Beitrag zur Dimensionierung von automatischen Sortiersystemen (Sorter)

Automatischen Sortiersysteme (Sorter) besitzen in der Intralogistik eine große Bedeutung. Sorter erreichen eine ausdauernd hohe Sortierleistung bei gleichzeitig geringer Fehlsortierrate und bilden deshalb oft den zentralen Baustein in Materialflusssystemen mit hoher Umschlagsrate. Distributionszentren mit Lager und Kommissionierfunktion sind typische Vertreter solcher Materialflusssysteme. Ein Sorter besteht aus den Subsystemen Einschleusung, Verteilförderer und Endstellen. Die folgenden Betrachtungen fokussieren auf ein Sortermodell mit einem Verteilförderer in Ringstruktur und einer Einzelplatzbelegung. Auf jedem Platz kann genau ein Gut transportiert werden. Der Verteilförderer besitzt somit eine feste Transportkapazität. Derartige Förderer werden in der Regel als Kippschalen- oder Quergurt-Sorter ausgeführt. Die theoretische Sortierleistung für diesen Sortertyp kann aus Fahrgeschwindigkeit und Transportplatzabstand bestimmt werden. Diese Systemleistung wird im praktischen Betrieb kaum erreicht. Verschiedene Faktoren im Einschleusbereich und im Ausschleusbereich führen zu einer Leistungsminderung. Betrachtungen zur Bestimmung der mittleren Warteschlangenlänge im Einschleusbereich sowie zur Ermittlung des Rundläuferanteils auf dem Verteilförderer werden im folgenden Beitrag vorgestellt. Diesem Beitrag liegt ein Forschungsvorhaben zugrunde, das aus Mitteln des Bundesministeriums für Wirtschaft und Technologie (BMWi) über die Arbeitsgemeinschaft industrieller Forschungsvereinigungen "Otto von Guericke" (AiF) gefördert und im Auftrage der Bundesvereinigung Logistik e.V. (BVL) ausgeführt wurde.

