb3+)} energy transfer of Er( 0.5) Yb( 3): FOV is around 1.380 x 10(8) s(-1), which is much larger than the relative multiphonon nonradiative relaxation rates 3.20 x 10(5) s(-1). That energy transfer rate for general material with same rare earth ion's concentration is about 1.194 x 10(5) s(-1). These are the reason to emerge the unusual intensity reverse phenomenon in Er( 0.5) Yb( 3): FOV. (C) 2007 Optical Society of America.

Cr^3＋：Al2O3透明多晶陶瓷光谱特性分析

对透光性良好的Cr^3＋：Al2O3透明多晶陶瓷的光谱性能进行了研究，其吸收光谱中吸收峰与单晶红宝石相一致，按吸收光谱和Tanabe-Sugano能级图，算出其晶场强度参数Dq及Racah参数B分别为1792cm^-1，689cm^-1，Dq／B=2．6，陶瓷中Cr^3＋离子所处格位的晶体场强比单晶弱一些，但Cr^3＋：Al2O3透明陶瓷仍属于强场晶体材料；当Cr^3＋掺杂浓度到达0．8wt％时，陶瓷的发射谱仍保持较好的R线发射；随Cr^3＋掺杂浓度的增大，激发峰位发生“红移”．在Cr^3＋：Al2O3透

掺Yb^3＋的氧化镧钇透明激光陶瓷的光谱特性

采用传统陶瓷烧结工艺，在无压还原气氛中低温制备了Yb^3＋掺杂量高达10％（按摩尔计）的透明性良好的氧化镧钇激光陶瓷，研究了其在室温的吸收光谱、发射光谱以及荧光寿命。结果表明：掺Yb^3＋氧化镧钇透明激光陶瓷具有宽的吸收和发射光谱以及长的荧光寿命。吸收峰位于902，942nm和968nm处，吸收截面分别为0.31×10^-20,0.45×10^-20cm^2和0.53×10^-20cm2：主发射峰位于1032nm和1075nm处，发射截面分别为1.05×10^-20cm^2和0.87×10^-20cm ^

氧化铝透明陶瓷中Cr3+的发光性能

采用传统无压烧结工艺制备出透明性良好的掺Cr3+氧化铝陶瓷;测定了陶瓷的吸收光谱、发射光谱和激发光谱。结果表明,氧化铝陶瓷吸收峰与红宝石单晶一致,吸收截面大小与单晶相近;陶瓷中Cr3+离子所处格位的晶体场强较单晶弱,但其发射谱仍有较好的锐线发射;陶瓷中微量添加剂以及晶界的存在使得Al2O3晶胞发生畸变,造成其发射峰宽化。

La2O3对氧化铝透明陶瓷显微结构和透光性能的影响

采用传统无压烧结工艺在氢气氛下制备Al2O3透明陶瓷。实验结果表明：MgO和La2O3复合添加时，随着La2O3掺杂量的增加体积密度总体上保持上升的趋势。随着保温时间的延长，陶瓷的致密化程度增大，残余气孔逐步排出，晶粒进一步长大。采用La2O3和MgO复合添加比单独掺入MgO陶瓷样品透过率更高，掺杂效果更好。在烧结温度为1750℃，保温时问为1h条件下，在波艮为300～800nm测试范围内，陶瓷样品的全透过率大于82％，最大值为86％。

Cr^4＋在Al2O3透明陶瓷中的发光行为

采用传统无压烧结工艺制备出透明性良好的掺Cr的Al2O3透明陶瓷；测定了其吸收光谱和荧光光谱，发现在Al2O3六配位的八面体结构中，除了有Cr^3＋离子的特征吸收峰外，由于有Mg^2＋的电荷补偿作用，也有Cr^4＋离子，Cr^4＋的荧光发射峰位于1223nm附近，与Cr^4＋在四面体中的发光行为一致。但其荧光发射峰较窄，半高宽△λ仅为37nm。

掺Yb^3＋氧化镧钇透明激光陶瓷的光谱特性

采用传统陶瓷烧结工艺,在无压还原气氛下低温制备出透明性良好的掺Yb^3＋氧化镧钇透明激光陶瓷,测试了其在室温下的吸收光谱、发射光谱和荧光寿命.结果表明,掺Yb^3＋氧化镧钇透明激光陶瓷的吸收系数随着Yb^3＋掺杂浓度的增加而增大,最强吸收峰974 nm处的吸收截面为0.90～1.12×10^-20 cm^2;主发射峰1 032 nm和1 075 nm处的发射截面分别为1.05×10^-20 cm^2和0.87×10^-20 cm^2; Yb^3＋掺杂浓度为5at.%时荧光寿命为1.38 ms,并随Yb^3

Electroluminescence in Single Layer MoS2

We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.

Phase conversion and spectral properties of long lasting phosphor Zn-3 (PO4)(2): Mn2+, Ga3+

A red long lasting phosphor Zn-3(PO4)(2): Mn2+ Ga3+ (ZPMG) was prepared by ceramic method, and phase conversion and spectral properties were investigated. Results indicated that the phase conversion from alpha-Zn-3(PO4), beta-Zn-3(PO4)(2) to gamma-Zn-3(PO4)(2) occurs with different manganese concentration incorporated and sinter process. The structural change induced by the phase transformation results in a remarkable difference in the spectral properties. The possible luminescence mechanism for this red LLP with different forms has been illustrated.

Organic integrated pixels fabricated by a full evaporation method

An organic integrated pixel consisting of an organic light-emitting diode driven by an organic thin-film field-effect transistor (OTFT) was fabricated by a full evaporation method oil a transparent glass substrate. The OTFT was designed as a top-gate Structure, and the insulator is composed of a double-layer polymer of Nylon 6 and Teflon to lower the operation voltage and the gate-leakage current, and improve the device stability. The field-effect mobility of the OTFT is more than 0.5 cm(2) V-1 s(-1), and the on/off ratio is larger than 10(3). The brightness of the pixel reached as large as 300 cd m(-2) at a driving current of 50 mu A.

Studies on polypyrrole film in room temperature melt

A bluish-black shining free standing polypyrrole film (PPy) of electronic conductivity 130 S cm-1 has been prepared by electrochemical oxidative polymerization of pyrrole on Pt/transparent glass conducting electrode resistance 15 O cm-1, using a room temperature melt as an electrolyte, composed of 1:3 stoichiometric ratio of cetyl pyridinium chloride and anhydrous aluminum chloride at 0.58 V versus Al wire as a reference electrode. The film possessed a charge transfer resistance of 132 O, and showed two absorption peaks at 457 and 1264 nm in the UV-vis–NIR diffused reflectance spectra. The morphology of the film was hexagonal. The potential step technique suggested a layered structure. This thin film can easily be peeled off from the electrode surface after three cycles and can be used for various applications like dissipation of electrostatic charge, battery electrode materials, solid electrolytic capacitor, electrochromic windows and displays, microactuators etc. It was also characterized by IR, thermal and SEM studies.