Fracture Properties of Concrete-Concrete Interfaces Using Digital Image Correlation

The mode I and mode II fracture toughness and the critical strain energy release rate for different concrete-concrete jointed interfaces are experimentally determined using the Digital Image Correlation technique. Concrete beams having different compressive strength materials on either side of a centrally placed vertical interface are prepared and tested under three-point bending in a closed loop servo-controlled testing machine under crack mouth opening displacement control. Digital images are captured before loading (undeformed state) and at different instances of loading. These images are analyzed using correlation techniques to compute the surface displacements, strain components, crack opening and sliding displacements, load-point displacement, crack length and crack tip location. It is seen that the CMOD and vertical load-point displacement computed using DIC analysis matches well with those measured experimentally.

Nanoscale ZnO/CdS heterostructures with engineered interfaces for high photocatalytic activity under solar radiation

Semiconductor based nanoscale heterostructures are promising candidates for photocatalytic and photovoltaic applications with the sensitization of a wide bandgap semiconductor with a narrow bandgap material being the most viable strategy to maximize the utilization of the solar spectrum. Here, we present a simple wet chemical route to obtain nanoscale heterostructures of ZnO/CdS without using any molecular linker. Our method involves the nucleation of a Cd-precursor on ZnO nanorods with a subsequent sulfidation step leading to the formation of the ZnO/CdS nanoscale heterostructures. Excellent control over the loading of CdS and the microstructure is realized by merely changing the initial concentration of the sulfiding agent. We show that the heterostructures with the lowest CdS loading exhibit an exceptionally high activity for the degradation of methylene blue (MB) under solar irradiation conditions; microstructural and surface analysis reveals that the higher activity in this case is related to the dispersion of the CdS nanoparticles on the ZnO nanorod surface and to the higher concentration of surface hydroxyl species. Detailed analysis of the mechanism of formation of the nanoscale heterostructures reveals that it is possible to obtain deterministic control over the nature of the interfaces. Our synthesis method is general and applicable for other heterostructures where the interfaces need to be engineered for optimal properties. In particular, the absence of any molecular linker at the interface makes our method appealing for photovoltaic applications where faster rates of electron transfer at the heterojunctions are highly desirable.

Design issues and caching strategies for CD-ROM based multimedia storage

CD-ROMs have proliferated as a distribution media for desktop machines for a large variety of multimedia applications (targeted for a single-user environment) like encyclopedias, magazines and games. With CD-ROM capacities up to 3 GB being available in the near future, they will form an integral part of Video on Demand (VoD) servers to store full-length movies and multimedia. In the first section of this paper we look at issues related to the single- user desktop environment. Since these multimedia applications are highly interactive in nature, we take a pragmatic approach, and have made a detailed study of the multimedia application behavior in terms of the I/O request patterns generated to the CD-ROM subsystem by tracing these patterns. We discuss prefetch buffer design and seek time characteristics in the context of the analysis of these traces. We also propose an adaptive main-memory hosted cache that receives caching hints from the application to reduce the latency when the user moves from one node of the hyper graph to another. In the second section we look at the use of CD-ROM in a VoD server and discuss the problem of scheduling multiple request streams and buffer management in this scenario. We adapt the C-SCAN (Circular SCAN) algorithm to suit the CD-ROM drive characteristics and prove that it is optimal in terms of buffer size management. We provide computationally inexpensive relations by which this algorithm can be implemented. We then propose an admission control algorithm which admits new request streams without disrupting the continuity of playback of the previous request streams. The algorithm also supports operations such as fast forward and replay. Finally, we discuss the problem of optimal placement of MPEG streams on CD-ROMs in the third section.

