Synthesis, spectroscopic and thermal properties of nickel (II)-azo complexes with blue-violet light wavelength

A novel azo dye containing isoxazole ring and beta-diketone derivative (TIAD) and its two nickel (II) complexes (Ni (II)-ETIAD and Ni (II)-HTIAD) were synthesized in order to obtain a blue-violet light absorption and better thermal stability as a promising organic storage material for next generation of high density digital versatile disc-recordable (HD-DVD-R) systems that uses a high numerical aperture of 0.85 at 405 nm wavelength. Their structures were confirmed on the basis of elemental analysis, MS, FT-IR, UV-Vis and magnetic data. Their solubility in 2,2,3,3-tetrafluoro-1-propanol (TFP) and absorption properties of thin film were measured. The difference of absorption maximum from the complexes to their ligands was discussed. In addition, the TG analysis of the complexes was also determined, and their thermal stability was evaluated. (C) 2004 Elsevier Ltd. All rights reserved.

Synthesis, spectroscopic properties and thermal stability of metal(II) tetraazaporphyrin complexes with two strong wavelength absorption

Three kinds of metal(II) tetraazaporphyrin complexes with blue-violet and red light wavelength absorption were synthesized by refluxing tetraazaporphyrin ligand and different metal(II) ions, respectively. Their structures were confirmed by elemental analysis, LDI-TOF-MS, FT-IR and UV-Vis. The solubility of metal(II) tetraazaporphyrin complexes in organic solvents and absorption properties of their chloroform solution and films on K9 glass in the region 250-800 nm were measured. The influence on the difference of absorption maximum from metal(II) tetraazaporphyrin complexes to tetraazaporphyrin ligand by different metal(II) ions was studied. In addition, the thermal stability of the complexes was also evaluated. (c) 2006 Elsevier Ltd. All rights reserved.

沉积温度对LaF3薄膜性能的影响

abstract {LaF₃ single-layer coatings were prepared by thermal boat evaporation at the deposition temperatures of 189, 255, 277 and 321°C respectively. The crystal structures of the coatings were characterized by X-ray diffraction (XRD). A spectrophotometer was employed to measure its transmittance. Moreover, refractive index, extinction coefficient and cut-off wavelength were obtained from the measured transmittance spectral curve. The residual stress was evaluated by the Stoney's equation and optical interferometer. Laser induce damage threshold (LIDT) was performed by a tripled Nd:YAG laser system. The results show that the crystallization status becomes better with the deposition temperature increasing. Correspondingly, the grain size also gets larger. Meanwhile, the coatings become more compact and the refractive index increases. However, the absorption of coatings seriously rises and the cut-off wavelength drifts to the long wave. In addition, the residual stress also increases and the intrinsic stress plays a determinant role in the coating. The LIDT of the coating also enhances at high temperature.}

Studies on arsenical creosote as a wood preservative for marine structures. Part 1. Incorporation of arsenic in creosote at various temperatures

A detailed study of the fortification of normal creosote and low temperature creosote with As sub(2) O sub(3) at 40°C, 50°C, 60°C, 70°C, 80°C and 90°C was carried out. When compared to normal creosote, low temperature creosote has been found to combine more easily with As sub(2) O sub(3) when temperature was . raised from 40 to 90°C. The incorporated arsenic values obtained shows that low temperature creosote with high phenolic content, retains considerably more As sub(2) O sub(3) and a maximum of 0.2180% w/w can be incorporated in low temperature creosote at 90°C.

Hierarchical electrohydrodynamic structures for surface-enhanced Raman scattering.

Surface enhanced Raman scattering (SERS) is a well-established spectroscopic technique that requires nanoscale metal structures to achieve high signal sensitivity. While most SERS substrates are manufactured by conventional lithographic methods, the development of a cost-effective approach to create nanostructured surfaces is a much sought-after goal in the SERS community. Here, a method is established to create controlled, self-organized, hierarchical nanostructures using electrohydrodynamic (HEHD) instabilities. The created structures are readily fine-tuned, which is an important requirement for optimizing SERS to obtain the highest enhancements. HEHD pattern formation enables the fabrication of multiscale 3D structured arrays as SERS-active platforms. Importantly, each of the HEHD-patterned individual structural units yield a considerable SERS enhancement. This enables each single unit to function as an isolated sensor. Each of the formed structures can be effectively tuned and tailored to provide high SERS enhancement, while arising from different HEHD morphologies. The HEHD fabrication of sub-micrometer architectures is straightforward and robust, providing an elegant route for high-throughput biological and chemical sensing.

Femtosecond superradiant emission in AlGaInAs quantum-well semiconductor laser structures.

Ultrashort superradiant pulse generation from a 1580 nm AlGaInAs multiple quantum-well (MQW) semiconductor structure has been experimentally demonstrated for the first time. Superradiance is confirmed by analyzing the evolution of the optical temporal waveforms and spectra. Superradiant trends and regimes are studied as a function of driving condition. An optical pulse train is obtained at 1580 nm wavelength, with pulse durations as short as 390 fs and pulse peak powers of 7.2 W.

