A Space-Vector-Based Hysteresis Current Controller for a General n-Level Inverter-Fed Drive With Nearly Constant Switching Frequency Control

A current-error space-vector-based hysteresis current controller for a general n-level voltage-source inverter (VSI)-fed three-phase induction motor (IM) drive is proposed here, with control of the switching frequency variation for the full linear modulation range. The proposed current controller monitors the space-vector-based current error of an n-level VSI-fed IM to keep the current error within a parabolic boundary, using the information of the current triangular sector in which the tip of the reference vector lies. Information of the reference voltage vector is estimated using the measured current-error space vectors, along the alpha- and beta-axes. Appropriate dimension and orientation of this parabolic boundary ensure a switching frequency spectrum similar to that of a constant-switching-frequency voltage-controlled space vector pulsewidth modulation (PWM) (SVPWM)-based IM drive. Like SVPWM for multilevel inverters, the proposed controller selects inverter switching vectors, forming a triangular sector in which the tip of the reference vector stays, for the hysteresis PWM control. The sector in the n-level inverter space vector diagram, in which the tip of the fundamental stator voltage stays, is precisely detected, using the sampled reference space vector estimated from the instantaneous current-error space vectors. The proposed controller retains all the advantages of a conventional hysteresis controller such as fast current control, with smooth transition to the overmodulation region. The proposed controller is implemented on a five-level VSI-fed 7.5-kW IM drive.

Parametric study of the behavior of double toggle switching mechanisms

The paper identified and characterized a special multi-degree of freedom toggle behavior, called double toggle, observed in a typical MCCB switching mechanism. For an idealized system, the condition of toggle sequence is derived geometrically. The existing tools available in a multi-body dynamics package are used for exploring the dynamic behavior of such systems parametrically. The double toggle mechanism is found to make the system insensitive to the operator's behavior; however, the system is vulnerable under extreme usage. The linkage kinematics and stopper locations are found to have dominant role on the behavior of the system. It is revealed that the operating time is immune to the inertial property of the input link and sensitive to that of the output link. Novel designs exploiting this observation, in terms of spring and toggle placements, to enhance switching performance have also been reported in the paper. Detailed study revealed that strategic placement of the spring helps in selective alteration of system performance. Thus, the study establishes the critical importance of the kinematic design of MCCB over the dynamic parameters. (C) 2013 Elsevier Ltd. All rights reserved.

Electrical switching studies on amorphous Ge‐Te‐Sn thin films

Electrical switching studies on amorphous Ge17Te83−xSnx thin films (1 ≤ x ≤ 4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge17Te83−xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83−xSnx samples, make them suitable candidates for phase change memory applications.

Measurement of IGBT switching characteristics and loss using coaxial current transformer

Device switching times and switching energy losses are required over a wide range of practical working conditions for successful design of insulated gate bipolar transistor (IGBT) based power converters. This paper presents a cost-effective experimental setup using a co-axial current transformer for measurement of IGBT switching characteristics and switching energy loss. Measurements are carried out on a 50A, 1200V IGBT (SKM50GB123D) for different values of gate resistance, device current and junction temperature. These measurements augment the technical data available in the device datasheet.Short circuit transients are also investigated experimentally under hard switched fault as well as fault under load conditions.

Experimental investigation on switching characteristics of IGBTs for traction application

In traction application, inverters need to have high reliability on account of wide variation in operating conditions, extreme ambient conditions, thermal cycling and varying DC link voltage. Hence it is important to have a good knowledge of switching characteristics of the devices used. The focus of this paper is to investigate and compare switching characteristics and losses of IGBT modules for traction application. Dependence of device transition times and switching energy losses on dc link voltage, device current and operating temperature is studied experimentally.

Control of switching surges due to energization of 765kV UHV transmission line

Reduction of switching surge over voltages allows an economic design of UHV transmission system with reduced insulation. The various means of switching surge over voltage control with pre-insertion resistors/closing resistors, shunt re-actors and controlled switching are illustrated. The switching surge over voltages during the energization of series compensated line are compared with uncompensated line. An Electromagnetic transients program has been developed for studying the effect of various means of control of switching transients during 765kV UHV transmission line energization. This paper presents the studies carried out on switching surges control in 765kV UHV transmission line energization.

