Simultaneous observation of the magnetic and electric behavior in a correlated system near a metal-semiconductor transition: ESR in pellets of conducting polymers

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Relationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor

The relationship between grain-boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO2 center dot COO binary polycrystalline system has been investigated by means of combined techniques such as I-V characteristic response, complex impedance and capacitance analysis and electrostatic force microscopy. The estimated role of the Nb doping is to increase the concentration of shallow donors that are capable of enhancing the electronic donation to grain-boundary acceptors. This effect leads to the formation of potential barriers at grain boundaries with a simultaneous increase of grain-boundary capacitance and non-Ohmic features of the polycrystalline device doped with Nb atoms.

Photoelectrocatalytical degradation of basic blue 41 dye using nanoporous semiconductor of Ti/TiO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

ac conductivity and conduction mechanism of NaNbO3 semiconductor antiferroelectric ceramic: A relaxational approach at high temperature

The electric properties of the sodium niobate perovskite ceramic were investigated by impedance spectroscopy in the frequency range from 5 Hz to 13 MHz and from room temperature up to 1073 K, in a thermal cycle. Both capacitance and conductivity exhibit an anomaly at around 600 K as a function of the temperature and frequency. The electric conductivity as a function of angular frequency sigma(omega) follows the relation sigma(omega)=Aomega(s). The values of the exponent s lie in the range 0.15less than or equal tosless than or equal to0.44. These results were discussed considering the conduction mechanism as being a type of polaron hopping. (C) 2003 American Institute of Physics.

Negative temperature coefficient thermistor based on Bi3Zn2Sb3O14 ceramic: An oxide semiconductor at high temperature

Bi1.5ZnSb1.5O7 dielectric ceramic with pyrochlore structure was investigated by impedance spectroscopy from 400 to 750 degreesC. Pyrochlore was synthesized by the polymeric precursor method, a chemical synthesis route derived from Pechini's method. The grain or bulk resistance exhibits a sensor temperature characteristic, being a thermistor with a negative temperature coefficient (NTC). Only a single region was identified on the resistance curve investigated. The NTC thermistor characteristic parameter (beta) is equal to 7140 degreesC, in the temperature range investigated. The temperature coefficient of the resistance (alpha) was derived, being equal to -4.46x10(-2) degreesC(-1) at 400 degreesC. The conduction mechanism and relaxation are discussed. (C) 2003 American Institute of Physics.

A semiconductor strain gage tactile transducer

This paper describes the development of a semiconductor strain gage tactile transducer. It was designed with the goal of measuring finger forces without affecting the hand dexterity. The transducer structure was manufactured with stainless steel and has small dimensions ( 4 min diameter and I min thickness). It is light and suitable to connect to the finger pads. It has a device that prevents its damage when forces are applied. The semiconductor strain gage was used over due its small size and high sensitivity, although it has high temperature sensitivity. Theory, design and construction details are presented the signal conditioning circuit is very simple because the semiconductor strain gage sensitivity is high. It presents linear response from 0 to 100 N, 0.5 N resolution, fall time of 7.2 ms, good repeatability, and small hysteresis. The semiconductor strain gage transducer has characteristics that can make it very useful in Rehabilitation Engineering, Robotics, and Medicine.

Gold electrodes from recordable CDs

Gold electrodes are widely used in electrochemistry and electroanalytical chemistry. The notable performance when used in stripping analysis of many ionic species and the extraordinary affinity of thio compounds for its surface make these electrodes very suitable for many applications. This paper reports a simple and novel way to construct gold electrodes (CDtrodes) using recordable CDs as the gold source. The nanometer thickness of the gold layer of recordable disks (50-100 mm) favors the construction of band nanoelectrodes with areas as small as 10(-6) cm(2). The plane surface can be easily used for the construction of conventional-sized gold electrodes for batch or now injection analysis or even to obtain electrodes as large as 100 cm(2). The low price of commercial recordable CDs allows a one way use. The evaluation and applicability of these electrodes in the form of nanoelectrodes, in batch and associated with flow cells, are illustrated in this paper.

Photothermal Study of Two Different Nanofluids Containing SiO2 and TiO2 Semiconductor Nanoparticles

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Metal-Organic Semiconductor Nanostructures for Surface-Enhanced Raman Scattering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influence of different solvents on the structural, optical and morphological properties of CdS nanoparticles

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures

Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V spectroscopy and spatially resolved current images (at constant bias), carried out using C-AFM in a controlled atmosphere at room temperature, show different conductances and threshold voltages for current onset on the two types of nanostructures. The processed devices were used in order to access the in-plane conductance of an assembly with a reduced number of nanostructures. On these devices, signature of two-level random telegraph noise (RTN) in the current behavior with time at constant bias is observed. These levels for electrical current can be associated to electrons removed from the wetting layer and trapped in dots and/or wires. A crossover from conduction through the continuum, associated to the wetting layer, to hopping within the nanostructures is observed with increasing temperature. This transport regime transition is confirmed by a temperature-voltage phase diagram. © 2005 Materials Research Society.

Effect of the Rashba and Dresselhaus spin-splitting terms on the electron g factor in semiconductor quantum wells under applied magnetic fields

We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined effects of non-parabolicity, anisotropy and spin-splitting terms are taken into account. Theoretical results are given as functions of the QW width and compared with available experimental data and previous theoretical works. © 2007 Elsevier B.V. All rights reserved.

Heterogeneous photocatalytic treatment of organic dyes in air and aqueous media

This review focuses on the heterogeneous photocatalytic treatment of organic dyes in air and water. Representative studies spanning approximately three decades are included in this review. These studies have mostly used titanium dioxide (TiO2) as the inorganic semiconductor photocatalyst of choice for decolorizing and decomposing the organic dye to mineralized products. Other semiconductors such as ZnO, CdS, WO3, and Fe2O3 have also been used, albeit to a much smaller extent. The topics covered include historical aspects, dark adsorption of the dye on the semiconductor surface and its role in the subsequent photoreaction, semiconductor preparation details, photoreactor configurations, photooxidation kinetics/mechanisms and comparison with other Advanced Oxidation Processes (e.g., UV/H2O2, ozonation, UV/O3, Fenton and photo-Fenton reactions), visible light-induced dye decomposition by sensitization mechanism, reaction intermediates and toxicity issues, and real-world process scenarios. © 2008 Elsevier B.V. All rights reserved.

Profilometry of semiconductor components by two-colour holography with Bi12TiO20 crystals

We studied the shape measurement of semiconductor components by holography with photorefractive Bi12TiO20 crystal as holographic medium and two diode lasers emitting in the red region as light sources. By properly tuning and aligning the lasers a synthetic wavelength was generated and the resulting holographic image of the studied object appears modulated by cos2-contour fringes which correspond to the intersection of the object surface with planes of constant elevation. The position of such planes as a function of the illuminating beam angle and the tuning of the lasers was studied, as well as the fringe visibility. The fringe evaluation was performed by the four stepping technique for phase mapping and through the branch-cut method for phase unwrapping. A damage in an integrated circuit was analysed as well as the relief of a coin was measured, and a precision up to 10 μm was estimated. © 2009 SPIE.