Structural refinement, growth process, photoluminescence and photocatalytic properties of (Ba1-xPr2x/3)WO4 crystals synthesized by the coprecipitation method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Investigação da dinâmica sequêncial Monte Carlo/Mecânica Quântica para sitemas moleculares orgânicos

O principal objetivo deste trabalho é investigar teóricamente as propriedades eletrônicas e óticas de compostos orgânicos em ambiente líquido. A compreensão das interações em sistemas líquidos é muito importante para a descrição de fenômenos em muitas partes da ciência, como Física, Química, Biologia e Materiais, bem como no desenvolvimento de materiais óticos. As flutuações térmicas fazem que inumaram das configurações para os líquidos possam ser gerados. Esta é a razão do comportamento estatístico observado em sistemas líquidos. Considerando estas dificuldades, o tratamento sequencial Monte Carlo / Mecânica Quântica (SMC/QM) é usado neste trabalho. Neste procedimento, a estrutura líquida é gerada primeiramente por simulações clássicas de MC e mais tarde, somente a parte mais importante do sistema é tratada com mecânica quântica. Usando o procedimento acima, os propriedades do quantum o pirazine dimethyl do thiene Methyl da laranja (MO) e do O 2,3-dimetil tieno[3,4-b] pirazina (DTP) foram investigados. O MO é um conhecido indicador de pH e pode ser encontrado sob circunstâncias básicas e acidas. Suas geometrias de mínima energia foram obtidas mediante a Teoria do Funcional da Densidade pelo funcional B3LYP, sendo o sistema descrito pelas bases de Pople com uma função de polarização (6-31G*). Para obter as propriedades médias dos observaveis, cálculos de química quântica foram executados dentro da aproximação semi-empírica de INDO/S-CI. Com respeito ao espectro de absorção, os dados experimentais existentes na literatura científica reportam a existência de uma larga banda localizada na região de baixas energias, mais precisamente entre 400 e 600 nm. Nossos resultados teóricos para a forma alcalina mostram uma transição intensa transição π → π* aproximadamente à 432.4 ± 0.03 nm e, sob condições ácidas, esta transição aparece aproximadamente à 507.4 ± 0.12, 496.4 ± 0.28 ou 545.3 ± 0.10 nm, dependendo da estrutura, mostrando bom acordo com resultados experimentais. O DTP é um sistema particular usado na produção de polímeros de baixo gap. Suas propriedades elétricas e óticas foram obtidas através de um novo procedimento conhecido por Configuração Eletrostática Média do Solvent (ASEC). O procedimento ASEC inclui moléculas do solvente como cargas pontuais e permite o obtenção das quantidades quânticas executando somente poucos cálculos de mecânica quântica. Para o DTP, usando a teoria das perturbações de segunda ordem Mφller-Plesset (MP2) e o conjunto de bases aug-cc-pVDZ, a convergência do momento de dipolo foi alcançada com apenas quatro cálculos de mecânica quântica à 1.16 D, apresentando um aumento de 42% quando comparado ao dipolo isolado. O polarizabilidade corresponde à outra característica elétrica que pôde ser medida. Considerando o mesmo nível empregado ao cálculo do dipolo, o valor médio 132.7 a30 foi observado. A região de mais baixas da energias do espectro de absorption foi investigada também atravé de procedimento de ASEC usando ambos as aproximações, semi-empírico e DFT. Esta região de absorção é motivo de conclusões contraditórias com relação à natureza das transições n → π* e π → π*. Nossos resultados mostram que realmente que essas excitações são realmente observadas simultanemente podendo sobrepôr-se. Como exemplo, nossos resultados para DFT, encontrados usando o funcional B3LYP nos mostra que estas transições aparecem aproximadamente à 360.6 e 351.1 nm.

Transporte eletrônico em nanofitas de grafeno sob a influência de fatores externos, via primeiros princípios

