Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect

By mass-selected low energy ion beam deposition, amorphous carbon film was obtained. X-ray diffraction, Raman and Auger electron spectroscopy depth line shape measurements showed that such carbon films contained diamond particles. The main growth mechanism is subsurface implantation. Furthermore, it was indicated in a different way that ion bombardment played a decisive role in bias enhanced nucleation of chemical vapor deposition diamond.

The investigations on semi-insulating GaAs by surface photovoltaic spectroscopy

The surface photovoltage (SPV) effect induced by the defect states in semi-insulating (SI) GaAs was studied. The PV response below the band edge was measured at room temperature with a de optical biasing. The spectra were found to be strongly dependent on the surface recombination and were attributed to formation of the carrier concentration gradient near the surface region, showing that SPV is a very sensitive and nondestructive technique for characterizing the surface quality of the SI-GaAs wafers.

Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

A deep level transient spectroscopy technique has been used to determine the emission activation energies and capture barriers for electrons and holes in InAs self-assembled quantum dots embedded in GaAs. The ground electron and hole energies relative to their respective energy band edges of GaAs are 0.13 and 0.09 eV. Measurements show that the capture cross section of quantum dots is thermally activated. The capture barrier of quantum dots for electrons and holes are 0.30 and 0.26 eV, respectively. The results fit well with the results of photoluminescence spectroscopy measurements. (C) 2000 Elsevier Science B.V. All rights reserved.

Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques

The conduction-band offset Delta E-C has been determined for a molecular beam epitaxy grown GaAs/In0.2Ga0.8As single quantum-well structure, by measuring the capacitance-voltage (C - V) profiling, taking into account a correction for the interface charge density, and the capacitance transient resulting from thermal emission of carriers from the quantum well, respectively. We found that Delta E-C = 0.227 eV, corresponding to about 89% Delta E-g, from the C - V profiling; and Delta E-C = 0.229eV, corresponding to about 89.9% Delta E-g, from the deep-level transient spectroscopy (DLTS) technique. The results suggest that the conduction-band discontinuity Delta E-C obtained from the C-V profiling is in good agreement with that obtained from the DLTS technique. (C) 1998 American Institute of Physics.

Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy

The microstructure, hydrogen bonding configurations and hydrogen content of high quality and stable hydrogenated amorphous silicon (a-Si:H) films prepared by a simple ''uninterrupted growth/annealing" plasma enhanced chemical vapor deposition technique have been investigated by Raman scattering and infrared absorption spectroscopy. The high stability a-Si:H films contain small amounts of a microcrystalline phase and not less hydrogen (10-16 at. %), particularly, the clustered phase hydrogen, Besides, the hydrogen distribution is very inhomogeneous. Some of these results are substantially distinct from those of conventional device-quality n-Si:H film or stable cr-Si:H films prepared by the other techniques examined to date. The stability of n-Si:H films appears to have no direct correlation with the hydrogen content or the clustered phase hydrogen concentration. The ideal n-Si:H network with high stability and low defect density is perhaps not homogeneous. (C) 1998 American Institute of Physics.

A V-shaped module technique for promoting generation photocurrent density of silicon solar cells

A V-shaped solar cell module consists of two tilted mono-crystalline cells [J. Li, China Patent No. 200410007708.6 (March, 2004)]. The angle included between the two tilted cells is 90 degrees. The two cells were fabricated by using polished silicon wafers. The scheme of both-side polished wafers has been proposed to reduce optical loss. Compared to solar cells in a planar way, the V-shaped structure enhances external quantum efficiency and leads to an increase of 15% in generation photocurrent density. The following three kinds of trapped photons are suggested to contribute to the increase: (1) infrared photons converted from visible photons due to a transformation mechanism, (2) photons reflected from top contact metal, and (3) a residual reflection which can not be eliminated by an antireflection coating.

Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH-->1E and 1LH-->1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.

Raman Spectroscopy of Irradiation Effect in Three Carbon Allotropes Induced by Low Energy B Ions

Irradiation efect in three carbon allotropes C60, diamond and highly oriented pyrolytic graphite (HOPG) induced by 170 keV B ions, mainly including the process of the damage creation, is investigated by means of Raman spectroscopy technique. The diferences on irradiation sensitivity and structural stability for C60, HOPG and diamond are compared. The analysis results indicate that C60 is the most sensitive for B ions irradiation,diamond is the second one and the structure of HOPG is the most stable under B ion irradiation. The damage cross sections ? of C60, diamond and HOPG deduced from the Raman spectra are 7.78×10−15 , 6.38×10−15 and1.31 × 10−15cm2, respectively.