Desarrollo de circuitos de alta frecuencia para LTE

En este proyecto realizaremos un estudio del efecto de las interferencias procedentes de las redes públicas y veremos cómo afectan el rendimiento de las comunicaciones GSM-R que están en la banda de frecuencias adyacente, por un lado, definiremos las características de las redes públicas y como afectan los niveles de potencia y los anchos de banda de redes de banda ancha, especialmente LTE que dispone de un ancho de banda adaptativo que puede llegar hasta 20 MHZ, y por otro lado definiremos las características y las exigencias de las comunicaciones GSM-R que es una red privada que se utiliza actualmente para comunicaciones ferroviales. Con el objetivo de determinar el origen y los motivos de estas interferencias vamos a explicar cómo se produzcan las emisiones no deseadas de las redes públicas que son fruto de la intermodulación que se produzca por las características no lineales de los amplificadores, entre las emisiones no deseadas se puede diferenciar entre el dominio de los espurios y el dominio de las emisiones fuera de banda, para determinar el nivel de las emisiones fuera de banda definiremos la relación de fugas del canal adyacente, ACLR, que determina la diferencia entre el pico de la señal deseada y el nivel de señal interferente en la banda de paso. Veremos cómo afectan estas emisiones no deseadas a las comunicaciones GSMR en el caso de interferencias procedentes de señales de banda estrecha, como es el caso de GSM, y como afectan en el caso de emisiones de banda ancha con los protocolos UMTS y LTE, también estudiaremos como varia el rendimiento de la comunicación GSM-R frente a señales LTE de diferentes anchos de banda. Para reducir el impacto de las interferencias sobre los receptores GSM-R, analizaremos el efecto de los filtros de entrada de los receptores GSM-R y veremos cómo varia la BER y la ACLR. Además, con el objetivo de evaluar el rendimiento del receptor GSM-R ante diferentes tipos de interferencias, simularemos dos escenarios donde la red GSM-R se verá afectada por las interferencias procedente de una estación base de red pública, en el primer escenario la distancia entre la BS y MS GSM-R será de 4.6 KM, mientras en el segundo escenario simularemos una situación típica cuando un tren está a una distancia corta (25 m) de la BS de red pública. Finalmente presentaremos los resultados en forma de graficas de BER y ACLR, y tablas indicando los diferentes niveles de interferencias y la diferencia entre la potencia a la que obtenemos un valor óptimo de BER, 10-3, sin interferencia y la potencia a la que obtenemos el mismo valor con interferencias. ABSTRACT In this project we will study the interference effect from public networks and how they affect the performance of GSM-R communications that are in the adjacent frequency band, furthermore, we will define the characteristics of public networks and will explain how the power levels and bandwidth broadband networks are affected as a result, especially LTE with adaptive bandwidth that can reach 20 MHZ. Lastly, we will define the characteristics and requirements of the GSM-R communications, a private network that is currently used for railways communications. In order to determine the origin and motives of these interferences, we will explain what causes unwanted emissions of public networks that occur as a result. The intermodulation, which is caused by the nonlinear characteristics of amplifiers. Unwanted emissions from the transmitter are divided into OOB (out-of-band) emission and spurious emissions. The OOB emissions are defined by an Adjacent Channel Leakage Ratio (ACLR) requirement. We'll analyze the effect of the OOB emission on the GSM-R communication in the case of interference from narrowband signals such as GSM, and how they affect emissions in the case of broadband such as UMTS and LTE; also we will study how performance varies with GSM-R versus LTE signals of different bandwidths. To reduce the impact of interference on the GSM-R receiver, we analyze the effect of input filters GSM-R receivers to see how it affects the BER (Bits Error Rate) and ACLR. To analyze the GSM-R receiver performance in this project, we will simulate two scenarios when the GSM-R will be affected by interference from a base station (BS). In the first case the distance between the public network BS and MS GSM-R is 4.6 KM, while the second case simulates a typical situation when a train is within a short distance, 25 m, of a public network BS. Finally, we will present the results as BER and ACLR graphs, and tables showing different levels of interference and the differences between the power to obtain an optimal value of BER, 10-3, without interference, and the power that gets the same value with interference.

Design and Simulation of Deep Nanometer SRAM Cells under Energy, Mismatch, and Radiation Constraints

