Impact of Template Layers on Dielectric and Electrical Properties of Pulsed-Laser Ablated Pb(Mg1/3 Nb2/3)O3 - PbTiO3 Thin Films

A study was done on pulsed laser deposited relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) deposited on platinized silicon substrates with template layers to observe the influence of the template layers on physical and electrical properties. Initial results, showed that perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on Pt/Ti/SiO2/Si substrates. The films were grown at 300°C and then annealed in a rapid thermal annealing furnace in the temperature range of 750-850°C to induce crystallization. Comparison of the films annealed at different temperatures revealed a change in crystallinity, perovskite phase formation and grain size. These results were further used to improve the quality of the perovskite PMN-PT phase by inserting thin layers of TiO2 on the Pt substrate. These resulted in an increase in perovskite phase in the films even at lower annealing temperatures. Dielectric studies on the PMN-PT films show very high values of dielectric constant (1300) at room temperature, which further improved with the insertion of the template seed layer. The relaxor properties of the PMN-PT were correlated with Vogel-Fulcher theory to determine the actual nature of the relaxation process.

Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti62.5Si37.5 thin films during Xe ion irradiation

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe+ ion beam to an ion fluence of about 1016 ions-cm−2. Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti5Si3 intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

Role of La0.5Sr0.5COO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb(Nb2/3Mg1/3)O-3-PbTiO3 thin films

Relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) deposited on platinized silicon substrates with and without template layers were studied. Perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on bare Pt/Ti/SiO2/Si substrates. The films were initially grown at 300 degreesC using pulsed-laser ablation and subsequently annealed in a rapid thermal annealing furnace in the temperature range of 750-850 degreesC to induce crystallization. Comparison of microstructure of the films annealed at different temperatures showed change in perovskite phase formation and grain size etc. Results from compositional analysis of the films revealed that the films initially possessed high content of lead percentage, which subsequently decreased after annealing at temperature 750-850 degreesC. Films with highest perovskite content were found to form at 820-840 degreesC on Pt substrates where the Pb content was near stoichiometric. Further improvement in the formation of perovskite PMN-PT phase was obtained by using buffer layers of La0.5Sr0.5CoO3 (LSCO) on the Pt substrate. This resulted 100% perovskite phase formation in the films deposited at 650 degreesC. Dielectric studies on the PMN-PT films with LSCO template layers showed high values of relative dielectric constant (3800) with a loss factor (tan delta) of 0.035 at a frequency of 1 kHz at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Leakage current behavior in pulsed laser deposited Ba(Zr0.05Ti0.95)O3 thin films

Barium zirconium titanate [Ba(Zr0.05Ti0.95)O3, BZT] thin films were prepared by pulsed laser ablation technique and dc leakage current conduction behavior was extensively studied. The dc leakage behavior study is essential, as it leads to degradation of the data storage devices. The current-voltage (I-V) of the thin films showed an Ohmic behavior for the electric field strength lower than 7.5 MV/m. Nonlinearity in the current density-voltage (J-V) behavior has been observed at an electric field above 7.5 MV/m. Different conduction mechanisms have been thought to be responsible for the overall I-V characteristics of BZT thin films. The J-V behavior of BZT thin films was found to follow Lampert’s theory of space charge limited conduction similar to what is observed in an insulator with charge trapping moiety. The Ohmic and trap filled limited regions have been explicitly observed in the J-V curves, where the saturation prevailed after a voltage of 6.5 V referring the onset of a trap-free square region. Two different activation energy values of 1.155 and 0.325 eV corresponding to two different regions have been observed in the Arrhenius plot, which was attributed to two different types of trap levels present in the film, namely, deep and shallow traps.

Surface amorphous and crystalline microstructure by alloying zirconium using Nd : YAG pulsed laser

A novel composite coating was synthesized by laser alloying of zirconium nanoparticles on an austenite stainless steel surface using a pulsed Nd:YAG laser. The coating contained duplex microstructures comprising an amorphous phase and an austenitic matrix. A discontinuous zirconium-containing region formed at a depth of 16 mum below the surface. The amorphous phase was present in the zirconium-rich region, with the composition of zirconium ranging from 7.8 to 14.5 at. pet. The formation of the amorphous phase was attributed to the zirconium addition. The hardness, corrosion, and wear-corrosion resistance of the irradiated coating were evidently enhanced compared to those of the stainless steel.

