Optical properties of organic superconductor K-(BETS)2FeBr4 /

K-(BETS)2FeBr4 is a quasi-2D charge transfer organic metal with interesting electronic and magnetic properties. It undergoes a transition to an antiferromagnetic (AF) state at ambient pressure at the Neel temperature (T^^) = 2.5 K, as well as to a superconducting (SC) state at 1.1 K [1]. The temperature dependence of the electrical resistivity shows a small decrease at T;v indicating the resistivity drops as a result of the onset of the ordering of Fe'*''" spins. A sharp drop in the resistivity at 1.1 K is due to its superconducting transition. The temperature dependence of the susceptibility indicates an antiferromagnetic spin structure with the easy axis parallel to the a-axis. The specific heat at zero-field shows a large peak at about 2.4 K, which corresponds to the antiferromagnetic transition temperature (Tat) and no anomaly is observed around the superconducting transition temperature (1.1 K) demonstrating that the magnetically ordered state is not destroyed by the appearance of another phase transition (the superconducting transition) in the 7r-electron layers [1], [2]. This work presents an investigation of how the low frequency electromagnetic response is affected by the antiferromagnetic and superconducting states, as well as the onset of strong correlation. The location of the easy axis of three samples was determined and polarized thermal reflectance measurements of these «-(BETS)2FeBr4 samples oriented with their vertical axis along the a- and c axes were then carried out using a *He refrigerator cryostat and a Martin-Puplett type polarizing interferometer at various temperatures (T = 0.5 K, 1.4 K. 1.9 K, 2.8 K) above and below the superconducting state and/or antiferromagnetic state. Comparison of the SC state to the normal state along the o- and c-axes indicates a rising thermal reflectance at low frequencies (below 10 cm"' ) which may be a manifestation of the superconducting energy gap. A dip-Hke feature is detected at low frequencies (below 15 cm"') in the thermal reflectance plots which probe the antiferromagnetic state along the two axes, and may be due to the opening of a gap in the excitation spectrum as a result of the antiferromagnetism. In another set of experiments, thermal reflectance measurements carried out along the a- and c-axes at higher temperatures (10 K-80 K) show that the reflectivity decreases with increasing temperature to 60 K (the coherence temperature) above which it increases again. Comparison of the thermal reflectance plots along the a- and c-axes at higher temperatures reveals an anisotropy between these two axes. The Hagen-Rubens thermal reflectance plots corresponding to an average over the ac-plane were calculated using experimental hterature resistivity values. Comparison of the Hagen-Rubens plots with the experimental thermal reflectance along the a- and c-axes indicates that both exhibit the general trend of a decrease in thermal reflectance with increasing frequency, however the calculated Hagen-Rubens thermal reflectance at different temperatures is much lower than the experimental curves.

Far infrared optical properties of V and Cr doped Sb2Te3 /

The far infrared reflectance of Sb2Te3 , Sbi.97Vo.o3Te3 and Sbi.94Cr .o6Te3 was measured near normal incidence at different temperatures (between 45K and 300K). The direct current resistivities of the above samples were also measured between the temperatures of 4K and 300K. Also Kramers Kronig (KK) analyses were performed on the reflectance spectra to obtain the optical conductivities. In the doped samples, it was observed that a phonon at 62cm-1 softens to about 55cm-1 on decreasing the temperature from 295K to 45K. Also, it was observed that the plasma frequency of the doped samples is independent of doping. The scattering rate for the vanadium doped sample was seen to be greater than that for the chromium doped sample despite the fact that vanadium impurity density is less than that of chromium. The Drude-Lorentz model fits to the KK optical conductivity show that the samples used in this work are conventional metals. Definitive measurements of the temperature dependence of the scattering rate across the ferromagnetic transition await equipment changes allowing measurements at low temperature using the mercury cadmium telluride (MCT) detector.

Calculation of the optical conductivity for the Anderson impurity model using the slave boson technique

The optical conductivity of the Anderson impurity mode l has been calculated by emp l oying the slave boson technique and an expansion in powers of l i N, where N is the d egeneracy o f the f electron level . This method has been used to find the effective mass of the conduction electrons for temperatures above and below the Kondo tempera ture. For low temperatures, the mass enhancement is f ound to be large while a t high t emperatures, the mass enhancement is sma ll. The conductivity i s f ound to be Drude like with frequency dependent effective mass and scattering time for low independent effective mass and temperatures and scattering time f requency for high t emperatures. The behavior of both the effective mass and the conductivity is in qualitative agreement with experimental r esul t s .

