975 resultados para crystal structure and surface morphology
Resumo:
The synthesis and crystal structure of a novel one-dimensional Cu(II) compound [Cu(1,2-bis(tetrazol-1-yl)ethane)3](ClO4)2 are described. The single-crystal X-ray structure determination was carried out at 298 K. The molecular structure consists of a linear chain in which the Cu(II) ions are linked by three N4,N4' coordinating bis(tetrazole) ligands in syn conformation. The Cu(II) ions are in a Jahn-Teller distorted octahedral environment (Cu(1)-N(11)=2.034(2) Å, Cu(1)-N(21)=2.041(2) Å and Cu(1)-N(31)=2.391(2) Å). The Cu⋯Cu separations are 7.420(3) Å.
Resumo:
Peer reviewed
Resumo:
Peer reviewed
Resumo:
Methyl tetra-O-acetyl-β-d-glucopyranuronate (1) and methyl tetra-O-acetyl-α-d-glucopyranuronate (3) were isolated as crystalline solids and their crystal structures were obtained. That of the β anomer (1) was the same as that reported by Root et al., while anomer (3) was found to crystallise in the orthorhombic space group P212121 with two independent molecules in the asymmetric unit. No other crystal forms were found for either compound upon recrystallisation from a range of solvents. The α anomer (3) was found to be an impurity in initially precipitated batches of β-anomer (1) in quantities <3%; however, it was possible to remove the α impurity either by recrystallisation or by efficient washing, i.e. the α anomer is not incorporated inside the β anomer crystals. The β anomer (1) was found to grow as prisms or needles elongated in the a crystallographic direction in the absence of the α impurity, while the presence of the α anomer (3) enhanced this elongation.
Resumo:
Single crystal GaN films of hexagonal modification have been fabricated on Al2O3/Si (001) substrates via a low pressure metalorganic chemical deposition (LP-MOCVD) method. The full width at half-maximum of (0002) X-ray diffraction peak for the GaN film 1.1 mu m thick was 72 arcmin. and the mosaic structure of the film was the main cause of broadening to the X-ray diffraction peak. Al room temperature, the photoluminescence (PL) spectrum of GaN exhibited near band edge emission peaking at 365 nm.
Resumo:
A systematic study was made of the synthesis of V(2)O(5)center dot nH(2)O nanostructures, whose morphologies, crystal structure, and amount of water molecules between the layered structures were regulated by strictly controlling the hydrothermal treatment variables. The synthesis involved a direct hydrothermal reaction between V(2)O(5) and H(2)O(2), without the addition of organic surfactant or inorganic ions. The experimental results indicate that high purity nanostructures can be obtained using this simple and clean synthetic route. Oil the basis of a study of hydrothermal treatment variables such as reaction temperature and time, X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) revealed that it was possible to obtain nanoribbons of the V(2)O(5)center dot nH(2)O monoclinic phase and nanowires or nanorods of the V(2)O(5)center dot nH(2)O orthorhombic phase. Thermal gravimetric analysis (TGA) shows also that the water content in the Structure call be controlled at appropriate hydrothermal conditions. Concerning the oxidation state of the vanadium atoms of as-obtained samples, a mixed-valence state composed of V(4+) and V(5+) was observed ill the V(2)O(5)center dot nH(2)O monoclinic phase, while the valence of the vanadium atoms was preferentially 5+ in the V(2)O(5)center dot nH(2)O orthorhombic phase. The X-ray absorption near-edge structure (XANES) results also indicated that the local structure of vanadium possessed a higher degree of symmetry in the V(2)O(5)center dot nH(2)O monoclinic phase.
Resumo:
MnSb/porous silicon hybrid structure was prepared by physical vapor deposition technique. The structure and surface morphology of the MnSb films were analyzed by X-ray diffraction and scanning electron microscope, respectively. The magnetic hysteresis loops were obtained by an alternative gradient magnetometer. Based on the measurements, only MnSb phase was found and the surface morphology was rough and island-like. MnSb thin films show ferromagnetism at room temperature. (C) 2003 Elsevier B.V. All rights reserved.
Resumo:
Based on experimental results and theoretical analysis effects of the crystal structure on the optical and electrical properties of pyrite FeS2 films produced by thermally sulfurizing iron films at various temperatures have been systematically studied. The results indicate that the crystal structure and some related factors, such as the crystallization and the stoichiometry, remarkably influence the optical and electrical performances of the pyrite films. It is also shown that the preferred orientation of the crystal grain plays a major role in determining the crystal structure and the optical and electrical properties of the pyrite FeS2 films. Also we find that it is the crystal grains, rather than the particles that exercise a decisive influence on the electrical performance of pyrite films. (C) 2003 Elsevier Science B.V. All rights reserved.