O grafeno é a primeira estrutura bidimensional que se obteve experimentalmente. Sua rede cristalina é uma rede hexagonal, conhecida como "Favo de Mel", possui apenas um átomo de espessura. Cortes em folhas de grafeno, privilegiando determinada direção, geram as chamadas nanofitas de grafeno. Embora o grafeno se comporte como um metal, é sabido que as nanofitas podem apresentar comportamentos semicondutor, metálico ou semimetálico, dependendo da direção de corte e/ou largura da fita. No caso de nanofitas semicondutoras, a largura da banda proibida (band gap), entre outros fatores, depende da largura da nanofita. Neste trabalho adotou-se métodos de primeiros princípios como o DFT (Density Functional Theory), afim de se obter as características tais como curvas de dispersão para nanofitas. Neste trabalho, primeiramente, são apresentados diagramas de bandas de energia e curvas de densidade de estados para nanofitas de grafeno semicondutoras, de diferentes larguras, e na ausência de influências externas. Utilizou-se métodos de primeiros princípios para a obtenção destas curvas e o método das funções de Green do Não Equilíbrio para o transporte eletrônico. Posteriormente foi investigado a influência da hidrogenização, temperatura e tensão mecânica sobre sistema, isso além, de se estudar o comportamento de transporte eletrônico com e sem influência destes fatores externos. Vale ressaltar que as nanofitas de grafeno apresentam possibilidades reais de aplicação em nanodispositivos eletrônicos, a exemplo de nanodiodos e nanotransistores. Por esse motivo, é importante se ter o entendimento de como os fatores externos alteram as propriedades de tal material, pois assim, espera-se que as propriedades de dispositivos eletrônicos também sejam influenciadas da mesma maneira que as nanofitas.

First principles investigations on the electronic structure of anchor groups on ZnO nanowires and surfaces

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Structural, dielectric, ferroelectric and optical properties of PBCT, PBST and PCST complex thin films on LaNiO3 metallic conductive oxide layer coated Si substrates by the CSD technique

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A relationship between structural and electronic order-disorder effects and optical properties in crystalline TiO2 nanomaterials

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections

We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction scheme [L.G. Ferreira, M. Marques, L.K. Teles, Phys. Rev. B 78 (2008) 125116] to obtain corrected band gaps and band offsets. Our calculations include the spin-orbit effects for the bulk cases, which have shown to be of importance for the equilibrium systems and are possibly degraded in these strained semiconductors. Therefore, the SO showed reduced importance for the band alignment of this particular system. Moreover, the electronic structure calculated along the transition region across the CdSe/CdTe interface shows an interesting non-monotonic variation of the band gap in the range 0.8-1.8 eV, which may enhance the absorption of light for corresponding frequencies at the interface between these two materials in photovoltaic applications. (C) 2012 Elsevier B.V. All rights reserved.

Structural refinement, growth process, photoluminescence and photocatalytic properties of (Ba1-xPr2x/3)WO4 crystals synthesized by the coprecipitation method

Barium praseodymium tungstate (Ba1-xPr2x/3)WO4 crystals with (x = 0, 0.01, and 0.02) were prepared by the coprecipitation method. These crystals were structurally characterized by X-ray diffraction (XRD), Rietveld refinements, Fourier-transform Raman (FT-Raman) and Fourier-transform infrared (FT-IR) spectroscopies. The shape and size of these crystals were observed by field emission scanning electron microcopy (FE-SEM). Their optical properties were investigated by ultraviolet visible (UV-vis) absorption and photoluminescence (PL) measurements. Moreover, we have studied the photocatalytic (PC) activity of crystals for degradation of rhodamine B (RhB) dye. XRD patterns, Rietveld refinements data, FT-Raman and FT-IR spectroscopies indicate that all crystals exhibit a tetragonal structure without deleterious phases. FT-Raman spectra exhibited 13 Raman-active modes in a range from 50 to 1000 cm(-1), while FT-IR spectra have 8 infrared active modes in a range from 200 to 1050 cm(-1). FE-SEM images showed different shapes (bonbon-, spindle-, rice-and flake-like) as well as a reduction in the crystal size with an increase in Pr3+ ions. A possible growth process was proposed for these crystals. UV-vis absorption measurements revealed a decrease in optical band gap values with an increase of Pr3+ into the matrix. An intense green PL emission was noted for (Ba1-xPr2x/3)WO4 crystals (x = 0), while crystals with (x = 0.01 and 0.02) produced a reduction in the wide band PL emission and the narrow band PL emission which is related to f-f transitions from Pr3+ ions. High photocatalytic efficiency was verified for the bonbon-like BaWO4 crystals as a catalyst in the degradation of the RhB dye after 25 min under UV-light. Finally, we discuss possible mechanisms for PL and PC properties of these crystals.