La fiabilidad está pasando a ser el principal problema de los circuitos integrados según la tecnología desciende por debajo de los 22nm. Pequeñas imperfecciones en la fabricación de los dispositivos dan lugar ahora a importantes diferencias aleatorias en sus características eléctricas, que han de ser tenidas en cuenta durante la fase de diseño. Los nuevos procesos y materiales requeridos para la fabricación de dispositivos de dimensiones tan reducidas están dando lugar a diferentes efectos que resultan finalmente en un incremento del consumo estático, o una mayor vulnerabilidad frente a radiación. Las memorias SRAM son ya la parte más vulnerable de un sistema electrónico, no solo por representar más de la mitad del área de los SoCs y microprocesadores actuales, sino también porque las variaciones de proceso les afectan de forma crítica, donde el fallo de una única célula afecta a la memoria entera. Esta tesis aborda los diferentes retos que presenta el diseño de memorias SRAM en las tecnologías más pequeñas. En un escenario de aumento de la variabilidad, se consideran problemas como el consumo de energía, el diseño teniendo en cuenta efectos de la tecnología a bajo nivel o el endurecimiento frente a radiación. En primer lugar, dado el aumento de la variabilidad de los dispositivos pertenecientes a los nodos tecnológicos más pequeños, así como a la aparición de nuevas fuentes de variabilidad por la inclusión de nuevos dispositivos y la reducción de sus dimensiones, la precisión del modelado de dicha variabilidad es crucial. Se propone en la tesis extender el método de inyectores, que modela la variabilidad a nivel de circuito, abstrayendo sus causas físicas, añadiendo dos nuevas fuentes para modelar la pendiente sub-umbral y el DIBL, de creciente importancia en la tecnología FinFET. Los dos nuevos inyectores propuestos incrementan la exactitud de figuras de mérito a diferentes niveles de abstracción del diseño electrónico: a nivel de transistor, de puerta y de circuito. El error cuadrático medio al simular métricas de estabilidad y prestaciones de células SRAM se reduce un mínimo de 1,5 veces y hasta un máximo de 7,5 a la vez que la estimación de la probabilidad de fallo se mejora en varios ordenes de magnitud. El diseño para bajo consumo es una de las principales aplicaciones actuales dada la creciente importancia de los dispositivos móviles dependientes de baterías. Es igualmente necesario debido a las importantes densidades de potencia en los sistemas actuales, con el fin de reducir su disipación térmica y sus consecuencias en cuanto al envejecimiento. El método tradicional de reducir la tensión de alimentación para reducir el consumo es problemático en el caso de las memorias SRAM dado el creciente impacto de la variabilidad a bajas tensiones. Se propone el diseño de una célula que usa valores negativos en la bit-line para reducir los fallos de escritura según se reduce la tensión de alimentación principal. A pesar de usar una segunda fuente de alimentación para la tensión negativa en la bit-line, el diseño propuesto consigue reducir el consumo hasta en un 20 % comparado con una célula convencional. Una nueva métrica, el hold trip point se ha propuesto para prevenir nuevos tipos de fallo debidos al uso de tensiones negativas, así como un método alternativo para estimar la velocidad de lectura, reduciendo el número de simulaciones necesarias. Según continúa la reducción del tamaño de los dispositivos electrónicos, se incluyen nuevos mecanismos que permiten facilitar el proceso de fabricación, o alcanzar las prestaciones requeridas para cada nueva generación tecnológica. Se puede citar como ejemplo el estrés compresivo o extensivo aplicado a los fins en tecnologías FinFET, que altera la movilidad de los transistores fabricados a partir de dichos fins. Los efectos de estos mecanismos dependen mucho del layout, la posición de unos transistores afecta a los transistores colindantes y pudiendo ser el efecto diferente en diferentes tipos de transistores. Se propone el uso de una célula SRAM complementaria que utiliza dispositivos pMOS en los transistores de paso, así reduciendo la longitud de los fins de los transistores nMOS y alargando los de los pMOS, extendiéndolos a las células vecinas y hasta los límites de la matriz de células. Considerando los efectos del STI y estresores de SiGe, el diseño propuesto mejora los dos tipos de transistores, mejorando las prestaciones de la célula SRAM complementaria en más de un 10% para una misma probabilidad de fallo y un mismo consumo estático, sin que se requiera aumentar el área. Finalmente, la radiación ha sido un problema recurrente en la electrónica para aplicaciones espaciales, pero la reducción de las corrientes y tensiones de los dispositivos actuales los está volviendo vulnerables al ruido generado por radiación, incluso a nivel de suelo. Pese a que tecnologías como SOI o FinFET reducen la cantidad de energía colectada por el circuito durante el impacto de una partícula, las importantes variaciones de proceso en los nodos más pequeños va a