Challenges of in situ conservation of crop wild relatives

Crop wild relatives (CWRs) will gain in importance as changing climates put both traditional and advanced cultivars under increasing stress, leading to a need for plant breeding to produce new varieties able to grow under the new climate regimes. Traditionally, the approach to the conservation of CWRs has been ex situ - the collection and maintenance of seed accessions in national, regional, and international germplasm banks, supplemented by field genebanks for species with recalcitrant seeds. More recently the need to maintain CWRs in their natural habitats (in situ) has been advocated. This is very different from on-farm conservation of traditional land races and is a complex multidisciplinary process. Particular problems that have to be addressed include the adoption of a workable definition of what is a CWR, application of priority-determining mechanisms because of the large number of candidate species of CWRs, assessment of the effectiveness of conservation approaches, the relative costs of in situ and ex situ approaches, integration of CWR in situ conservation into national programmes, and the challenges posed by global change. CWRs may be conserved in both protected and non-protected areas. Presence in the former is no guarantee of their survival and in most cases some degree of management intervention is required. Experience derived from recent EU- and GEF-funded CWR conservation initiatives will be drawn upon.

Polimerização de propeno com catalisadores metalocênicos via suportação in-situ utilizando SMAO como suporte

Os catalisadores metalocênicos Me2Si(Ind)2ZrCl2 e Me2Si(2-Me-Ind)2ZrCl2 foram suportados in-situ sobre SMAO e empregados na polimerização de propeno na presença de alquilalumínios tais como TEA, IPRA ou TIBA. Os resultados obtidos demonstraram que o tipo e a concentração de alquilalumínio presente no meio reacional influenciaram tanto a atividade catalítica quanto as propriedades dos polímeros gerados. Os polímeros obtidos com o catalisador suportado in-situ apresentaram propriedades distintas das obtidas no polímero gerado através da polimerização homogênea, além de morfologia controlada, confirmando que de fato a polimerização ocorreu sobre a superfície do SMAO. Através da deconvolução das curvas de GPC foi constatado o aumento do número de tipos de sítios ativos no sistema catalítico suportado in-situ, resultado que também confirmou a heterogeneização do catalisador sobre o suporte. Com o auxílio de cálculos teóricos e da deconvolução das curvas de GPC foi possível propor estruturas para os sítios ativos dos sistemas homogêneo metaloceno/MAO e heterogêneo (suportado in-situ) metaloceno/SMAO/alquilalumínio. Quando eteno foi utilizado como monômero, o comportamento do sistema catalítico metaloceno/SMAO/alquilalumínio suportado in-situ foi distinto do obtido com propeno. O catalisador Me2Si(Ind)2ZrCl2 suportado ex-situ sobre SMAO através de técnicas convencionais de suportação foi avaliado por EXAFS e foi constatado que a vizinhança eletrônica do zircônio é influenciada pela razão Zr/SMAO. Os resultados obtidos por EXAFS foram correlacionados com a variação na atividade catalítica na polimerização de eteno em função da alteração na razão Zr/SMAO.

Fenologia reprodutiva e produção de sementes em Araucaria angustifolia (Bert.) O. Kuntze

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Estimulação ovariana, recuperação e maturação de oócitos de veado-catingueiro (Mazama gouazoubira)

Pós-graduação em Medicina Veterinária - FCAV

Protocolos de superovulação em veado-catingueiro (Mazama gouazoubira)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Espécies arbóreas que ocorrem na região do Bolsão Sul-Mato-Grossense e variação genética para caracteres silviculturais em um teste de progênies com três espécies em consórcio

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Variação genética para caracteres silviculturais em banco ativo de germoplasma de espécies arbóreas do cerrado e da floresta estacional semidecidual

Pós-graduação em Agronomia - FEIS

Variação genética para os caracteres fisiológicos, bioquímicos e nutricionais em sementes de uma população base de Myracrodruon urundeuva procedente de Aquidauana-MS

Pós-graduação em Agronomia - FEIS

Fluxo gênico, estrutura genética espacial intrapopulacional e sistema de reprodução hierárquico entre e dentro de frutos em uma pequena população isolada de Genipa americana L., utilizando marcadores microssatélites

Pós-graduação em Agronomia - FEIS

Distribution, management and diversity of the endangered Amerindian yam (Dioscorea trifida L.)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Molecular detection of enteropathogenic Escherichia coli in asymptomatic captive psittacines

