Computational tool to support design of DAC Converter model AD7528 with the object code in XML

Based on literature review, electronic systems design employ largely top-down methodology. The top-down methodology is vital for success in the synthesis and implementation of electronic systems. In this context, this paper presents a new computational tool, named BD2XML, to support electronic systems design. From a block diagram system of mixed-signal is generated object code in XML markup language. XML language is interesting because it has great flexibility and readability. The BD2XML was developed with object-oriented paradigm. It was used the AD7528 converter modeled in MATLAB / Simulink as a case study. The MATLAB / Simulink was chosen as a target due to its wide dissemination in academia and industry. From this case study it is possible to demonstrate the functionality of the BD2XML and make it a reflection on the design challenges. Therefore, an automatic tool for electronic systems design reduces the time and costs of the design.

Differential mixer with NMOS/PMOS stack at switching stage

This paper proposes a novel differential mixer topology. The traditional stage of switching is replaced by a stack of NMOS and PMOS transistors combined. A design is given of a 900 MHz down-conversion mixer using a 0.35 μm CMOS process. Comparison with conventional mixer shows that the topology leads to a better performance in terms of conversion gain and linearity. ©2012 IEEE.

Photodetection with gate-controlled lateral BJTs from standard CMOS technology

The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.

Desenvolvimento e implementação de um sistema para detecção de falhas em estruturas usando microcontrolador

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Projeto de uma referência de tensão com baixa susceptibilidade a interferência eletromagnética (EMI)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo da compatibilidade eletromagnética em placa de circuito impresso de centrais telefônicas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Sintetizador analógico de sinais ortogonais: projeto e construção usando tecnologia CMOS

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Ambiente virtual de apoio ao ensino com ênfase na teoria das inteligências múltiplas e sua aplicação em sistemas digitais

Pós-graduação em Ciência da Computação - IBILCE

Implementação em FPGA de um sistema para processamento de imagens digitais para aplicações diversificadas

Pós-graduação em Ciência da Computação - IBILCE

Proposta de implementação de redes de base radial em tecnologias CMOS e BiCMOS

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Análise teórica de novos circuladores de 3-portas em cristais fotônicos bidimensionais

Este trabalho apresenta um estudo teórico sobre novos circuladores compactos com 3-portas tipos W e Y, baseados em cristais fotônicos bidimensionais. No circulador tipo Y, os guias de onda que o compõem formam ângulos de 120° entre si (com formato assemelhado ao da letra Y). O circulador tipo W é uma modificação do tipo Y, obtido a partir do reposicionamento de uma das portas entre as outras duas com um ângulo de 60° entre os guias de onda (com formato assemelhado ao da letra W). Os parâmetros geométricos dos cristais foram obtidos dos diagramas de bandas proibidas. O circulador de três portas tipo Y, projetado para operar em frequências de micro-ondas, foi investigado com o objetivo de gerar um protótipo inédito, enquanto que o tipo W, para frequências ópticas, foi investigado para demonstrar a possibilidade de desenvolver um circulador mais compacto em comparação com o tipo Y conhecido. O tipo W pode ser também uma alternativa geométrica mais adequada no design de circuitos integrados. Os modelos são bons no sentido em que possuem elevada isolação (maior que -20 dB em ambos os circuladores) e baixa perda de inserção (maior que -0,5 dB no caso do circulador tipo Y). O circulador tipo W apresenta uma largura de banda de operação em torno de 100 GHz para um nível de -20 dB de isolação, centrado no comprimento de onda de 1,5um. As simulações foram feitas utilizando-se o software comercial COMSOL Multiphysics, o qual se baseia no método dos elementos finitos.

A low-power silicon-on-insulator PWM discriminator for biomedical applications

A CMOS/SOI circuit to decode PWM signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique is based on a double-integration concept and does not require dc filtering. Nonoverlapping control phases are internally derived from the incoming pulses and a fast-settling comparator ensures good discrimination accuracy in the megahertz range. The circuit was integrated on a 2 mu m single-metal SOI fabrication process and has an effective area of 2mm(2) Typically, the measured resolution of encoding parameter a was better than 10% at 6MHz and V-DD=3.3V. Stand-by consumption is around 340 mu W. Pulses with frequencies up to 15MHz and alpha = 10% can be discriminated for V-DD spanning from 2.3V to 3.3V. Such an excellent immunity to V-DD deviations meets a design specification with respect to inherent coupling losses on transmitting data and power by means of a transcutaneous link.

Metodologia de simulação numérica do comportamento térmico em equipamentos eletroeletrônicos

Pós-graduação em Engenharia Elétrica - FEIS

Architectures, stability and optimization for clock distribution networks

Synchronous telecommunication networks, distributed control systems and integrated circuits have its accuracy of operation dependent on the existence of a reliable time basis signal extracted from the line data stream and acquirable to each node. In this sense, the existence of a sub-network (inside the main network) dedicated to the distribution of the clock signals is crucially important. There are different solutions for the architecture of the time distribution sub-network and choosing one of them depends on cost, precision, reliability and operational security. In this work we expose: (i) the possible time distribution networks and their usual topologies and arrangements. (ii) How parameters of the network nodes can affect the reachability and stability of the synchronous state of a network. (iii) Optimizations methods for synchronous networks which can provide low cost architectures with operational precision, reliability and security. (C) 2011 Elsevier B. V. All rights reserved.

Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs

The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results of radiation effects in MOSFETs that were exposed to 3.2 Grad radiation dose produced by a 2.6-MeV proton beam. The focus of this work was to electrically characterize a Rectangular-Gate MOSFET (RGT) and a Circular-Gate MOSFET (CGT), manufactured with the On Semiconductor 0.5 mu m standard CMOS fabrication process and to verify a suitable geometry for space applications. During the experiment, I-DS x V-GS curves were measured. After irradiation, the RGT off-state current (I-OFF) increased approximately two orders of magnitude reaching practically the same value of the I-OFF in the CGT, which only doubled its value. (C) 2011 Elsevier B.V. All rights reserved.