A low-cost intelligent gas sensing device for military applications

The field of electronic noses and gas sensing has been developing rapidly since the introduction of the silicon based sensors. There are numerous systems that can detect and indicate the level of a specific gas. We introduce here a system that is low power, small and cheap enough to be used in mobile robotic platforms while still being accurate and reliable enough for confident use. The design is based around a small circuit board mounted in a plastic case with holes to allow the sensors to protrude through the top and allow the natural flow of gas evenly across them. The main control board consists of a microcontroller PCB with surface mount components for low cost and power consumption. The firmware of the device is based on an algorithm that uses an Artificial Neural Network (ANN) which receives input from an array of gas sensors. The various sensors feeding the ANN allow the microcontroller to determine the gas type and quantity. The Testing of the device involves the training of the ANN with a number of different target gases to determine the weightings for the ANN. Accuracy and reliability of the ANN is validated through testing in a specific gas filled environment.

A head mountable deep brain stimulation device for laboratory animals

Deep brain stimulation has emerged as an effective method to treat certain medical conditions. Electrical charges are injected into the target tissue through a conducting electrode exciting the tissue. A variety of DBS devices have been developed based on different operation principles. Majority of these devices, however, employ complex circuitry and are bulky. In clinical trials, laboratory animals need to freely move around and perform activities whilst receiving brain stimulation for days. This paper presents a simple lightweight head mountable deep brain stimulation device that can be carried by the animal during the course of a clinical trial. The device produces continuous current pulses of specific characteristics. It employs passive charge balancing to minimize undesirable effects on the target tissue. The device is constructed and its performance tested.

A 2kW interleaved ZCS-FM boost rectifier digitally controlled by FPGA device

This paper presents a 2kW single-phase high power factor boost rectifier with four cells in interleave connection, operating in critical conduction mode, and employing a soft-switching technique, controlled by Field Programmable Gate Array (FPGA). The soft-switching technique Is based on zero-current-switching (ZCS) cells, providing ZC (zero-current) turn-on and ZCZV (zero-current-zero-voltage) turn-off for the active switches, and ZV (zero-voltage) turn-on and ZC (zero-current) turn-off for the boost diodes. The disadvantages related 'to reverse recovery effects of boost diodes operated in continuous conduction mode (additional losses, and electromagnetic interference (EMI) problems) are minimized, due to the operation in critical conduction mode. In addition, due to the Interleaving technique, the rectifer's features include the reduction in the input current ripple, the reduction in the output voltage ripple, the use of low stress devices, low volume for the EMI input filter, high input power factor (PF), and low total harmonic distortion (THD) In the input current, in compliance with the TEC61000-3-2 standards. The digital controller has been developed using a hardware description language (VHDL) and implemented using a XC2S200E-SpartanII-E/Xilinx FPGA device, performing a true critical conduction operation mode for four interleaved cells, and a closed-loop to provide the output voltage regulation, like as a pre-regulator rectifier. Experimental results are presented for a 2kW implemented prototype with four interleaved cells, 400V nominal output voltage and 220V(rms) nominal input voltage, in order to verify the feasibility and performance of the proposed digital control through the use of a FPGA device.

Hybrid three-phase HPF rectifier with programmable input current THD, using FPGA device and VHDL language

In this paper is proposed and analyzed a digital hysteresis modulation using a FPGA (Field Programmable Gate Array) device and VHDL (Hardware Description Language), applied at a hybrid three-phase rectifier with almost unitary input power factor, composed by parallel SEPIC controlled single-phase rectifiers connected to each leg of a standard 6-pulses uncontrolled diode rectifier. The digital control allows a programmable THD (Total Harmonic Distortion) at the input currents, and it makes possible that the power rating of the switching-mode converters, connected in parallel, can be a small fraction of the total average output power, in order to obtain a compact converter, reduced input current THD and almost unitary input power factor. Finally, the proposed digital control, using a FPGA device and VHDL, offers an important flexibility for the associated control technique, in order to obtain a programmable PFC (Power Factor Correction) hybrid three-phase rectifier, in agreement with the international standards (IEC, and IEEE), which impose limits for the THD of the AC (Alternate Current) line input currents. The proposed strategy is verified by experiments. © 2008 IEEE.