afectar su inmunidad frente a la radiación. Se demuestra que los errores inducidos por radiación pueden aumentar hasta en un 40 % en el nodo de 7nm cuando se consideran las variaciones de proceso, comparado con el caso nominal. Este incremento es de una magnitud mayor que la mejora obtenida mediante el diseño de células de memoria específicamente endurecidas frente a radiación, sugiriendo que la reducción de la variabilidad representaría una mayor mejora. ABSTRACT Reliability is becoming the main concern on integrated circuit as the technology goes beyond 22nm. Small imperfections in the device manufacturing result now in important random differences of the devices at electrical level which must be dealt with during the design. New processes and materials, required to allow the fabrication of the extremely short devices, are making new effects appear resulting ultimately on increased static power consumption, or higher vulnerability to radiation SRAMs have become the most vulnerable part of electronic systems, not only they account for more than half of the chip area of nowadays SoCs and microprocessors, but they are critical as soon as different variation sources are regarded, with failures in a single cell making the whole memory fail. This thesis addresses the different challenges that SRAM design has in the smallest technologies. In a common scenario of increasing variability, issues like energy consumption, design aware of the technology and radiation hardening are considered. First, given the increasing magnitude of device variability in the smallest nodes, as well as new sources of variability appearing as a consequence of new devices and shortened lengths, an accurate modeling of the variability is crucial. We propose to extend the injectors method that models variability at circuit level, abstracting its physical sources, to better model sub-threshold slope and drain induced barrier lowering that are gaining importance in FinFET technology. The two new proposed injectors bring an increased accuracy of figures of merit at different abstraction levels of electronic design, at transistor, gate and circuit levels. The mean square error estimating performance and stability metrics of SRAM cells is reduced by at least 1.5 and up to 7.5 while the yield estimation is improved by orders of magnitude. Low power design is a major constraint given the high-growing market of mobile devices that run on battery. It is also relevant because of the increased power densities of nowadays systems, in order to reduce the thermal dissipation and its impact on aging. The traditional approach of reducing the voltage to lower the energy consumption if challenging in the case of SRAMs given the increased impact of process variations at low voltage supplies. We propose a cell design that makes use of negative bit-line write-assist to overcome write failures as the main supply voltage is lowered. Despite using a second power source for the negative bit-line, the design achieves an energy reduction up to 20% compared to a conventional cell. A new metric, the hold trip point has been introduced to deal with new sources of failures to cells using a negative bit-line voltage, as well as an alternative method to estimate cell speed, requiring less simulations. With the continuous reduction of device sizes, new mechanisms need to be included to ease the fabrication process and to meet the performance targets of the successive nodes. As example we can consider the compressive or tensile strains included in FinFET technology, that alter the mobility of the transistors made out of the concerned fins. The effects of these mechanisms are very dependent on the layout, with transistor being affected by their neighbors, and different types of transistors being affected in a different way. We propose to use complementary SRAM cells with pMOS pass-gates in order to reduce the fin length of nMOS devices and achieve long uncut fins for the pMOS devices when the cell is included in its corresponding array. Once Shallow Trench isolation and SiGe stressors are considered the proposed design improves both kinds of transistor, boosting the performance of complementary SRAM cells by more than 10% for a same failure probability and static power consumption, with no area overhead. While radiation has been a traditional concern in space electronics, the small currents and voltages used in the latest nodes are making them more vulnerable to radiation-induced transient noise, even at ground level. Even if SOI or FinFET technologies reduce the amount of energy transferred from the striking particle to the circuit, the important process variation that the smallest nodes will present will affect their radiation hardening capabilities. We demonstrate that process variations can increase the radiation-induced error rate by up to 40% in the 7nm node compared to the nominal case. This increase is higher than the improvement achieved by radiation-hardened cells suggesting that the reduction of process variations would bring a higher improvement.

