970 resultados para Edge effect


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The flow typical of that occurring over the windward lip of an aero engine intake operating in a crosswind has been reproduced on a 2D lip. The uncontrolled boundary layer undergoes a laminar separation at the leading edge of the lip. It has been shown that a minimum size of boundary layer trip, positioned upstream of the separation location, is required to enable the flow to remain attached around the leading edge. A turbulent separation then occurs in the diffuser. Larger diameter trips promote earlier diffuser separation. Copyright © 2008 by the American Institute of Aeronautics and Astronautics, Inc.

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We investigate the effect of a perpendicular magnetic field on the single-particle charging spectrum of a graphene quantum dot embedded inline with a nanoribbon. We observe uniform shifts in the single-particle spectrum which coincide with peaks in the magnetoconductance, implicating Landau level condensation and edge state formation as the mechanism underlying magnetic field-enhanced transmission through graphene nanostructures. The experimentally determined ratio of bulk to edge states is supported by single-particle band-structure simulations, while a fourfold beating of the Coulomb blockade transmission amplitude points to many-body interaction effects during Landau level condensation of the ν=0 state. © 2012 American Physical Society.

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We report the enhancement of sub-bandgap photoluminescence from silicon via the Purcell effect. We couple the defect emission from silicon, which is believed to be due to hydrogen incorporation into the lattice, to a photonic crystal (PhC) nanocavity. We observe an up to 300-fold enhancement of the emission at room temperature at 1550 nm, as compared to an unpatterned sample, which is then comparable to the silicon band-edge emission. We discuss the possibility of enhancing this emission even further by introducing additional defects by ion implantation, or by treating the silicon PhC nanocavity with hydrogen plasma. © 2011 Elsevier B.V.

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This paper presents a new formulation for trailing edge noise radiation from rotating blades based on an analytical solution of the convective wave equation. It accounts for distributed loading and the effect of mean flow and spanwise wavenumber. A commonly used theory due to Schlinker and Amiet (1981) predicts trailing edge noise radiation from rotating blades. However, different versions of the theory exist; it is not known which version is the correct one and what the range of validity of the theory is. This paper addresses both questions by deriving Schlinker and Amiet's theory in a simple way and by comparing it to the new formulation, using model blade elements representative of a wind turbine, a cooling fan and an aircraft propeller. The correct form of Schlinker and Amiet's theory (1981) is identified. It is valid at high enough frequency, i.e. for a Helmholtz number relative to chord greater than one and a rotational frequency much smaller than the angular frequency of the noise sources.

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The present study aims at accounting for swirling mean flow effects on rotor trailing-edge noise. Indeed, the mean flow in between the rotor and the stator of the fan or of a compressor stage is highly swirling. The extension of Ffowcs-Williams & Hawkings' acoustic analogy in a medium at rest with moving surfaces and of Goldstein's acoustic analogy in a circular duct with uniform mean flow to a swirling mean flow in an annular duct is introduced. It is first applied to tonal noise. In most cases, the swirl modifies the pressure distribution downstream of the fan. In several configurations, when the swirl is rather close to a solid body swirl, it is often sufficient to apply a simple Doppler effect correction when predicting the duct modes in uniform mean flow in order to predict accurately the noise radiated with swirl. However, in other realistic configurations, the swirling mean-flow effect cannot be addressed using this simple Doppler effect correction. Second, a rotor trailing-edge noise model accounting for both the effects of the annular duct and the swirling mean flow is developed and applied to a realistic fan rotor with different swirling and sheared mean flows (and as a result different associated blade stagger angles). The benchmark cases are built from the Boeing 18-inch Fan Rig Broadband Noise Test. In all cases the swirling mean flow has an effect. In some cases the a simple Doppler effect may address it, but, in other realistic configurations our acoustic analogy with swirl is needed. © 2012 by the authors. Published by the American Institute of Aeronautics and Astronautics, Inc.

