Research on the influence of fabrication parameters on the performance of buried ion-exchanged glass waveguides using the variational method

The variational method is proposed to analyze the influence of the fabrication parameters on the performance of buried K+-Na+ ion-exchanged Er3+-Yb3+ ions co-doped glass waveguide. The unknown parameters of the Hermite-Gaussian functions as the trial field distribution are determined based on the scalar variational principle. It is demonstrated that the results calculated in this paper agree with those measured in the experiment. The mode dimensions, the effective refractive index, and the overlap factor as the functions of the fabrication parameters are investigated. These results of the variational analysis are useful for the design and optimization of Er3+-Yb3+ ions co-doped waveguides.

Design of quantum cascade microcavity lasers based on Q factor versus etching depth

The choice of the etching depth for semiconductor microcavities is a compromise between a high Q factor and a difficult technique in a practical fabricating process. In this paper, the influences of the etching depth on mode Q factors for mid-infrared quantum cascade microcylinder and microsquare lasers around 4.8 and 7.8 mu m are simulated by three-dimensional (3D) finite-difference time-domain (FDTD) techniques. For the microcylinder and the microsquare resonators, the mode Q factors of the whispering-gallery modes (WGMs) increase exponentially and linearly with the increase in the etching depth, respectively Furthermore, the mode Q factors of some higher order transverse WGMs may be larger than that of the fundamental transverse WGM in 3D microsquares. Based on the field distribution of the vertical multilayer slab waveguide and the mode Q factors versus the etching depth, the necessary etching depth is chosen at the position where the field amplitude is 1% of the peak value of the slab waveguide. In addition, the influences of sidewall roughness on the mode Q factors are simulated for microsquare resonators by 2D FDTD simulation. (C) 2009 Optical Society of America

A mini-staged multi-stacked quantum cascade laser for improved optical and thermal performance

In this paper, a mini-staged multi-stacked quantum cascade laser structure with a designed wavelength of 4.7 mu m is presented. By introducing five 0.5 mu m thick high thermal conductivity InP interbuffer layers, the 60-stages active region core of the quantum cascade laser is divided into six equal parts. Based on simulation, this kind of quantum cascade laser with a 10 mu m ridge width gives nearly circular two-dimensional far-field distribution (FWHM = 32.8 degrees x 29 degrees) and good beam quality parameters M-2 = 1.32 x 1.31 in the fast axis (growth direction) and the slow axis (lateral direction). Due to the enhancement of lateral heat extraction through the interbuffer layers, compared to the conventional structure, a decrease of about 5-6% for the maximum temperature in the active region core of the mini-staged multi-stacked quantum cascade laser with indium-surrounded and gold-electroplated packaging profiles is obtained at all possible dissipated electrical power levels.

Mode Analysis for Equilateral-Triangle-Resonator Microlasers with Metal Confinement Layers

Mode characteristics are analyzed for electrically injected equilateral-triangle-resonator (ETR) semiconductor microlasers, which are laterally confined by insulating barrier SiO2 and electrode metals Ti-Au. For the ETR without metal layers, the totally confined mode field patterns are derived based on the reflection phase shifts, and the Q-factors are calculated from the far-field emission of the analytical near field distribution, which are agreement very well with the numerical results of the finite-difference time-domain (FDTD) simulation. The polarization dependence reflections for light rays incident on semiconductor-SiO2 -Ti-Au multi-layer structures are accounted in considering the confinement of TE and TM modes in the ETR with the metal layers. The reflectivity will greatly reduce with a Ti layer between SiO2 and Au for light rays with incident angle less than 30 especially for the TE mode, even the thickness of the Ti layer is only 10 nm. If the ETR is laterally confined by SiO2-Au layers without the Ti layer, the Fabry-Perot type modes with an incident angle of zero on one side of the ETR can also have high Q-factor. The FDTD simulation for the ETR confined by metal layers verifies the above analysis based on multi-layer reflections. The output spectra with mode intervals of whispering-gallery modes and Fabry-Perot type modes are observed from different ETR lasers with side length of 10 m, respectively.