Multi-resistance states in the electrical switching behavior of amorphous Si15Te75Ge10 thin films: Possibility of multi-bit storage

Electrical switching studies on amorphous Si15Te75Ge10 thin film devices reveal the existence of two distinct, stable low-resistance, SET states, achieved by varying the electrical input to the device. The multiple resistance levels can be attributed to multi-stage crystallization, as observed from temperature dependant resistance studies. The devices are tested for their ability to be RESET with minimal resistance degradation; further, they exhibit a minimal drift in the SET resistance value even after several months of switching. (c) 2013 Elsevier B.V. All rights reserved.

pH Induced switching in hydrogel coated fiber bragg grating sensor

In this paper we report a novel hydrogel functionalized optical Fiber Bragg Grating (FBG) sensor based on chemo-mechanical-optical sensing, and demonstrate its specific application in pH activated process monitoring. The sensing mechanism is based on the stress due to ion diffusion and polymer phase transition which produce strain in the FBG. This results in shift in the Bragg wavelength which is detected by an interrogator system. A simple dip coating method to coat a thin layer of hydrogel on the FBG has been established. The gel consists of sodium alginate and calcium chloride. Gel formation is observed in real-time by continuously monitoring the Bragg wavelength shift. We have demonstrated pH sensing in the range of pH of 2 to 10. Another interesting phenomenon is observed by swelling and deswelling of FBG functionalized with hydrogel by a sequence of alternate dipping between acidic and base solutions. It is observed that the Bragg wavelength undergoes reversible and repeatable pH dependent switching.

Electrical switching in amorphous Si-Te-Ge thin films: Impact of input energy on crystallization process and switching parameters

Electrical switching studies on amorphous Si15Te74Ge11 thin film devices show interesting changes in the switching behavior with changes in the input energy supplied; the input energy determines the extent of crystallization in the active volume, which is reflected in the value of SET resistances. This in turn, determines the trend exhibited by switching voltage (V-t) for different input conditions. The results obtained are analyzed on the basis of the amount of Joule heat generated, which determines the temperature of the active volume. Depending on the final temperature, devices are rendered either in the intermediate state with a resistance of 5*10(2) Omega or the ON state with a resistance of 5*10(1) Omega. (C) 2013 Elsevier B.V. All rights reserved.

A nearly constant switching frequency current hysteresis controller with generalized parabolic boundaries using 12-sided polygonal voltage space vectors for IM drives

In this paper, a current hysteresis controller with parabolic boundaries for a 12-sided polygonal voltage space vector inverter fed induction motor (IM) drive is proposed. Parabolic boundaries with generalized vector selection logic, valid for all sectors and rotational direction, is used in the proposed controller. The current error space phasor boundary is obtained by first studying the drive scheme with space vector based PWM (SVPWM) controller. Four parabolas are used to approximate this current error space phasor boundary. The system is then run with space phasor based hysteresis PWM controller by limiting the current error space vector (CESV) within the parabolic boundary. The proposed controller has simple controller implementation, nearly constant switching frequency, extended modulation range and fast dynamic response with smooth transition to the over modulation region.

A Medium-Voltage Inverter-Fed IM Drive Using Multilevel 12-Sided Polygonal Vectors, With Nearly Constant Switching Frequency Current Hysteresis Controller

In this paper, a current error space vector (CESV)-based hysteresis current controller for a multilevel 12-sided voltage space vector-based inverter-fed induction motor (IM) drive is proposed. The proposed controller gives a nearly constant switching frequency operation throughout different speeds in the linear modulation region. It achieves the elimination of 6n +/- 1, n = odd harmonics from the phase voltages and currents in the entire modulation range, with an increase in the linear modulation range. It also exhibits fast dynamic behavior under different transient conditions and has a simple controller implementation. Nearly constant switching frequency is obtained by matching the steady-state CESV boundaries of the proposed controller with that of a constant switching frequency SVPWM-based drive. In the proposed controller, the CESV reference boundaries are computed online, using the switching dwell time and voltage error vector of each applied vector. These quantities are calculated from estimated sampled reference phase voltages. Vector change is decided by projecting the actual current error along the computed hysteresis space vector boundary of the presently applied vector. The estimated reference phase voltages are found from the stator current error ripple and the parameters of the IM.