A novel device with 36 channels for imaging and signal acquisition of the gastrointestinal tract based on AC biosusceptometry

The alternate current biosusceptometry (ACB) is a biomagnetic technique used to study some physiological parameters associated with gastrointestinal (GI) tract. For this purpose it applies an AC magnetic field and measures the response originating from magnetic marks or tracers. This paper presents an equipment based on the ACB which uses anisotropic magnetoresistive (AMR) sensors and an inexpensive electronic support. The ACB-AMR developed consists of a square array of 6x6 sensors arranged in a firstorder gradiometer configuration with one reference sensor. The equipment was applied to capture magnetic images of different phantoms and to acquire gastric contraction activity of healthy rats. The results show a reasonable sensitivity and spatial-temporal resolution, so that it may be applied for imaging of phantoms and signal acquisition of the GI tract of small animals. © 2010 IEEE.

Natural-rubber-based flexible microfluidic device

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Capacitive DNA detection driven by electronic charge fluctuations in a graphene nanopore

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Microfluidic electronic tongue

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Multifunctional current reference generation strategy for grid-tied power electronic converter

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

HIGH TEMPERATURE RARE EARTH COMPOUNDS: SYNTHESIS, CHARACTERIZATION AND APPLICATIONS IN DEVICE FABRICATION

As the area of nanotechnology continues to grow, the development of new nanomaterials with interesting physical and electronic properties and improved characterization techniques are several areas of research that will be remain vital for continued improvement of devices and the understanding in nanoscale phenomenon. In this dissertation, the chemical vapor deposition synthesis of rare earth (RE) compounds is described in detail. In general, the procedure involves the vaporization of a REClx (RE = Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho) in the presence of hydride phase precursors such as decaborane and ammonia at high temperatures and low pressures. The vapor-liquid-solid mechanism was used in combination with the chemical vapor deposition process to synthesize single crystalline rare earth hexaboride nanostructures. The crystallographic orientation of as-synthesized rare earth hexaboride nanostructures and gadolinium nitride thin films was controlled by judicious choice of specific growth substrates and modeled by analyzing x-ray diffraction powder patterns and crystallographic models. The rare earth hexaboride nanostructures were then implemented into two existing technologies to enhance their characterization capabilities. First, the rare earth hexaboride nanowires were used as a test material for the development of a TEM based local electrode atom probe tomography (LEAP) technique. This technique provided some of the first quantitative compositional information of the rare earth hexaboride systems. Second, due to the rigidity and excellent conductivity of the rare earth hexaborides, nanostructures were grown onto tungsten wires for the development of robust, oxidation resistant nanomanipulator electronic probes for semiconductor device failure analysis.

Light emission and current rectification in a molecular device: Experiment and theory

We have investigated optical and transport properties of the molecular structure 2,3,4,5-tetraphenyl-1-phenylethynyl-cyclopenta-2,4-dienol experimentally and theoretically. The optical spectrum was calculated using Hartree-Fock-intermediate neglect of differential overlap-configuration interaction model. The experimental photoluminescence spectrum showed a peak around 470nm which was very well described by the modeling. Electronic transport measurements showed a diode-like effect with a strong current rectification. A phenomenological microscopic model based on non-equilibrium Green's function technique was proposed and a very good description electronic transport was obtained. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767457]

Performance of electronic devices submitted to X-rays and high energy proton beams

In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 key X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangular-gate transistor and circular-gate transistor. We have observed the cumulative dose provokes shifts on the threshold voltage and increases or decreases the transistor's off-state and leakage current. The position of the trapped charges in modern CMOS technology devices depends on radiation type, dose rate, total dose, applied bias and is a function of device geometry. We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor. (C) 2011 Elsevier B.V. All rights reserved.