Two-dimensional simulation of high-order laterally-coupled GaAs-AlGaAs DFB laser diodes

Laterally-coupled distributed feedback (LC-DFB) laser diodes made without an epitaxial re-growth process have the advantage of a simple fabrication process. In this paper, two-dimensional optical field distribution of the fundamental quasi TE (transverse electric) mode is calculated by means of a semivectorial finite-difference method (SV-FDM). The dependence of the effective coupling coefficient (kappa(eff)) on the dutycycle of first-, second- and third-order LC-DFB LDs is investigated using modified coupled wave equations.

Analysis of modes in a freestanding microsquare resonator by 3-D finite-difference time-domain

Modes in a microsquare resonator slab with strong vertical waveguide consisting of air/semiconductor/air are analyzed by three-dimensional (3-D) finite-difference time-domain simulation, and compared with that of two-dimensional (2-D) simulation under effective index approximation. Mode frequencies and field distributions inside the resonator obtained by the 3-D simulation are in good agreement with those of the 2-D approximation. However, field distributions at the boundary of the resonator obtained by 3-D simulation are different from that of the 2-D simulation, especially the vertical field distribution near the boundary is great different from that of the slab waveguide, which is used in the effective index approximation. Furthermore the quality factors obtained by 3-D simulation are much larger. than that by 2-D simulation for the square resonator slab with the strong vertical waveguide.

Mode analysis and Q-factor enhancement due to mode coupling in rectangular resonators

Modes in rectangular resonators are analyzed and classified according to symmetry properties, and quality factor (Q-factor) enhancement due to mode coupling is observed. In the analysis, mode numbers p and q are used to denote the number of wave nodes in the direction of two orthogonal sides. The even and odd mode numbers correspond to symmetric and antisymmetric field distribution relative to the midlines of sides, respectively. Thus, the modes in a rectangle resonator can be divided into four classes according to the parity of p and q. Mode coupling between modes of different classes is forbidden; however, anti-crossing mode coupling between the modes in the same class exists and results in new modes due to the combination of the coupled modes. One of the combined modes has very low power loss and high Q-factor based on far-field emission of the analytical field distribution, which agrees well with the numerical results of the finite-difference time-domain (FDTD) simulation. Both the analytical and FDTD results show that the Q-factors of the high Q-factor combined modes are over one order larger than those of the original modes. Furthermore, the general condition required to achieve high-Q modes in the rectangular resonator is given based on the analytical solution.

The strain distributions and carrier's confining potentials of self-organized InAs/GaAs quantum dot

On the basis of the finite element approach, we systematically investigated the strain field distribution of conical-shaped InAs/GaAs self-organized quantum dot using the two-dimensional axis-symmetric model. The normal strain, the hydrostatic strain and the biaxial strain components along the center axis path of the quantum dots are analyzed. The dependence of these strain components on volume, height-over-base ratio and cap layer (covered by cap layer or uncovered quantum dot) is investigated for the quantum grown on the (001) substrate. The dependence of the carriers' confining potentials on the three circumstances discussed above is also calculated in the framework of eight-band k (.) p theory. The numerical results are in good agreement with the experimental data of published literature.

Detect the sub-wavelength data by applying a very-small-aperture laser

We present a theoretical and experimental research about applying a very-small-aperture laser (VSAL) to detect sub-wavelength data. Near-field distribution of a VSAL, which is essential for the application of such near-field devices, will be affected by the sample or fiber posited in the near-field region of the aperture. When the device is applied to detect the sub-wavelength data, the real resolution depends on the near-field spot size, the divergent angle of the beam and the distance from the aperture to the sample. Experimental results, including the near-field detection of the spot and detection of the sub-wavelength data by using the VSAL, are presented in this paper. We realize the two dimensional scanning about the sub-wavelength data (with the width 600 nm) by employing a VSAL with a 300 nm x 300 nm aperture.