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The dynamic deformation of both edge clamped stainless steel sandwich panels with a pyramidal truss core and equal mass monolithic plates loaded by spherically expanding shells of dry and water saturated sand has been investigated, both experimentally and via a particle based simulation methodology. The spherically expanding sand shell is generated by detonating a sphere of explosive surrounded by a shell of either dry or water saturated synthetic sand. The measurements show that the sandwich panel and plate deflections decrease with increasing stand-off between the center of the charge and the front of the test structures. Moreover, for the same charge and sand mass, the deflections of the plates are significantly higher in the water saturated sand case compared to that of dry sand. For a given stand-off, the mid-span deflection of the sandwich panel rear faces was substantially less than that of the corresponding monolithic plate for both the dry and water saturated sand cases. The experiments were simulated via a coupled discrete-particle/ finite element scheme wherein the high velocity impacting sand is modeled by interacting particles while the plate is modeled within a Lagrangian finite element setting. The simulations are in good agreement with the measurements for the dry sand impact of both the monolithic and sandwich structures. However, the simulations underestimate the effect of stand-off in the case of the water saturated sand explosion, i.e. the deflections decrease more sharply with increasing stand-off in the experiments compared to the simulations. The simulations reveal that the momentum transmitted into the sandwich and monolithic plate structures by the sand shell is approximately the same, consistent with a small fluid-structure interaction effect. The smaller deflection of the sandwich panels is therefore primarily due to the higher bending strength of sandwich structures. © 2013 The Authors. Published by Elsevier Ltd. All rights reserved.

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The transition of a separated shear layer over a flat plate, in the presence of periodic wakes and elevated free-stream turbulence (FST), is numerically investigated using Large Eddy Simulation (LES). The upper wall of the test section is inviscid and specifically contoured to impose a streamwise pressure distribution over the flat plate to simulate the suction surface of a low-pressure turbine (LPT) blade. Two different distributions representative of a 'high-lift' and an 'ultra high-lift' turbine blade are examined. Results obtained from the current LES compare favourably with the extensive experimental data previously obtained for these configurations. The LES results are then used to further investigate the flow physics involved in the transition process.In line with experimental experience, the benefit of wakes and FST obtained by suppressing the separation bubble, is more pronounced in 'ultra high-lift' design when compared to the 'high-lift' design. Stronger 'Klebanoff streaks' are formed in the presence of wakes when compared to the streaks due to FST alone. These streaks promoted much early transition. The weak Klebanoff streaks due to FST continued to trigger transition in between the wake passing cycles.The experimental inference regarding the origin of Klebanoff streaks at the leading edge has been confirmed by the current simulations. While the wake convects at local free-stream velocity, its impression in the boundary layer in the form of streaks convects much slowly. The 'part-span' Kelvin-Helmholtz structures, which were observed in the experiments when the wake passes over the separation bubble, are also captured. The non-phase averaged space-time plots manifest that reattachment is a localized process across the span unlike the impression of global reattachment portrayed by phase averaging. © 2013 Elsevier Inc.

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Our Raman measurement indicates that the intensity of the peaks (510 and 645 cm(-1)) related to nitrogen concentration is enhanced in MgZnO compared with that in ZnO. Using first-principles band structure methods, we calculated the formation energy and transition energy level for nitrogen acceptor in ZnO and random MgxZn1-xO (with x=0.25) alloy. Our calculations show that the incorporation of nitrogen can be enhanced as Mg is alloyed into ZnO, which agrees with our experiments. The acceptor energy level deeper in the alloy ascribes to the downward shift of the valence-band maximum edge in the presence of magnesium. (c) 2008 American Institute of Physics.

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Polarization-resolved edge-emitting electroluminescence (EL) studies of InGaN/GaN MQWs of wavelengths from near-UV (390 nm) to blue (468 nm) light-emitting diodes (LEDs) are performed. Although the TE mode is dominant in all the samples of InGaN/GaN MQW LEDs, an obvious difference of light polarization properties is found in the InGaN/GaN MQW LEDs with different wavelengths. The polarization degree decreases from 52.4% to 26.9% when light wavelength increases. Analyses of band structures of InGaN/GaN quantum wells and luminescence properties of quantum dots imply that quantum-dot-like behavior is the dominant reason for the low luminescence polarization degree of blue LEDs, and the high luminescence polarization degree of UV LEDs mainly comes from QW confinement and the strain effect. Therefore, indium induced carrier confinement (quantum-dot-like behavior) might play a major role in the polarization degree change of InGaN/GaN MQW LEDs from near violet to blue.