Switching and release dynamics of an electrostatically actuated MEMS switch under the influence of squeeze-film damping

This paper reports analytical modeling, simulation and experimental validation for switching and release times of an electrostatically actuated micromachined switch. Presented work is an extension of our earlier work [1] that analytically argued, and numerically and experimentally demonstrated, why pull-in time is larger that pull-up time when the actuation voltage is less than twice of the pull-in voltage. In this paper, switching dynamics is investigated under the influence of squeeze-film damping. Tests were performed on SOI (silicon-on-insulator) based parallel beams structures.Typical voltage requirement for actuation is in the range of 10-30 V. All the experiments were performed in normal atmospheric pressure. Measurement results confirm that the quality factor Q has appreciable effect on the release time compared to the switching time. The quality factor Q is extracted from the response measurement and compared with the ANSYS simulation result. In addition, the dynamic pull-in effect has also been studied and reported in this paper. A contribution of this work includes the effect of various phenomena such as squeeze-film damping, dynamic pull-in, and frequency pull-in effects on the switching dynamics of a MEMS switch.

Design of double toggle switching mechanisms

Toggle mechanisms are ubiquitous in electrical switches. However, literature for their mechanical design is scarce. This paper defines and classifies the toggle phenomena observed during switching. The concept of double toggle introduced in this paper enables a systematic screening of kinematic structure for the suitability in high performance switches. Seven structural and three kinematic criteria are identified for this purpose. It is also demonstrated that each such feasible kinematic structure lends itself to multiple physical embodiments. Therefore, the theory and procedure presented in this work can be used for design of numerous kinematically distinct mechanisms. One representative mechanical embodiment for a novel double toggle switch, including mass and geometric shape of links has been included in the paper. The switching behavior of the design is validated using Pro/Mechanism (TM). (C) 2013 Elsevier Ltd. All rights reserved.

Comparative Evaluation of Switching and Average Models of a DC-DC Boost Converter for Real-Time Simulation

This paper presents a comparative evaluation of the average and switching models of a dc-dc boost converter from the point of view of real-time simulation. Both the models are used to simulate the converter in real-time on a Field Programmable Gate Array (FPGA) platform. The converter is considered to function over a wide range of operating conditions, and could do transition between continuous conduction mode (CCM) and discontinuous conduction mode (DCM). While the average model is known to be computationally efficient from the perspective of off-line simulation, the same is shown here to consume more logical resources than the switching model for real-time simulation of the dc-dc converter. Further, evaluation of the boundary condition between CCM and DCM is found to be the main reason for the increased consumption of resources by the average model.

Electrical switching behavior of amorphous Ge15Te85 Si--x(x) thin films with phase change memory applications

Amorphous Ge15Te85-xSix thin film switching devices (1 <= x <= 6) have been deposited in sandwich geometry, on glass substrates with aluminum electrodes, by flash evaporation technique. These devices exhibit memory type electrical switching, like bulk Ge15Te85-xSix glasses. However, unlike the bulk glasses, a-Ge15Te85-xSix films exhibit a smooth electrical switching behavior. The electrical switching fields of a-Ge15Te85-xSix thin film samples are also comparable with other chalcogenide samples used in memory applications. The switching fields of a-Ge15Te85-xSix films have been found to increase with increasing Si concentration. Also, the optical band gap of a-Ge15Te85-xSix films is found to increase with Si content. The observed results have been understood on the basis of increase in network connectivity and rigidity with Si addition. (C) 2013 Elsevier Ltd. All rights reserved.