PHOTOLUMINESCENCE OF ORDERED GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Optical properties of ordered Ga0.5In0.5P epitaxial layers grown by metalorganic vapor phase epitaxy are investigated by photoluminescence (PL) in a temperature range of 10-200 K using excitation power densities between 0.35 W/cm(2) and 20 W/cm(2). It is found that the intensity of the highest-energy PL peak of the ordered Ga0.5In0.5P epilayer decreases first, then increases and finally goes down again with increasing temperature. A model of ordered Ga0.5In0.5P epitaxial layers is proposed, in which the ordered Ga0.5In0.5P epilayer is regarded as a type-II quantum well structure with band-tail states, and the dependence of PL spectra on the temperature and excitation intensity is reasonably explained. (C) 1995 American Institute of Physics.

Growth of Space Ordered on GaAs（100） Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD

Space ordered 1.3μm self-assembled InAs QDs are grown on GaAs（100） vicinal substrates by MOCVD. Photoluminescence measurements show that the dots on vicinal substrates have a much higher PL intensity and a narrower FWHM than those of dots on exact substrates, which indicates better material quality. To obtain 1.3μm emissions of InAs QDs, the role of the so called InGaAs strain cap layer （SCL） and the strain buffer layer （SBL） in the strain relaxation process in quantum dots is studied. While the use of SBL results only in a small change of emission wavelength,SCL can extend the QD＇s emission over 1.3μm due to the effective strain reducing effect of SCL.

Formation trends of ordered self-assembled nanoislands on stepped substrates

The growth of ordered self-assembled nanoislands on stepped substrates is studied systematically by kinetic Monte Carlo simulations. As the terrace width is small, the formation of nanoislands is confined in the steps and nanoislands ordered in lines or nanowires can be obtained. The Schwoebel barrier at the step edges has a great influence on the evolution of both the size and space distributions of the islands. When the terrace width is relatively large, self-ordering of nanoislands in the center regions of the terraces happens. An unexpected trend of the nanoisland self-ordering is found as the deposition thickness is larger than 0.2 ML, which can be related to the attractive migrations between nearby islands.

FACE对农田土壤微生物及VA菌根的影响

大气CO_2浓度升高对整个陆地生态系统产生巨大影响。微生物是土壤中重要而又活跃的组成部分，是自然界物质循环不可缺少的成员，行使着许多对陆地生命至关重要的功能。因此，了解土壤中微生物的变化，是了解整个陆地生态系统对大气CO_2浓度升高响应的关键。木文利用在江苏省无锡市建立的稻一麦轮作FACE系统研究平台，研究了CO_2浓度升高对农田土壤微生物及VA菌根的影响。结果发现在FACE条件下，土壤细菌、真菌和放线菌的数量都随着小麦和水稻的生长而发生变化，分别在小麦返青期和水稻拔节期偏大，随后均有所下降，与对照相比，CO_2浓度升高增加土壤细菌、真菌和放线菌的数量；小麦根区土壤中议菌根真菌的抱子以球囊霉属（Glomus）为优势属，以摩西球囊霉（Glomus mosseae）为优势种；在小麦拔节期和孕穗期观察到VA菌根真菌侵染，侵染率在拔节期偏高，后逐渐降低，CO_2浓度升高使小麦VA菌根侵染率增加，而在水稻根系没有观察到VA菌根真菌侵染；根系活力分别在小麦拔节期和水稻抽穗期偏高，到成熟期均降低，CO_2浓度升高使根系活力增强；小麦VA菌根侵染率与根系活力存在正相关关系。总之，大气CO_2浓度升高对农田土壤细菌、真菌和放线菌的数量、VA菌根侵染率及根系活力都表现出一定的促进作用。