Mode characteristics for equilateral triangle optical resonators

Mode characteristics of equilateral triangle resonators (ETRs) are analyzed based on the symmetry operation of the point group C-3v. The results show that doubly degenerate eigenstates can be reduced to the A(1) and A(2) representations of C-3v, if the longitudinal mode number is a multiple of 6; otherwise, they form the E irreducible representation Of C-3v. And the one-period length for the mode light ray is half of the perimeter of the ETR. Mode Q-factors are calculated by the finite-difference time-domain (FDTD) technique and compared with those calculated from far-field emission based on the analytical near-field pattern for TE and TM modes. The results show that the far-field emission based on the analytical field distribution can be used to estimate the mode Q-factor, especially for TM modes. FDTD numerical results also show that Q-factor of TE modes reaches maximum value as the longitudinal mode number is a multiple of 7. In addition, photoluminescence spectra and measured Q-factors are presented for fabricated ETR with side lengths of 20 and 30 mu m, and the mode wavelength intervals are compared with the analytical results.

Radiation forces of a highly focused radially polarized beam on spherical particles

A radially polarized beam focused by a high-numerical-aperture (NA) objective has a strong longitudinal and nonpropagating electric field in the focal region, which implies that it is suitable for axial optical trapping. In this paper, we use the vectorial diffraction integral to represent the field distribution of the radially polarized beam focused by a high-NA objective and then employ the T-matrix method to compute the radiation forces on spherical particles. Effects of different parameters, such as the size of the sphere, the inner radius of the radially polarized beam, and the NA of the objective, on the radiation forces are presented.

Trapping of low-refractive-index particles with azimuthally polarized beam

Azimuthally polarized beams, focused by a high-numerical-aperture (NA) objective lens, form a hollow intensity distribution near the focus, which is appropriate for trapping low-refractive-index particles, in contrast to common linearly polarized or radially polarized beams. In this paper, the field distribution of the azimuthally polarized beam focused by a high-NA objective is described by the vectorial diffraction integral, and then the radiation forces on spherical particles with different parameters such as radius and refractive index are calculated by the T-matrix method. Numerical results show that the azimuthally polarized beam not only can steadily trap low-refractive-index particles at the focus center but also can trap multiple high-refractive-index particles around the focus center by virtue of the hollow-ring configuration. The range of the sizes of low-refractive-index particles that can be trapped steadily are presented, corresponding to different parameters such as the NA of the objective and the relative refractive index, based on which the NA of the objective can be selected to trap the appropriate size of particles. (C) 2009 Optical Society of America

A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression

A Geiger mode planar InGaAs/InP avalanche photodiode （APD） with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced to 54.3V by controlling the central junction depth, while the electric field distribution along the device central axis is controlled by adjusting doping level and thickness of the lnP field control layer. Using a cascade junction structure at the periphery of the active area, premature edge breakdowns are effectively suppressed. The simulations show that the quadra-cascade structure is a good trade-off between suppression performance and fabrication complexity, with a reduced peak electric field of 5.2 × 10~5 kV/cm and a maximum hole ionization integral of 1. 201. Work presented in this paper provides an effective way to design high performance photon counting InGaAs/InP avalanche photodiodes.

Eigenmode confinement in semiconductor microcavity lasers with an equilateral triangle resonator

We analyze the mode behaviors for semiconductor lasers with an equilateral triangle resonator by deriving the mode field distribution and the eigenvalue equation. The eigenvalue equation shows that the longitudinal mode wavelength interval is equivalent to that of a Fabry-Perot cavity with the cavity length of 1.5a, where a is the side length of the equilateral triangle resonator. The transverse waveguiding is equivalent to as a strip waveguide with the width of root 3a/ 2, and the number of transverse modes supported by the resonator is limited by the total reflection condition on the sides of the equilateral triangle. Semiconductor microcavity laser with an equilateral triangle resonator is suitable to realize single mode operation, and the mode wavelength can be adjusted by changing the side length.

两井条件下圆形封闭煤层中压力场分布研究

煤层气开采方式的本质是排水降压采气,了解煤层的降压效果对排采制度的确定有着积极的意义。通过建立圆形封闭煤层中考虑煤层气解吸作用的两井不定常渗流模型,利用有限元方法求得了其数值解,分析解吸作用对理论特征曲线的影响。计算结果表明,煤层气解吸具有减缓压力传播的作用;分析不同性质邻井对理论曲线特征的影响,给出存在邻井影响时的压力场发展规律。提出压力场的4种描述方法,分析邻井性质、邻井流量变化,以及外边界性质对煤层压力场分布的影响,得到不同条件下煤层气压力场的变化规律。