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hybrid deterministic-statistical modelling of built-up structures

When used correctly, Statistical Energy Analysis (SEA) can provide good predictions of high frequency vibration levels in built-up structures. Unfortunately, the assumptions that underlie SEA break down as the frequency of excitation is reduced, and the method does not yield accurate predictions at "medium" frequencies (and neither does the Finite Element Method, which is limited to low frequencies). A basic problem is that parts of the system have a short wavelength of deformation and meet the requirements of SEA, while other parts of the system do not - this is often referred to as the "mid-frequency" problem, and there is a broad class of mid-frequency vibration problems that are of great concern to industry. In this paper, a coupled deterministic-statistical approach referred to as the Hybrid Method (Shorter & Langley, 2004) is briefly described, and some results that demonstrate how the method overcomes the aforementioned difficulties are presented.

Active control of high frequency vibration in uncertain structures

The active suppression of structural vibration is normally achieved by either feedforward or feedback control. In the absence of a suitable reference signal feedforward control cannot be employed and feedback control is the only viable approach. Conventional feedback control algorithms (e.g. LQR and LQG) are designed on the basis of a mathematical model of the system and ideally the performance of the system should be robust against uncertainties in this model. The aim of this paper is to numerically investigate the robustness of LQR and LQG algorithms by designing the controller for a nominal system, and then assessing (via Monte Carlo simulation) the effects of uncertainties in the system. The ultimate concern is with the control of high frequency vibrations, where the short wavelength of the structural deformation induces a high sensitivity to imperfection. It is found that standard algorithms such as LQR and LQG are generally unfeasible for this case. This leads to a consideration of design strategies for the robust active control of high frequency vibrations. The system chosen for the numerical simulation concerns two coupled plates, which are randomized by the addition of point masses at random locations.

Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band

This paper demonstrates on chip sub bandgap detection of light at 1550 nm wavelength using the configuration of interleaved PN junctions along a silicon waveguide. The device operates under reverse bias in a nearly fully depleted mode, thus minimizing the free carrier plasma losses and significantly increases the detection volume at the same time. Furthermore, substantial enhancement in responsivity is observed by the transition from reverse bias to avalanche breakdown regime. The observed high responsivity of up to 7.2 mA/W at 3 V is attributed to defect assisted photogeneration, where the defects are related to the surface and the bulk of the waveguide. © 2014 AIP Publishing LLC.

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)

Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at similar to 1 mu m, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures

The effects of various InGaAs layers on the structural and optical properties of InAs self-assembled quantum dots (QDs) grown by molecular-beam epitaxy ( MBE) were investigated. The emission wavelength of 1317 nm was obtained by embedding InAs QDs in InGAs/GgAs quantum well. The temperature-dependent and timed-resolved photoluminescence (TDPL and TRPL) were used to study the dynamic characteristics of carriers. InGaAs cap layer may improve the quality of quantum dots for the strain relaxation around QDs, which results in a stronger PL intensity and an increase of PL peak lifetime up to 170 K. We found that InGaAs buffer layer may reduce the PL peak lifetime of InAs QDs, which is due to the buffer layer accelerating the carrier migration. The results also show that InGaAs cap layer can increase the temperature point when, the thermal reemission and nonradiative recombination contribute significantly to the carrier dynamics.

Electroluminescence from Au/(SiO2/Si/SiO2) nanometer double barrier/p-Si structures and its mechanism

SiO2/Si/SiO2 nanometer double barriers (SSSNDB) with Si layers of twenty-seven different thicknesses in a range of 1-5 nm with an interval of 0.2 nm have been deposited on p-Si substrates using two-target alternative magnetron sputtering. Electroluminescence (EL) from the semitransparent Au film/SSSNDB/p-Si diodes and from a control diode without any Si layer have been observed under forward bias. Each EL spectrum of all these diodes can be fitted by two Gaussian bands with peak energies of 1.82 and 2.25 eV, and full widths at half maximum of 0.38 and 0.69 eV, respectively. It is found that the current, EL peak wavelength and intensities of the two Gaussian bands of the Au/SSSNDB/p-Si structure oscillate synchronously with increasing Si layer thickness with a period corresponding to half a de Broglie wavelength of the carriers. The experimental results strongly indicate that the EL originates mainly from two types of luminescence centres with energies of 1.82 and 2.25 eV in the SiO2 barriers, rather than from the nanometer Si well in the SSSNDB. The EL mechanism is discussed in detail.

Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands

We report the effect of InchiGa1-chiAs (0 less than or equal to chi less than or equal to0.4) capping layer on photoluminescence (PL) properties of 1.3 mum wavelength self-assembled InAs quantum islands, which are formed via depositing 3.5 monolayers (ML) InAs on GaAs (1 0 0) substrate by molecular beam epitaxy (MBE). Compared with the InchiGa1-chiAs capping layer containing a larger In mole fraction chi greater than or equal to0.2 and the GaAs capping layer (chi = 0), the InAs islands covered by the In0.1Ga0.9As layer show PL with lower emission energy, narrower full-width at half-maximum (FWHM), and quite stronger intensity. The PL peak energy and FWHM become more temperature dependent with the increase of In content in the InchiGa1-chiAs capping layer (chi greater than or equal to0.2), while the InAs islands covered by the In0.1Ga0.9As layer is much less temperature sensitive. In addition, the InAs islands covered by the In0.1Ga0.9As capping layer show room temperature PL wavelength at about 1.3 mum. (C) 2001 Published by Elsevier Science B.V.