Far-infrared optical properties of the heavy fermion superconductor UB[E13]

Temperature dependent resistivity, p, magnetic susceptibility, X, and far-infrared reflectance measurements were made on the low Tc superconductor UBe13. Two variants of UBe13 have been proposed, named 'L'- (for low Tc ) and 'H'-type (for high Tc ). Low temperature resistivity measurements confirmed that our sample was of H-type and that the transition temperature was at 0.9 K. This was further confirmed with the observation of this transition in the AC-susceptibility. Low temperature reflectance measurements showed a decrease in the reflectivity as the temperature is lowered from 300 to 10 K, which is in qualitative agreement with the increasing resistivity in this temperature range as temperature is lowered. No dramatic change in the reflectivity was observed between 10 and 0.75 K. A further decrease of the reflectance was observed for the temperature of 0.5 K. The calculated optical conductivity shows a broad minimum near 80 cm-1 below 45 K. Above 45 K the conductivity is relatively featureless. As the temperature is lowered, the optical conductivity decreases. The frequency dependent scattering rate was found to be flat for temperatures between 300 and 45 K. The development of a peak, at around 70 cm-1 was found for temperatures of 45 K and below. This peak has been associated with the energy at which the transition to a coherent state occurs from single impurity scattering in other heavy fermion systems. The frequency dependent mass enhancement coefficient was found to increase at low frequencies as the frequency decreases. Its' magnitude as frequency approaches zero also increased as the temperature decreased.

Montage et caractérisation d’un système de spectroscopie Raman accordable en longueur d’onde utilisant des réseaux de Bragg comme filtre : application aux nanotubes de carbone

La spectroscopie Raman est un outil non destructif fort utile lors de la caractérisation de matériau. Cette technique consiste essentiellement à faire l’analyse de la diffusion inélastique de lumière par un matériau. Les performances d’un système de spectroscopie Raman proviennent en majeure partie de deux filtres ; l’un pour purifier la raie incidente (habituellement un laser) et l’autre pour atténuer la raie élastique du faisceau de signal. En spectroscopie Raman résonante (SRR), l’énergie (la longueur d’onde) d’excitation est accordée de façon à être voisine d’une transition électronique permise dans le matériau à l’étude. La section efficace d’un processus Raman peut alors être augmentée d’un facteur allant jusqu’à 106. La technologie actuelle est limitée au niveau des filtres accordables en longueur d’onde. La SRR est donc une technique complexe et pour l’instant fastidieuse à mettre en œuvre. Ce mémoire présente la conception et la construction d’un système de spectroscopie Raman accordable en longueur d’onde basé sur des filtres à réseaux de Bragg en volume. Ce système vise une utilisation dans le proche infrarouge afin d’étudier les résonances de nanotubes de carbone. Les étapes menant à la mise en fonction du système sont décrites. Elles couvrent les aspects de conceptualisation, de fabrication, de caractérisation ainsi que de l’optimisation du système. Ce projet fut réalisé en étroite collaboration avec une petite entreprise d’ici, Photon etc. De cette coopération sont nés les filtres accordables permettant avec facilité de changer la longueur d’onde d’excitation. Ces filtres ont été combinés à un laser titane : saphir accordable de 700 à 1100 nm, à un microscope «maison» ainsi qu’à un système de détection utilisant une caméra CCD et un spectromètre à réseau. Sont d’abord présentés les aspects théoriques entourant la SRR. Par la suite, les nanotubes de carbone (NTC) sont décrits et utilisés pour montrer la pertinence d’une telle technique. Ensuite, le principe de fonctionnement des filtres est décrit pour être suivi de l’article où sont parus les principaux résultats de ce travail. On y trouvera entre autres la caractérisation optique des filtres. Les limites de basses fréquences du système sont démontrées en effectuant des mesures sur un échantillon de soufre dont la raie à 27 cm-1 est clairement résolue. La simplicité d’accordabilité est quant à elle démontrée par l’utilisation d’un échantillon de NTC en poudre. En variant la longueur d’onde (l’énergie d’excitation), différentes chiralités sont observées et par le fait même, différentes raies sont présentes dans les spectres. Finalement, des précisions sur l’alignement, l’optimisation et l’opération du système sont décrites. La faible acceptance angulaire est l’inconvénient majeur de l’utilisation de ce type de filtre. Elle se répercute en problème d’atténuation ce qui est critique plus particulièrement pour le filtre coupe-bande. Des améliorations possibles face à cette limitation sont étudiées.