Psittaciformes are one of the most endangered groups of birds, and several Brazilian species are classified between vulnerable and critically endangered. It is thus necessary to identify agents that cause infections in captive wild animals and to assess the risks posed thereof and to design interventions to minimize the possibility of disease outbreaks, leading to the conservation of endangered species. The purpose of this study was to identify enteropathogenic Escherichia coli (EPEC) cloacal isolates from asymptomatic psittacines in captivity and evaluate the distribution of the EPEC pathotype. Cloacal swabs were obtained from 46 asymptomatic birds, and resulting isolates were tested by polymerase chain reaction (PCR) for the presence of the attaching and effacing gene (eae) and bundle-forming pilus structural gene (bfpA) of EPEC. Samples from several species were tested, and three samples were found to be positive for the eae and bfpA genes and characterized as typical EPEC. This is the first report of this pathotype in asymptomatic psittacines. Although certain E. coli strains are more pathogenic than others, various factors should be considered when determining the potential of E. coli isolates to cause disease in captive psittacines. Birds that are positive for the EPEC (typical) strain could be zoonotic sources of infection, and may have acquired these strains through contact with humans or domestic animals. These findings may also be valuable for the long-term management of endangered species ex situ as one EPEC sample was isolated from a Red-tailed Amazon (Amazona brasiliensis).

In situ real-time investigation of Organic Ultra-Thin-Film transistors: growth, electrical properties and biosensing applications

Organic electronics has grown enormously during the last decades driven by the encouraging results and the potentiality of these materials for allowing innovative applications, such as flexible-large-area displays, low-cost printable circuits, plastic solar cells and lab-on-a-chip devices. Moreover, their possible field of applications reaches from medicine, biotechnology, process control and environmental monitoring to defense and security requirements. However, a large number of questions regarding the mechanism of device operation remain unanswered. Along the most significant is the charge carrier transport in organic semiconductors, which is not yet well understood. Other example is the correlation between the morphology and the electrical response. Even if it is recognized that growth mode plays a crucial role into the performance of devices, it has not been exhaustively investigated. The main goal of this thesis was the finding of a correlation between growth modes, electrical properties and morphology in organic thin-film transistors (OTFTs). In order to study the thickness dependence of electrical performance in organic ultra-thin-film transistors, we have designed and developed a home-built experimental setup for performing real-time electrical monitoring and post-growth in situ electrical characterization techniques. We have grown pentacene TFTs under high vacuum conditions, varying systematically the deposition rate at a fixed room temperature. The drain source current IDS and the gate source current IGS were monitored in real-time; while a complete post-growth in situ electrical characterization was carried out. At the end, an ex situ morphological investigation was performed by using the atomic force microscope (AFM). In this work, we present the correlation for pentacene TFTs between growth conditions, Debye length and morphology (through the correlation length parameter). We have demonstrated that there is a layered charge carriers distribution, which is strongly dependent of the growth mode (i.e. rate deposition for a fixed temperature), leading to a variation of the conduction channel from 2 to 7 monolayers (MLs). We conciliate earlier reported results that were apparently contradictory. Our results made evident the necessity of reconsidering the concept of Debye length in a layered low-dimensional device. Additionally, we introduce by the first time a breakthrough technique. This technique makes evident the percolation of the first MLs on pentacene TFTs by monitoring the IGS in real-time, correlating morphological phenomena with the device electrical response. The present thesis is organized in the following five chapters. Chapter 1 makes an introduction to the organic electronics, illustrating the operation principle of TFTs. Chapter 2 presents the organic growth from theoretical and experimental points of view. The second part of this chapter presents the electrical characterization of OTFTs and the typical performance of pentacene devices is shown. In addition, we introduce a correcting technique for the reconstruction of measurements hampered by leakage current. In chapter 3, we describe in details the design and operation of our innovative home-built experimental setup for performing real-time and in situ electrical measurements. Some preliminary results and the breakthrough technique for correlating morphological and electrical changes are presented. Chapter 4 meets the most important results obtained in real-time and in situ conditions, which correlate growth conditions, electrical properties and morphology of pentacene TFTs. In chapter 5 we describe applicative experiments where the electrical performance of pentacene TFTs has been investigated in ambient conditions, in contact to water or aqueous solutions and, finally, in the detection of DNA concentration as label-free sensor, within the biosensing framework.