Electrical and Optical Properties of Diketopyrrolopyrrole-Based Copolymer Interfaces in Thin Film Devices

Two donor acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 x 10(12) eV(-1) cm(-2) in TDPP-BBT and 3.5 x 10(12) eV(-1) cm(-2) in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10(-3) cm(2)/(V s). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

Studies of interfaces in Al-65 Cu20Fe15

The study of interfaces in quasicrystalline alloys is relatively new. Apart From the change in orientation, symmetry and chemistry which can occur across homophase and heterophase boundaries in crystalline materials, we have the additional, exciting possibility of an interface between quasicrystalline and its rational approximant. High resolution electron microscopy is a powerful technique to study the structural details of such interfaces. We report the results of a HREM study of the interface between the icosahedral phase and the related Al13Fe4 type monoclinic phase in melt spun and annealed Al65Cu20Fe15 alloy.

Studies on age-hardening characteristics of ceramic particle/matrix interfaces in Al-Cu-SiCp composites using ultra low-load-dynamic microhardness measurements

Ultra low-load-dynamic microhardness testing facilitates the hardness measurements in a very low volume of the material and thus is suited for characterization of the interfaces in MMC's. This paper details the studies on age-hardening behavior of the interfaces in Al-Cu-5SiC(p) composites characterized using this technique. Results of hardness studies have been further substantiated by TEM observations. In the solution-treated condition, hardness is maximum at the particle/matrix interface and decreases with increasing distance from the interface. This could be attributed to the presence of maximum dislocation density at the interface which decreases with increasing distance from the interface. In the case of composites subjected to high temperature aging, hardening at the interface is found to be faster than the bulk matrix and the aging kinetics becomes progressively slower with increasing distance from the interface. This is attributed to the dislocation density gradient at the interface, leading to enhanced nucleation and growth of precipitates at the interface compared to the bulk matrix. TEM observations reveal that the sizes of the precipitates decrease with increasing distance from the interface and thus confirms the retardation in aging kinetics with increasing distance from the interface.

X-ray reflectivity study of semiconductor interfaces

The results of an X-ray reflectivity study of thick AlAs-AlGaAs and thin GeSi-Ge multilayers grown using metal-organic vapour-phase epitaxy and ion-beam sputtering deposition techniques, respectively, are presented. Asymmetry in interfaces is observed in both of these semiconductor multilayers. It is also observed that although the Si-on-Ge interface is sharp, an Si0.4Ge0.6 alloy is formed at the Ge-on-Si interface. In the case of the III-V semiconductor, the AlAs-on-AlGaAs interface shows much greater roughness than that observed in the AlGaAs-on-AlAs interface. For thin multilayers it is demonstrated that the compositional profile as a function of depth can be obtained directly from the X-ray reflectivity data.

Hydrogen-bond dynamics near a micellar surface: Origin of the universal slow relaxation at complex aqueous interfaces

The dynamics of hydrogen bonds among water molecules themselves and with the polar head groups (PHG) at a micellar surface have been investigated by long molecular dynamics simulations. The lifetime of the hydrogen bond between a PHG and a water molecule is found to be much longer than that between any two water molecules, and is likely to be a general feature of hydrophilic surfaces of organized assemblies. Analyses of individual water trajectories suggest that water molecules can remain bound to the micellar surface for more than 100 ps. The activation energy for such a transition from the bound to a free state for the water molecules is estimated to be about 3.5 kcal/mol.

An extended Cahn-Hilliard model for interfaces with cubic anisotropy

For studying systems with a cubic anisotropy in interfacial energy sigma, we extend the Cahn-Hilliard model by including in it a fourth-rank term, namely, gamma (ijlm) [partial derivative (2) c/(partial derivativex(i) partial derivativex(j))] [partial derivative (2) c/(partial derivativex(l) partial derivativex(m))]. This term leads to an additional linear term in the evolution equation for the composition parameter field. It also leads to an orientation-dependent effective fourth-rank coefficient gamma ([hkl]) in the governing equation for the one-dimensional composition profile across a planar interface. The main effect of a non-negative gamma ([hkl]) is to increase both sigma and interfacial width w, each of which, upon suitable scaling, is related to gamma ([hkl]) through a universal scaling function. In this model, sigma is a differentiable function of interface orientation (n) over cap, and does not exhibit cusps; therefore, the equilibrium particle shapes (Wulff shapes) do not contain planar facets. However, the anisotropy in the interfacial energy can be large enough to give rise to corners in the Wulff shapes in two dimensions. In particles of finite sizes, the corners become rounded, and their shapes tend towards the Wulff shape with increasing particle size.

