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This work describes the performance of AlN-based bulk acoustic wave resonators built on top of insulating acoustic reflectors and operating at around 8 GHz. The acoustic reflectors are composed of alternate layers of amorphous Ta2O5and SiO2 deposited at room temperature by pulsed-DC reactive sputtering in Ar/O2 atmospheres. SiO2 layers have a porous structure that provides a low acoustic impedance of only 9.5 MRayl. Ta2O5 films exhibit an acoustic impedance of around 39.5 MRayl that was assessed by the picoseconds acoustic technique These values allow to design acoustic mirrors with transmission coefficients in the centre of the band lower than -40 dB (99.998 % of reflectance) with only seven layers. The resonators were fabricated by depositing a very thin AlN film onto an iridium bottom electrode 180 nm-thick and by using Ir or Mo layers as top electrode. Resonators with effective electromechanical coupling factors of 5.7% and quality factors at the antiresonant frequency around 600 are achieved.

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The refractive index changes induced by swift ion-beam irradiation in silica have been measured either by spectroscopic ellipsometry or through the effective indices of the optical modes propagating through the irradiated structure. The optical response has been analyzed by considering an effective homogeneous medium to simulate the nanostructured irradiated system consisting of cylindrical tracks, associated to the ion impacts, embedded into a virgin material. The role of both, irradiation fluence and stopping power, has been investigated. Above a certain electronic stopping power threshold (∼2.5 keV/nm), every ion impact creates an axial region around the trajectory with a fixed refractive index (around n = 1.475) corresponding to a certain structural phase that is independent of stopping power. The results have been compared with previous data measured by means of infrared spectroscopy and small-angle X-ray scattering; possible mechanisms and theoretical models are discussed.

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Ionoluminescence (IL) has been used in this work as a sensitive tool to probe the microscopic electronic processes and structural changes produced on quartz by the irradiation with swift heavy ions. The IL yields have been measured as a function of irradiation fluence and electronic stopping power. The results are consistent with the assignment of the 2.7 eV (460 nm) band to the recombination of self-trapped excitons at the damaged regions in the irradiated material. Moreover, it was possible to determine the threshold for amorphization by a single ion impact, as 1:7 keV/nm, which agrees well with the results of previous studies.