940 resultados para Dimeric tin sulfides


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A correlation between gas sensing properties and defect induced Room Temperature Ferromagnetism (RTFM) is demonstrated in non-stoichiometric SnO2 prepared by solution combustion method. The presence of oxygen vacancies (V-O), confirmed by RTFM is identified as the primary factor for enhanced gas sensing effect. The as-prepared SnO2 shows high saturation magnetization of similar to 0.018 emu/g as compared to similar to 0.002 and similar to 0.0005 emu/g in annealed samples and SnO2 prepared by precipitation respectively. The SnO2 prepared by precipitation which is an equilibrium method of synthesis shows lesser defects compared to the combustion product and hence exhibits lesser sensitivity in spite of smaller crystallite size. The study utilizes RTFM as a potential tool to characterize metal oxide gas sensors and recognizes the significance of oxygen vacancies in sensing mechanism over the microstructure. (C) 2014 AIP Publishing LLC.

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A number of functionalized beta-amino and gamma-amino sulfides and selenides have been synthesized involving a one-pot process of ring opening of cyclic sulfamidates with `in situ' generated thiolate and selenoate species from diaryl disulfides and diphenyl diselenide using rongalite. A mild and efficient method has been developed for the synthesis of cysteines from serine.

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Undoped and Sn-doped WO3 thin films were grown on cleaned glass substrates by chemical spray pyrolysis, using ammonium tungstate (NH4)(2)WO4 as the host precursor and tin chloride (SnCl4 center dot 5H(2)O) as the source of dopant. The XRD spectra confirm the monoclinic structure with a sharp narrow peak along (200) direction along with other peaks of low relative intensities for all the samples. On Sn doping, the films exhibit reduced crystallinity relative to the undoped film. The standard deviation for relative peak intensity with dopant concentration shows enhancement in heterogeneous nucleation growth. As evident from SEM images, on Sn doping, appearance of island-like structure (i.e., cluster of primary crystallites at few places) takes place. The transmittance has been found to decrease in all the Sn-doped films. The optical band gap has been calculated for both direct and indirect transitions. On Sn doping, the direct band gap shows a red shift and becomes 2.89 eV at 2 at.% doping. Two distinct peaks, one blue emission at 408 nm and other green emission at 533 nm, have been found in the PL spectra. Electrical conductivity has been found to increase with Sn doping.

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FtsE is one of the earliest cell division proteins that assembles along with FtsX at the mid-cell site during cell division in Escherichia coli. Both these proteins are highly conserved across diverse bacterial genera and are predicted to constitute an ABC transporter type complex, in which FtsE is predicted to bind ATP and hydrolyse it, and FtsX is predicted to be an integral membrane protein. We had earlier reported that the MtFtsE of the human pathogen, Mycobacterium tuberculosis, binds ATP and interacts with MtFtsX on the cell membrane of M. tuberculosis and E. coli. In this study, we demonstrate that MtFtsE is an ATPase, the active form of which is a dimer, wherein the participating monomers are held together by non-covalent interactions, with the Cys84 of each monomer present at the dimer interface. Under oxidising environment, the dimer gets stabilised by the formation of Cys84-Cys84 disulphide bond. While the recombinant MtFtsE forms a dimer on the membrane of E. coli, the native MtFtsE seems to be in a different conformation in the M. tuberculosis membrane. Although disulphide bridges were not observed on the cytoplasmic side (reducing environment) of the membrane, the two participating monomers could be isolated as dimers held together by non-covalent interactions. Taken together, these findings show that MtFtsE is an ATPase in the non-covalent dimer form, with the Cys84 of each monomer present in the reduced form at the dimer interface, without participating in the dimerisation or the catalytic activity of the protein.