Enabling Blocks for Integrated CMOS UWB Transceivers

The last decades have seen an unrivaled growth and diffusion of mobile telecommunications. Several standards have been developed to this purposes, from GSM mobile phone communications to WLAN IEEE 802.11, providing different services for the the transmission of signals ranging from voice to high data rate digital communications and Digital Video Broadcasting (DVB). In this wide research and market field, this thesis focuses on Ultra Wideband (UWB) communications, an emerging technology for providing very high data rate transmissions over very short distances. In particular the presented research deals with the circuit design of enabling blocks for MB-OFDM UWB CMOS single-chip transceivers, namely the frequency synthesizer and the transmission mixer and power amplifier. First we discuss three different models for the simulation of chargepump phase-locked loops, namely the continuous time s-domain and discrete time z-domain approximations and the exact semi-analytical time-domain model. The limitations of the two approximated models are analyzed in terms of error in the computed settling time as a function of loop parameters, deriving practical conditions under which the different models are reliable for fast settling PLLs up to fourth order. Besides, a phase noise analysis method based upon the time-domain model is introduced and compared to the results obtained by means of the s-domain model. We compare the three models over the simulation of a fast switching PLL to be integrated in a frequency synthesizer for WiMedia MB-OFDM UWB systems. In the second part, the theoretical analysis is applied to the design of a 60mW 3.4 to 9.2GHz 12 Bands frequency synthesizer for MB-OFDM UWB based on two wide-band PLLs. The design is presented and discussed up to layout level. A test chip has been implemented in TSMC CMOS 90nm technology, measured data is provided. The functionality of the circuit is proved and specifications are met with state-of-the-art area occupation and power consumption. The last part of the thesis deals with the design of a transmission mixer and a power amplifier for MB-OFDM UWB band group 1. The design has been carried on up to layout level in ST Microlectronics 65nm CMOS technology. Main characteristics of the systems are the wideband behavior (1.6 GHz of bandwidth) and the constant behavior over process parameters, temperature and supply voltage thanks to the design of dedicated adaptive biasing circuits.