Expression of error-prone polymerases in BL2 cells activated for Ig somatic hypermutation

High affinity antibodies are generated in mice and humans by means of somatic hypermutation (SHM) of variable (V) regions of Ig genes. Mutations with rates of 10−5–10−3 per base pair per generation, about 106-fold above normal, are targeted primarily at V-region hot spots by unknown mechanisms. We have measured mRNA expression of DNA polymerases ι, η, and ζ by using cultured Burkitt's lymphoma (BL)2 cells. These cells exhibit 5–10-fold increases in heavy-chain V-region mutations targeted only predominantly to RGYW (R = A or G, Y = C or T, W = T or A) hot spots if costimulated with T cells and IgM crosslinking, the presumed in vivo requirements for SHM. An ∼4-fold increase pol ι mRNA occurs within 12 h when cocultured with T cells and surface IgM crosslinking. Induction of pols η and ζ occur with T cells, IgM crosslinking, or both stimuli. The fidelity of pol ι was measured at RGYW hot- and non-hot-spot sequences situated at nicks, gaps, and double-strand breaks. Pol ι formed T⋅G mispairs at a frequency of 10−2, consistent with SHM-generated C to T transitions, with a 3-fold increased error rate in hot- vs. non-hot-spot sequences for the single-nucleotide overhang. The T cell and IgM crosslinking-dependent induction of pol ι at 12 h may indicate an SHM “triggering” event has occurred. However, pols ι, η, and ζ are present under all conditions, suggesting that their presence is not sufficient to generate mutations because both T cell and IgM stimuli are required for SHM induction.