Methylene Blue Doped Polymers: efficient Media for Optical Recording

Polymer materials find application in optical storage technology, namely in the development of high information density and fast access type memories. A new polymer blend of methylene blue sensitized polyvinyl alcohol (PVA) and polyacrylic acid (PAA) in methanol is prepared and characterized and its comparison with methylene blue sensitized PVA in methanol and complexed methylene blue sensitized polyvinyl chloride (CMBPVC) is presented. The optical absorption spectra of the thin films of these polymers showed a strong and broad absorption region at 670-650 nm, matching the wavelength of the laser used. A very slow recovery of the dye on irradiation was observed when a 7:3 blend of polyvinyl alcohol/polyacrylic acid at a pHof 3.8 and a sensitizer concentration of 4.67 10 5 g/ml were used. A diffraction efficiency of up to 20% was observed for the MBPVA/alcohol system and an energetic sensitivity of 2000 mJ/cm2 was obtained in the photosensitive films with a spatial frequency of 588 lines/mm.

Growth and Characterisation of Radio Frequency Magnetron Sputttered Indium Tin Oxide Thin Films

The increasing interest in the interaction of light with electricity and electronically active materials made the materials and techniques for producing semitransparent electrically conducting films particularly attractive. Transparent conductors have found major applications in a number of electronic and optoelectronic devices including resistors, transparent heating elements, antistatic and electromagnetic shield coatings, transparent electrode for solar cells, antireflection coatings, heat reflecting mirrors in glass windows and many other. Tin doped indium oxide (indium tin oxide or ITO) is one of the most commonly used transparent conducting oxides. At present and likely well into the future this material offers best available performance in terms of conductivity and transmittivity combined with excellent environmental stability, reproducibility and good surface morphology. Although partial transparency, with a reduction in conductivity, can be obtained for very thin metallic films, high transparency and simultaneously high conductivity cannot be attained in intrinsic stoichiometric materials. The only way this can be achieved is by creating electron degeneracy in a wide bandgap (Eg > 3eV or more for visible radiation) material by controllably introducing non-stoichiometry and/or appropriate dopants. These conditions can be conveniently met for ITO as well as a number of other materials like Zinc oxide, Cadmium oxide etc. ITO shows interesting and technologically important combination of properties viz high luminous transmittance, high IR reflectance, good electrical conductivity, excellent substrate adherence and chemical inertness. ITO is a key part of solar cells, window coatings, energy efficient buildings, and flat panel displays. In solar cells, ITO can be the transparent, conducting top layer that lets light into the cell to shine the junction and lets electricity flow out. Improving the ITO layer can help improve the solar cell efficiency. A transparent ii conducting oxide is a material with high transparency in a derived part of the spectrum and high electrical conductivity. Beyond these key properties of transparent conducting oxides (TCOs), ITO has a number of other key characteristics. The structure of ITO can be amorphous, crystalline, or mixed, depending on the deposition temperature and atmosphere. The electro-optical properties are a function of the crystallinity of the material. In general, ITO deposited at room temperature is amorphous, and ITO deposited at higher temperatures is crystalline. Depositing at high temperatures is more expensive than at room temperature, and this method may not be compatible with the underlying devices. The main objective of this thesis work is to optimise the growth conditions of Indium tin oxide thin films at low processing temperatures. The films are prepared by radio frequency magnetron sputtering under various deposition conditions. The films are also deposited on to flexible substrates by employing bias sputtering technique. The films thus grown were characterised using different tools. A powder x-ray diffractometer was used to analyse the crystalline nature of the films. The energy dispersive x-ray analysis (EDX) and scanning electron microscopy (SEM) were used for evaluating the composition and morphology of the films. Optical properties were investigated using the UVVIS- NIR spectrophotometer by recording the transmission/absorption spectra. The electrical properties were studied using vander Pauw four probe technique. The plasma generated during the sputtering of the ITO target was analysed using Langmuir probe and optical emission spectral studies.

Methylene Blue Doped Polymers:Efficient Media for Optical Recording

Polymer materials find application in optical storage technology, namely in the development of high information density and fast access type memories. A new polymer blend of methylene blue sensitized polyvinyl alcohol (PVA) and polyacrylic acid (PAA) in methanol is prepared and characterized and its comparison with methylene blue sensitized PVA in methanol and complexed methylene blue sensitized polyvinyl chloride (CMBPVC) is presented. The optical absorption spectra of the thin films of these polymers showed a strong and broad absorption region at 670-650 nm, matching the wavelength of the laser used. A very slow recovery of the dye on irradiation was observed when a 7:3 blend of polyvinyl alcohol/polyacrylic acid at a pHof 3.8 and a sensitizer concentration of 4.67 10 5 g/ml were used. A diffraction efficiency of up to 20% was observed for the MBPVA/alcohol system and an energetic sensitivity of 2000 mJ/cm2 was obtained in the photosensitive films with a spatial frequency of 588 lines/mm.

