Optimization of cold and warm workability in stainless steel type AISI 316L using instability maps

The deformation characteristics of stainless steel type AISI 316L under compression in the temperature range 20 to 600 degrees C and strain rate range 0.001 to 100 s(-1) have been studied with a view to characterizing the flow instabilities occurring in the microstructure. At temperatures lower than 100 degrees C and strain rates higher than 0.1 s(-1), 316L stainless steel exhibits flow localization whereas dynamic strain aging (DSA) occurs at intermediate temperatures and below 1 s(-1). To avoid the above flow instabilities, cold working should be carried out at strain rates less than 0.1 s(-1). Warm working of stainless steel type AISI 316L may be done in the temperature and strain rate regime of: 300 to 400 degrees C and 0.001 s(-1) 300 to 450 degrees C and 0.01 s(-1): 450 to 600 degrees C and 0.1 s(-1); 500 degrees C and 1 s(-1) since these regions are free from flow instabilities like DSA and flow localization. The continuum criterion, developed on the basis of the principles of maximum rate of entropy production and separability of the dissipation function, predicts accurately all the above instability features.

Cold model study of local liquid holdup in the dropping zone using x-ray

It is important to know and to quantify the liquid holdups both dynamic and static at local levels as it will lead to understand various blast furnace phenomena properly such as slag/metal.gas.solid reactions, gas flow behaviour and interfacial area between the gas/solid/liquid. In the present study, considering the importance of local liquid holdup and non-availability of holdup data in these systems, an attempt has been made to quantify the local holdups in the dropping and around raceway zones in a cold model study using a non-wetting packing for liquid. In order to quantify the liquid holdups at microscopic level, a previously developed technique, X-ray radiography, has been used. It is observed that the liquid flows in preferred paths or channels which carry droplets/rivulets. It has been found that local holdup in some regions of the packed bed is much higher than average at a particular flow rate and this can have important consequences for the correct modelling of such systems.

Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: Analytical model and design considerations

In this paper, we propose for the first time, an analytical model for short channel effects in nanoscale source/drain extension region engineered double gate (DG) SOI MOSFETs. The impact of (i) lateral source/drain doping gradient (d), (ii) spacer width (s), (iii) spacer to doping gradient ratio (s/d) and (iv) silicon film thickness (T-si), on short channel effects - threshold voltage (V-th) and subthreshold slope (S), on-current (I-on), off-current (I-on) and I-on/I-off is extensively analysed by using the analytical model and 2D device simulations. The results of the analytical model confirm well with simulated data over the entire range of spacer widths, doping gradients and effective channel lengths. Results show that lateral source/drain doping gradient along with spacer width can not only effectively control short channel effects, thus presenting low off-current, but can also be optimised to achieve high values of on-currents. The present work provides valuable design insights in the performance of nanoscale DG Sol devices with optimal source/drain engineering and serves as a tool to optimise important device and technological parameters for 65 nm technology node and below. (c) 2006 Elsevier Ltd. All rights reserved.