1000 resultados para SEMICONDUCTOR ALLOYS


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Assembly consisting of cast and wrought aluminum alloys has wide spread application in defense and aero space industries. For the efficacious use of the transition joints, the weld should have adequate strength and formability. In the present investigation, A356 and 6061 aluminum alloys were friction stir welded under tool rotational speed of 1000-1400 rpm and traversing speed of 80-240 mm/min, keeping other parameters same. The variable process window is responsible for the change in total heat input and cooling rate during welding. Structural characterization of the bonded assemblies exhibits recovery-recrystallization in the stirring zone and breaking of coarse eutectic network of Al-Si. Dispersion of fine Si rich particles, refinement of 6061 grain size, low residual stress level and high defect density within weld nugget contribute towards the improvement in bond strength. Lower will be the tool rotational and traversing speed, more dominant will be the above phenomena. Therefore, the joint fabricated using lowest tool traversing and rotational speed, exhibits substantial improvement in bond strength (similar to 98% of that of 6061 alloy), which is also maximum with respect to others. (C) 2010 Elsevier Ltd. All rights reserved.

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Micromachined antennas are recieving great interest as carrier frequencies move higher into the frequency spectrum due to their superior performance and amenability for integration with active devices. However their design is cumbersome owing to the complexity of the structure. To overcome this, in this paper, an iterative procedure is suggested to facilitate fast design of micromachined patch antennas based on a simulation study. A microstrip line on a micromachined Silicon substrate is simulated in a full wave simulator by solving for the ports only. From the obtained propagation constant, the effective dilectric constant for the micromachined substrate is estimated. The process is repeated for a number of values of the width of the microstrip and a plot is made for the variation of the effective dielectric constant with the microstrip width. Then an iterative method in combination with the extrapolated permittivity which includes the effect of cavity extensions in all the directions, is used to obtain the width and the corresponding effective dielectric constant. This method has been verified to be quite accurate by comparison with full wave simulations and hence it can function as a good starting point for designers to design micromachined antennas.

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From the quaternary Ti-Zr-Hf-Ni phase diagram. the cross-section at 20 at % Ni was selected for investigation. The icosahedral quasicrystalline, crystalline and amorphous phases were observed to form in nine kinds of rapidly solidified (TixZryHfz)(80)Ni-20 (x + y + z = 1) alloys at different compositions. The quasilattice constants of 0.519 and 0.531 nm were obtained for the icosahedral phase formed in the melt-spun Ti40Zr20Hf20Ni20 and Ti20Zr40Hf20Ni20 alloys. respectively. The icosahedral phase formed in the melt-spun Ti40Zr20Hf20Ni20 alloy especially is thermodynamically stable. The supercooled liquid region of the Ti20Zr20Hf40Ni20 glassy alloy reached 64 K. From these results a comparison of quasicrystal-forming and glass-forming abilities, was carried out. The quasicrystal-forming ability was reduced and glass-forming ability was improved with an increase in Hf and Zr contents in the (TixZryHfz)(80)Ni-20 alloys. On the other hand. an increase in Ti content caused an improvement in quasicrystal-forming ability.

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The Ramberg-Osgood relation which adequately describes the stress-strain curve of a strain-hardening material is extended to formulate the constitutive laws for creep. The constitutive laws which describe primary creep adequately are extended to secondary creep. The results are verified for the case of R.R. 59 at 200°C, Nimonic 80A and Nimonic 90 alloys at 750°C.

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The dislocation mechanisms for plastic flow in quenched AlMg alloys with 0.45, 0.9, 2.7 and 6.4 at. % Mg were investigated using tensile tests and change-in-stress creep experiments in the temperaturhttp://eprints.iisc.ernet.in/cgi/users/home?screen=EPrint::Edit&eprintid=28109&stage=core#te range 87° -473° K. The higher the magnesium content in the alloy, the higher was the temperature dependence of flow stress. The alloys showed no perceptible creep in the vicinity of room temperature, while they crept at lower as well as higher temperatures. The most probable cause of hardening at temperatures below ∼ 200° K was found to be the pinning of dislocations by randomly distributed solute atoms, while athermal locking of dislocations by dynamic strain ageing during creep was responsible for the negligibly small creep rate in the room temperature range.

