The effect of surface hardening on the elastic shakedown of elliptical contacts

The effect of varying both the aspect ratio and the coefficient of friction of contacts with elliptical geometry on their elastic shakedown performance has been examined theoretically for surfaces with two types of subsurface hardness or strength profiles. In stepwise hardening the hard layer is of uniform strength while in linear hardening its strength reduces from a maximum at the surface to that of the core at the base of the hardened layer. The shakedown load is expressed as the ratio of the maximum Hertzian pressure to the strength of the core material. As the depth of hardening, expressed as a multiple of the elliptical semi-axis, is increased so the potential shakedown load increases from a level that is appropriate to a uniform half-space of unhardened material to a value reflecting the hardness of the surface and near-surface material. In a step-hardened material, the shakedown limit for a surface 'pummelled' by the passage of a sequence of such loads reaches a cut-off or plateau value, which cannot be exceeded by further increases in hardening depth irrespective of the value of the friction coefficient. For a linear-hardened material the corresponding plateau is approached asymptotically. The work confirms earlier results on the upper bounds on shakedown of both point and line contacts and provides numerical values of shakedown loads for intermediate geometries. In general, the case depth required to achieve a given shakedown limit reduces in moving from a transversely moving nominal line load to an axisymmetric point load.

Superconducting properties of Gd-Ba-Cu-O single grains processed from a new, Ba-rich precursor compound

Gd-Ba-Cu-O (GdBCO) single grains have been previously melt-processed successfully in air using a generic Mg-Nd-Ba-Cu-O (Mg-NdBCO) seed crystal. Previous research has revealed that the addition of a small amount of BaO 2 to the precursor powders prior to melt processing can suppress the formation of Gd/Ba solid solution, and lead to a significant improvement in superconducting properties of the single grains. Research into the effects of a higher Ba content on single grain growth, however, has been limited by the relatively small grain size in the earlier studies. This has been addressed by developing Ba-rich precursor compounds Gd-163 and Gd-143, fabricated specifically to enable the presence of greater concentrations of Ba during the melt process. In this study, we propose a new processing route for the fabrication of high performance GdBCO single grain bulk superconductors in air by enriching the precursor powder with these new Ba rich compounds. The influence of the addition of the new compounds on the microstructures and superconducting properties of GdBCO single grains is reported. © 2008 IOP Publishing Ltd.

Flazinamide, a novel beta-carboline compound with anti-HIV actions

A beta-carboline compound, flazin isolated from Suillus granulatus has been shown weak anti-HIV-1 activity. Based on the structure of flazin, flazinamide [1-(5'-hydromethyl-2'-furyl)-beta-carboline-3-carboxamide] was synthesized and its anti-HIV activitie

Isolatin [sic] the bacteria produced biactive [sic] metabolits [sic] cytotoxic compound in order to prduction [sic] anticancer substance in the coral regin [sic] the Persian Gulf (Larak Island)

In the present investigation the marine bacteria isolated from corals, sponges sea water and sediments of coral regions in the larak Island located in the Persian Gulf and were examined for ability to produce cytotoxic metabolits in order to use as an anticancer compounds. Cytotoxic effect were isolated bacteria from different samples and were examined by Artemia Cytotoxic Bioassay test, in which 4.5 percent of sea waters, 12 percent of sediments and 28 percent of marine invertebrat showed cytotoxic activity, using Brine Shrimp Bioassay test. Streptomyces S-2004 isolated from soft coral specified as Sinularia erecta had LC50=0.5mg/m1 in Brine Shrimp Bioaassay test. The streptomyces S-2004 produced cytotoxic metabolits in low nutrient condition and sea water medium after 7 days on 250 rpm shaken in vitro condition. The extract partially were semipurified. Then ethyl acetate extraction from aceton extracted of bacterial plate had cytotoxic effect (LC50=4.19ktg/m1) in Human epidermoid carcinoma of mouth cells (KB) by using neutral red assay. Morphological effects of this extract on KB cells showed turgescence, cellular blebs and apoptosis which was a proof for anticancer compounds of the extract. It is seems that streptomyces S-2004 is a new strain and could be introduced as a talented bacteria, which produced cytotoxic metabolits.