Quantum-error correction on linear-nearest-neighbor qubit arrays

A quantum circuit implementing 5-qubit quantum-error correction on a linear-nearest-neighbor architecture is described. The canonical decomposition is used to construct fast and simple gates that incorporate the necessary swap operations allowing the circuit to achieve the same depth as the current least depth circuit. Simulations of the circuit's performance when subjected to discrete and continuous errors are presented. The relationship between the error rate of a physical qubit and that of a logical qubit is investigated with emphasis on determining the concatenated error correction threshold.

Tighter decoding reliability bound for Gallager's error-correcting code

Statistical physics is employed to evaluate the performance of error-correcting codes in the case of finite message length for an ensemble of Gallager's error correcting codes. We follow Gallager's approach of upper-bounding the average decoding error rate, but invoke the replica method to reproduce the tightest general bound to date, and to improve on the most accurate zero-error noise level threshold reported in the literature. The relation between the methods used and those presented in the information theory literature are explored.

Experimental comparison of coherent polarization-switched QPSK to polarization-multiplexed QPSK for 10 x 100 km WDM transmission

Polarization-switched quadrature phase-shift keying has been demonstrated experimentally at 40.5Gb/s with a coherent receiver and digital signal processing. Compared to polarization-multiplexed QPSK at the same bit rate, its back-to-back sensitivity at 10-3 bit-error-ratio shows 0.9dB improvement, and it tolerates about 1.6dB higher launch power for 10 × 100km, 50GHz-spaced WDM transmission allowing 1dB penalty in required optical-signal-to-noise ratio relative to back-to-back.

Reduction of nonlinear intrachannel effects by channel asymmetry in transmission lines with strong bit overlapping

We have examined the statistics of simulated bit-error rates in optical transmission systems with strong patterning effects and have found strong correlation between the probability of marks in a pseudorandom pattern and the error-free transmission distance. We discuss how a reduced density of marks can be achieved by preencoding optical data.

Upgrading legacy long-haul WDM systems through unbalancing the proportion of 1s and 0s in the transmitted data

We present experimental results for wavelength-division multiplexed (WDM) transmission performance using unbalanced proportions of 1s and 0s in pseudo-random bit sequence (PRBS) data. This investigation simulates the effect of local, in time, data unbalancing which occurs in some coding systems such as forward error correction when extra bits are added to the WDM data stream. We show that such local unbalancing, which would practically give a time-dependent error-rate, can be employed to improve the legacy long-haul WDM system performance if the system is allowed to operate in the nonlinear power region. We use a recirculating loop to simulate a long-haul fibre system.

