Field emission from tetrahedrally bonded amorphous carbon

The field emission behaviour of a series of Tetrahedrally Bonded Amorphous Carbon (ta-C) films has been measured. The films were produced using a Filtered Cathodic Vacuum Arc System. The threshold field for emission and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical as-grown undoped ta-C films have a threshold field of order 10-15 V/μm and optimally nitrogen-doped films exhibit fields as low as 5 V/μm. The emission as a function of back contact and front surface condition has also been considered and shows that the back contact has only a minor effect on emission efficiency. However, after etching in either an oxygen or hydrogen plasma, the films show a marked reduction in threshold field, down to as low as 2-3 V/μm, and a marked improvement in emission site density.

Tetrahedrally bonded amorphous carbon for field-emission displays

Field emission from a series of tetrahedrally bonded amorphous-carbon (ta-C) films, deposited in a filtered cathodic vacuum arc, has been measured. The threshold field for emission and current densities achievable have been investigated as a function of sp3/sp2 bonding ratio and nitrogen content. Typical as-grown undoped ta-C films have threshold fields of the order 10-15 V/μm and optimally nitrogen doped films exhibited fields as low as 5 V/μm. In order to gain further understanding of the mechanism of field emission, the films were also subjected to H2, Ar, and O2 plasma treatments and were also deposited onto substrates of different work function. The threshold field, emission current, emission site densities were all significantly improved by the plasma treatment, but little dependence of these properties on work function of the substrate was observed. This suggests that the main barrier to emission in these films is at the front surface.

Precracked reinforced concrete T-Beams repaired in shear with bonded carbon Fiber-Reinforced Polymer sheets

This study investigates the structural behavior of precracked reinforced concrete (RC) T-beams strengthened in shear with externally bonded carbon fiber-reinforced polymer (CFRP) sheets. It reports on seven tests on unstrengthened and strengthened RC T-beams, identifying the influence of load history, beam depth, and percentage of longitudinal steel reinforcement on the structural behavior. The experimental results indicate that the contributions of the external CFRP sheets to the shear force capacity can be significant and depend on most of the investigated variables. This study also investigates the accuracy of the prediction of the fiber-reinforced polymer (FRP) contribution in ACI 440.2R-08, UK Concrete Society TR55, and fib Bulletin 14 design guidelines for shear strengthening. A comparison of predicted values with experimental results indicates that the guidelines can overestimate the shear contribution of the externally bonded FRP system. © 2012, American Concrete Institute.

Shear transfer across a diagonal crack in reinforced concrete strengthened with externally bonded FRP fabric

Aging concrete infrastructure in developed economies and more recently constructed concrete infrastructure in the developing world are frequently found to be deficient in structural strength relative to current needs. This can be attributed to a variety of factors including deterioration, construction defects, accidental damage, changes in understanding and failure to design for future loading requirements. Strengthening existing concrete structures can be a cost and carbon effective alternative to replacement. A competitive option for the strengthening of concrete slab-on-beam structures that are deficient in shear capacity is the U-wrapping of the down-stand beam portion of the shear span with externally bonded FRP fabric. While guidance exists for the strengthening of reinforced concrete by U-wrapping, the interaction between internal steel reinforcement, concrete and external FRP in the presence of a dominant diagonal shear crack is not well understood. An approach adopted in previous work has been to explore this interaction through conventional push-off testing. In conventional push-off testing, unlike in a beam, the shear plane is parallel to the direction of loading and perpendicular to the principal fibre orientation. This paper presents a novel push-off test variation in which the shear plane is inclined at 45° to the direction of loading and the principal fibre orientation. A variety of reinforcement ratios, FRP thicknesses and FRP end conditions are modelled. The implications of inclined cracking on debonding of FRP are investigated. The suitability and relevance of inclined push-off tests for further work in this area is also assessed. © 2013, NetComposite Limited.

Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction

Wafer bonding between p-Si and an n-InP-based InGaAsP multiple quantum well (MQW) wafer was achieved by a direct wafer bonding method. In order to investigate the strain at different annealing temperatures, four pre-bonded pairs were selected, and pair one was annealed at 150 degrees C, pair two at 250 degrees C, pair three at 350 degrees C, and pair four at 450 degrees C, respectively. The macroscopical strains on the bonded epitaxial layer include two parts, namely the internal strain and the strain caused by the mismatching of the crystalline orientation between InP (100) and Si (100). These strains were measured by the X-ray double crystalline diffraction, and theoretical calculations of the longitudinal and perpendicular thermal strains at different annealing temperatures were calculated using the bi-metal thermostats model, both the internal strain and the thermal strain increase with the annealing temperature. Normal thermal stress and the elastic biaxial thermal strain energy were also calculated using this model. (c) 2006 Elsevier B.V. All rights reserved.

Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100)

An n-InP-based InGaAsP multiple-quantum-well wafer was bonded with p-Si by chemical surface activated bonding at 70 degrees C, and then annealed at 450 degrees C. Different thermal expansion coefficients between InP and Si will induce thermal stresses in the bonded wafer. Planar and cross-sectional distributions of thermal stress in the bonded InP-Si pairs were analyzed by a two-dimensional finite element method. In addition, the normal, peeling, and shear stresses were calculated by an analytic method. Furthermore, x-ray double crystalline diffraction was applied to measure the thermal strain and the strain caused by the mismatching of the crystalline orientation between InP (100) and Si (100). The wavelength redshift of the photoluminescence (PL) spectrum due to thermal strain was investigated via the calculation of the band structure, which is in agreement with the measured PL spectra.