Ellipsometry as a Sensitive Technique to Probe film -Substrate Interfaces: Al2O3 on Si(100)

An attempt has been made to study the film-substrate interface by using a sensitive, non- conventional tool. Because of the prospective use of gate oxide in MOSFET devices, we have chosen to study alumina films grown on silicon. Film-substrate interface of alumina grown by MOCVD on Si(100) was studied systematically using spectroscopic ellipsometry in the range 1.5-5.0 eV, supported by cross-sectional SEM, and SIMS. The (ε1,ε2) versus energy data obtained for films grown at 600°C, 700°C, and 750°C were modeled to fit a substrate/interface/film “sandwich”. The experimental results reveal (as may be expected) that the nature of the substrate -film interface depends strongly on the growth temperature. The simulated (ε1,ε2) patterns are in excellent agreement with observed ellipsometric data. The MOCVD precursors results the presence of carbon in the films. Theoretical simulation was able to account for the ellipsometry data by invoking the presence of “free” carbon in the alumina films.

Interfaces In Quasicrystalline Systems

Structural relations between quasicrystalline and related crystalline rational approximant phases have been of interest for some time now. Such relations are now being used to understand interface structures. Interfaces between structural motif - wise related, but dissimilarly periodic phases are expected to show a degree of lattice match in certain directions. Our earlier studies in the Al-Cu-Fe system using the HREM technique has shown this to be true. The structural difference leads to well defined structural ledges in the interface between the icosahedral Al-Cu-Fe phase and the monoclinic Al13Fe4 type phase. In the present paper we report our results on the HREM study of interfaces in Al-Cu-Fe and Al-Pd-Mn systems. The emphasis will be on heterophase interfaces between quasiperiodic and periodic phases, where the two are structurally related. An attempt will be made to correlate the results with calculated lattice projections of the two structures on the grain boundary plane.

Interfaces In Quasicrystalline Systems

Structural relations between quasicrystalline and related crystalline rational approximant phases have been of interest for some time now. Such relations are now being used to understand interface structures. Interfaces between structural motif - wise related, but dissimilarly periodic phases are expected to show a degree of lattice match in certain directions. Our earlier studies in the Al-Cu-Fe system using the HREM technique has shown this to be true. The structural difference leads to well defined structural ledges in the interface between the icosahedral Al-Cu-Fe phase and the monoclinic Al13Fe4 type phase. In the present paper we report our results on the HREM study of interfaces in Al-Cu-Fe and Al-Pd-Mn systems. The emphasis will be on heterophase interfaces between quasiperiodic and periodic phases, where the two are structurally related. An attempt will be made to correlate the results with calculated lattice projections of the two structures on the grain boundary plane.

Optimizing Multimedia Experience in a Thin Client Environment for a Resource Constrained Processor

In this paper, we study how TCP and UDP flows interact with each other when the end system is a CPU resource constrained thin client. The problem addressed is twofold, 1) the throughput of TCP flows degrades severely in the presence of heavily loaded UDP flows 2) fairness and minimum QoS requirements of UDP are not maintained. First, we identify the factors affecting the TCP throughput by providing an in-depth analysis of end to end delay and packet loss variations. The results obtained from the first part leads us to our second contribution. We propose and study the use of an algorithm that ensures fairness across flows. The algorithm improves the performance of TCP flows in the presence of multiple UDP flows admitted under an admission algorithm and maintains the minimum QoS requirements of the UDP flows. The advantage of the algorithm is that it requires no changes to TCP/IP stack and control is achieved through receiver window control.