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Herein, we present the design and synthesis of new redox-active monomeric and dimeric (gemini) cationic lipids based on ferrocenylated cholesterol derivatives for gene delivery. The cationic cholesterols are shown to be transfection efficient after being formulated with the neutral helper lipid DOPE in the presence of serum (FBS). The redox activity of the resulting co-liposomes and their lipoplexes could be regulated using the alkanyl ferrocene moiety attached to the ammonium head groups of the cationic cholesterols. Atomic force microscopy (AFM), dynamic light scattering (DLS) and zeta potential measurements were performed to characterize the co-liposomal aggregates and their complexes with pDNA. The transfection efficiency of lipoplexes could be tuned by changing the oxidation state of the ferrocene moiety. The gene transfection capability was assayed in terms of green fluorescence protein (GFP) expression using pEGFP-C3 plasmid DNA in three cell lines of different origins, namely Caco-2, HEK293T and HeLa, in the presence of serum. The vesicles possessing ferrocene in the reduced state induced an efficient transfection, even better than a commercial reagent Lipofectamine 2000 (Lipo 2000) as evidenced by flow cytometry and fluorescence microscopy. All the co-liposomes containing the oxidized ferrocene displayed diminished levels of gene expression. Gene transfection events from the oxidized co-liposomes were further potentiated by introducing ascorbic acid (AA) as a reducing agent during lipoplex incubation with cells, leading to the resumption of transfection activity. Assessment of transfection capability of both reduced and oxidized co-liposomes was also undertaken following cellular internalization of labelled pDNA using confocal microscopy and flow cytometry. Overall, we demonstrate here controlled gene transfection activities using redox-driven, transfection efficient cationic monomeric and dimeric cholesterol lipids. Such systems could be used in gene delivery applications where transfection needs to be performed spatially or temporally.

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Tin oxide nanoparticles are synthesized using solution combustion technique and tin oxide - carbon composite thick films are fabricated with amorphous carbon as well as carbon nanotubes (CNTs). The x-ray diffraction, Raman spectroscopy and porosity measurements show that the as-synthesized nanoparticles are having rutile phase with average crystallite size similar to 7 nm and similar to 95 m(2)/g surface area. The difference between morphologies of the carbon doped and CNT doped SnO2 thick films, are characterized using scanning electron microscopy and transmission electron microscopy. The adsorption-desorption kinetics and transient response curves are analyzed using Langmuir isotherm curve fittings and modeled using power law of semiconductor gas sensors. (C) 2015 Author(s).

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for selectively targeting cancer cells. Herein, we report the design and evolution of a new kind of carbazole-based benzimidazole dimers for their efficient telomerase inhibition activity. Spectroscopic titrations reveal the ligands high affinity toward the G4 DNA with significantly higher selectivity over duplex-DNA. The electrophoretic mobility shift assay shows that the ligands efficiently promote the formation of 04 DNA even at a lower concentration of the stabilizing K+ ions. The TRAP-LIG assay demonstrates the ligand's potential telomerase inhibition activity and also establishes that the activity proceeds via G4 DNA stabilization. An efficient nuclear internalization of the ligands in several common cancer cells (HeLa, HT1080, and A549) also enabled differentiation between normal HFF cells in co-cultures of cancer and normal ones. The ligands induce significant apoptotic response and antiproliferative activity toward cancer cells selectively when compared to the normal cells.

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Tin (II) sulphide (SnS), a direct band gap semiconductor compound, has recently received great attention due to its unique properties. Because of low cost, absence of toxicity, and good abundance in nature, it is becoming a candidate for future multifunctional devices particularly for light conversion applications. Although the current efficiencies are low, the cost-per-Watt is becoming competitive. At room temperature, SnS exhibits stable low-symmetric, double-layered orthorhombic crystal structure, having a = 0.4329, b = 1.1192, and c = 0.3984nm as lattice parameters. These layer-structured materials are of interest in various device applications due to the arrangement of structural lattice with cations and anions. The layers of cations are separated only by van der Waals forces that provide intrinsically chemically inert surface without dangling bonds and surface density of states. As a result, there is no Fermi level pinning at the surface of the semiconductor. This fact leads to considerably high chemical and environmental stability. Further, the electrical and optical properties of SnS can be easily tailored by modifying the growth conditions or doping with suitable dopants without disturbing its crystal structure.In the last few decades, SnS has been synthesized and studied in the form of single-crystals and thin-films. Most of the SnS single-crystals have been synthesized by Bridgeman technique, whereas thin films have been developed using different physical as well as chemical deposition techniques. The synthesis or development of SnS structures in different forms including single-crystals and thin films, and their unique properties are reviewed here. The observed physical and chemical properties of SnS emphasize that this material could has novel applications in optoelectronics including solar cell devices, sensors, batteries, and also in biomedical sciences. These aspects are also discussed.

