Co3M2S2 (M ¼ Sn, In) shandites as tellurium-free thermoelectrics

Chemical substitution in Co3Sn2-xInxS2 (0 # x # 2) enables tuning of the Fermi level within narrow bands of Co d-states. This results in a compositionally induced double metal–semiconductor–metal transition and manipulation of the thermoelectric power factor. The maximum power factor (14 mW cm-1 K-2) is found for x ¼ 0.85, which corresponds to ZT z 0.2 at 300 K.

Synthesis, structural characterisation and thermoelectric properties of Bi1−xPbxOCuSe

The effect of Pb2+ doping on the structure and thermoelectric properties of BiOCuSe (also known as BiCuSeO or BiCuOSe) is described. With increasing Pb2+ content, the expansion of the unit cell results in a weakening of the bonding between the [Bi2(1-x) Pb2xO2]2(1-x)+ and the [Cu2Se2]2(1-x)- layers. The electrical resistivity and Seebeck coefficient decrease in a systematic way with growing Pb2+ levels. The thermal conductivity rises due to the increase of the electronic contribution with doping. The power factor of materials with a 4-5% Pb2+ content takes values of ca. 8 W cm-1 K-2 over a wide temperature range. ZT at 673 K is enhanced by ca. 50% when compared to values found for other dopants, such as Sr2+ or Mg2+.

Low-Frequency Noise in Field-Effect Devices Functionalized With Dendrimer/Carbon-Nanotube Multilayers

Low-frequency noise in an electrolyte-insulator- semiconductor (EIS) structure functionalized with multilayers of polyamidoamine (PAMAM) dendrimer and single-walled carbon nanotubes (SWNT) is studied. The noise spectral density exhibits 1/f(gamma) dependence with the power factor of gamma approximate to 0.8 and gamma = 0.8-1.8 for the bare and functionalized EIS sensor, respectively. The gate-voltage noise spectral density is practically independent of the pH value of the solution and increases with increasing gate voltage or gate-leakage current. It has been revealed that functionalization of an EIS structure with a PAMAM/SWNTs multilayer leads to an essential reduction of the 1/f noise. To interpret the noise behavior in bare and functionalized EIS devices, a gate-current noise model for capacitive EIS structures based on an equivalent flatband-voltage fluctuation concept has been developed.

Voltage regulation in renewable energy integration into the distribution network

Large-scale renewable energy (RE) integration into the distribution network (DN) causes uncertainties due to its intermittent nature and is a challenging task today. In general RE sources are mostly connected near the end user level, i.e., in the low voltage distribution network. RE integration introduces bi-directional power flows across distribution transformer (DT) and hence DN experiences with several potential problems that includes voltage fluctuations, reactive power compensation and poor power factor in the DN. This study identifies the potential effects causes due to large-scale integration of RE into the Berserker Street Feeder, Frenchville Substation under Rockhampton DN. From the model analyses, it has clearly evident that voltage of the Berserker Street Feeder fluctuates with the increased integration of RE and causes uncertainties in the feeder as well as the DN.

Improving fault ride through capability of DFIG during RSC flashover fault

Wind power generation is growing rapidly. However, maintaining the wind turbine connection to grid is a real challenge. Recent grid codes require wind turbines to maintain connected to the grid even during fault conditions which increases concerns about its sensitivity to external faults. So, researchers have given attention to investigating the impact of various external faults, and grid disturbances such as voltage sag and short circuit faults, on the fault ride through (FRT) capability of the doubly fed induction generator (DFIG). However, no attention has been given to the impact of internal faults on the dynamic performance of the machine when the fault occurs within the voltage source converters (VSCs) that interface the DFIG with the grid. This paper investigates the impact of the rotor side converter (RSC) IGBT flashover fault on the common coupling (PCC) reactive power and the FRT is proposed. The DFIG compliance with numerous and recently released FRT grid codes under the studied fault, with and without the STATCOM are examined and compared. Furthermore, the capability of a proposed controller to bring the voltage profile at the point of PCC to the nominal steady-state level; maintain the unity power factor operation; and, maintain the connection of the wind turbine to the grid are examined