Synthesis and surface modification of semiconductor nanocrystals

The last decade has witnessed an exponential growth of activities in the field of nanoscience and nanotechnology worldwide, driven both by the excitement of understanding new science and by the potential hope for applications and economic impacts. The largest activity in this field up to date has been in the synthesis and characterization of new materials consisting of particles with dimensions in the order of a few nanometers, so-called nanocrystalline materials. [1-8] Semiconductor nanomaterials such as III/V or II/VI compound semiconductors exhibit strong quantum confinement behavior in the size range from 1 to 10 nm. Therefore, preparation of high quality semiconductor nanocrystals has been a challenge for synthetic chemists, leading to the recent rapid progress in delivering a wide variety of semiconducting nanomaterials. Semiconductor nanocrystals, also called quantum dots, possess physical properties distinctly different from those of the bulk material. Typically, in the size range from 1 to 10 nm, when the particle size is changed, the band gap between the valence and the conduction band will change, too. In a simple approximation a particle in a box model has been used to describe the phenomenon[9]: at nanoscale dimensions the degenerate energy states of a semiconductor separate into discrete states and the system behaves like one big molecule. The size-dependent transformation of the energy levels of the particles is called “quantum size-effect”. Quantum confinement of both the electron and hole in all three dimensions leads to an increase in the effective bandgap of the material with decreasing crystallite size. Consequently, both the optical absorption and emission of semiconductor nanaocrystals shift to the blue (higher energies) as the size of the particles gets smaller. This color tuning is well documented for CdSe nanocrystals whose absorption and emission covers almost the whole visible spectral range. As particle sizes become smaller the ratio of surface atoms to those in the interior increases, which has a strong impact on particle properties, too. Prominent examples are the low melting point [8] and size/shape dependent pressure resistance [10] of semiconductor nanocrystals. Given the size dependence of particle properties, chemists and material scientists now have the unique opportunity to change the electronic and chemical properties of a material by simply controlling the particle size. In particular, CdSe nanocrystals have been widely investigated. Mainly due to their size-dependent optoelectronic properties [11, 12] and flexible chemical processibility [13], they have played a distinguished role for a number of seminal studies [11, 12, 14, 15]. Potential technical applications have been discussed, too. [8, 16-27] Improvement of the optoelectronic properties of semiconductor nanocrystals is still a prominent research topic. One of the most important approaches is fabricating composite type-I core-shell structures which exhibit improved properties, making them attractive from both a fundamental and a practical point of view. Overcoating of nanocrystallites with higher band gap inorganic materials has been shown to increase the photoluminescence quantum yields by eliminating surface nonradiative recombination sites. [28] Particles passivated with inorganic shells are more robust than nanocrystals covered by organic ligands only and have greater tolerance to processing conditions necessary for incorporation into solid state structures or for other applications. Some examples of core-shell nanocrystals reported earlier include CdS on CdSe [29], CdSe on CdS, [30], ZnS on CdS, [31] ZnS on CdSe[28, 32], ZnSe on CdSe [33] and CdS/HgS/CdS [34]. The characterization and preparation of a new core-shell structure, CdSe nanocrystals overcoated by different shells (CdS, ZnS), is presented in chapter 4. Type-I core-shell structures as mentioned above greatly improve the photoluminescence quantum yield and chemical and photochemical stability of nanocrystals. The emission wavelengths of type-I core/shell nanocrystals typically only shows a small red-shift when compared to the plain core nanocrystals. [30, 31, 35] In contrast to type-I core-shell nanocrystals, only few studies have been conducted on colloidal type-II core/shell structures [36-38] which are characterized by a staggered alignment of conduction and valence bands giving rise to a broad tunability of absorption and emission wavelengths, as was shown for CdTe/CdSe core-shell nanocrystals. [36] The emission of type-II core/shell nanocrystals mainly originates from the radiative recombination of electron-hole pairs across the core-shell interface leading to a long photoluminescence lifetime. Type-II core/shell nanocrystals are promising with respect to photoconduction or photovoltaic applications as has been discussed in the literature.[39] Novel type-II core-shell structures with ZnTe cores are reported in chapter 5. The recent progress in the shape control of semiconductor nanocrystals opens new fields of applications. For instance, rod shaped CdSe nanocrystals can enhance the photo-electro conversion efficiency of photovoltaic cells, [40, 41] and also allow for polarized emission in light emitting diodes. [42, 43] Shape control of anisotropic nanocrystals can be achieved by the use of surfactants, [44, 45] regular or inverse micelles as regulating agents, [46, 47] electrochemical processes, [48] template-assisted [49, 50] and solution-liquid-solution (SLS) growth mechnism. [51-53] Recently, formation of various CdSe nanocrystal shapes has been reported by the groups of Alivisatos [54] and Peng, [55] respectively. Furthermore, it has been reported by the group of Prasad [56] that noble metal nanoparticles can induce anisotropic growth of CdSe nanocrystals at lower temperatures than typically used in other methods for preparing anisotropic CdSe structures. Although several approaches for anisotropic crystal growth have been reported by now, developing new synthetic methods for the shape control of colloidal semiconductor nanocrystals remains an important goal. Accordingly, we have attempted to utilize a crystal phase control approach for the controllable synthesis of colloidal ZnE/CdSe (E = S, Se, Te) heterostructures in a variety of morphologies. The complex heterostructures obtained are presented in chapter 6. The unique optical properties of nanocrystals make them appealing as in vivo and in vitro fluorophores in a variety of biological and chemical investigations, in which traditional fluorescence labels based on organic molecules fall short of providing long-term stability and simultaneous detection of multiple emission colours [References]. The ability to prepare water soluble nanocrystals with high stability and quantum yield has led to promising applications in cellular labeling, [57, 58] deep-tissue imaging, [59, 60] and assay labeling [61, 62]. Furthermore, appropriately solubilized nanocrystals have been used as donors in fluorescence resonance energy transfer (FRET) couples. [63-65] Despite recent progress, much work still needs to be done to achieve reproducible and robust surface functionalization and develop flexible (bio-) conjugation techniques. Based on multi-shell CdSe nanocrystals, several new solubilization and ligand exchange protocols have been developed which are presented in chapter 7. The organization of this thesis is as follows: A short overview describing synthesis and properties of CdSe nanocrystals is given in chapter 2. Chapter 3 is the experimental part providing some background information about the optical and analytical methods used in this thesis. The following chapters report the results of this work: synthesis and characterization of type-I multi-shell and type-II core/shell nanocrystals are described in chapter 4 and chapter 5, respectively. In chapter 6, a high–yield synthesis of various CdSe architectures by crystal phase control is reported. Experiments about surface modification of nanocrystals are described in chapter 7. At last, a short summary of the results is given in chapter 8.

