Tailoring the Cu(In, Al)S-2 nanostructures for photonic applications

Solvent dependent and low temperature based Chalcopyrite CuIn1-xAlxS2 (CIAS) nano structures were synthesized by a simple one-pot solvothermal route. X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy and micro-Raman spectroscopy were used to characterize the nanostructures structurally and optically. CIAS hollow spheres were constructed from the nanoplates. Detailed formation mechanism of the hollow spheres was explained. Tentative optical phonon vibrational modes have been discussed. Steady state room temperature IR photodectection have been demonstrated with all the CIAS nanostructures under IR lamp illumination. Photo current was amplified by two orders and one order in case of nano needle like structures and hollow spheres respectively, which was explained based upon the trap assisted space charge. Growth and decay constants lasted for few milli seconds.

Frequency and Temperature-Independent Electrical Transport Properties of 2BaO-0.5Na(2)O-2.5Nb(2)O(5)-4.5B(2)O(3) Glass-Ceramics

The temperature (300-973K) and frequency (100Hz-10MHz) response of the dielectric and impedance characteristics of 2BaO-0.5Na(2)O-2.5Nb(2)O(5)-4.5B(2)O(3) glasses and glass nanocrystal composites were studied. The dielectric constant of the glass was found to be almost independent of frequency (100Hz-10MHz) and temperature (300-600K). The temperature coefficient of dielectric constant was 8 +/- 3ppm/K in the 300-600K temperature range. The relaxation and conduction phenomena were rationalized using modulus formalism and universal AC conductivity exponential power law, respectively. The observed relaxation behavior was found to be thermally activated. The complex impedance data were fitted using the least square method. Dispersion of Barium Sodium Niobate (BNN) phase at nanoscale in a glass matrix resulted in the formation of space charge around crystal-glass interface, leading to a high value of effective dielectric constant especially for the samples heat-treated at higher temperatures. The fabricated glass nanocrystal composites exhibited P versus E hysteresis loops at room temperature and the remnant polarization (P-r) increased with the increase in crystallite size.

Nanocomposite Based Organic-Inorganic Cu3BiS3 High Sensitive Hybrid Photonic Devices

We report the synthesis and application Cu3BiS3 nanorods in infrared photodectection. Cu3BiS3 nano rods were characterized structurally, optically and electrically. The detailed IR photodectection properties in terms of photo response were demonstrated with IA lamp and 1064 nm laser illuminations. The rapid photocurrent time constants followed by the slower components, resulting due to the defect states. The photo detecting properties for different concentrations of nanorods blended with the conjugate polymer devices were demonstrated. Further the photocurrent was enhanced to threefold increase from 3.47 x 10(-7) A to 2.37 x 10(-3) A at 1 V for 10 mg nanorods embedded in the polymer device. Responsivity of hybrid device was enhanced from 0.0158 NW to 102 NW. The detailed trap assisted space charge transport properties were studied considering the different regimes. Hence Cu3BiS3 can be a promising candidate in the nano switchable near IA photodetectors.

Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phase InGaN was found to be similar to 2.48 eV: The current-voltage (I-V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log-log plot of the I-V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film. (C) 2014 Elsevier Ltd. All rights reserved.

Cadmium Sulfide Nanocrystal Sensitized Vertically Aligned Titanium Dioxide Rods for Large Area Image Sensors on 3-D Substrates

We discuss here a semiconductors assembly comprising of titanium dioxide (TiO2) rods sensitized by cadmium sulfide (CdS) nanocrystals for potential applications in large area electronics on three dimensional (3-D) substrates. Vertically aligned TiO2 rods are grown on a substrate using a 150 degrees C process flow and then sensitized with CdS by SILAR method at room temperature. This structure forms an effective photoconductor as the photo-generated electrons are rapidly removed from the CdS via the TiO2 thereby permitting a hole rich CdS. Current-voltage characteristics are measured and models illustrate space charge limited photo-current as the mechanism of charge transport at moderate voltage bias. The stable assembly and high speed are achieved. The frequency response with a loading of 10 pF and 9 M Omega shows a half power frequency of 100 Hz. (C) 2015 The Electrochemical Society. All rights reserved.

Fracture of materials undergoing solid-solid phase transformation

A large number of technologically important materials undergo solid-solid phase transformations. Examples range from ferroelectrics (transducers and memory devices), zirconia (Thermal Barrier Coatings) to nickel superalloys and (lithium) iron phosphate (Li-ion batteries). These transformations involve a change in the crystal structure either through diffusion of species or local rearrangement of atoms. This change of crystal structure leads to a macroscopic change of shape or volume or both and results in internal stresses during the transformation. In certain situations this stress field gives rise to cracks (tin, iron phosphate etc.) which continue to propagate as the transformation front traverses the material. In other materials the transformation modifies the stress field around cracks and effects crack growth behavior (zirconia, ferroelectrics). These observations serve as our motivation to study cracks in solids undergoing phase transformations. Understanding these effects will help in improving the mechanical reliability of the devices employing these materials.