Experimental and simulation study of the impact of increased photovoltaic integration with the grid

The abundance, availability, and climate-friendly characteristics of solar photovoltaic (PV) energy encourage nations around the globe to adopt it to assist in overcoming global warming as well as build a sustainable society for the future. The intermittent nature of solar energy generation and the associated power electronic inverters with connected consumer loads creates a number of potential challenges in integrating large-scale PV into the grid that affects power quality of the distribution networks. This paper investigates the impacts of varying PV integration into the grid through experimental and simulation studies. Initially, several experiments were conducted with varying PV penetration and load conditions using the Renewable Energy Integration Facility at CSIRO, Newcastle, Australia. Later, a simulation model was developed that mimics the experimental facility used at CSIRO to investigate the adverse impacts on integrating large-scale PV into the grid using the power system simulation software PSS Sincal. Experimental and simulation analyses clearly indicate that integration of PV into the grid causes power quality issues such as voltage instability, harmonic injection, and low power factor into the networks and the level of these impacts increases with the increase of PV penetration. © 2014 AIP Publishing LLC.

Facile preparation and thermoelectric properties of Bi₂Te₃ based alloy nanosheet/PEDOT:PSS composite films

Bi2Te3 based alloy nanosheet (NS)/poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) composite films were prepared separately by spin coating and drop casting techniques. The drop cast composite film containing 4.10 wt % Bi2Te3 based alloy NSs showed electrical conductivity as high as 1295.21 S/cm, which is higher than that (753.8 S/cm) of a dimethyl sulfoxide doped PEDOT:PSS film prepared under the same condition and that (850-1250 S/cm) of the Bi2Te3 based alloy bulk material. The composite film also showed a very high power factor value, ∼32.26 μWm(-1) K(-2). With the content of Bi2Te3 based alloy NSs increasing from 0 to 4.10 wt %, the electrical conductivity and Seebeck coefficient of the composite films increase simultaneously.

Synthesis of Al-doped Mg2Si1-xSnx compound using magnesium alloy for thermoelectric application

Abstract Mg2Si1-xSnx thermoelectric compounds were synthesized through a solid-state reaction at 700 °C between chips of Mg2Sn-Mg eutectic alloy and silicon fine powders. The Al dopants were introduced by employing AZ31 magnesium alloy that contains aluminum. The as-synthesized Mg2Si1-xSnx powders were consolidated by spark plasma sintering at 650-700 °C. X-ray diffraction and scanning electron microscopy revealed that the Mg2Si1-xSnx bulk materials were comprised of Si-rich and Sn-rich phases. Due to the complex microstructures, the electrical conductivities of Mg2Si1-xSnx are lower than Mg2Si. As a result, the average power factor of Al0.05Mg2Si0.73Sn0.27 is about 1.5 × 10^-3 W/mK² from room temperature to 850 K, being less than 2.5 × 10^-3 W/mK² for Al0.05Mg2Si. However, the thermal conductivity of Mg2Si1-xSnx was reduced significantly as compared to Al0.05Mg2Si, which enabled the ZT of Al0.05Mg2Si0.73Sn0.27 to be superior to Al0.05Mg2Si. Lastly, the electric power generation from one leg of Al0.05Mg2Si and Al0.05Mg2Si0.73Sn0.27 were evaluated on a newly developed instrument, with the peak output power of 15-20 mW at 300 °C hot-side temperature.