Resumo:
Landscape evolution and surface morphology in mountainous settings are a function of the relative importance between sediment transport processes acting on hillslopes and in channels, modulated by climate variables. The Niesen nappe in the Swiss Penninic Prealps presents a unique setting in which opposite facing flanks host basins underlain by identical lithologies, but contrasting litho-tectonic architectures where lithologies either dip parallel to the topographic slope or in the opposite direction (i.e. dip slope and non-dip slope). The north-western facing Diemtigen flank represents such a dip slope situation and is characterized by a gentle topography, low hillslope gradients, poorly dissected channels, and it hosts large landslides. In contrast, the south-eastern facing Frutigen side can be described as non-dip slope flank with deeply incised bedrock channels, high mean hillslope gradients and high relief topography. Results from morphometric analysis reveal that noticeable differences in morphometric parameters can be related to the contrasts in the relative importance of the internal hillslope-channel system between both valley flanks. While the contrasting dip-orientations of the underlying flysch bedrock has promoted hillslope and channelized processes to contrasting extents and particularly the occurrence of large landslides on the dip slope flank, the flank averaged beryllium-10 (10Be)-derived denudation rates are very similar and range between 0.20 and 0.26 mm yr−1. In addition, our denudation rates offer no direct relationship to basin's slope, area, steepness or concavity index, but reveal a positive correlation to mean basin elevation that we interpret as having been controlled by climatically driven factors such as frost-induced processes and orographic precipitation. Our findings illustrate that while the landscape properties in this part of the northern Alpine border can mainly be related to the tectonic architecture of the underlying bedrock, the denudation rates have a strong orographic control through elevation dependent mean annual temperature and precipitation.
Resumo:
The Zn-CeO 2 composite coatings through electrodeposition technique were successfully fabricated on mild steel substrate. As a comparison pure zinc coating was also prepared. The concentration of CeO 2 nanoparticles was varied in the electrolytic bath and the composites were electrodeposited both in the presence and absence of cetyltriammonium bromide (CTAB). The performance of the CeO 2 nanoparticles towards the deposition, crystal structure, texture, surface morphology and electrochemical corrosion behavior was studied. For characterizations of the electrodeposits, the techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM) were used. Both the additives ceria and surfactant polarize the reduction processes and thus influence the deposition process, surface nature and the electrochemical properties. The electrochemical experiments like potentiodynamic polarization and electrochemical impedance spectroscopic (EIS) studies carried out in 3.5 wt. NaCl solution explicit higher corrosion resistance by CeO 2 incorporated coating in the presence of surfactant. © 2012 Elsevier B.V. All rights reserved.
Resumo:
Schottky barrier devices of metal/semiconductor/metal structure were fabricated using organic semiconductor polyaniline (PANI) and aluminium thin film cathode. Aluminium contacts were made by thermal evaporation technique using two different forms of metals (bulk and nanopowder). The structure and surface morphology of these films were investigated by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Grain size of the as-deposited films obtained by Scherrer's method, modified Williamson-Hall method, and SEM were found to be different. Current-voltage (I-V) characteristic of Schottky barrier device structure indicates that the calculated current density (J) for device fabricated from aluminium nanopowder is more than that from aluminium in bulk form.
Resumo:
Colloidal crystals formed by two types of polystyrene particles of different sizes (94 and 141 nm) at various number ratios (94:141 nm) are studied. Experiments showed that the formation time of crystals lengthens as the number ratio of the two components approaches 1:1. The dependence of the mean interparticle distance (D-0), crystal structure and alloy structure on the number ratio of the two types of particles was Studied by means of Kossel diffraction technique and reflection spectra. The results showed that as the number ratio decreased, the mean interparticle distance (D-0) became larger. And the colloidal crystal in binary mixtures is more preferably to form the bcc structure. This study found that binary systems form the substitutional solid solution (sss)-type alloy structure in all cases except when the number ratio of two types of particles is 5:1, which results instead in the superlattice structure. (C) 2008 Elsevier Inc. All rights reserved.
Resumo:
Gd1.99-xYxCe0.01SiO5 (Ce:GYSO) crystals (x = 0, 0.0995, 0.199) have been grown by the Czochralski (Cz) method. Crystal structure and the distribution coefficients of Ce have been determined for all three crystals. Spectroscopic measurements indicate that optical transmittance and luminescence intensity of Gd1.99-xYxCe0.01SiO5 (x = 0.0995, 0.199) crystals are Substantially higher than those of Ce:Gd2SiO5 (Ce:GSO), especially at x = 0.0995, which makes them good candidate materials for scintillation applications. The particularly important result is that the alloyed Ce:GYSO crystals can be grown easily by the Cz method and, unlike Ce:GSO, they do not undergo cleavage during the growth process or subsequent mechanical treatment. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
Quality ZnO films were successfully grown on Si(100) substrate by low-pressure metal organic chemical vapor deposition method in temperature range of 300-500 degrees C using DEZn and N2O as precursor and oxygen source respectively. The crystal structure, optical properties and surface morphology of ZnO films were characterized by X-ray diffraction, optical refection and atomic force microscopy technologies. It was demonstrated that the crystalline structure and surface morphology of ZnO films strongly depend on the growth temperature.
Resumo:
The crystal structure and liquid crystalline properties of a biphenyl-containing acetylene, [5-[(4'-heptoxy-4- biphenylyl) carbonyloxy]-1-pentyne (A3EO7) were investigated by electron crystallography, X-ray diffraction, polarizing optical microscopy, differential scanning calorimetry, transmission electron microscopy, and atomic force microscopy. A3EO7 crystals obtained from a toluene solution adopts a monoclinic P112/m space group with unit cell parameters of a = 6.25 Angstrom, b = 7.82 Angstrom, c = 46.70 Angstrom and gamma = 96.7degrees, as determined using electron diffraction. Upon cooling from the isotropic phase, A3EO7 exhibits a smectic A phase in the temperature range 72.4 - 53.6degreesC. Further lowering of the temperature results in the formation of a smectic C phase which exhibits a strong tendency towards crystallization.