Single-feed dual-frequency dual-polarized slotted square microstrip antenna

A novel dual frequency dual-polarized square microstrip patch antenna embedded with a slot is presented. The proposed antenna offers tunability of the frequency ratio between the two frequencies by adjusting the slot dimensions. This configuration also provides a size reduction up to -51 and 35% for the two modes as compared to a square micro strip patch antenna

Slot-Loaded Compact Microstrip Antenna for Dual-Frequency Operation

Dual frequency operation is achieved from a compact microstrip antenna by loading a pair of narrow slots close to its radiating edges. The two frequencies have parallel polarization planes and similar radiation characteristics. The ratio between the two operating frequencies can be tuned in the range (1.14-1. 24), which is much smaller than that of similar designs. The above excellent radiation characteristics are achieved along with an area reduction of - 75% compared to the standard rectangular patch

Tunnel-Based Artificial Neural Network Technique to Calculate the Resonant Frequency of a Thick-Substrate Microstrip Antenna

The mathematical formulation of empirically developed formulas Jirr the calculation of the resonant frequency of a thick-substrate (h s 0.08151 A,,) microstrip antenna has been analyzed. With the use qt' tunnel-based artificial neural networks (ANNs), the resonant frequency of antennas with h satisfying the thick-substrate condition are calculated and compared with the existing experimental results and also with the simulation results obtained with the use of an IE3D software package. The artificial neural network results are in very good agreement with the experimental results

A Compact Novel Slot-Loaded Dual-Frequency H-Shaped Antenna

A novel compact single-layer dual frequency microstrip antenna which uses an H-shaped geometry with two U-shaped slots embedded near the radiation edges, is presented. By changing the design parameters, the lower and higher resonant frequencies can be controlled easily, and a range of frequency ratios (1.716-2.363) can be obtained in this design. For the two operating frequencies of the proposed antenna, the same polarization planes and broadside radiation patterns are achieved. Compared to the regular dualfrequency patch antenna, this antenna can realize a significant size reduction

A reconfiguration dual-frequency slot-loaded microstrip antenna controlled by pin diodes

A novel reconfigurable, single feed, dual frequency, dualpolarized operation of a hexagonal slot-loaded square mwrostrip antenna is presented in this paper. A pin diode incorporated in the slot is used to switch the two operating frequencies considerably, without significantly affecting the radiation characteristics and gain. The proposed antenna provides a size reduction up to 61% and 26% Jor the two resonating frequencies, compared to standard rectangular patches. This design also gives considerable bandwidth up to 3.3% and 4.27%, for the two frequencies with a low operating frequency ratio

Development of a varactor -controlled dual-frequency reconfigurable microstrip antenna

A new design for a compact electronically reconffgurable singlefeed dual frequency dual-polarized operation of a square-microstrip antenna capable of achieving tunable frequency ratios in the range 1.1 to 1.37 is proposed and experimentally studied. Varactor diodes inlegruted with the arms of the hexagonal slot and embedded in the square patch are used to tune the operating frequencies by applying reverse-bias voltage. The design has the advantage of size reduction up to 73.21% and 49.86% for the two resonant frequencies, respectively, as compared to standard rectangular patches. The antenna offers good bandwidth of 5.74% and 5.36% for the two operating frequencies. A highly simplified tuning circuitry without any transmission lines adds to the compactness of the design

A Compact Electronically Reconfigurable Dual Frequency Microstrip Antenna for L-Band Applications

A novel design of a computer electronically reconfigurable dual frequency dual polarized single feed hexagonal slot loaded microstrip antenna in L-band is introduced in this chapter. pin diodes are used to switch the operating frequencies considerably without much affecting the radiation characteristics and gain. the antenna can work with a frequency ratio varying in the wide range from 1.2 to 1.4. the proposed design has an added advantage of size reduction up to 72.21% and 46.84% for the two resonating frequencies compared to standard rectangular patches. the design also gives considerable bandwidth of up to 2.82% and 2.42 % for the operating frequencies.