In this thesis we present work on two problems concerning the interplay between cracks and phase transformations. First, we consider the directional growth of a set of parallel edge cracks due to a solid-solid transformation. We conclude from our analysis that phase transformations can lead to formation of parallel edge cracks when the transformation strain satisfies certain conditions and the resulting cracks grow all the way till their tips cross over the phase boundary. Moreover the cracks continue to grow as the phase boundary traverses into the interior of the body at a uniform spacing without any instabilities. There exists an optimal value for the spacing between the cracks. We ascertain these conclusion by performing numerical simulations using finite elements.

Second, we model the effect of the semiconducting nature and dopants on cracks in ferroelectric perovskite materials, particularly barium titanate. Traditional approaches to model fracture in these materials have treated them as insulators. In reality, they are wide bandgap semiconductors with oxygen vacancies and trace impurities acting as dopants. We incorporate the space charge arising due the semiconducting effect and dopant ionization in a phase field model for the ferroelectric. We derive the governing equations by invoking the dissipation inequality over a ferroelectric domain containing a crack. This approach also yields the driving force acting on the crack. Our phase field simulations of polarization domain evolution around a crack show the accumulation of electronic charge on the crack surface making it more permeable than was previously believed so, as seen in recent experiments. We also discuss the effect the space charge has on domain formation and the crack driving force.

Influence of target thickness on the generation of high-density ion bunches by ultrashort circularly polarized laser pulses

Ion acceleration by ultrashort circularly polarized laser pulse in a solid-density target is investigated using two-dimensional particle-in-cell simulation. The ions are accelerated and compressed by the continuously extending space-charge field created by the evacuation and compression of the target electrons by the laser light pressure. For a sufficiently thin target, the accelerated and compressed ions can reach and exit from the rear surface as a high-density high-energy ion bunch. The peak ion energy depends on the target thickness and reaches maximum when the compressed ion layer can just reach the rear target surface. The compressed ion layer exhibits lateral striation which can be suppressed by using a sharp-rising laser pulse. (c) 2008 American Institute of Physics.

Laser-driven inertial ion focusing

A Hohlraum-like configuration is proposed for realizing a simple compact source for neutrons. A laser pulse enters a tiny thin-shelled hollow-sphere target through a small opening and is self-consistently trapped in the cavity. The electrons in the inner shell-wall region are expelled by the light pressure. The resulting space-charge field compresses the local ions into a thin layer that becomes strongly heated. An inward expansion of ions into the shell cavity then occurs, resulting in the formation at the cavity center of a hot spot of ions at high density and temperature, similar to that in inertial electrostatic confinement.

Conduction through thin titanium dioxide films

Conduction through TiO₂ films of thickness 100 to 450 Å have been investigated. The samples were prepared by either anodization of Ti evaporation of TiO₂, with Au or Al evaporated for contacts. The anodized samples exhibited considerable hysteresis due to electrical forming, however it was possible to avoid this problem with the evaporated samples from which complete sets of experimental results were obtained and used in the analysis. Electrical measurements included: the dependence of current and capacitance on dc voltage and temperature; the dependence of capacitance and conductance on frequency and temperature; and transient measurements of current and capacitance. A thick (3000 Å) evaporated TiO₂ film was used for measuring the dielectric constant (27.5) and the optical dispersion, the latter being similar to that for rutile. An electron transmission diffraction pattern of a evaporated film indicated an essentially amorphous structure with a short range order that could be related to rutile. Photoresponse measurements indicated the same band gap of about 3 ev for anodized and evaporated films and reduced rutile crystals and gave the barrier energies at the contacts.

The results are interpreted in a self consistent manner by considering the effect of a large impurity concentration in the films and a correspondingly large ionic space charge. The resulting potential profile in the oxide film leads to a thermally assisted tunneling process between the contacts and the interior of the oxide. A general relation is derived for the steady state current through structures of this kind. This in turn is expressed quantitatively for each of two possible limiting types of impurity distributions, where one type gives barriers of an exponential shape and leads to quantitative predictions in c lose agreement with the experimental results. For films somewhat greater than 100 Å, the theory is formulated essentially in terms of only the independently measured barrier energies and a characteristic parameter of the oxide that depends primarily on the maximum impurity concentration at the contacts. A single value of this parameter gives consistent agreement with the experimentally observed dependence of both current and capacitance on dc voltage and temperature, with the maximum impurity concentration found to be approximately the saturation concentration quoted for rutile. This explains the relative insensitivity of the electrical properties of the films on the exact conditions of formation.