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Tin oxide (SnO2) nanowires are synthesized by Au catalyzed chemical vapor deposition of Sn and C mixture at 900 degrees C by employing a continuous flow of Ar: O-2 (10:1) for an hour. X-ray diffraction and Raman spectroscopy studies indicate that the as-grown SnO2 nanowires are crystalline in nature with tetragonal rutile phase. Electron microscopy studies reveal towards high aspect ratio of nanowires. The field emission studies show that SnO2 nanowires grown on Si substrate exhibit low turn-on field of 1.75 V/mu m (at 0.1 mu A/cm(2)) and long-term emission stability over a period of more than 50 h with a current density of 4 mu A/cm(2) at a constant electric field of 2.25 V/mu m. Hardly any considerable degradation in the emission current is noticed even after 50 h which may be attributed to the high crystallinity of SnO2 nanowires. (C) 2015 Elsevier B.V. All rights reserved.

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Earth abundant tin sulfide (SnS) has attracted considerable attention as a possible absorber material for low-cost solar cells due to its favourable optoelectronic properties. Single crystals of SnS were grown by physical vapour deposition (PVD) technique. Microindentation studies were carried out on the cleaved surfaces of the crystals to understand their mechanical behaviour. Microhardness increased initially with the load, giving sharp maximum at 15 g. Quenching effect has increased the microhardness, while annealing reduced the microhardness of grown crystals. The hardness values of as-grown, annealed and quenched samples at 15 g load are computed to be 99.69, 44.52 and 106.29 kg/mm(2) respectively. The microhardness of PVD grown crystals are high compared to CdTe, a leading low-cost PV material. The as-grown faces are found to be fracture resistant.

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The proposed work discusses different parameters which are considered to improve the performance of a tin oxide-based thin film gas sensor. This includes analysing and deducing suitable catalytic additives to enhance the performance of the sensor in terms of selectivity and sensitivity. Chemical sensitization and electronic sensitization are performed to improve the rate of response of the sensor.

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The surface tension of molten tin has been determined by the sessile drop method at The surface tension of molten tin has been determined by the sessile drop method at temperatures ranging from 523 to 1033 K and in the oxygen partial pressure (P-O2) range from 2.85 x 10(-19) to 8.56 x 10(-6) MPa, and its dependence on temperature and oxygen partial pressure has been analyzed. At P-O2 = 2.85 x 10(-19) and 1.06 x 10(-15) MPa, the surface tension decreases linearly with the increase of temperature and its temperature coefficients are -0.151 and -0.094 mNm(-1) K-1, respectively. However, at high P-O2 (3.17 x 10(-10), 8.56 x 10(-6) MPa), the surface tension increases with the temperature near the melting point (505 K) and decreases above 723 K. The surface tension decrease with increasing P-O2 is much larger near the melting point than at temperatures above 823 K. The contact angle between the molten tin and the alumina substrate is 158-173degrees, and the wettability is poor.

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Orthogonal designs are used to investigate the main factors when doing experiments in which pulse bias is superimposed on d.c. bias during cathodic are deposition of TiN. Pulse peak, duty cycle, frequency, direct voltage, are current and pressure all are investigated when coating TiN on HSS substrates. Roughness, surface micrograph, microhardness and thickness are tested. By analysis of variance, it is shown that pressure and frequency are the main factors. R-a and droplet density of the film with (d.c. + pulse) bias decrease. A simple explanation for the result is suggested.

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Nanoindentation and nanoscratch tests were performed for titanium nitride (TiN) coatings on different tool steel substrates to investigate the indentation/scratch induced deformation behavior of the coatings and the adhesion of the coating–substrate interfaces and their tribological property. In this work, TiN coatings with a thickness of about 500 nm were grown on GT35, 9Cr18 and 40CrNiMo steels using vacuum magnetic-filtering arc plasma deposition. In the nanoindentation tests, the hardness and modulus curves for TiN/GT35 reduced the slowest around the film thickness 500 nm with the increase of indentation depth, followed by TiN/9Cr18 and TiN/40CrNiMo. Improving adhesion properties of coating and substrate can decrease the differences of internal stress field. The scratch tests showed that the scratch response was controlled by plastic deformation in the substrate. The substrate plays an important role in determining the mechanical properties and wear resistance of such coatings. TiN/GT35 exhibited the best load-carrying capacity and scratch/wear resistance. As a consequence, GT35 is the best substrate for TiN coatings of the substrate materials tested.