Space time coding for polynomial phase modulated signals

Polynomial phase modulated (PPM) signals have been shown to provide improved error rate performance with respect to conventional modulation formats under additive white Gaussian noise and fading channels in single-input single-output (SISO) communication systems. In this dissertation, systems with two and four transmit antennas using PPM signals were presented. In both cases we employed full-rate space-time block codes in order to take advantage of the multipath channel. For two transmit antennas, we used the orthogonal space-time block code (OSTBC) proposed by Alamouti and performed symbol-wise decoding by estimating the phase coefficients of the PPM signal using three different methods: maximum-likelihood (ML), sub-optimal ML (S-ML) and the high-order ambiguity function (HAF). In the case of four transmit antennas, we used the full-rate quasi-OSTBC (QOSTBC) proposed by Jafarkhani. However, in order to ensure the best error rate performance, PPM signals were selected such as to maximize the QOSTBC’s minimum coding gain distance (CGD). Since this method does not always provide a unique solution, an additional criterion known as maximum channel interference coefficient (CIC) was proposed. Through Monte Carlo simulations it was shown that by using QOSTBCs along with the properly selected PPM constellations based on the CGD and CIC criteria, full diversity in flat fading channels and thus, low BER at high signal-to-noise ratios (SNR) can be ensured. Lastly, the performance of symbol-wise decoding for QOSTBCs was evaluated. In this case a quasi zero-forcing method was used to decouple the received signal and it was shown that although this technique reduces the decoding complexity of the system, there is a penalty to be paid in terms of error rate performance at high SNRs.

Applications of perceptual sparse representation (Spikegram) for copyright protection of audio signals

Chaque année, le piratage mondial de la musique coûte plusieurs milliards de dollars en pertes économiques, pertes d’emplois et pertes de gains des travailleurs ainsi que la perte de millions de dollars en recettes fiscales. La plupart du piratage de la musique est dû à la croissance rapide et à la facilité des technologies actuelles pour la copie, le partage, la manipulation et la distribution de données musicales [Domingo, 2015], [Siwek, 2007]. Le tatouage des signaux sonores a été proposé pour protéger les droit des auteurs et pour permettre la localisation des instants où le signal sonore a été falsifié. Dans cette thèse, nous proposons d’utiliser la représentation parcimonieuse bio-inspirée par graphe de décharges (spikegramme), pour concevoir une nouvelle méthode permettant la localisation de la falsification dans les signaux sonores. Aussi, une nouvelle méthode de protection du droit d’auteur. Finalement, une nouvelle attaque perceptuelle, en utilisant le spikegramme, pour attaquer des systèmes de tatouage sonore. Nous proposons tout d’abord une technique de localisation des falsifications (‘tampering’) des signaux sonores. Pour cela nous combinons une méthode à spectre étendu modifié (‘modified spread spectrum’, MSS) avec une représentation parcimonieuse. Nous utilisons une technique de poursuite perceptive adaptée (perceptual marching pursuit, PMP [Hossein Najaf-Zadeh, 2008]) pour générer une représentation parcimonieuse (spikegramme) du signal sonore d’entrée qui est invariante au décalage temporel [E. C. Smith, 2006] et qui prend en compte les phénomènes de masquage tels qu’ils sont observés en audition. Un code d’authentification est inséré à l’intérieur des coefficients de la représentation en spikegramme. Puis ceux-ci sont combinés aux seuils de masquage. Le signal tatoué est resynthétisé à partir des coefficients modifiés, et le signal ainsi obtenu est transmis au décodeur. Au décodeur, pour identifier un segment falsifié du signal sonore, les codes d’authentification de tous les segments intacts sont analysés. Si les codes ne peuvent être détectés correctement, on sait qu’alors le segment aura été falsifié. Nous proposons de tatouer selon le principe à spectre étendu (appelé MSS) afin d’obtenir une grande capacité en nombre de bits de tatouage introduits. Dans les situations où il y a désynchronisation entre le codeur et le décodeur, notre méthode permet quand même de détecter des pièces falsifiées. Par rapport à l’état de l’art, notre approche a le taux d’erreur le plus bas pour ce qui est de détecter les pièces falsifiées. Nous avons utilisé le test de l’opinion moyenne (‘MOS’) pour mesurer la qualité des systèmes tatoués. Nous évaluons la méthode de tatouage semi-fragile par le taux d’erreur (nombre de bits erronés divisé par tous les bits soumis) suite à plusieurs attaques. Les résultats confirment la supériorité de notre approche pour la localisation des pièces falsifiées dans les signaux sonores tout en préservant la qualité des signaux. Ensuite nous proposons une nouvelle technique pour la protection des signaux sonores. Cette technique est basée sur la représentation par spikegrammes des signaux sonores et utilise deux dictionnaires (TDA pour Two-Dictionary Approach). Le spikegramme est utilisé pour coder le signal hôte en utilisant un dictionnaire de filtres gammatones. Pour le tatouage, nous utilisons deux dictionnaires différents qui sont sélectionnés en fonction du bit d’entrée à tatouer et du contenu du signal. Notre approche trouve les gammatones appropriés (appelés noyaux de tatouage) sur la base de la valeur du bit à tatouer, et incorpore les bits de tatouage dans la phase des gammatones du tatouage. De plus, il est montré que la TDA est libre d’erreur dans le cas d’aucune situation d’attaque. Il est démontré que la décorrélation des noyaux de tatouage permet la conception d’une méthode de tatouage sonore très robuste. Les expériences ont montré la meilleure robustesse pour la méthode proposée lorsque le signal tatoué est corrompu par une compression MP3 à 32 kbits par seconde avec une charge utile de 56.5 bps par rapport à plusieurs techniques récentes. De plus nous avons étudié la robustesse du tatouage lorsque les nouveaux codec USAC (Unified Audion and Speech Coding) à 24kbps sont utilisés. La charge utile est alors comprise entre 5 et 15 bps. Finalement, nous utilisons les spikegrammes pour proposer trois nouvelles méthodes d’attaques. Nous les comparons aux méthodes récentes d’attaques telles que 32 kbps MP3 et 24 kbps USAC. Ces attaques comprennent l’attaque par PMP, l’attaque par bruit inaudible et l’attaque de remplacement parcimonieuse. Dans le cas de l’attaque par PMP, le signal de tatouage est représenté et resynthétisé avec un spikegramme. Dans le cas de l’attaque par bruit inaudible, celui-ci est généré et ajouté aux coefficients du spikegramme. Dans le cas de l’attaque de remplacement parcimonieuse, dans chaque segment du signal, les caractéristiques spectro-temporelles du signal (les décharges temporelles ;‘time spikes’) se trouvent en utilisant le spikegramme et les spikes temporelles et similaires sont remplacés par une autre. Pour comparer l’efficacité des attaques proposées, nous les comparons au décodeur du tatouage à spectre étendu. Il est démontré que l’attaque par remplacement parcimonieux réduit la corrélation normalisée du décodeur de spectre étendu avec un plus grand facteur par rapport à la situation où le décodeur de spectre étendu est attaqué par la transformation MP3 (32 kbps) et 24 kbps USAC.