Development of heat sink device by using topology optimization

Small scale fluid flow systems have been studied for various applications, such as chemical reagent dosages and cooling devices of compact electronic components. This work proposes to present the complete cycle development of an optimized heat sink designed by using Topology Optimization Method (TOM) for best performance, including minimization of pressure drop in fluid flow and maximization of heat dissipation effects, aiming small scale applications. The TOM is applied to a domain, to obtain an optimized channel topology, according to a given multi-objective function that combines pressure drop minimization and heat transfer maximization. Stokes flow hypothesis is adopted. Moreover, both conduction and forced convection effects are included in the steady-state heat transfer model. The topology optimization procedure combines the Finite Element Method (to carry out the physical analysis) with Sequential Linear Programming (as the optimization algorithm). Two-dimensional topology optimization results of channel layouts obtained for a heat sink design are presented as example to illustrate the design methodology. 3D computational simulations and prototype manufacturing have been carried out to validate the proposed design methodology.

Microfluidic device and interfacial transport: application to biomolecules and nanostructures

The aim of my dissertation is to provide new knowledge and applications of microfluidics in a variety of problems, from materials science, devices, and biomedicine, where the control on the fluid dynamics and the local concentration of the solutions containing the relevant molecules (either materials, precursors, or biomolecules) is crucial. The control of interfacial phenomena occurring in solutions at dierent length scales is compelling in nanotechnology for devising new sensors, molecular electronics devices, memories. Microfluidic devices were fabricated and integrated with organic electronics devices. The transduction involves the species in the solution which infills the transistor channel and confined by the microfluidic device. This device measures what happens on the surface, at few nanometers from the semiconductor channel. Soft-lithography was adopted to fabricate platinum electrodes, starting from platinum carbonyl precursor. I proposed a simple method to assemble these nanostructures in periodic arrays of microstripes, and form conductive electrodes with characteristic dimension of 600 nm. The conductivity of these sub-microwires is compared with the values reported in literature and bulk platinum. The process is suitable for fabricating thin conductive patterns for electronic devices or electrochemical cells, where the periodicity of the conductive pattern is comparable with the diusion length of the molecules in solution. The ordering induced among artificial nanostructures is of particular interest in science. I show that large building blocks, like carbon nanotubes or core-shell nanoparticles, can be ordered and self-organised on a surface in patterns due to capillary forces. The eective probability of inducing order with microfluidic flow is modeled with finite element calculation on the real geometry of the microcapillaries, in soft-lithographic process. The oligomerization of A40 peptide in microconfined environment represents a new investigation of the extensively studied peptide aggregation. The added value of the approach I devised is the precise control on the local concentration of peptides together with the possibility to mimick cellular crowding. Four populations of oligomers where distinguished, with diameters ranging from 15 to 200 nm. These aggregates could not be addresses separately in fluorescence. The statistical analysis on the atomic force microscopy images together with a model of growth reveal new insights on the kinetics of amyloidogenesis as well as allows me to identify the minimum stable nucleus size. This is an important result owing to its implications in the understanding and early diagnosis and therapy of the Alzheimer’s disease

Control of the long-range self-organization of polycyclic aromatic hydrocarbons for device applications

Electronic devices based on organic semiconductors have gained increased attention in nanotechnology, especially applicable to the field of field-effect transistors and photovoltaic. A promising class of materials in this reseach field are polycyclic aromatic hydrocarbons (PAHs). Alkyl substitution of these graphenes results in the selforganization into one-dimensional columnar superstructures and provides solubility and processibility. The nano-phase separation between the π-stacking aromatic cores and the disordered peripheral alkyl chains leads to the formation of thermotropic mesophases. Hexa-peri-hexabenzocoronenes (HBC), as an example for a PAH, exhibits some of the highest values for the charge carrier mobility for mesogens, which makes them promising candidates for electronic devices. Prerequisites for efficient charge carrier transport between electrodes are a high purity of the material to reduce possible trapping sites for charge carriers and a pronounced and defect-free, long-range order. Appropriate processing techniques are required to induce a high degree of aligned structures in the discotic material over macroscopic dimensions. Highly-ordered supramolecular structures of different discotics, in particular, of HBC derivatives have been obtained by solution processing using the zone-casting technique, zone-melting or simple extrusion. Simplicity and fabrication of highly oriented columnar structures over long-range are the most essential advantages of these zone-processing methods. A close relation between the molecular design, self-aggregation and the processing conditions has been revealed. The long-range order achieved by the zone-casting proved to be suitable for field effect transistors (FET).