Numerical Modelling of Graphene Nanoribbon-fets for Analog and Digital Applications

Graphene, that is a monolayer of carbon atoms arranged in a honeycomb lattice, has been isolated only recently from graphite. This material shows very attractive physical properties, like superior carrier mobility, current carrying capability and thermal conductivity. In consideration of that, graphene has been the object of large investigation as a promising candidate to be used in nanometer-scale devices for electronic applications. In this work, graphene nanoribbons (GNRs), that are narrow strips of graphene, for which a band-gap is induced by the quantum confinement of carriers in the transverse direction, have been studied. As experimental GNR-FETs are still far from being ideal, mainly due to the large width and edge roughness, an accurate description of the physical phenomena occurring in these devices is required to have valuable predictions about the performance of these novel structures. A code has been developed to this purpose and used to investigate the performance of 1 to 15-nm wide GNR-FETs. Due to the importance of an accurate description of the quantum effects in the operation of graphene devices, a full-quantum transport model has been adopted: the electron dynamics has been described by a tight-binding (TB) Hamiltonian model and transport has been solved within the formalism of the non-equilibrium Green's functions (NEGF). Both ballistic and dissipative transport are considered. The inclusion of the electron-phonon interaction has been taken into account in the self-consistent Born approximation. In consideration of their different energy band-gap, narrow GNRs are expected to be suitable for logic applications, while wider ones could be promising candidates as channel material for radio-frequency applications.

Electronic properties of zig-zag carbon nanotubes : a first-principles study

Carbon nanotube (CNT) is a one dimensional (1-D) nanostructured material, which has been the focal point of research over the past decade for intriguing applications ranging from nanoelectronics to chemical and biological sensors. Using a first-principles gradient corrected density functional approach, we present a comprehensive study of the geometry and energy band gap in zig-zag semi-conducting (n,0) carbon nanotubes (CNT) to resolve some of the conflicting findings. Our calculations confirm that the single wall (n,0) CNTs fall into two distinct classes depending upon n mod 3 equal to 1 (smaller band gaps) or 2 (larger gaps). The effect of longitudinal strain on the band gap further confirms the existence of two distinct classes: for n mod 3 = 1 or 2, changing Eg by ~ ±110 meV for 1% strain in each case. We also present our findings for the origin of metallicity in multiwall CNTs.

TDOA for Narrow-band Signal with Low Sampling Rate and Imperfect Synchronization

Time-based localization techniques such as multilateration are favoured for positioning to wide-band signals. Applying the same techniques with narrow-band signals such as GSM is not so trivial. The process is challenged by the needs of synchronization accuracy and timestamp resolution both in the nanoseconds range. We propose approaches to deal with both challenges. On the one hand, we introduce a method to eliminate the negative effect of synchronization offset on time measurements. On the other hand, we propose timestamps with nanoseconds accuracy by using timing information from the signal processing chain. For a set of experiments, ranging from sub-urban to indoor environments, we show that our proposed approaches are able to improve the localization accuracy of TDOA approaches by several factors. We are even able to demonstrate errors as small as 10 meters for outdoor settings with narrow-band signals.

Electronic band dispersion of graphene nanoribbons via Fourier-transformed scanning tunneling spectroscopy

The electronic structure of atomically precise armchair graphene nanoribbons of width N=7 (7-AGNRs) are investigated by scanning tunneling spectroscopy (STS) on Au(111). We record the standing waves in the local density of states of finite ribbons as a function of sample bias and extract the dispersion relation of frontier electronic states by Fourier transformation. The wave-vector-dependent contributions from these states agree with density functional theory calculations, thus enabling the unambiguous assignment of the states to the valence band, the conduction band, and the next empty band with effective masses of 0.41±0.08me,0.40±0.18me, and 0.20±0.03me, respectively. By comparing the extracted dispersion relation for the conduction band to corresponding height-dependent tunneling spectra, we find that the conduction band edge can be resolved only at small tip-sample separations and has not been observed before. As a result, we report a band gap of 2.37±0.06 eV for 7-AGNRs adsorbed on Au(111).

Intermediate band materials for more efficient solar energy use: quantum modelling and experimental realizations

The intermediate band (IB) solar cell (Fig. 1) has been proposed [1] to increase photovoltaic efficiency by a factor above 1.5, based on the absorption of two sub-bandgap photons to promote an electron across the bandgap. To realize this principle, that can be applied also to obtain efficient photocatalysis with sunlight, we proposed in recent years several materials where a metal or heavy element, substituting for an electropositive atom in a known semiconductor that has an appropriate band gap width (around 2 eV), forms inside the gap the partially filled levels needed for this aim