Investigating carbon materials for use as the electron emission source in a parallel electron-beam lithography system

A microelectronic parallel electron-beam lithography system using an array of field emitting microguns is currently being developed. This paper investigates the suitability of various carbon based materials for the electron source in this device, namely tetrahedrally bonded amorphous carbon (ta-C), nanoclustered carbon and carbon nanotubes. Ta-C was most easily integrated into a gated field emitter structure and various methods, such as plasma and heavy ion irradiation, were used to induce emission sites in the ta-C. However, the creation of such emission sites at desired locations appeared to be difficult/random in nature and thus the material was unsuitable for this application. In contrast, nanoclustered carbon material readily field emits with a high site density but the by-products from the deposition process create integration issues when using the material in a microelectronic gated structure. Carbon nanotubes are currently the most promising candidate for use as the emission source. We have developed a high yield and clean (amorphous carbon by-product free) PECVD process to deposit single free standing nanotubes at desired locations with exceptional uniformity in terms of nanotube height and diameter. Field emission from an array of nanotubes was also obtained. © 2001 Elsevier Science B.V.

Evidence of ultrafast energy exchange-induced soft'mode of phonons and lattice instability: a nanotime effect

With a series of supportive experimental phenomena as induced by ion beam bombardment, energetic beaminduced athermal activation process in Si is demonstrated. This is correlated with phenomena induced by ultrafast energy exchange in condensed matter in general. A critical modelling is presented on the above process and a universal concept: the ultrafast energy exchange-induced soft mode of phonons and the lattice instability in condensed matter are proposed.

快重离子辐照引起Ni/SiO2界面原子混合及相变研究

Ni/SiO2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×1012,5×1012 Xe/cm2 and 853 MeV Pb ions to 5×1011 Pb/cm2,respectively.These samples were analyzed using Rutherford Backscattering Spectrometry(RBS) and X-ray diffraction spectroscopy(XRD),from which the intermixing and phase change were investigated.The obtained results show that both Xe-and Pb-ions could induce diffusion of Ni atoms to SiO2 substrates and result in intermixing of Ni with SiO2.Furthermore,1.0×1012 Xe/cm2 irradiat...中文摘要：在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/SiO2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和NiO相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。

一种低活化铁素体/ 马氏体钢的高能重离子辐照效应研究

Low-activation Ferritic/Martensitic steels are a kind of important structural materials candidate to the application in advanced nuclear energy systems.Possible degradation of properties and even failure in the condition of high-temperature and high helium production due to energetic neutron irradiation in a fusion reactor is a major concern with the application of this kind of materials.In the present work microstructural evolution in a 9Cr Ferritic/Martensitic steel(T92B) irradiated with 122 MeV 20Ne ions...中文摘要：低活化的铁素体/马氏体钢是先进核能装置(如聚变堆)的重要候选结构材料。在聚变堆实际工作环境下,由于高温和高氦产生率引起的材料失效是这类材料面临的一个重要问题。本项研究以兰州重离子加速器(HIRFL)提供的中能惰性气体离子束(20Ne,122 MeV)作为模拟辐照条件,借助透射电子显微镜,研究了一种低活化的9Cr铁素体/马氏体钢(T92B)组织结构的变化和辐照肿胀。实验结果表明,高温下当材料中晶格原子的撞出损伤和惰性气体原子沉积浓度超过一定限值时,材料内部形成高浓度的空洞,并且空洞肿胀率显著依赖于辐照温度和剂量;在马氏体板条界面及其它晶界处空洞趋于优先形成,并且在晶界交汇处呈加速生长。基于氦泡的形核生长与空洞肿胀的经典模型探讨了在不同辐照条件(He离子、Ne离子、Fe/He离子双束、快中子、Ni离子)下铁素体/马氏体钢中肿胀率数据的关联。

potential mechanisms involved in resistant phenotype of MCF-7breast carcinoma cells to ionizing radiation induced apoptosis