Técnicas de simplificação de redes e otimização multiobjetivo para análise de variações de tensão em regime permanente provocadas por parques eólicos integrados ao sistema elétrico

This study presents a description of the development model of a representation of simplified grid applied in hybrid load flow for calculation of the voltage variations in a steady-state caused by the wind farm on power system. Also, it proposes an optimal load-flow able to control power factor on connection bar and to minimize the loss. The analysis process on system, led by the wind producer, it has as base given technician supplied by the grid. So, the propose model to the simplification of the grid that allows the necessity of some knowledge only about the data referring the internal network, that is, the part of the network that interests in the analysis. In this way, it is intended to supply forms for the auxiliary in the systematization of the relations between the sector agents. The model for simplified network proposed identifies the internal network, external network and the buses of boulders from a study of vulnerability of the network, attributing them floating liquid powers attributing slack models. It was opted to apply the presented model in Newton-Raphson and a hybrid load flow, composed by The Gauss-Seidel method Zbarra and Summation Power. Finally, presents the results obtained to a developed computational environment of SCILAB and FORTRAN, with their respective analysis and conclusion, comparing them with the ANAREDE

Uma fonte chaveada de 50kW com correção de fator de potência para alimentação de uma tocha de plasma Indutiva utilizando técnicas de controle digital

This work deals with the development of an experimental study on a power supply of high frequency that provides the toch plasmica to be implemented in PLASPETRO project, which consists of two static converters developed by using Insulated Gate Bipolar Transistor (IGBT). The drivers used to control these keys are triggered by Digital Signal Processor (DSP) through optical fibers to reduce problems with electromagnetic interference (EMI). The first stage consists of a pre-regulator in the form of an AC to DC converter with three-phase boost power factor correction which is the main theme of this work, while the second is the source of high frequency itself. A series-resonant inverter consists of four (4) cell inverters operating in a frequency around 115 kHz each one in soft switching mode, alternating itself to supply the load (plasma torch) an alternating current with a frequency of 450 kHz. The first stage has the function of providing the series-resonant inverter a DC voltage, with the value controlled from the power supply provided by the electrical system of the utility, and correct the power factor of the system as a whole. This level of DC bus voltage at the output of the first stage will be used to control the power transferred by the inverter to the load, and it may vary from 550 VDC to a maximum of 800 VDC. To control the voltage level of DC bus driver used a proportional integral (PI) controller and to achieve the unity power factor it was used two other proportional integral currents controllers. Computational simulations were performed to assist in sizing and forecasting performance. All the control and communications needed to stage supervisory were implemented on a DSP

Técnica de controle adaptativo robusto aplicada a filtros ativos de potência e paralelo

The Methods for compensation of harmonic currents and voltages have been widely used since these methods allow to reduce to acceptable levels the harmonic distortion in the voltages or currents in a power system, and also compensate reactive. The reduction of harmonics and reactive contributes to the reduction of losses in transmission lines and electrical machinery, increasing the power factor, reduce the occurrence of overvoltage and overcurrent. The active power filter is the most efficient method for compensation of harmonic currents and voltages. The active power filter is necessary to use current and voltage controllers loop. Conventionally, the current and voltage control loop of active filter has been done by proportional controllers integrative. This work, investigated the use of a robust adaptive control technique on the shunt active power filter current and voltage control loop to increase robustness and improve the performance of active filter to compensate for harmonics. The proposed control scheme is based on a combination of techniques for adaptive control pole placement and variable structure. The advantages of the proposed method over conventional ones are: lower total harmonic distortion, more flexibility, adaptability and robustness to the system. Moreover, the proposed control scheme improves the performance and improves the transient of active filter. The validation of the proposed technique was verified initially by a simulation program implemented in C++ language and then experimental results were obtained using a prototype three-phase active filter of 1 kVA

Contribuições ao método de rastreamento de máxima potência para sistemas fotovoltaicos

The scarcity of natural resources and the search for alternative energy sources promote a rapid change in the energy world. Among the renewable energy sources, solar energy is the most promising, presenting technology of greatest growth rate nowadays. Researchers around the world are seeking ways to facilitate their progress, developing technologies with higher efficiency and lower cost. As a contribution to global progress, this master thesis proposes the development of a strategy of maximum power tracking based on perturbation and observation method for photovoltaic systems. The proposed control strategy is based on active power balance of the system, with a reduced number of sensors. It also allows the PV system to act as a regulator of the power quality at the point of commom coupling (PCC), compensating the harmonic distortion and power factor of the current netw

Projeto em FPGA de um controlador unificado para correção de fator de potência em retificadores boost bidirecionais monofásicos