Performance Analysis of Topological Quantum Error Correcting Codes

In the last few years there has been a great development of techniques like quantum computers and quantum communication systems, due to their huge potentialities and the growing number of applications. However, physical qubits experience a lot of nonidealities, like measurement errors and decoherence, that generate failures in the quantum computation. This work shows how it is possible to exploit concepts from classical information in order to realize quantum error-correcting codes, adding some redundancy qubits. In particular, the threshold theorem states that it is possible to lower the percentage of failures in the decoding at will, if the physical error rate is below a given accuracy threshold. The focus will be on codes belonging to the family of the topological codes, like toric, planar and XZZX surface codes. Firstly, they will be compared from a theoretical point of view, in order to show their advantages and disadvantages. The algorithms behind the minimum perfect matching decoder, the most popular for such codes, will be presented. The last section will be dedicated to the analysis of the performances of these topological codes with different error channel models, showing interesting results. In particular, while the error correction capability of surface codes decreases in presence of biased errors, XZZX codes own some intrinsic symmetries that allow them to improve their performances if one kind of error occurs more frequently than the others.

Selection bias in gene extraction on the basis of microarray gene-expression data

In the context of cancer diagnosis and treatment, we consider the problem of constructing an accurate prediction rule on the basis of a relatively small number of tumor tissue samples of known type containing the expression data on very many (possibly thousands) genes. Recently, results have been presented in the literature suggesting that it is possible to construct a prediction rule from only a few genes such that it has a negligible prediction error rate. However, in these results the test error or the leave-one-out cross-validated error is calculated without allowance for the selection bias. There is no allowance because the rule is either tested on tissue samples that were used in the first instance to select the genes being used in the rule or because the cross-validation of the rule is not external to the selection process; that is, gene selection is not performed in training the rule at each stage of the cross-validation process. We describe how in practice the selection bias can be assessed and corrected for by either performing a cross-validation or applying the bootstrap external to the selection process. We recommend using 10-fold rather than leave-one-out cross-validation, and concerning the bootstrap, we suggest using the so-called. 632+ bootstrap error estimate designed to handle overfitted prediction rules. Using two published data sets, we demonstrate that when correction is made for the selection bias, the cross-validated error is no longer zero for a subset of only a few genes.

Molecular orbital calculations of two-electron states for P-donor solid-state spin qubits

We theoretically study the Hilbert space structure of two neighboring P-donor electrons in silicon-based quantum computer architectures. To use electron spins as qubits, a crucial condition is the isolation of the electron spins from their environment, including the electronic orbital degrees of freedom. We provide detailed electronic structure calculations of both the single donor electron wave function and the two-electron pair wave function. We adopted a molecular orbital method for the two-electron problem, forming a basis with the calculated single donor electron orbitals. Our two-electron basis contains many singlet and triplet orbital excited states, in addition to the two simple ground state singlet and triplet orbitals usually used in the Heitler-London approximation to describe the two-electron donor pair wave function. We determined the excitation spectrum of the two-donor system, and study its dependence on strain, lattice position, and interdonor separation. This allows us to determine how isolated the ground state singlet and triplet orbitals are from the rest of the excited state Hilbert space. In addition to calculating the energy spectrum, we are also able to evaluate the exchange coupling between the two donor electrons, and the double occupancy probability that both electrons will reside on the same P donor. These two quantities are very important for logical operations in solid-state quantum computing devices, as a large exchange coupling achieves faster gating times, while the magnitude of the double occupancy probability can affect the error rate.

Coupling between replication and packaging of flavivirus RNA: Evidence derived from the use of DNA-based full-length cDNA clones of kunjin virus

In order to study whether flavivirus RNA packaging is dependent on RNA replication, we generated two DNA-based Kunjin virus constructs, pKUN1 and pKUN1dGDD, allowing continuous production of replicating (wild-type) and nonreplicating (with a deletion of the NS5 gene RNA-polymerase motif GDD) full-length Kunjin virus RNAs, respectively, via nuclear transcription by cellular RNA polymerase II. As expected, transfection of pKUN1 plasmid DNA into BHK cells resulted in the recovery of secreted infectious Kunjin virions. Transfection of pKUN1dGDD DNA into BHK cells, however, did not result in the recovery of any secreted virus particles containing encapsidated dGDD RNA, despite an apparent accumulation of this RNA in cells demonstrated by Northern blot analysis and its efficient translation demonstrated by detection of correctly processed labeled structural proteins (at least prM and E) both in cells and in the culture fluid using coimmunoprecipitation analysis with anti-E antibodies. In contrast, when dGDD RNA was produced even in much smaller amounts in PKUN1dGDD DNA-transfected repBHK cells (where it was replicated via complementation), it was packaged into secreted virus particles, Thus, packaging of defective Kunjin virus RNA could occur only when it was replicated. Our results with genome-length Kunjin virus RNA and the results with poliovirus replicon RNA (C, I. Nugent et al,, J, Virol, 73:427-435, 1999), both demonstrating the necessity for the RNA to be replicated before it can be packaged, strongly suggest the existence of a common mechanism for minimizing amplification and transmission of defective RNAs among the quasispecies in positive-strand RNA viruses, This mechanism may thus help alleviate the high-copy error rate of RNA-dependent RNA polymerases.