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Resistometric studies of isochronal and isothermal annealing of an Al-0.64 at.% Ag alloy have given a value of 0.13 ± 0.02 eV for the silver-vacancy binding energy and 0.55 ± 0.03 eV for the migration energy of solute atoms.

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Superplastic materials exhibit very large elongations to failure,typically >500%, and this enables commercial forming of complex shaped components at slow strain rates of similar to 10(-4) s(-1). We report extraordinary record superplastic elongations to failure of up to 5300% at both high strain rates and low temperature in electrodeposited nanocrystalline Ni and some Ni alloys. Superplasticity is not related to the presence of sulfur or a low melting phase at grain boundaries. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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Thin films are the basis of much of recent technological advance, ranging from coatings with mechanical or optical benefits to platforms for nanoscale electronics. In the latter, semiconductors have been the norm ever since silicon became the main construction material for a multitude of electronical components. The array of characteristics of silicon-based systems can be widened by manipulating the structure of the thin films at the nanoscale - for instance, by making them porous. The different characteristics of different films can then to some extent be combined by simple superposition. Thin films can be manufactured using many different methods. One emerging field is cluster beam deposition, where aggregates of hundreds or thousands of atoms are deposited one by one to form a layer, the characteristics of which depend on the parameters of deposition. One critical parameter is deposition energy, which dictates how porous, if at all, the layer becomes. Other parameters, such as sputtering rate and aggregation conditions, have an effect on the size and consistency of the individual clusters. Understanding nanoscale processes, which cannot be observed experimentally, is fundamental to optimizing experimental techniques and inventing new possibilities for advances at this scale. Atomistic computer simulations offer a window to the world of nanometers and nanoseconds in a way unparalleled by the most accurate of microscopes. Transmission electron microscope image simulations can then bridge this gap by providing a tangible link between the simulated and the experimental. In this thesis, the entire process of cluster beam deposition is explored using molecular dynamics and image simulations. The process begins with the formation of the clusters, which is investigated for Si/Ge in an Ar atmosphere. The structure of the clusters is optimized to bring it as close to the experimental ideal as possible. Then, clusters are deposited, one by one, onto a substrate, until a sufficiently thick layer has been produced. Finally, the concept is expanded by further deposition with different parameters, resulting in multiple superimposed layers of different porosities. This work demonstrates how the aggregation of clusters is not entirely understood within the scope of the approximations used in the simulations; yet, it is also shown how the continued deposition of clusters with a varying deposition energy can lead to a novel kind of nanostructured thin film: a multielemental porous multilayer. According to theory, these new structures have characteristics that can be tailored for a variety of applications, with precision heretofore unseen in conventional multilayer manufacture.

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The purpose of this study is to experimentally investigate the interaction of inelastic deformation and microstructural changes of two Zr-based bulk metallic glasses (BMGs): Zr41.25Ti13.75Cu12.5Ni10Be22.5 (commercially designated as Vitreloy 1 or Vit1) and Zr46.75Ti8.25Cu7.5Ni10Be27.5 (Vitreloy 4, Vit4). High-temperature uniaxial compression tests were performed on the two Zr alloys at various strain rates, followed by structural characterization using differential scanning calorimetry (DSC) and transmission electron microscopy (TEM). Two distinct modes of mechanically induced atomic disordering in the two alloys were observed, with Vit1 featuring clear phase separation and crystallization after deformation as observed with TEM, while Vit4 showing only structural relaxation with no crystallization. The influence of the structural changes on the mechanical behaviors of the two materials was further investigated by jump-in-strain-rate tests, and flow softening was observed in Vit4. A free volume theory was applied to explain the deformation behaviors, and the activation volumes were calculated for both alloys.