Microstructure of Zr-alloyed coating using pulsed laser

Coatings were synthesized by laser alloying of zirconium (Zr) particles using a pulsed Nd:YAG laser on an austenite stainless steel. The distribution of Zr is uneven, in a depth of 18 mum just below the surface of the pool. The coating consisted of duplex microstructures, i.e. metallic glass (MG) and austenite. The MG formed in Zr-contained regions, with the Zr composition ranging from 7.6 to 16.8 at.%. The formation of the MG was attributed to an increase in glass-forming ability by Zr addition.

Numerical Simulation on the Micro-Scale Bending Induced by Pulsed Laser Beam

利用自行研制的含热传导、冲击动力学大、变形有限元程序,模拟了小尺寸梁在脉冲激光加热条件下的变形过程。在此基础上,利用商用程序模拟了冷却及残余应力的产生,研究了激光参数（强度及分布）等对于微弯曲的影响。数值模拟结果与文献中的实验观察相吻合。

Numerical simulation of temperature field evolution of metallic alloy surface due to pulsed laser treatment

This paper performed a numerical simulation on temperature field evolution for the surface layer of a metallic alloy subjected to pulsed Nd:YAG laser treatment. The enthalpy method was adopted to solve the moving boundary problem, I.e. Stefan problem. Computational results were obtained to show the temperature field evolution. Effects of latent heat and mushy zone width on the temperature field were investigated. The results also show very high values of temperature gradient and cooling rate, which are typical characteristics during the solidification process.

Long pulsed laser induced reverse bulging and plugging

A new kind of failure mode is observed in circular brass foils whose peripheries are fixed and whose surfaces are subjected to a long pulsed laser over a central region. The failure is classified into three stages; they are referred to as thermal bulging, localized shear deformation and perforation by plugging. A distinct feature of the failure mode is that bulging and plugging occurred in the direction opposite to the incident laser beam. The failure mode is different from the well-known types of laser induced material damage, such as spallation, melting and/or vaporization.

Numerical Simulation of Pulsed Laser Transformation Hardening

A novel pulsed laser surface processing technology is introduced, which can make use of the spatial and temporal profile of laser pulse to obtain ideal hardening parameters. The intensity distribution of laser pulse is spatially and temporally controlled by using laser shape transformation technology. A 3D numerical model including multi-phase transformations is established to explore material microstructure evolution induced by temperature field evolution. The influences of laser spatial-temporal profiles on hardening parameters are investigated. Different from the continuous laser processing technology, results indicate that spatial and temporal profiles are important factors in determining processing quality during pulsed laser processing method.

Coherence measurement of a Ti:sapphire femtosecond pulsed laser

The interference patterns produced by Gaussian-shaped broad-bandwidth femtosecond pulsed laser sources are derived. The interference pattern contains both spatial and temporal properties of laser beam. Interference intensity dependent on the bandwidth of femtosecond laser are given. We demonstrate experimentally both the spatial and the temporal coherence properties of a Ti:sapphire femtosecond pulse laser, as well as its power spectrum by using a pinhole pair.

Magnetic field modulated direct overwrite with pulsed laser irradiation for TbFeCo magneto-optical disks

WE have designed a dual-beam magneto-optical (MO) storage system to test the dynamic storage properties of MO disks. The characteristics of this dual-beam system are demonstrated. Magnetic field modulated direct overwrite, which is a promising technique for highspeed MO storage, is realized on TbFeCo MO disks with this dual-beam MO system. The effect of light intensity, magnetic field intensity, and linear velocity of the disk and the modulating frequency variation on carrier-to-noise ratio is investigated. (C) 1997 Society of Photo-Optical Instrumentation Engineers.