In the present study, we investigated the mechanisms of apoptosis resistance and the roles of the phosphorylation of BRCA1, p21, the Bax/Bcl-2 protein ratio and cell cycle arrest in IR-induced apoptosis in MCF-7 cells. X-irradiation, in particular at low dose (1 Gy), but not carbon ion irradiation, had a significant antiproliferative effect on the growth of MCF-7 cells. 1 Gy X-irradiation resulted in G1 and G2 phase arrest, but 4 Gy induced a significant G1 block. In contrast, carbon ion irradiation resulted in a significant accumulation in the G2 phase. Concomitant with the phosphorylation of H2AX induced by DNA damage,carbon ion irradiation resulted in an approximately 1.9–2.8-fold increase in the phosphorylation of BRCA1 on serine residue 1524, significantly greater than that detected for X-irradiation. Carbon ion irradiation caused a dramatic increase in p21 expression and drastic decrease in Bax expression compared with X-irradiation. The data implicated that phosphorylation of BRCA1 on serine residue 1524 might,at least partially, induce p21 expression but repress Bax expression. Together, our results suggested that the phosphorylation of BRCA1 at Ser-1524 might contribute to the G2 phase arrest and might be an upstream signal involved in preventing apoptosis signal via upregulation of p21 and downregulation of the Bax/Bcl-2 ratio.

重离子诱导人舌鳞癌细胞凋亡和Bax/Bcl-2蛋白表达的变化

In order to investigate the effect of carbon ion irradiation on apoptosis and Bax/Bcl-2 expression inhuman tongue carcinoma cells, exponentially growing human tongue carcinoma cells (Tb) cultured in vitro were irradiated with 0, 0.5, 1.0, 2.0 or 4.0 Gy of 12C6+ ions respectively. Survival rate of irradiated cells at various doses were measured by MTT assay. The nucleus changes of apoptosis and necrosis of cells stained by Hochest/PI were observed through fluorescence microscope. The cell cycle changes were detected by flow cytometry (FCM). The expressions of Bax and Bcl-2 were detected by Western blot analysis. The results show that the viability of Tb cells decreases gradually with increment of irradiation doses of carbon ions. The proportions of apoptosis cells in the irradiated groups are significantly higher than those in the control group. There is a positive correlation between irradiation doses and retardation strength in G2 /M phase at 24 h after irradiation (P<0.05). And the expressions of Bax and bcl-2 are significantly up-regulated and down-regulated respectively by 12C6+ ion irradiation. It can be concluded from above that cell apoptosis induced by heavy ion with high-LET may be mediated through the Bax/Bcl-2 expression pathway. 探讨重离子辐照对人舌鳞癌Tb细胞的凋亡及Bax/Bcl-2蛋白表达的影响。采用0、0.5、1.0、2.0、4.0 Gy重离子束辐照人舌鳞癌 Tb 细胞，应用 MTT 法检测细胞存活，流式细胞技术检测细胞周期变化，Hoechst33258/PI 复染法观察 Tb 细胞凋亡形态，并采用 Western-blot 法检测 Bax/Bcl-2 蛋白表达情况。结果发现，Tb细胞经12C6+离子束辐照后存活率显著下降，呈剂量依赖性的生长抑制；Tb细胞呈现蓝色荧光浓集成团的凋亡形态，且凋亡比例随辐照剂量增加；G2/M 期细胞百分数随照射剂量增加而增加（P＜0.05） 。Western-blot结果显示 Bax 蛋白表达水平随辐照剂量逐渐上升，但在 4 Gy 组其表达不再增高，Bcl-2 蛋白在 1.0、2.0、4.0 Gy组随剂量增大呈下降趋势。以上结果提示重离子束辐照对 Tb 细胞有抑制作用，Bax/Bcl-2 蛋白表达是重离子治癌的机制之一。

重离子辐照SiO_2 的光致发光(英文)

基于荷能离子与固体相互作用特点 ,提出了一种新的制备光致发光材料的方法——高能重离子辐照 .用这种方法研究了 Si O2 薄膜的光致发光特性 ,发现高能 84 Kr和 4 0 Ar离子辐照可在注碳Si O2 薄膜样品中产生强的蓝 -紫光发射带 ,掺杂碳增强了辐照样品的发光特性