Microelements in Potato and Lily Samples Studied by Laser-Induced Breakdown spectroscopy Technology

A LIBS setup was built in the Institute of Modern Physics. In our experiments, LIBS spectra produced by infrared radiation of Nd : YAG nanosecond laser with 100 and 150 mJ pulse energy, respectively, were measured by fiber optic spectrometer in the ranges of 230-430 run and 430-1080 nm with a delay time of 1.7 and gate width of 2 ms for potato and lily samples prepared by vacuum freeze-dried technique. The lines from different metal elements such as K, Ca, Na, Mg, Fe, Al, Mn and Ti, and nonmetal elements such as C, N, O and H, and some molecular spectra from C-2, CaO, and CN were identified according to their wavelengths. The relative content of the six microelements, Ca, Na, K, Fe, Al, and Mg in the samples were analyzed according to their representative line intensities. By comparison we found that there are higher relative content of Ca and Na in lily samples and higher relative content of Mg in potato samples. The experimental results showed that LIBS technique is a fast and effective means for measuring and comparing the contents of microelements in plant samples.

State-selective electron capture for keV He2+ ions on helium collisions studied by recoil momentum spectroscopy

State-selective single electron capture cross sections are measured by recoil ion momentum spectroscopy technique for He2+ on He at 30 keV incident energy. The cross sections for capture into ground and excited states are obtained and compared to classical model calculations as well as to the quantum mechanical calculations. The experimental results are in good agreement with quantum mechanical results.

Influence of Laser Wavelength on Laser-induced Breakdown Spectroscopy Applied to Semi-Quantitative Analysis of Trace-Elements in a Plant Sample

Laser-induced breakdown spectroscopy (LIBS) as a powerful analytical technique is applied to analyze trace-elements in fresh plant samples. We investigate the LIBS spectra of fresh holly leaves and observe more than 430 lines emitted from 25 elements and molecules in the region 230-438 nm. The influence of laser wavelength on LIBS applied to semi-quantitative analysis of trace-element contents in plant samples is studied. The results show that the UV laser has lower relative standard deviations and better repeatability for semi-quantitative analysis of trace-element contents in plant samples. This work may be helpful for improving the quantitative analysis power of LIBS applied to plant samples.

State-to-state dynamics of elementary chemical reactions using Rydberg H-atom translational spectroscopy

In this review, a few examples of state-to-state dynamics studies of both unimolecular and bimolecular reactions using the H-atom Rydberg tagging TOF technique were presented. From the H2O photodissociation at 157 nm, a direction dissociation example is provided, while photodissociation of H2O at 121.6 has provided an excellent dynamical case of complicated, yet direct dissociation process through conical intersections. The studies of the O(D-1) + H-2 --> OH+H reaction has also been reviewed here. A prototype example of state-to-state dynamics of pure insertion chemical reaction is provided. Effect of the reagent rotational excitation and the isotope effect on the dynamics of this reaction have also been investigated. The detailed mechanism for abstraction channel in this reaction has also been closely studied. The experimental investigations of the simplest chemical reaction, the H-3 system, have also been described here. Through extensive collaborations between theory and experiment, the mechanism for forward scattering product at high collision energies for the H+HD reaction was clarified, which is attributed to a slow down mechanism on the top of a quantized barrier transition state. Oscillations in the product quantum state resolved different cross sections have also been observed in the H+D-2 reaction, and were attributed to the interference of adiabatic transition state pathways from detailed theoretical analysis. The results reviewed here clearly show the significant advances we have made in the studies of the state-to-state molecular reaction dynamics.

Identifying the isolated transition metal ions/oxides in molecular sieves and on oxide supports by UV resonance Raman spectroscopy

Isolated transition metal ions/oxides in molecular sieves and on surfaces are a class of active sites for selective oxidation of hydrocarbons. Identifying the active sites and their coordination structure is vital to understanding their essential role played in catalysis and designing and synthesizing more active and selective catalysts. The isolated transition metal ions in the framework of molecular sieves (e.g., TS-1, Fe-ZSM-5, and V-MCM-41) or on the surface of oxides (e.g., MoO3/Al2O3 and TiO2/SiO2) were successfully identified by UV resonance Raman spectroscopy. The charge transfer transitions between the transition metal ions and the oxygen anions are excited by a UV laser and consequently the UV resonance Raman effect greatly enhances the Raman signals of the isolated transition metal ions. The local coordination of these ions in the rigid framework of molecular sieves or in the relatively flexible structure on the surface can also be differentiated by the shifts of the resonance Raman bands. The relative concentration of the isolated transition metal ion/oxides could be estimated by the intensity ratio of Raman bands. This study demonstrates that the UV resonance Raman spectroscopy is a general technique that can be widely applied to the in-situ characterization of catalyst synthesis and catalytic reactions. (C) 2003 Elsevier Science (USA). All rights reserved.

Kinetic study of DNA/DNA hybridization with electrochemical impedance spectroscopy

The hybridization of immobilized oligonucleotides probe strands with solution phase targets is the underlying principle of microarraybased techniques for the analysis of DNA variation. To study the kinetics of DNA/DNA hybridization, target DNA is often prior labeled with markers. A label-free method of electrochemical impedance spectra (EIS) for study the hybridization in process was reported. The Langmuir model was used to determine the association rate constant (K-on), the dissociation rate constant (K-off) and the affinity rate constant (K-A), for perfect matched DNA hybridization. The results show that, EIS is a successful technique possessing high effectivity and sensitivity to study DNA/DNA hybridization kinetics. This work can provide another view on EIS for the studying of DNA/DNA hybridization.