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High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural proper-ties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

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The relaxation of the misfit strain by the formation of misfit dislocations in InxGa1-xN/GaN multiple quantum wells grown by metal-organic chemical-vapor deposition was investigated by the cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. It is found that the misfit dislocations generated from strain relaxation are all pure-edge threading dislocations with burgers vectors of b=1/3<11 (2) over bar0>. The misfit dislocations arise from the strain relaxation due to the thickness of strained layer greater than the critical thickness. The relaxation of strained layer was mainly achieved by the formation of dislocations and localization of In, while the dislocations changed their slip planes from {0001} to {10 (1) over bar0}. With the increasing temperature, the efficiency of photoluminescence decrease sharply. It indicates that the relaxation of the misfit strain has a strong effect on optical efficiency of film. (C) 2004 American Institute of Physics.

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Triple-axis x-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of the ratio of TMIn flow to group III flow on structural defects, such as dislocations and interface roughness, and optical properties of multiple quantum wells(MQWs). In this paper the mean densities of edge and screw dislocations in InGaN/GaN MQWs are obtained by W scan of every satellite peak of (0002) symmetric and (1012) asymmetric diffractions. At the same time, the interface roughness is measured by the radio of the full width at half maximum of satellite peaks to the peak orders. The experimental results showed that the density of dislocation, especially of edge dislocation, and interface roughness increase with the increase of the ratio, which leads to the decrease of PL properties. It also can be concluded that the edge dislocation acts as nonradiative recombination centers in InGaN/GaN MQWs. Also noticed is that the variation of the ratio has more influence on edge dislocation than on screw dislocation.

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The response of photonic memory effect in I-V characteristics of a specially designed photonic memory cell was reported. When the cell is biased in a storage mode, the optical excitation with the photon's energy larger than the energy gap gives rise to a step-like jump in the current. A set-up was used to measure the transient photocurrent at the biases where the step-like jump showed up. It is proved that the falling transient edge of the photocurrent, as the photoexcitation turns off, mainly maps the decaying of electrons and holes, which were previously stored in the cell during the illumination. Its time constant is a measure of photonic memory time.

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InGaN/GaN multiple quantum wells (MQWs) are grown by metal-organic chemical vapour deposition on (0001) sapphire substrates. Triple-axis X-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of trimethylgallium (TMGa) flow on structural defects, such as dislocations and interface roughness, and the optical properties of the MQWs. In this paper, a method, involving an ! scan of every satellite peak of TXRD, is presented to measure the mean dislocation density of InGaN/GaN MQWs. The experimental results show that under certain conditions which keep the trimethlyindium flow constant, dislocation density and interface roughness decrease with the increase of TMGa flow, which will improve the PL properties. It can be concluded that dislocations, especially edge dislocations, act as nonradiative recombination centres in InGaN/GaN MQWs. Also noticed is that changing the TMGa flow has more influence on edge dislocations than screw dislocations.

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InGaN/GaN multiquantum-well (MQW) structures grown by metalorganic chemical-vapor deposition on n-type GaN and capped by p-type GaN were investigated by cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. For the sample with strained-layer thicknesses greater than the critical thicknesses, a high density of pure edge type threading dislocations generated from MQW layers and extended to the cap layer was observed. These dislocations result from a relaxation of the strained layers when their thicknesses are beyond the critical thicknesses. Because of indium outdiffusion from the well layers due to the anneal effect of Mg-doped cap layer growth and defects generated from strain relaxation, the PL emission peak was almost depressed by the broad yellow band with an intensity maximum at 2.28 eV. But for the sample with strained-layer thicknesses less than the critical thicknesses, it has no such phenomenon. The measured critical thicknesses are consistent with the calculated values using the model proposed by Fischer, Kuhne, and Richter. (C) 2004 American Institute of Physics.