双掺杂LiNbO3晶体中光栅均匀性的优化研究

研究了非挥发全息记录中南于紫外光的强吸收而引起的光栅非均匀性，分析了这种非均匀性对光栅衍射效率的影响。结果显示，非均匀性致使光折变光栅的平均强度减弱，衍射效率降低。提出了采用两束等光强的敏化紫外光由晶体两侧入射的优化方案以改善光栅的均匀性，提高光栅的衍射效率。通过联立两中心带输运物质方程和双光束耦合波方程，进行了相应的理论模拟，并给出实验验证。结果表明双侧紫外光照射能够实现均匀性较好的光栅，是提高衍射效率的有效途径之一。

Ce：Mn：LiNbO3晶体紫外记录研究

采用紫外光作记录光在Ce：Mn：LiNbO3晶体中实现非挥发全息记录，灵敏度可达0．0803cm／J，衍射效率（固定）为5．07％，比采用红光为记录光，紫外光为敏化光的非挥发双中心记录方案均提高了50多倍。分析表明，采用紫外光作为记录光，深能级电子被激发比例极大提高，参与光折变过程的电子平均运动周期变短．提高了衍射效率和灵敏度；深浅能级电子光栅的同相位，使得固定空间电荷场变强。文中还研究了退火对记录性能的影响。

(Ce,Cu)∶LiNbO3晶体非挥发全息记录理论研究与优化

根据双中心带输运模型,对(Ce,Cu)∶LiNbO3晶体双中心非挥发全息记录进行了理论研究与优化。推导了(Ce,Cu)∶LiNbO3晶体的微观参量,采用数值方法通过严格求解模拟双中心带输运方程来模拟全息记录过程。分析了记录过程中,记录与敏化光强、Ce和Cu掺杂浓度以及晶体微观参量对(Ce,Cu)∶LiNbO3晶体双中心全息记录的影响。发现(Ce,Cu)∶LiNbO3晶体非挥发全息记录中实现高衍射效率与固定效率的主导因素是深中心Cu,在记录过程中,深中心Cu建立起了很强的空间电荷场。数值模拟的结果经过实验验

Theoretical investigation of nonvolatile holographic storage in doubly doped lithium niobate crystals

We have studied theoretically the inherent mechanisms of nonvolatile holographic storage in doubly doped LiNbO3 crystals. The photochromic effect of doubly doped LiNbO3 crystals is discussed, and the criterion for this effect is obtained through the photochromism-bleach factor a = S(21)gamma(1)/S(11)gamma(2) that we define. The two-center recording and fixing processes are analytically discussed with extended Kukhtarev equations, and analytical expressions for recorded and fixed steady-state space-charge fields as well as temporal behavior during the fixing process are obtained. The effects of microphysical quantities, the macrophotochromic effect on fixing efficiency, and recorded and fixed steady-state space-charge fields, are discussed analytically and numerically. (C) 2002 Optical Society of America.

Prescription for optimizing holograms in LiNbO3 : Fe : Mn

The photorefractive holographic dynamics of grating formation in photochromic doubly doped LiNbO3:Fe:Mn crystal is studied numerically and analytically in terms of the two-center model of Kukhtarev Et al. [Ferroelectrics 22, 949 (1979)]. The relations among the recorded and fixed space-charge fields and the doping densities, the oxidation-reduction states of the fields, and the intensities of UV-sensitizing and red recording beams are studied. Important conditions and effects are feued, and an optimal prescription for material doping and oxidation-reduction processing is suggested in which the crystal can be strongly oxidized and the Mn-doping density is smaller than the Fe-doping density. (C) 2000 Optical Society of America. OCIS codes: 050.7330, 190.5330, 090.2900.

Optimizations for the uniformity of the non-volatile volume grating in doubly doped LiNbO3 crystals

The formation of the non-uniformity of the non-volatile volume grating in doubly doped LiNbO3 crystals is studied in detail. We find that the non-uniformity of the grating is mainly caused by strong ultraviolet light absorption, and the average saturation space-charge field is small and the diffraction efficiency is low as a result of the non-uniformity of the grating. In order to optimize the uniformity of the grating, we propose the recording scheme by using two sensitizing beams simultaneously from the two opposite sides of the crystals. Theoretical simulations and experimental verifications are performed. Results show that the well uniformed grating with high diffraction efficiency can be obtained by using this optimization scheme. (c) 2004 Elsevier B.V. All rights reserved.