Point defects in carbon nanostructures studied by in-situ electron microscopy

In the present work, the formation and migration of point defects induced by electron irradiation in carbon nanostructures, including carbon onions, nanotubes and graphene layers, were investigated by in-situ TEM. The mobility of carbon atoms normal to the layers in graphitic nanoparticles, the mobility of carbon interstitials inside SWCNTs, and the migration of foreign atoms in graphene layers or in layers of carbon nanotubes were studied. The diffusion of carbon atoms in carbon onions was investigated by annealing carbon onions and observing the relaxation of the compressed clusters in the temperature range of 1200 – 2000oC. An activation energy of 5.0±0.3 eV was obtained. This rather high activation energy for atom exchange between the layers not only prevents the exchange of carbon atoms between the layers at lower temperature but also explains the high morphological and mechanical stability of graphite nanostructures. The migration of carbon atoms in SWCNTs was investigated quantitatively by cutting SWCNT bundles repeatedly with a focused electron beam at different temperatures. A migration barrier of about 0.25 eV was obtained for the diffusion of carbon atoms inside SWCNTs. This is an experimental confirmation of the high mobility of interstitial atoms inside carbon nanotubes, which corroborates previously developed theoretical models of interstitial diffusivity. Individual Au and Pt atoms in one- or two-layered graphene planes and MWCNTs were monitored in real time at high temperatures by high-resolution TEM. The direct observation of the behavior of Au and Pt atoms in graphenic structures in a temperature range of 600 – 700°C allows us to determine the sites occupied by the metal atoms in the graphene layer and the diffusivities of the metal atoms. It was found that metal atoms were located in single or multiple carbon vacancies, not in off-plane positions, and diffused by site exchange with carbon atoms. Metal atoms showed a tendency to form clusters those were stable for a few seconds. An activation energy of around 2.5 eV was obtained for the in-plane migration of both Au and Pt atoms in graphene (two-dimensional diffusion). The rather high activation energy indicates covalent bonding between metal and carbon atoms. Metal atoms were also observed to diffuse along the open edge of graphene layers (one-dimensional diffusion) with a slightly lower activation energy of about 2.3 eV. It is also found that the diffusion of metal atoms in curved graphenic layers of MWCNTs is slightly faster than in planar graphene.

In-situ and real time scanning probe microscopy of organic ultra thin films

In recent decades, Organic Thin Film Transistors (OTFTs) have attracted lots of interest due to their low cost, large area and flexible properties which have brought them to be considered the building blocks of the future organic electronics. Experimentally, devices based on the same organic material deposited in different ways, i.e. by varying the deposition rate of the molecules, show different electrical performance. As predicted theoretically, this is due to the speed and rate by which charge carriers can be transported by hopping in organic thin films, transport that depends on the molecular arrangement of the molecules. This strongly suggests a correlation between the morphology of the organic semiconductor and the performance of the OTFT and hence motivated us to carry out an in-situ real time SPM study of organic semiconductor growth as an almost unprecedent experiment with the aim to fully describe the morphological evolution of the ultra-thin film and find the relevant morphological parameters affecting the OTFT electrical response. For the case of 6T on silicon oxide, we have shown that the growth mechanism is 2D+3D, with a roughening transition at the third layer and a rapid roughening. Relevant morphological parameters have been extracted by the AFM images. We also developed an original mathematical model to estimate theoretically and more accurately than before, the capacitance of an EFM tip in front of a metallic substrate. Finally, we obtained Ultra High Vacuum (UHV) AFM images of 6T at lying molecules layer both on silicon oxide and on top of 6T islands. Moreover, we performed ex-situ AFM imaging on a bilayer film composed of pentacene (a p-type semiconductor) and C60 (an n-type semiconductor).

IN-SITU TEM PLASMA CHIP NANOFABRICATION AND CHARACTERIZATION

A silicon-based microcell was fabricated with the potential for use in in-situ transmission electron microscopy (TEM) of materials under plasma processing. The microcell consisted of 50 nm-thick film of silicon nitride observation window with 60μm distance between two electrodes. E-beam scattering Mont Carlo simulation showed that the silicon nitride thin film would have very low scattering effect on TEM primary electron beam accelerated at 200 keV. Only 4.7% of primary electrons were scattered by silicon nitride thin film and the Ar gas (60 μm thick at 1 atm pressure) filling the space between silicon nitride films. Theoretical calculation also showed low absorption of high-energy e-beam electrons. Because the plasma cell needs to survive the high vacuum TEM chamber while holding 1 atm internal pressure, a finite element analysis was performed to find the maximum stress the low-stress silicon nitride thin film experienced under pressure. Considering the maximum burst stress of low-stress silicon nitride thin film, the simulation results showed that the 50 nm silicon nitride thin film can be used in TEM under 1 atm pressure as the observation window. Ex-situ plasma generation experiment demonstrated that air plasma can be ignited at DC voltage of 570. A Scanning electron microscopy (SEM) analysis showed that etching and deposition occurred during the plasma process and larger dendrites formed on the positive electrode.