The use of Field Programmable Gate Array (FPGA) for development of digital control strategies for power electronics applications has aroused a growing interest of many researchers. This interest is due to the great advantages offered by FPGA, which include: lower design effort, high performance and highly flexible prototyping. This work proposes the development and implementation of an unified one-cycle controller for boost CFP rectifier based on FPGA. This controller can be applied to a total of twelve converters, six inverters and six rectifiers defined by four single phase VSI topologies and three voltage modulation types. The topologies considered in this work are: full-bridge, interleaved full-bridge, half-bridge and interleaved half-bridge. While modulations are classified in bipolar voltage modulation (BVM), unipolar voltage modulation (UVM) and clamped voltage modulation (CVM). The proposed project is developed and prototyped using tools Matlab/Simulink® together with the DSP Builder library provided by Altera®. The proposed controller was validated with simulation and experimental results

A novel voltage step-down/up ZCS-PWM Zeta converter

This paper presents an analysis of a novel pulse-width-modulated (PWM) voltage step-down/up Zeta converter, featuring zero-current-switching (ZCS) at the active switches. The applications in de to de and ac to de (rectifier) operation modes are used as examples to illustrate the performance of this new ZCS-PWM Zeta converter. Regarding to the new ZCS-PWM Zeta rectifier proposed, it should be noticed that the average-current mode control is used in order to obtain a structure with high power-factor (HPF) and low total harmonic distortion (THD) at the input current.Two active switches (main and auxiliary transistors), two diodes, two small resonant inductors and one small resonant capacitor compose the novel ZCS-PWM soft-commutation cell, used in these new ZCS-PWM Zeta converters. In this cell, the turn-on of the active switches occurs in zero-current (ZC) and their turn-off in zero-current and zero-voltage (ZCZV). For the diodes, their turn-on process occurs in zero-voltage (ZV) and their reverse-recovery effects over the active switches are negligible. These characteristics make this cell suitable for Insulated-Gate Bipolar Transistors (IGBTs) applications.The main advantages of these new Zeta converters, generated from the new soft-commutation cell proposed, are possibility of obtaining isolation (through their accumulation inductors), and high efficiency, at wide load range. In addition, for the rectifier application, a high power factor and low THD in the input current ran be obtained, in agreement with LEC 1000-3-2 standards.The principle of operation, the theoretical analysis and a design example for the new de to de Zeta converter operating in voltage step-down mode are presented. Experimental results are obtained from a test unit with 500W output power, 110V(dc) output voltage, 220V(dc) input voltage, operating at 50kHz switching frequency. The efficiency measured at rated toad is equal to 97.3%for this new Zeta converter.Finally, the new Zeta rectifier is analyzed, and experimental results from a test unit rated at 500W output power, 110V(dc) output voltage, 220V(rms) input voltage, and operating at 50kHz switching frequency, are presented. The measured efficiency is equal to 96.95%, the power-factor is equal to 0.98, and the input current THD is equal to 19.07%, for this new rectifier operating at rated load.

Novel zero-current-switching PWM converters

This paper presents a new family of pulsewidth-modulated (PWM) converters, featuring soft commutation of the semiconductors at zero current (ZC) in the transistors and zero voltage (ZV) in the rectifiers, Besides operating at constant frequency and with reduced commutation losses, these new converters have output characteristics similar to the hard-switching-PWM counterpart, which means that there is no circulating reactive energy that would cause large conduction losses, the new family of zero-current-switching (ZCS)-PWM converters is suitable for high-power applications using insulated gate bipolar transistors (IGBT's). The advantages of the new ZCS-PWM boast converter employing IGBT's, rated at 1.6 kW and operating at 20 kHz, are presented, This new ZCS operation can reduce the average total power dissipation in the semiconductors practically by half, when compared with the hard-switching method, This new ZCS-PWM boost converter is suitable for high-power applications using Ie;BT's in power-factor correction, the principle of operation, theoretical analysis, and experimental results of the new ZCS-PWM boost converter are provided in this paper to verify the performance of this new family of converters.