Technology development of photovoltaic concentrator system

The developments of standard, projects and technology of PV concentrator system was briefly reported. A detailed description of photovoltaic concentrator system was given, which included technology and recent development of optical components, receivers and balance of system (BOS). The heat sink of passive cooling and active cooling was given. A brief discussion promise of this technology was included. Finally, main technological problems were presented.

Radiation Concentrator Device

A radiation concentrator device 21 for improved efficiency in solar systems by limiting reflected light, comprising a radiation concentrator element 27 comprising a radiation transmissive surface 29, a radiation receiving device and disposed on the incident radiation side of the concentrator element 27 is a recapture element 23 for recapturing at least a portion of radiation lost from the concentrator element 27, where the recapturing element allows transmission of incident light into the concentrator element 27, recaptures escaping radiation from the concentrator element and reflecting the radiation back into the concentrator element. Also disclosed are radiation concentrator device 21 where the recapture element 23 comprises ridged or grooved structures to increase the internal reflection of the radiation. The concentrator element 27 may also be provided with luminescent materials.

III-V compound semiconductor nanowires for optoelectronic device applications

GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size. © 2011 World Scientific Publishing Company.

III-V compound semiconductor nanowires

InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter. © 2009 IEEE NANO Organizers.

III-V compound semiconductor nanowires

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter. © 2009 IEEE.

Analytical formulation of modal frequency split in the elliptical mode of SCS micromechanical disk resonators

This paper presents an analytical formulation of frequency splitting observed in the elliptical modes of single crystal silicon (SCS) micromechanical disk resonators. Taking the anisotropic elasticity of SCS into account, new formulae for computing modal mass and modal stiffness are first derived for accurate prediction of the modal frequency. The derived results are in good agreement with finite element simulation, showing a factor of 10 improvement in the prediction accuracy as compared to using the formula for the isotropic case. In addition, the analysis successfully explains the effect of anisotropy on the modal frequency splitting of primary elliptical modes, for which the maximum modal displacement is aligned with the directions of maximum (1 1 0) and minimum (1 0 0) elasticity respectively on a (1 0 0) SCS wafer. The measured frequency splitting of other degenerate modes is due to the manufacturing imperfections. © 2014 IOP Publishing Ltd.

Predictive control for spacecraft rendezvous in an elliptical orbit using an FPGA

A field programmable gate array (FPGA)-based predictive controller for a spacecraft rendezvous manoeuvre is presented. A linear time varying prediction model is used to accommodate elliptical orbits, and a variable prediction horizon is used to facilitate finite time completion of manoeuvres. The resulting constrained optimisation problems are solved using a primal dual interior point algorithm. The majority of the computational demand is in solving a set of linear equations at each iteration of this algorithm. To accelerate this operation, a custom circuit is implemented, using a combination of Mathworks HDL Coder and Xilinx System Generator for DSP, and used as a peripheral to a MicroBlaze soft core processor. The system is demonstrated in closed loop by linking the FPGA with a simulation of the plant dynamics running in Simulink on a PC, using Ethernet. © 2013 EUCA.

Field programmable gate array based predictive control system for spacecraft rendezvous in elliptical orbits

Copyright © 2014 John Wiley & Sons, Ltd. Copyright © 2014 John Wiley & Sons, Ltd. Summary A field programmable gate array (FPGA) based model predictive controller for two phases of spacecraft rendezvous is presented. Linear time-varying prediction models are used to accommodate elliptical orbits, and a variable prediction horizon is used to facilitate finite time completion of the longer range manoeuvres, whilst a fixed and receding prediction horizon is used for fine-grained tracking at close range. The resulting constrained optimisation problems are solved using a primal-dual interior point algorithm. The majority of the computational demand is in solving a system of simultaneous linear equations at each iteration of this algorithm. To accelerate these operations, a custom circuit is implemented, using a combination of Mathworks HDL Coder and Xilinx System Generator for DSP, and used as a peripheral to a MicroBlaze soft-core processor on the FPGA, on which the remainder of the system is implemented. Certain logic that can be hard-coded for fixed sized problems is implemented to be configurable online, in order to accommodate the varying problem sizes associated with the variable prediction horizon. The system is demonstrated in closed-loop by linking the FPGA with a simulation of the spacecraft dynamics running in Simulink on a PC, using Ethernet. Timing comparisons indicate that the custom implementation is substantially faster than pure embedded software-based interior point methods running on the same MicroBlaze and could be competitive with a pure custom hardware implementation.