Piezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Erbium- and ytterbium-doped sol-gel SiO2-HfO2 crack-free thick films onto silica on silicon substrate

Aware of the difficulties in applying sol-gel technology on the preparation of thin films suitable for optical devices, the present paper reports on the preparation of crack-free erbium- and ytterbium-doped silica: hafnia thick films onto silica on silicon. The film was obtained using a dispersion of silica-hafnia nanoparticles into a binder solution, spin-coating, regular thermal process and rapid thermal process. The used methodology has allowed a significant increase of the film thickness. Based on the presented results good optical-quality films with the required thickness for a fiber matching single mode waveguide were obtained using the erbium- and ytterbium-activated sol-gel silica:hafnia system. The prepared film supports two transversal electric modes at 1550 nm and the difference between the transversal electric mode and the transversal magnetic mode is very small, indicating low birefringence. Photoluminescence of the I-4(13/2) -> I-4(15/2) transition of erbium ions shows a broad band centered at 1.53 mu m with full width at a half maximum of 28 nm. Up-conversion emission was carried out under different pump laser powers, and just one transition at red region was observed. (c) 2006 Elsevier B.V. All rights reserved.

Magnetic field release of trapped charges in poly(fluorenylenevinylene)s

We have measured the effect of an applied magnetic field on the current through thin films of two different organic conjugated polymers that have previously shown to exhibit magnetoresistance, poly(9,9-dioctyl-1,4-fluorenylenevinylene) and poly(9,9-dioctyl-2,7-fluorenylenevinylene). The results show that the magnetic field releases trapped charges from inside the material and enhances the current. We have also performed optical absorption experiments on these polymer films under applied voltage and magnetic field. The results show that the magnetic field produces a change in the optical absorption in the low-energy range associated with deep traps and only under conditions when these traps are likely charged. These two results provide a strong case for the release of trapped charges caused by the magnetic field as being the cause of the magneto resistance in these polymers and possibly in other organic materials where magnetoresistance was recently observed. (c) 2007 Elsevier B.V. All rights reserved.

Nanocrystalline Ga1-xMnxN films grown by reactive sputtering

The growth of nanocrystalline Ga1-zMnxN (0.00 <= x <= 0.18) films grown by reactive RF-magnetron sputtering is focused here for the first time. The films were grown in a N-2 atmosphere by co-sputtering technique using a Ga target covered with small pieces of Mn onto c-GaAs (10 0), c-Si (10 0) and amorphous SiO2 substrates maintained at 500 K. Scanning electron microscopy and X-ray diffraction (XRD) experiments did not show any evidence for Mn segregation within the studied composition range. EDX measurements show that the Mn concentration is increased monotonically with the fraction of the target area covered by Mn. The XRD characterization show that the films are nanocrystalline, the crystallites having mean grain sizes in the 15-19 nm range and wurtzite structure with preferential growth orientation along the c-axis direction. The lattice parameters of alpha-GaN (a and c) increase practically linearly with the increase of Mn incorporation. The changes in the structural properties of our films due to the Mn incorporation are similar to those that occur in ferromagnetic GaMnN single-crystal films. (c) 2006 Elsevier B.V. All rights reserved.

Magnetic field dependent magnetization of a conducting plasticized poly(aniline) film

We report magnetic data of free standing films of poly( aniline) (PANI) protonated with a plasticizing di-ester of succinic acid. The data have been obtained using the electron spin resonance (ESR) technique at two different frequencies, X-band (9.4 GHz) and Q-band ( 34 GHz), on one hand, and by magnetization measurements in broad ranges of temperatures and magnetic fields on the other hand. All the data can be explained assuming a transition as a function of temperature from delocalized magnetic moments in the valence band to localized positive polarons in several antiferromagnetically correlated bands. By increasing the magnetic field, the magnetic properties are affected in several ways. An intra-band admixture of states occurs; it contributes to increase the spins' localization and finally promotes an antiferromagnetic-metamagnetic transition.

Superparamagnetic Ni:SiO2-C nanocomposites films synthesized by a polymeric precursor method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structure, ferroelectric/magnetoelectric properties and leakage current density of (Bi0.85Nd0.15)FeO3 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electronic Perspective on the Electrochemistry of Prussian Blue Films

The derivative of the voltabsommetric scans, together with previous nano-electrogravimetric and X-ray diffraction results, allow different electrochemical processes to be distinguished during the Prussian blue (PB) voltammetric scan. Potassium, proton, and hydrated proton counterions involved in PB electrochemistry are related here to the electrochemical reactions of specific Fe sites. Potassium counterions show two different sites for their insertion: one located in the crystalline framework and another in ferrocyanide vacancies. From the monitoring of electroactive Fe sites, the covalent-exchange model is suggested as one of the first approaches to explain the origin of the PB magnetic ordering observed at room temperature during voltammetric scanning.

Magnetoelectric coefficient in strontium ruthenate buffered lanthanum modified bismuth ferrite thin films grown by chemical method

This paper focuses on the magnetoelectric coupling (ME) at room temperature in lanthanum modified bismuth ferrite thin film (BLFO) deposited on SrRuO 3-buffered Pt/TiO 2/SiO 2/Si(100) substrates by the soft chemical method. BLFO film was coherently grown at a temperature of 500 °C. The magnetoelectric coefficient measurement was performed to evidence magnetoelectric coupling behavior. Room temperature magnetic coercive field indicates that the film is magnetically soft. The maximum magnetoelectric coefficient in the longitudinal direction was close to 12 V/cmOe. Dielectric permittivity and dielectric loss demonstrated only slight dispersion with frequency due the less two-dimensional stress in the plane of the film. Polarization reversal was investigated by applying dc voltage through a conductive tip during the area scanning. We observed that various types of domain behavior such as 71 ° and 180° domain switching, and pinned domain formation occurred. Copyright © 2009 American Scientific Publishers All rights reserved.

Morphology of flux avalanches in patterned superconducting films

It is well known that under certain circumstances, magnetic fields applied perpendicularly to the plane of superconducting films can trigger flux avalanches. In such cases, the penetration has a tree-like profile. However, in samples where a regular array of antidots, ADs, is present, the avalanches follow the rows of ADs as if they were guiding lines for the abrupt penetration. In this work, we used the magnetooptical imaging technique to study the morphology of flux avalanches in two Nb films with a square lattice of square ADs, each one with a different lateral size, and a plain film for reference. We show that the morphology of the flux avalanches is greatly influenced by the size of the interstitial region. © 2012 Springer Science+Business Media, LLC.

Evidence of magnetoelectric coupling on calcium doped bismuth ferrite thin films grown by chemical solution deposition

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Electrical behavior of Bi0.95Nd0.05FeO3 thin films grown by the soft chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural, morphological and magnetic characterization of electrodeposited Co-Fe-W alloys

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1-xMnxAs films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)