Optimum design of 1.4KV trench IGBTs - The next generation of high power switching devices

The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1-4 kV) to HVDC (6.5 kV). Here we present for the first time an optimum design of a 1.4kV Trench IGBT using a new, fully integrated optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4kV Trench IGBTs which are in excellent agreement with the TCAD predictions are reported.

32 Gb/s multilevel modulation of an 850 nm VCSEL for next-generation datacommunication standards

An 850 nm vertical-cavity surface-emitting laser is modulated at 32 Gb/s using pulse-amplitude modulation with four levels. Transmitter predistortion generates an optimized modulation waveform, which requires a receiver bandwidth of only 15 GHz. © 2011 OSA.

Modulation formats for next-generation optical datacommunications

This paper considers next-generation optical datacommunication standards and discusses the types of modulation formats that are relevant. The performance of several schemes is considered over multimode fibre. The trade-offs between the different modulation formats are considered in terms of link length, receiver sensitivity and complexity of implementation. © 2011 IEEE.

Orthogonal multipulse modulation for next-generation datacommunication links

Orthogonal multipulse modulation is demonstrated to allow ≈30 Gb/s real-time transmission over multimode fibre using an 850 nm VCSEL. The scheme eases considerably component bandwidth requirements compared with conventional NRZ modulation. © 2011 OSA.

28 Gb/s unequalized PAM3 modulation of an 850 nm VCSEL for next-generation datacommunication links

An 850 nm vertical-cavity surface-emitting laser is modulated at 28 Gb/s using pulseamplitude modulation with three levels. Unequalized transmission over 100 m of OM3 MMF is demonstrated, with advantages over NRZ and PAM4 modulation. © 2012 OSA.

28 Gb/s unequalized PAM3 modulation of an 850 nm VCSEL for next-generation datacommunication links

An 850 nm vertical-cavity surface-emitting laser is modulated at 28 Gb/s using pulseamplitude modulation with three levels. Unequalized transmission over 100 m of OM3 MMF is demonstrated, with advantages over NRZ and PAM4 modulation. © OSA 2012.

Orthogonal multipulse modulation for next-generation datacommunication links

Orthogonal multipulse modulation is demonstrated to allow ≈30 Gb/s real-time transmission over multimode fibre using an 850 nm VCSEL. The scheme eases considerably component bandwidth requirements compared with conventional NRZ modulation. © 2011 OSA.